Multiple stacking of InGaAs/GaAs (731) nanostructures

Y. Z. Xie; V. P. Kunets; Z. M. Wang; V. Dorogan; Y. I. Mazu; J. Wu; G. J. Salamo

doi:10.1007/BF03353596

Issue

Vol. 1 No. 1 (2009)

Issue Published : Sep 1, 2009

Multiple stacking of InGaAs/GaAs (731) nanostructures

https://doi.org/10.1007/BF03353596

Y. Z. Xie

Institute of Nanoscale Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA

V. P. Kunets

Institute of Nanoscale Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA

Z. M. Wang

Institute of Nanoscale Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA

V. Dorogan

Institute of Nanoscale Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA

Y. I. Mazu

Institute of Nanoscale Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA

J. Wu

Institute of Nanoscale Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA

G. J. Salamo

Institute of Nanoscale Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA

Corresponding Author: Z. M. Wang

zmwang@uark.edu

Nano-Micro Letters, Vol. 1 No. 1 (2009), Article Number: 1–3
Article Published : Oct 15, 2009

Abstract

We studied the multilayering effects of InGaAs quantum dots (QDs) on GaAs(731), a surface lying inside of the stereographic triangle. The surfaces after stacking 16 InGaAs layers were characterized with highly non-uniformity of QD spatial distribution. The bunched step regions driven by strain accumulation are decorated by QDs, therefore GaAs(731) becomes a good candidate substrate for the growth of QD clusters. The unique optical properties of the QD clusters are revealed by photoluminescence measurements. By adjusting the coverage of InGaAs, a bamboo-like nanostructured surface was observed and the quantum dots aligned up in clusters to separate the “bamboo” into sections.

Keywords

Quantum dot MBE High index surfaces Nanostructures Atomic force microscopy

Xie, Y. Z., V. P. Kunets, Z. M. Wang, V. Dorogan, Y. I. Mazu, J. Wu, and G. J. Salamo. 2009. “Multiple Stacking of InGaAs/GaAs (731) Nanostructures”. Nano-Micro Letters 1 (1):1–3. https://doi.org/10.1007/BF03353596.

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References

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References

S. Sanguinetti, S. Castiglioni, E. Grilli, M. Guzzi, G. Panzarini, L. C. Andreani and M. Henini, Jpn. J. Appl. Phys. 38, 4676 (1999). doi:10.1143/JJAP.38.4676

H. Wen, Z. M. Wang and G. J. Salamo, Appl. Phys. Lett. 84, 1756 (2004). doi:10.1063/1.1664018

Y. Temko, T. Suzuki, M. C. Xu and K. Jacobi, Surf. Sci. 591, 117 (2005). doi:10.1016/j.susc.2005.06.026

Y. Temko, T. Suzuki, M. C. Xu, K. Potschke, D. Bimberg and K. Jacobi, Phys. Rev. B 71, 045336 (2005).

M. Zervos, C. Xenogianni, G. Deligeorgis, M. Androulidaki, P. G. Savvidis, Z. Hatzopoulos and N. T. Pelekanos, Phys. Status Solidi C 3, 3988 (2006).

B. L. Liang, Zh. M. Wang, Yu. I. Mazur, Sh. Seydmohamadi, M. E. Ware and G. J. Salamo, Optics Express 15, 8157 (2007). doi:10.1364/OE.15.008157

C. Wang, Y. Yang, X.M. Chen, Z.L. Liu, H.Y. Cui, S. Zhang, X.S. Chen and W. Lu, Appl. Surf. Sci. 254, 4626 (2008). doi:10.1016/j.apsusc.2008.01.089

Zh. M. Wang, C. Rodriguez, Sh. Seydmohamadi, Yu. I. Mazur, Y. Z. Xie and G. J. Salamo, Appl. Phys. Lett. 94, 083107 (2009). doi:10.1063/1.3089695

J. Marquez, L. Geelhaar and K. Jacobi, Appl. Phys. Lett. 78, 2309 (2001). doi:10.1063/1.1365101

D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars and P. M. Petroff, Appl. Phys. Lett. 63, 3203 (1993). doi:10.1063/1.110199

D. Bimberg, M. Grundmann and N. N. Ledentsov, Quantum Dot Heterostructures (Wiley, Chichester, 1999)

Google Scholar

S. S. Li, J. B. Xia, J. L. Liu, F. H. Yang, Z. C. Niu, S.L. Feng and H.Z. Zheng, J. Appl. Phys. 90, 6151 (2001). doi:10.1063/1.1416855

L. Geelhaar, J. Marquez, P. Kratzer and K. Jacobi, Phys. Rev. Lett. 86, 3815 (2001). doi:10.1103/PhysRevLett.86.3815

Z. M. Wang, J. L. Shultz and G. J. Salamo, Appl. Phys. Lett. 83, 1749 (2003). doi:10.1063/1.1606891