@article{Tai_Zhu_Liu_Yang_Wang_Wang_Jiang_Chen_Xu_Li_2017, title={Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition}, volume={10}, url={https://nmlett.org/index.php/nml/article/view/299}, DOI={10.1007/s40820-017-0173-1}, abstractNote={<p>The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient-pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates.</p> <p>Highlights:</p> <p>1 Graphene was successfully grown on single-crystal silicon substrates using metal-free, ambient-pressure chemical vapor deposition.<br>2 Atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains can be produced by controlling the growth temperature.<br>3 In-plane propagation, edge-propagation, and core-propagation processes are proposed to evaluate the sequentially changing graphene domains.</p>}, number={2}, journal={Nano-Micro Letters}, author={Tai, Lixuan and Zhu, Daming and Liu, Xing and Yang, Tieying and Wang, Lei and Wang, Rui and Jiang, Sheng and Chen, Zhenhua and Xu, Zhongmin and Li, Xiaolong}, year={2017}, month={Dec.}, pages={20} }