Recent Progress in Ferroelectric Diodes: Explorations in Switchable Diode Effect
Corresponding Author: Kui-juan Jin
Nano-Micro Letters,
Vol. 5 No. 2 (2013), Article Number: 81-87
Abstract
Switchable diode effect in ferroelectric diodes has attracted much attention for its potential applications in novel nonvolatile memories. We briefly review recent investigations on the switchable diode effect in ferroelectric diodes both experimentally and theoretically. Many recent studies demonstrate that the interfacial barrier between the metal-ferroelectrics could be modulated by the polarization charges, and the ferroelectric polarization that can be reversed by an external electric field plays a dominant role in the switchable diode effect. Moreover, we review a self-consistent numerical model, which can well describe the switchable diode effect in ferroelectric diodes. Based on this model, it can be predicted that it is a better choice to select metals with a smaller permittivity, such as noble metals, to obtain a more pronounced switchable diode effect in ferroelectric diodes.
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- J. F. Scott, “Ferroelectric memories”, Springer, Heidelberg, Germany (2000).
- M. Dawber, K. M. Rabe and J. F. Scott, “Physics of thin-film ferroelectric oxides”, Rev. Mod. Phys. 77(4), 1083–1130 (2005). http://dx.doi.org/10.1103/RevModPhys.77.1083
- J. F. Scott and C. A. Araujo, “Ferroelectric memories”, Science 246(4936), 1400–1405 (1989). http://dx.doi.org/10.1126/science.246.4936.1400
- O. Auciello, J. F. Scott and R. Ramesh, “The physics of ferroelectric memories”, Phys. Today 51(7), 22–27 (1998). http://dx.doi.org/10.1063/1.882324
- P. Zubko and J.-M. Triscone, “Applied physics: a leak of information”, Nature 460, 45–46 (2009). http://dx.doi.org/10.1038/460045a
- R. Meyer and R. Waser, “Hysteretic resistance concepts in ferroelectric thin films”, J. Appl. Phys. 100(5), 051611–051618 (2006). http://dx.doi.org/10.1063/1.2337078
- B. C. Huang, Y. T. Chen, Y. P. Chiu, Y. C. Huang, J. C. Yang, Y. C. Chen and Y. H. Chu, “Direct observation of ferroelectric polarization-modulated band bending at oxide interfaces” Appl. Phys. Lett. 100(12), 122903–122906 (2012). http://dx.doi.org/10.1063/1.3691615
- L. Pintilie, V. Stancu, L. Trupina and I. Pintilie, “Ferroelectric schottky diode behavior from a SrRuO3-Pb(Zr0.2Ti0.8)O3-Ta structure”, Phys. Rev. B 82(8), 085319–085326 (2010). http://dx.doi.org/10.1103/PhysRevB.82.085319
- E. Y. Tsymbal and H. Kohlstedt, “Applied physicstunneling across a ferroelectric” Science 313(5784), 181–183 (2006). http://dx.doi.org/10.1126/science.1126230
- M. Y. Zhuravlev, R. F. Sabirianov, S. S. Jaswal and E. Y. Tsymbal, “Giant electroresistance in ferroelectric tunnel junctions”, Phys. Rev. Lett. 94(24), 246802–246805 (2005). http://dx.doi.org/10.1103/PhysRevLett.94.246802
