Optimization of Pulse Laser Annealing to Increase Sharpness of Implanted-junction Rectifier in Semiconductor Heterostructure
Corresponding Author: E. L. Pankratov
Nano-Micro Letters,
Vol. 2 No. 4 (2010), Article Number: 256-267
Abstract
It has been recently shown that inhomogeneity of a semiconductor heterostructure leads to increasing of sharpness of diffusion-junction and implanted-junction rectifiers, which are formed in the semiconductor heterostructure. It has been also shown that together with increasing of the sharpness, homogeneity of impurity distribution in doped area increases. The both effect could be increased by formation of an inhomogeneous distribution of temperature (for example, by laser annealing). Some conditions on correlation between inhomogeneities of the semiconductor heterostructure and temperature distribution have been considered. Annealing time has been optimized for pulse laser annealing.
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- A. B. Grebene, “Bipolar and MOS analogous integrated circuit design”, (John Wyley and Sons, New York, 1983).
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References
A. B. Grebene, “Bipolar and MOS analogous integrated circuit design”, (John Wyley and Sons, New York, 1983).
Z. Y. Gotra, “Technology of microelectronic devices”, Radio and communication, (Moscow, 1991, in Russian).
V. I. Lachin and N. S. Savelov, “Electronics”, (Phoenix, Rostov-na-Donu, 2001, in Russian).
S. T. Sisianu, T. S. Sisianu and S. K. Railean, Semicond. 36, 581 (2002). doi:10.1134/1.1478552
T. Ahlgren, J. Likonen, J. Slotte, J. Raisanen, M. Rajatore and J. Keinonen, Phys. Rev. B. 56, 4597 (1997). doi:10.1103/PhysRevB.56.4597
E. L. Pankratov, Phys. Rev. B 72, 075201 (2005). doi:10. 1103/PhysRevB.72.075201
E. L. Pankratov and B. Spagnolo, Eur. Phys. J. B 46, 15 (2005). doi:10.1140/epjb/e2005-00233-1
E. L. Pankratov, Phys. Lett. A 372, 1897 (2008). doi:10.1016/j.physleta.2007.10.058
E. I. Zorin, P. V. Pavlov and D. I. Tetelbaum, “Ion doping of semiconductors”, (Energiya, Moscow, 1975, in Russian).
H. Ryssel and I. Ruge, Ion implantation, (Teubner, Stuttgart, Germany, 1978).
P. M. Fahey, P. B. Griffin and J. D. Plummer, Rev. Mod. Phys. 61, 289 (1989). doi:10.1103/RevModPhys.61.289
K. V. Shalimova, “Physics of semiconductors”, (Energo-atomizdat, Moscow, 1985, in Russian).
V. I. Mazhukin, V. V. Nosov and U. Semmler, Mathematical modelling 12, 75 (2000).
Y. D. Sokolov, Applied Mechanics 1, 23 (1955) (in Russian).
K. K. Ong, K. L. Pey, P. S. Lee, A. T. S. Wee, X. C. Wang and Y. F. Chong, Appl. Phys. Lett. 89, 172111 (2006). doi:10.1063/1.2364834