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Vol. 5 No. 2 (2013)

Thermal Evaporation Deposition of Few-layer MoS2 Films

https://doi.org/10.1007/BF03353741
Xiying Ma
School of Mathematics and Physics, Suzhou University of Science and Technology, 1# Kerui Road Gaoxin Section, Suzhou 215011, Jiangsu, China
Miaoyuan Shi
Electricity Engineer Department, University of Liverpool, L69 7ZX Liverpool, UK

Corresponding Author: Xiying Ma

maxy@mail.usts.edu.cn

Nano-Micro Letters, Vol. 5 No. 2 (2013), Article Number: 135-139

Abstract

We present a study of the fabrication of monolayer MoS2 on n-Si (111) substrates by modified thermal evaporation deposition and the optoelectrical properties of the resulting film. The as-grown MoS2 ultrathin film is about 10 nm thick, or about a few atomic layers of MoS2. The film has a large optical absorption range of 300–700 nm and strong luminescence emission at 682 nm. The optical absorption range covered almost the entire ultraviolet to visible light range, which is very useful for making high-efficiency solar cells. Moreover, the MoS2/Si heterojunction exhibited good rectification characteristics and excellent photovoltaic effects. The power conversion efficiency of the heterojunction device is about 1.79% under white light illumination of 10 mW/cm2. The results show that the monolayer MoS2 film will find many applications in high-efficiency optoelectronic devices.

Keywords

Monolayer MoS2 Thermal evaporation deposition Absorption spectrum I-V behavior
Ma, Xiying, and Miaoyuan Shi. 2013. “Thermal Evaporation Deposition of Few-Layer MoS2 Films”. Nano-Micro Letters 5 (2):135-39. https://doi.org/10.1007/BF03353741.
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