- V. Garcia, S. Fusil, K. Bouzehouane, S. Enouz-Vedrenne, N. D. Mathur, A. Barthélémy and M. Bibes, “Giant tunnel electroresistance for non-destructive readout of ferroelectric states”, Nature 460(7251), 81–84 (2009). http://dx.doi.org/10.1038/nature08128
- P. Maksymovych, S. Jesse, P. Yu, R. Ramesh, A. P. Baddorf and S. V. Kalinin, “Polarization control of electron tunneling into ferroelectric surfaces”, Science 324(5933), 1421–1425 (2009). http://dx.doi.org/10.1126/science.1171200
- V. Garcia, M. Bibesl, L. Bocher, S. Valencia, F. Kronast, A. Crassous, X. Moya, S. Enouz-Vedrenne, A. Gloter, D. Imhoff, C. Deranlot, N. D. Mathur, S. Fusil, K. Bouzehouane and A. Barthélémy, “Ferroelectric control of spin polarization”, Science 327(5969), 1106–1110 (2010). http://dx.doi.org/10.1126/science.1184028
- P. W. M. Blom, R. M. Wolf, J. F. M. Cillessen and M. P. C. M. Krijn, “Ferroelectric schottky diode”, Phys. Rev. Lett. 73(15), 2107–2110 (1994). http://dx.doi.org/10.1103/PhysRevLett.73.2107
- Y. Watanabe, “Reproducible memory effect in the leakage current of epitaxial ferroelectric/conductive perovskite heterostructures”, Appl. Phys. Lett. 66(1), 28–30 (1995). http://dx.doi.org/10.1063/1.114170
- P. V. D. Sluis, “Non-volatile memory cells based on ZnxCd1-xS ferroelectric schottky diodes”, Appl. Phys. Lett. 82(23), 4089–4091 (2003). http://dx.doi.org/10.1063/1.1581365
- G. Z. Liu, K. J. Jin, J. Qiu, M. He, H. B. Lu, J. Xing, Y. L. Zhou and G. Z. Yang, “Resistance switching in BaTiO3-d/Si p - n heterostructure”, Appl. Phys. Lett. 91(25), 252110–252113 (2007). http://dx.doi.org/10.1063/1.2821369
- S. Y. Yang, L. W. Martin, S. J. Byrnes, T. E. Conry, S. R. Basu, D. Paran, L. Reichertz, J. Ihlefeld, C. Adamo, A. Melville, Y.-H. Chu, C.-H. Yang, J. L. Musfeldt, D. G. Schlom, J. W. Ager and R. Ramesh, “Photovoltaic effects in BiFeO3”, Appl. Phys. Lett. 95(6), 062909–062911 (2009). http://dx.doi.org/10.1063/1.3204695
- Y. Shuai, S. Q. Zhou, C. G. Wu, W. L. Zhang, D. Bürger, S. Slesazeck, T. Mikolajick, M. Helm and H. Schmidt, “Memristor behaviors of highly oriented anatase TiO2 film sandwiched between top Pt and bottom SrRuO3 electrodes”, Appl. Phys. Express 4(4), 041101–041103 (2011). http://dx.doi.org/10.1143/APEX.4.041101
- K. Asadi, D. M. D. Leeuw, B. D. Boer and P. W. M. Blom, “Organic non-volatile memories from ferroelectric phase-separated blends”, Nature Mater. 7(7), 547–550 (2008). http://dx.doi.org/10.1038/nmat2207
- K. Asadi, T. G. de Boer, P. W. M. Blom and D. M. de Leeuw, “Tunable injection barrier in organic resistive switches based on phaseseparated ferroelectric-semiconductor blends”, Adv. Funct. Mater. 19(19), 3173–3178 (2009). http://dx.doi.org/10.1002/adfm.200900383
- T. Choi, S. Lee, Y. J. Choi, V. Kiryukhin and S.-W. Cheong, “Switchable ferroelectric diode and photovoltaic effect in BiFeO3”, Science 324(5923), 63–66 (2009). http://dx.doi.org/10.1126/science.1168636
