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Vol. 5 No. 2 (2013)

Thermal Evaporation Deposition of Few-layer MoS2 Films

https://doi.org/10.1007/BF03353741
Xiying Ma
School of Mathematics and Physics, Suzhou University of Science and Technology, 1# Kerui Road Gaoxin Section, Suzhou 215011, Jiangsu, China
Miaoyuan Shi
Electricity Engineer Department, University of Liverpool, L69 7ZX Liverpool, UK

Corresponding Author: Xiying Ma

maxy@mail.usts.edu.cn

Nano-Micro Letters, Vol. 5 No. 2 (2013), Article Number: 135-139

Abstract

We present a study of the fabrication of monolayer MoS2 on n-Si (111) substrates by modified thermal evaporation deposition and the optoelectrical properties of the resulting film. The as-grown MoS2 ultrathin film is about 10 nm thick, or about a few atomic layers of MoS2. The film has a large optical absorption range of 300–700 nm and strong luminescence emission at 682 nm. The optical absorption range covered almost the entire ultraviolet to visible light range, which is very useful for making high-efficiency solar cells. Moreover, the MoS2/Si heterojunction exhibited good rectification characteristics and excellent photovoltaic effects. The power conversion efficiency of the heterojunction device is about 1.79% under white light illumination of 10 mW/cm2. The results show that the monolayer MoS2 film will find many applications in high-efficiency optoelectronic devices.

Keywords

Monolayer MoS2 Thermal evaporation deposition Absorption spectrum I-V behavior
Ma, Xiying, and Miaoyuan Shi. 2013. “Thermal Evaporation Deposition of Few-Layer MoS2 Films”. Nano-Micro Letters 5 (2):135-39. https://doi.org/10.1007/BF03353741.
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References
  1. F. Schwierz, “Graphene transistors”, Nat. Nanotechnol. 5(7), 487–551 (2010). http://dx.doi.org/10.1038/nnano.2010.89
  2. Zhi Yang, Rungang Gao, Nantao Hu, Jing Chai, Yingwu Cheng, Liying Zhang, Hao Wei, Eric Siu-Wai Kong and Yafei Zhang, “The Prospective 2D Graphene Nanosheets: Preparation, Functionalization and Applications”, Nano-Micro Lett. 4 (1), 1–9 (2012). http://dx.doi.org/10.3786/nml.v4i1.p1-9
  3. A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli and F. Wang, “Emerging photoluminescence in monolayer MoS2”, Nano Lett. 10(4), 1271–1275 (2010). http://dx.doi.org/10.1021/nl903868w
  4. C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone and S. Ryu, “Anomalous lattice vibrations of single- and few-layer MoS2”, ACS Nano 4(5), 2695–2700 (2010). http://dx.doi.org/10.1021/nn1003937
  5. K. F. Mak, C. Lee, J. Hone, J. Shan and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor”, Phys. Rev. Lett. 105(13), 136805–08 (2010). http://dx.doi.org/10.1103/PhysRevLett.105.136805
  6. N. R. Pradhan, D. Rhodes, Q. Zhang, S. Talapatra, M. Terrones, P. M. Ajayan and L. Balicas, “Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2”, Appl. Phys. Lett. 102(12), 123105–08 (2013). http://dx.doi.org/10.1063/1.4799172
  7. A. C. Gomez, M. Poot, G. A. Steele, H. S. J. van der Zant, N. Agraït and G. R. Bollinger, “Elastic properties of freely suspended MoS2 nanosheets”, Adv. Mater. 24(6), 772–775 (2012). http://dx.doi.org/10.1002/adma.201103965
  8. W. Yu, Z. Li, H. Zhou, Y. Chen, Y. Wang, Y. Huang and X. Duan, “Vertically stacked multiheterostructures of layered materials for logic transistors and complementary inverters”, Nat. Mater. 12(3), 246–252 (2013). http://dx.doi.org/10.1038/nmat3518
  9. H. S. Lee, S. W. Min, Y. G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu and S. Im, “MoS2 nanosheet phototransistors with thickness-modulated optical energy gap”, Nano Lett. 12(7), 3695 (2012). http://dx.doi.org/10.1021/nl301485q
  10. M. Buscema, M. Barkelid, V. Zwiller, H. S. J. van der Zant, G. A. Steele and A. C. Gomez, “Large and tunable photothermoelectric effect in single-layer MoS2”, Nano Lett. 13(2), 358–363 (2013). http://dx.doi.org/10.1021/nl303321g
  11. H. Shin, J. Doerr, C. V. Deshpandey, B. Dunn and R. F. Bunshah, “Effect of deposition variables on the properties of molybdenum sulfide films prepared by the activated reactive evaporation technique”, Surf. Coat. Tech. 39/40(2), 683–690 (1989). http://dx.doi.org/10.1016/S0257-8972(89)80030-1
  12. J. J. Auborn, Y. L. Barberio, K. J. Hanson, D. M. Schleich and M. J. Martin, “Amorphous molybdenum sulfide electrodes for nonaqueous electrochemical cells”, J. Electrochem. Soc. 134(3), 580–586 (1987). http://dx.doi.org/10.1149/1.2100512
  13. P. Joensen, R. F. Frindt and S. R. Morrison, “Single-layer MoS2”, Mater. Res. Bull. 21(4), 457–461 (1986). http://dx.doi.org/10.1016/0025-5408(86)90011-5
  14. A. Schumacher, L. Scandella, N. Kruse and R. Prins, “Single-layer MoS2 on mica: studies by means of scanning force microscopy”, Surf. Sci. Lett. 289(1–2), L595–L598 (1993). http://dx.doi.org/10.1016/0167-2584(93)90727-Z
  15. Y. H. Lee, L. Yu, H. Wang, W. Fang, X. Ling, Y. Shi, C. T. Lin, J. K. Huang, M. T. Chang, C. S. Chang, M. Dresselhaus, T. Palacios, L. J. Li and J. Kong, “Synthesis and Transfer of Single-Layer Transition Metal Disulfides on Diverse Surfaces”, Nano Lett. 13(4), 1852–1857 (2013). http://dx.doi.org/10.1021/nl400687n
  16. A. Castellanos-Gomez, M. Barkelid, A. M. Goossens, V. E. Calado, H. S. J. van der Zant, and G. A. Steele, “Laser-thinning of MoS2: on demand generation of a single-layer semiconductor”, Nano Lett. 12(6), 3187–3192 (2012). http://dx.doi.org/10.1021/nl301164v
  17. W. K. Hoffman, “Thin films of molybdenum and tungsten disulphides by metal organic chemical vapour deposition”, J. Mater. Sci. 23(11), 3981–3986 (1988). http://dx.doi.org/10.1007/BF01106824
  18. K. K. Liu, W. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. Shi, H. Zhang, C. S. Lai and L. J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates”, Nano Lett. 12(3), 1538–1544 (2012). http://dx.doi.org/10.1021/nl2043612
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