TY - JOUR AU - Tai, Lixuan AU - Zhu, Daming AU - Liu, Xing AU - Yang, Tieying AU - Wang, Lei AU - Wang, Rui AU - Jiang, Sheng AU - Chen, Zhenhua AU - Xu, Zhongmin AU - Li, Xiaolong PY - 2017/12/08 Y2 - 2024/03/29 TI - Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition JF - Nano-Micro Letters JA - Nano-Micro Lett VL - 10 IS - 2 SE - Articles DO - 10.1007/s40820-017-0173-1 UR - https://nmlett.org/index.php/nml/article/view/299 SP - 20 AB - <p>The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient-pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates.</p><p>Highlights:</p><p>1 Graphene was successfully grown on single-crystal silicon substrates using metal-free, ambient-pressure chemical vapor deposition.<br>2 Atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains can be produced by controlling the growth temperature.<br>3 In-plane propagation, edge-propagation, and core-propagation processes are proposed to evaluate the sequentially changing graphene domains.</p> ER -