- W. D. Wu, J. R. Guest, Y. Horibe, S. Park, T. Choi, S. W. Cheong and M. Bode, “Polarization-modulated rectification at ferroelectric surfaces”, Phys. Rev. Lett. 104(21), 217601–217604 (2010). http://dx.doi.org/10.1103/PhysRevLett.104.217601
- C. J. Won, Y. A. Park, K. D. Lee, H. Y. Ryu and N. Hur, “Diode and photocurrent effect in ferroelectric BaTiO3-d”, J. Appl. Phys. 109(8), 084108–084111 (2011). http://dx.doi.org/10.1063/1.3569619
- C. H. Yang, J. Seidel, S. Y. Kim, P. B. Rossen, P. Yu, M. Gajek, Y. H. Chu, L. W. Martin, M. B. Holcomb, Q. He, P. Maksymovych, N. Balke, S. V. Kalinin, A. P. Baddorf, S. R. Basu, M. L. Scullin and R. Ramesh, “Electric modulation of conduction in multiferroic Cadoped BiFeO3 films”, Nature Mater. 8(6), 485–493 (2009). http://dx.doi.org/10.1038/nmat2432
- Q. Jiang, C. Wang, K. J. Jin, X. B. Liu, J. F. Scott, C. S. Hwang, T. A. Tang, H. B. Lu and G. Z. Yang, “A resistive memory in semiconducting BiFeO3 thin-film capacitors”, Adv. Mater. 23(10), 1277–1281 (2011). http://dx.doi.org/10.1002/adma.201004317
- Wang, K. J. Jin, Z. T. Xu, L. Wang, C. Ge, H. B. Lu, H. Z. Guo, M. He and G. Z. Yang, “Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films”, Appl. Phys. Lett. 98(19), 192901–192903 (2011). http://dx.doi.org/10.1063/1.3589814
- Lee, S. H. Baek, T. H. Kim, J. G. Yoon, C. M. Folkman, C. B. Eom and T. W. Noh, “Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects”, Phys. Rev. B 84(12), 125305–125313 (2011). http://dx.doi.org/10.1103/PhysRevB.84.125305
- S. Hong, T. Choi, J. H. Jeon, Y. Kim, H. Lee, H. Y. Joo, I. Hwang, J. S. Kim, S. O. Kang, S. V. Kalinin and B. H. Park, “Large resistive switching in ferroelectric BiFeO3 nano-island based switchable diodes”, Adv. Mater. 25(16), 2339–2343 (2013). http://dx.doi.org/10.1002/adma.201204839
- C. Ge, K. J. Jin, C. Wang, H. B. Lu, C. Wang and G. Z. Yang, “Numerical investigation into the switchable diode effect in metal-ferroelectric-metal structures”, Appl. Phys. Lett. 99(6), 063509–063511 (2011). http://dx.doi.org/10.1063/1.3624849
- C. Ge, K. J. Jin, C. Wang, H. B. Lu, C. Wang and G. Z. Yang, “Effect of ferroelectric parameters on ferroelectric diodes”, J. Appl. Phys. 111(5), 054104–054108 (2012). http://dx.doi.org/10.1063/1.3692769
- G. L. Yuan and J. L. Wang, “Evidences for the depletion region induced by the polarization of ferroelectric semiconductors”, Appl. Phys. Lett. 95(25), 252904–252906 (2009). http://dx.doi.org/10.1063/1.3268783
- M. F. Chisholm, W. Luo, M. P. Oxley, S. T. Pantelides and H. N. Lee, “Atomic-scale compensation phenomena at polar interfaces”, Phys. Rev. Lett. 105(19), 197602–197605 (2010). http://dx.doi.org/10.1103/PhysRevLett.105.197602
- R. R. Mehta, B. D. Silverman and J. T. Jacobs, “Depolarization fields in thin ferroelectric films”, J. Appl. Phys. 44(8), 3379–3385 (1973). http://dx.doi.org/10.1063/1.1662770
