One-dimensional GaN nanomaterials transformed from one-dimensional Ga2O3 and Ga nanomaterials
Corresponding Author: Y. H. Gao
Nano-Micro Letters,
Vol. 1 No. 1 (2009), Article Number: 4-8
Abstract
One-dimensional (1D) GaN nanomaterials exhibiting various morphologies and atomic structures were prepared via ammoniation of either Ga2O3 nanoribbons, Ga2O3 nanorods or Ga nanowires filled into carbon nanotubes (CNTs). The 1D GaN nanomaterials transformed from Ga2O3 nanoribbons consisted of numerous GaN nanoplatelets having the close-packed plane, i.e. (0002)2H or (111)3C parallel to the axes of starting nanoribbons. The 1D GaN nanomaterials converted from Ga2O3 nanorods were polycrystalline rods covered with GaN nanoparticles along the axes. The 1D GaN nanomaterials prepared from Ga nanowires filled into CNTs displayed two dominant morphologies: (i) single crystalline GaN nanocolumns coated by CNTs, and (ii) pure single crystalline GaN nanowires. The cross-sectional shape of GaN nanowires were analyzed through the transmission electron microscopy (TEM) images. Formation mechanism of all-mentioned 1D GaN nanomaterials is then thoroughly discussed.
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References
J. Pankove and T. Moustakas, Gallium Nitride (GaN), Semiconductors and Semimetals, Academic Press, San Diego, 1998.
H. W. Seo, L. W. Tu, Y. T. Lin, C. Y. Ho, Q. Y. Chen, L. Yuan, D. P. Norman and N. J. Ho, Appl. Phys. Lett. 94, 201907 (2009). doi:10.1063/1.3129191
W. Q. Han, S. S. Fan, Q. Q. Li and Y. D. Hu, Science 277, 1287 (1997). doi:10.1126/science.277.5330.1287
X. Duan and C. M. Lieber, J. Am. Chem. Soc. 122, 188 (2000). doi:10.1021/ja993713u
W. Q. Han and A. Zettl, Adv. Mater. 14, 1560 (2002). doi:10.1002/1521-4095(20021104)14:21<1560::AID-ADMA1560>3.0.CO;2-P
G. S. Cheng, L. D. Zhang, Y. Zhu, G. T. Fei, L. Li, C. M. Mo and Y. Q. Mao, Appl. Phys. Lett. 75, 2455 (1999). doi:10.1063/1.125046
L. X. Zhao, G. W. Meng, X. S. Peng, X. Y. Zhang and L. D. Zhang, J. Crystal Growth 235, 124 (2002). doi:10.1016/S0022-0248(01)01836-X
X. F. Duan and C. M. Lieber, J. Am. Chem. Soc. 122, 188 (2000). doi:10.1021/ja993713u.
X. H. Chen, J. Xu, R. M. Wang and D. P. Yu, Adv. Mater. 15, 419 (2003). doi:10.1002/adma.200390097
X. T. Zhou, T. K. Sham, Y. Y. Shan, X. F. Duan, S. T. Lee and R. A. Rosenberg, J. Apply. Phys. 97, 104315 (2005).
R. Q. Zhang, Y. Lifshitz and S. T. Lee, Adv. Mater. 15, 635 (2003). doi:10.1002/adma.200301641
S.Y. Bae, H. W. Seo, J. Park, H. Yang, J. C. Park and S. Y. Lee, Appl. Phys. Lett. 81, 126 (2002). doi:10.1063/1.1490395
F. Qian, Y. Li, S. Gradecak, D. Wang, C. J. Barrelet and C. M. Lieber, Nano Lett. 4, 1975 (2004). doi:10.1021/nl0487774
H. M. Kim, D. S. Kim, Y. S. Park, D. Y. Kim, T. W. Kang and K. S. Chung, Adv. Mater. 14, 991 (2002).
Z. Liliental-Weber, Y. H. Gao and Y. Bando, J. Elec. Mater. 31, 391 (2002).
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T. Ogi, Y. Kaihatsu, F. Iskandar, E. Tanabe and K. Okuyama, Adv. Powder. Tech. 20, 29 (2009).
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Y. H. Gao and Y. Bando, Nature 415, 599 (2002). doi:10.1038/415599a
P. B. Hirsch, I. Howie, R. B. Nicholson and D. W. Pashley, Electron Microscopy of Thin Crystals (Butterworths Co. LTD, London, 1965) pp. 159.
J. Q. Hu, Q. Li, N. B. Wong, C.S. Lee and S. T. Lee, Chem. Mater. 14, 1216 (2002). doi:10.1021/cm0107326
X. D. Wang, P. X. Gao, J. Li, C. J. Summers and Z. L. Wang, Adv. Mater. 14, 1732 (2002). doi:10.1002/1521-4095(20021203)14:23<1732::AID-ADMA1732>3.0.CO;2-5
J. Q. Hu, Y. Bando, D. Golberg and Q. L. Liu, Angew. Chem. Int. Ed. 42, 3493 (2003). doi:10.1002/anie.200351001
J. Dinesh, M. Eswaramoorthy and C. N. R. Rao, J. Phys. Chem. C. 111, 510 (2007). doi:10.1021/jp0674423