Synthesis and Electrical Properties of Well-Ordered Layered α-MoO3 Nanosheets
Corresponding Author: H. Dhaouadi
Nano-Micro Letters,
Vol. 3 No. 4 (2011), Article Number: 242-248
Abstract
α-MoO3 ordered nanosheets have been synthesized under hydrothermal conditions using commercial MoO3 and hydroquinone as structuring agent. X-ray diffraction (XRD), scanning electron microscope (SEM) and transmission electron microscopy (TEM) were used to analyse the obtained material. The conductivity mechanism of the Molybdenum ordered nanosheets has been investigated using combined complex impedance and modulus formalism.
The temperature dependence of the conductivity, which was between 473 and 573 K, is very close to the Arrhenius’ law, with an activation energy of 0.76 eV. However, the conductivity of the material increases with temperature. It shows a typical negative temperature coefficient resistance (NTCR) similar to that of a semiconductor. The dielectric properties of the MoO3 compound have been studied in the temperature range of 473–573 K as well as the frequency range of 10 Hz to 13 MHz. The ac-conductivity for high frequency σac (ω) obeys the universal power law.
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References
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Z. L. Wang, Annu. Rev. Phys. Chem. 55, 159 (2004). http://dx.doi.org/10.1146/annurev.physchem.55.091602.094416
J. Wang, G. Dub, R. Zeng, B. Niua, Z. Chen, Z. Guoc and S. Dou, Electrochimica Acta 55, 4805 (2010). http://dx.doi.org/10.1016/j.electacta.2010.03.048
C. Santato, M. Odziemkowski, M. Ulmann and J. Augustynski. J. Am. Chem. Soc. 123, 10639 (2001). http://dx.doi.org/10.1021/ja011315x
K. Pan, Q. Zhang, Q. Wang, Z. Liu, D. Wang, J. Li and Y. Bai, Thin Solid Films 515, 4085 (2007). http://dx.doi.org/10.1016/j.tsf.2006.11.007
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Y. Chen, J. Li, Y. Han, X. Yang and J. Dai, J. Crystal Growth 245, 163 (2002). http://dx.doi.org/10.1016/S0022-0248(02)01690-1
X. S. Fang, C. H. Ye, X. S. Peng, Y. H. Wang, Y. C. Wu and L. D. Zhang, J. Crystal Growth 263, 263 (2004). http://dx.doi.org/10.1016/j.jcrysgro.2003.11.056
B. W. Li, M. Osada, T. C. Ozawa, R. M. K. Akatsukal, Y. Ebina, H. Funakub, S. Ueda, K. Kobayashi and T. Sasaki, Jap. J. Appl. Phys. 48, 09KA15 (2009).
T. Yamaki, R. Shinohara and K. Asai, Thin Solid Films 393, 154 (2010). http://dx.doi.org/10.1016/S0040-6090(01)01063-X
R. S. Patil, M. D. Uplane and P. S. Patil, Int. J. Electrochem. Sci. 3, 259 (2008).
M. B. Rahmani, S. H. Keshmiri, J. Yu, A. Z. Sadek, L. Al-Mashat, A. Moafi, K. Latham, Y.X. Li, W. Wlodarski and K. Kalantar-zadeh, Sensors and Actuators B 145, 13 (2010). http://dx.doi.org/10.1016/j.snb.2009.11.007
C. Tagusagawa, A. Takagaki, K. Takanabe, K. Ebitani, S. Hayashi and K. Domen, J. Catalysis 270, 206 (2010). http://dx.doi.org/10.1016/j.jcat.2009.12.019
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Y. Lu, M. Wei, Z. Wang, D. G. Evans, X. Duan, Y. Lu, M. Wei, Z. Wang, David G. Evans and X. Duan, Electrochem. Commun. 6, 672 (2004). http://dx.doi.org/10.1016/j.elecom.2004.04.023
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E. Heracleous, A. F. Lee, I. A. Vasalos and A. A. Lemonidou, Cataly. Lett. 88, 47 (2003). http://dx.doi.org/10.1023/A:1023534816277
T. Brezesinski, J. Wang, S. H. Tolbert and B. Dunn, Nat. Mater. 9, 146 (2010). http://dx.doi.org/10.1038/nmat2612
L. A. Riley, S. H. Lee, L. Gedvilias and A. C. Dillon, J. Power Sources 195, 588 (2010). http://dx.doi.org/10.1016/j.jpowsour.2009.08.013
Y. Jing, Q. Pan, Z. Cheng, X. Dong and Y. Xiang, Mater. Sci. Eng. B 138, 55 (2007). http://dx.doi.org/10.1016/j.mseb.2007.01.015
R. M. Hill and A. K. Jonscher, J. Non-Cryst. Solids 32, 53 (1979). http://dx.doi.org/10.1016/0022-3093(79)90064-4
N. F. Mott and E. A. Davis, “Electronic Processes in Non-Crystalline Materials”, Clarendon Press, Oxford, 1979.
R. H. Chen, R. Y. Chang and S. C. Shern, J. Phys. Chem. Solids 63, 2069 (2002). http://dx.doi.org/10.1016/S0022-3697(02)00196-8
A. Kumar, B. P. Singh, R. N. P. Choudhary and A. K. Thakur, Mater. Chem. Phys. 99, 150 (2006). http://dx.doi.org/10.1016/j.matchemphys.2005.09.086
K. W. Wagner, Ann. Phys. 40, 817 (1913). http://dx.doi.org/10.1002/andp.19133450502
J. C. Maxwell, “Electricity and magnetism”, Oxford University Press, p 828 (1973)
S. Lanfredi, P. S. Saia, R. Lebullenger and A. C. Hernaldes, Solid State Ionics 146, 329 (2002). http://dx.doi.org/10.1016/S0167-2738(01)01030-X
D. P. Almond, A. R. West and R. Grant, Solid State Commun. 44, 1277 (1982). http://dx.doi.org/10.1016/0038-1098(82)91103-6
B. V. R. Chowdari and K. Radhakrishnan, J. Non-Cryst. Solids 110, 101 (1989). http://dx.doi.org/10.1016/0022-3093(89)90187-7
D. P. Almond, G. Duncan and A. R. West, Solid State Ionics 8, 159 (1983). http://dx.doi.org/10.1016/0167-2738(83)90079-6
B. V. R. Chowdari and K. Radhakrishnan, J. Non-Cryst. Solids 108, 323 (1989). http://dx.doi.org/10.1016/0022-3093(89)90304-9
D. P. Almond and A. R. West, Solid State Ionics 11, 57 (1983). http://dx.doi.org/10.1016/0167-2738(83)90063-2
A. K. Jonscher, “Dielectric Relaxation in Solids”, Chelsea Dielectrics Press, London (1983).
J. R. Macdonald, “Impedance Spectroscopy”, John Wiley & Sons, New York (1987).