- C. T. Black and J. J. Welser, “Electric-field penetration into metals: consequences for high-dielectricconstant capacitors”, IEEE Trans. Electron Devices 46(4), 776–780 (1999). http://dx.doi.org/10.1109/16.753713
- F. Neumann, Y. A. Genenko, C. Melzer and H. von Seggern, “Self-consistent theory of unipolar chargecarrier injection in metal/insulator/metal systems”, J. Appl. Phys. 100(8), 084511–084518 (2006). http://dx.doi.org/10.1063/1.2360383
- F. Neumann, Y. A. Genenko, C. Melzer, S. V. Yampolskii and H. von Seggern, “Self-consistent analytical solution of a problem of charge-carrier injection at a conductor/insulator interface”, Phys. Rev. B 75(20), 205322–205331 (2007). http://dx.doi.org/10.1103/PhysRevB.75.205322
- D. Schroeder, “Modelling of interface carrier transport for device simulation”, Springer-Verlag, Berlin, Germany (1994). http://dx.doi.org/10.1007/978-3-7091-6644-4
- S. Y. Yang, J. Seidel, S. J. Byrnes, P. Shafer, C. H. Yang, M. D. Rossell, P. Yu, Y. H. Chu, J. F. Scott, J. W. Ager, L. W. Martin and R. Ramesh, “Abovebandgap voltages from ferroelectric photovoltaic devices”, Natue Nanotech. 5(2), 143–147 (2010). http://dx.doi.org/10.1038/nnano.2009.451
- W. Ji, K. Yao and Y. C. Liang, “Bulk photovoltaic effect at visible wavelength in epitaxial ferroelectric BiFeO3 thin films”, Adv. Mater. 22(15), 1763–1766 (2010). http://dx.doi.org/10.1002/adma.200902985
- L. Wang, Y. L. Jin, K. J. Jin, C. Wang, H. B. Lu, C. Wang, C. Ge, X. Y. Chen, E. J. Guo and G. Z. Yang, “Photo-resistance and photo-voltage in epitaxial BiFeO3 thin films”, Europhys. Lett. 96(1), 17008 (2011). http://dx.doi.org/10.1209/0295-5075/96/17008
- N. A. Spaldin, S. W. Cheong and R. Ramesh, “Multiferroics: past, present, and future”, Phys. Today 63(10), 38–43 (2010). http://dx.doi.org/10.1063/1.3502547
- G. Catalan and J. F. Scott, “Physics and applications of bismuth ferrite”, Adv. Mater. 21(24), 2463–2485 (2009). http://dx.doi.org/10.1002/adma.200802849
- J. Ma, J. M. Hu, Z. Li and C. W. Nan, “Recent progress in multiferroic magnetoelectric composites: from bulk to thin films”, Adv. Mater. 23(9), 1062–1087 (2011). http://dx.doi.org/10.1002/adma.201003636
References
J. F. Scott, “Ferroelectric memories”, Springer, Heidelberg, Germany (2000).
M. Dawber, K. M. Rabe and J. F. Scott, “Physics of thin-film ferroelectric oxides”, Rev. Mod. Phys. 77(4), 1083–1130 (2005). http://dx.doi.org/10.1103/RevModPhys.77.1083
J. F. Scott and C. A. Araujo, “Ferroelectric memories”, Science 246(4936), 1400–1405 (1989). http://dx.doi.org/10.1126/science.246.4936.1400
O. Auciello, J. F. Scott and R. Ramesh, “The physics of ferroelectric memories”, Phys. Today 51(7), 22–27 (1998). http://dx.doi.org/10.1063/1.882324
P. Zubko and J.-M. Triscone, “Applied physics: a leak of information”, Nature 460, 45–46 (2009). http://dx.doi.org/10.1038/460045a
R. Meyer and R. Waser, “Hysteretic resistance concepts in ferroelectric thin films”, J. Appl. Phys. 100(5), 051611–051618 (2006). http://dx.doi.org/10.1063/1.2337078
B. C. Huang, Y. T. Chen, Y. P. Chiu, Y. C. Huang, J. C. Yang, Y. C. Chen and Y. H. Chu, “Direct observation of ferroelectric polarization-modulated band bending at oxide interfaces” Appl. Phys. Lett. 100(12), 122903–122906 (2012). http://dx.doi.org/10.1063/1.3691615
L. Pintilie, V. Stancu, L. Trupina and I. Pintilie, “Ferroelectric schottky diode behavior from a SrRuO3-Pb(Zr0.2Ti0.8)O3-Ta structure”, Phys. Rev. B 82(8), 085319–085326 (2010). http://dx.doi.org/10.1103/PhysRevB.82.085319
E. Y. Tsymbal and H. Kohlstedt, “Applied physicstunneling across a ferroelectric” Science 313(5784), 181–183 (2006). http://dx.doi.org/10.1126/science.1126230
M. Y. Zhuravlev, R. F. Sabirianov, S. S. Jaswal and E. Y. Tsymbal, “Giant electroresistance in ferroelectric tunnel junctions”, Phys. Rev. Lett. 94(24), 246802–246805 (2005). http://dx.doi.org/10.1103/PhysRevLett.94.246802
V. Garcia, S. Fusil, K. Bouzehouane, S. Enouz-Vedrenne, N. D. Mathur, A. Barthélémy and M. Bibes, “Giant tunnel electroresistance for non-destructive readout of ferroelectric states”, Nature 460(7251), 81–84 (2009). http://dx.doi.org/10.1038/nature08128
P. Maksymovych, S. Jesse, P. Yu, R. Ramesh, A. P. Baddorf and S. V. Kalinin, “Polarization control of electron tunneling into ferroelectric surfaces”, Science 324(5933), 1421–1425 (2009). http://dx.doi.org/10.1126/science.1171200
V. Garcia, M. Bibesl, L. Bocher, S. Valencia, F. Kronast, A. Crassous, X. Moya, S. Enouz-Vedrenne, A. Gloter, D. Imhoff, C. Deranlot, N. D. Mathur, S. Fusil, K. Bouzehouane and A. Barthélémy, “Ferroelectric control of spin polarization”, Science 327(5969), 1106–1110 (2010). http://dx.doi.org/10.1126/science.1184028
P. W. M. Blom, R. M. Wolf, J. F. M. Cillessen and M. P. C. M. Krijn, “Ferroelectric schottky diode”, Phys. Rev. Lett. 73(15), 2107–2110 (1994). http://dx.doi.org/10.1103/PhysRevLett.73.2107
Y. Watanabe, “Reproducible memory effect in the leakage current of epitaxial ferroelectric/conductive perovskite heterostructures”, Appl. Phys. Lett. 66(1), 28–30 (1995). http://dx.doi.org/10.1063/1.114170
P. V. D. Sluis, “Non-volatile memory cells based on ZnxCd1-xS ferroelectric schottky diodes”, Appl. Phys. Lett. 82(23), 4089–4091 (2003). http://dx.doi.org/10.1063/1.1581365
G. Z. Liu, K. J. Jin, J. Qiu, M. He, H. B. Lu, J. Xing, Y. L. Zhou and G. Z. Yang, “Resistance switching in BaTiO3-d/Si p - n heterostructure”, Appl. Phys. Lett. 91(25), 252110–252113 (2007). http://dx.doi.org/10.1063/1.2821369
S. Y. Yang, L. W. Martin, S. J. Byrnes, T. E. Conry, S. R. Basu, D. Paran, L. Reichertz, J. Ihlefeld, C. Adamo, A. Melville, Y.-H. Chu, C.-H. Yang, J. L. Musfeldt, D. G. Schlom, J. W. Ager and R. Ramesh, “Photovoltaic effects in BiFeO3”, Appl. Phys. Lett. 95(6), 062909–062911 (2009). http://dx.doi.org/10.1063/1.3204695
Y. Shuai, S. Q. Zhou, C. G. Wu, W. L. Zhang, D. Bürger, S. Slesazeck, T. Mikolajick, M. Helm and H. Schmidt, “Memristor behaviors of highly oriented anatase TiO2 film sandwiched between top Pt and bottom SrRuO3 electrodes”, Appl. Phys. Express 4(4), 041101–041103 (2011). http://dx.doi.org/10.1143/APEX.4.041101
K. Asadi, D. M. D. Leeuw, B. D. Boer and P. W. M. Blom, “Organic non-volatile memories from ferroelectric phase-separated blends”, Nature Mater. 7(7), 547–550 (2008). http://dx.doi.org/10.1038/nmat2207
K. Asadi, T. G. de Boer, P. W. M. Blom and D. M. de Leeuw, “Tunable injection barrier in organic resistive switches based on phaseseparated ferroelectric-semiconductor blends”, Adv. Funct. Mater. 19(19), 3173–3178 (2009). http://dx.doi.org/10.1002/adfm.200900383
T. Choi, S. Lee, Y. J. Choi, V. Kiryukhin and S.-W. Cheong, “Switchable ferroelectric diode and photovoltaic effect in BiFeO3”, Science 324(5923), 63–66 (2009). http://dx.doi.org/10.1126/science.1168636
W. D. Wu, J. R. Guest, Y. Horibe, S. Park, T. Choi, S. W. Cheong and M. Bode, “Polarization-modulated rectification at ferroelectric surfaces”, Phys. Rev. Lett. 104(21), 217601–217604 (2010). http://dx.doi.org/10.1103/PhysRevLett.104.217601
C. J. Won, Y. A. Park, K. D. Lee, H. Y. Ryu and N. Hur, “Diode and photocurrent effect in ferroelectric BaTiO3-d”, J. Appl. Phys. 109(8), 084108–084111 (2011). http://dx.doi.org/10.1063/1.3569619
C. H. Yang, J. Seidel, S. Y. Kim, P. B. Rossen, P. Yu, M. Gajek, Y. H. Chu, L. W. Martin, M. B. Holcomb, Q. He, P. Maksymovych, N. Balke, S. V. Kalinin, A. P. Baddorf, S. R. Basu, M. L. Scullin and R. Ramesh, “Electric modulation of conduction in multiferroic Cadoped BiFeO3 films”, Nature Mater. 8(6), 485–493 (2009). http://dx.doi.org/10.1038/nmat2432
Q. Jiang, C. Wang, K. J. Jin, X. B. Liu, J. F. Scott, C. S. Hwang, T. A. Tang, H. B. Lu and G. Z. Yang, “A resistive memory in semiconducting BiFeO3 thin-film capacitors”, Adv. Mater. 23(10), 1277–1281 (2011). http://dx.doi.org/10.1002/adma.201004317
Wang, K. J. Jin, Z. T. Xu, L. Wang, C. Ge, H. B. Lu, H. Z. Guo, M. He and G. Z. Yang, “Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films”, Appl. Phys. Lett. 98(19), 192901–192903 (2011). http://dx.doi.org/10.1063/1.3589814
Lee, S. H. Baek, T. H. Kim, J. G. Yoon, C. M. Folkman, C. B. Eom and T. W. Noh, “Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects”, Phys. Rev. B 84(12), 125305–125313 (2011). http://dx.doi.org/10.1103/PhysRevB.84.125305
S. Hong, T. Choi, J. H. Jeon, Y. Kim, H. Lee, H. Y. Joo, I. Hwang, J. S. Kim, S. O. Kang, S. V. Kalinin and B. H. Park, “Large resistive switching in ferroelectric BiFeO3 nano-island based switchable diodes”, Adv. Mater. 25(16), 2339–2343 (2013). http://dx.doi.org/10.1002/adma.201204839
C. Ge, K. J. Jin, C. Wang, H. B. Lu, C. Wang and G. Z. Yang, “Numerical investigation into the switchable diode effect in metal-ferroelectric-metal structures”, Appl. Phys. Lett. 99(6), 063509–063511 (2011). http://dx.doi.org/10.1063/1.3624849
C. Ge, K. J. Jin, C. Wang, H. B. Lu, C. Wang and G. Z. Yang, “Effect of ferroelectric parameters on ferroelectric diodes”, J. Appl. Phys. 111(5), 054104–054108 (2012). http://dx.doi.org/10.1063/1.3692769
G. L. Yuan and J. L. Wang, “Evidences for the depletion region induced by the polarization of ferroelectric semiconductors”, Appl. Phys. Lett. 95(25), 252904–252906 (2009). http://dx.doi.org/10.1063/1.3268783
M. F. Chisholm, W. Luo, M. P. Oxley, S. T. Pantelides and H. N. Lee, “Atomic-scale compensation phenomena at polar interfaces”, Phys. Rev. Lett. 105(19), 197602–197605 (2010). http://dx.doi.org/10.1103/PhysRevLett.105.197602
R. R. Mehta, B. D. Silverman and J. T. Jacobs, “Depolarization fields in thin ferroelectric films”, J. Appl. Phys. 44(8), 3379–3385 (1973). http://dx.doi.org/10.1063/1.1662770
C. T. Black and J. J. Welser, “Electric-field penetration into metals: consequences for high-dielectricconstant capacitors”, IEEE Trans. Electron Devices 46(4), 776–780 (1999). http://dx.doi.org/10.1109/16.753713
F. Neumann, Y. A. Genenko, C. Melzer and H. von Seggern, “Self-consistent theory of unipolar chargecarrier injection in metal/insulator/metal systems”, J. Appl. Phys. 100(8), 084511–084518 (2006). http://dx.doi.org/10.1063/1.2360383
F. Neumann, Y. A. Genenko, C. Melzer, S. V. Yampolskii and H. von Seggern, “Self-consistent analytical solution of a problem of charge-carrier injection at a conductor/insulator interface”, Phys. Rev. B 75(20), 205322–205331 (2007). http://dx.doi.org/10.1103/PhysRevB.75.205322
D. Schroeder, “Modelling of interface carrier transport for device simulation”, Springer-Verlag, Berlin, Germany (1994). http://dx.doi.org/10.1007/978-3-7091-6644-4
S. Y. Yang, J. Seidel, S. J. Byrnes, P. Shafer, C. H. Yang, M. D. Rossell, P. Yu, Y. H. Chu, J. F. Scott, J. W. Ager, L. W. Martin and R. Ramesh, “Abovebandgap voltages from ferroelectric photovoltaic devices”, Natue Nanotech. 5(2), 143–147 (2010). http://dx.doi.org/10.1038/nnano.2009.451
W. Ji, K. Yao and Y. C. Liang, “Bulk photovoltaic effect at visible wavelength in epitaxial ferroelectric BiFeO3 thin films”, Adv. Mater. 22(15), 1763–1766 (2010). http://dx.doi.org/10.1002/adma.200902985
L. Wang, Y. L. Jin, K. J. Jin, C. Wang, H. B. Lu, C. Wang, C. Ge, X. Y. Chen, E. J. Guo and G. Z. Yang, “Photo-resistance and photo-voltage in epitaxial BiFeO3 thin films”, Europhys. Lett. 96(1), 17008 (2011). http://dx.doi.org/10.1209/0295-5075/96/17008
N. A. Spaldin, S. W. Cheong and R. Ramesh, “Multiferroics: past, present, and future”, Phys. Today 63(10), 38–43 (2010). http://dx.doi.org/10.1063/1.3502547
G. Catalan and J. F. Scott, “Physics and applications of bismuth ferrite”, Adv. Mater. 21(24), 2463–2485 (2009). http://dx.doi.org/10.1002/adma.200802849
J. Ma, J. M. Hu, Z. Li and C. W. Nan, “Recent progress in multiferroic magnetoelectric composites: from bulk to thin films”, Adv. Mater. 23(9), 1062–1087 (2011). http://dx.doi.org/10.1002/adma.201003636