Urchin-like NiO Superstructures Prepared by Simple Thermal Decomposition Process
Corresponding Author: Hua Jiao
Nano-Micro Letters,
Vol. 3 No. 3 (2011), Article Number: 166-170
Abstract
Urchin-like NiO superstructures have been prepared via a thermal decomposition reaction of NiC2O4 at 400°C for 1 h. The morphology and structure of the synthesized urchin-like superstructures have been characterized by X-ray diffraction, field emission scanning electron microscopy and transmission electron microscopy. The results show that urchin-like NiO superstructures were a polycrystal with cubic structure and typical diameters of 200 to 500 nm and the self-assembly nanoparticles average diameter is 14 nm. The as-prepared NiO superstructures have a high Brunauer-Emmett-Teller surface area of about 60.32 m2/g. The UV-vis spectrum of urchin-like NiO consists of one peak at 357 nm (3.47 eV).
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- B. Varghese, M. V. Reddy, Y. W. Zhu, S. L. Chang, T. C. Hoong, G. V. Subba Rao, B. V. R. Chowdari, T.S. W. Andrew, T. L. Chwee and H. S. Chorng, Chem. Mater. 20, 3360(2008). http://dx.doi.org/10.1021/cm703512k
- T. Y. Kim, J. Y. Kim, S. H. Lee, H. W. Shim, S. H. Lee, E. K. Suh and K. S. Nahm, Synth. Met. 144, 61(2004). http://dx.doi.org/10.1016/j.synthmet.2004.01.010
- J. A. Dirksen, K. Duval and T. A. Ring, Sens. Actuators B-Chem. 80, 106(2001). http://dx.doi.org/10.1016/S0925-4005(01)00898-X
- I. Hotovy, V. Rehacek, P. Siciliano, S. Capone and L. Spiess, Thin Sol. Films 418, 9(2002). http://dx.doi.org/10.1016/S0040-6090(02)00579-5
- M. Matsumiya, F. Qiu, W. Shin, N. Izu, N. Murayama and S. Kanzaki, Thin Sol. Films 419, 213(2002). http://dx.doi.org/10.1016/S0040-6090(02)00762-9
- X. Wang, L. Li, Y. G. Zhang, S. T. Wang, Z. D. Zhang, L. F. Fei and Y. T. Qian, Cryst. Growth Des. 6, 2163(2006). http://dx.doi.org/10.1021/cg060156w
- X. H. Liu, G. Z. Qiu, Z. Wang and X. G. Li, Nanotechnology 16, 1400(2005). http://dx.doi.org/10.1088/0957-4484/16/8/071
- X. M. Ni, Q. B. Zhao, F. Zhou, H. G. Zheng, J. Cheng and B. B. Li, J. Cryst. Growth. 289, 299(2006). http://dx.doi.org/10.1016/j.jcrysgro.2005.10.017
- Z. Y. Wu, C. M. Liu, L. Guo, R. Hu, M. I. Abbas, T. D. Hu and H. B. Xu, J. Phys. Chem. B109, 2512(2005). http://dx.doi.org/10.1021/jp0466183
- S. A. Needham, G. X. Wang and H. K. Liu, J. Power Sources. 159, 254(2006). http://dx.doi.org/10.1016/j.jpowsour.2006.04.025
- F. Jiao, A. H. Hill, A. Harrison, A. Berko, A. V. Chadwick and P. G. Bruce, J. Am. Chem. Soc. 130, 5262(2008). http://dx.doi.org/10.1021/ja710849r
- X. Wang, L. J. Yu, P. Hu and F. L. Yuan, Cryst. Growth Des. 7, 2415(2007). http://dx.doi.org/10.1021/cg060957z
- Z. Wei, M. Yao, L. Guo, Y. M. Li, J. H. Li and S. H. Yang, J. Am. Chem. Soc. 131, 2959(2009). http://dx.doi.org/10.1021/ja808784s
- D. B. Wang, C. X. Song, Z. S. Hu and X. J. Fu, Phys. Chem. B. 109, 1125(2005). http://dx.doi.org/10.1021/jp046797o
- X. M. Sun, J. F. Liu and Y. D. Li, Chem. Eur. J. 12, 2039(2006). http://dx.doi.org/10.1002/chem.200500660
- J. Liu, S. F. Du, L. Q. Wei, H. D. Liu, Y. J. Tian and Y. F. Chen, Mater. Lett. 60, 3601(2006). http://dx.doi.org/10.1016/j.matlet.2006.03.068
- Y. Wang, Q. S. Zhu and H. G. Zhang, Chem. Commun. 5231(2005). http://dx.doi.org/10.1039/b508807km
- X. F. Song, L. Gao, J. Phys. Chem. C 112, 15299(2008). http://dx.doi.org/10.1021/jp804921g
- Y. Lin, T. Xie, B. Cheng, B. Y. Geng and L. D. Zhang, Chem. Phys. Lett. 380, 521(2003). http://dx.doi.org/10.1016/j.cplett.2003.09.066
- J. Feng, H. H. Adrian, H. Andrew, B. Aaron, V. C. Alan and G. B. Peter, J. Am. Chem. Soc. 130, 5262(2008). http://dx.doi.org/10.1021/ja710849r
References
B. Varghese, M. V. Reddy, Y. W. Zhu, S. L. Chang, T. C. Hoong, G. V. Subba Rao, B. V. R. Chowdari, T.S. W. Andrew, T. L. Chwee and H. S. Chorng, Chem. Mater. 20, 3360(2008). http://dx.doi.org/10.1021/cm703512k
T. Y. Kim, J. Y. Kim, S. H. Lee, H. W. Shim, S. H. Lee, E. K. Suh and K. S. Nahm, Synth. Met. 144, 61(2004). http://dx.doi.org/10.1016/j.synthmet.2004.01.010
J. A. Dirksen, K. Duval and T. A. Ring, Sens. Actuators B-Chem. 80, 106(2001). http://dx.doi.org/10.1016/S0925-4005(01)00898-X
I. Hotovy, V. Rehacek, P. Siciliano, S. Capone and L. Spiess, Thin Sol. Films 418, 9(2002). http://dx.doi.org/10.1016/S0040-6090(02)00579-5
M. Matsumiya, F. Qiu, W. Shin, N. Izu, N. Murayama and S. Kanzaki, Thin Sol. Films 419, 213(2002). http://dx.doi.org/10.1016/S0040-6090(02)00762-9
X. Wang, L. Li, Y. G. Zhang, S. T. Wang, Z. D. Zhang, L. F. Fei and Y. T. Qian, Cryst. Growth Des. 6, 2163(2006). http://dx.doi.org/10.1021/cg060156w
X. H. Liu, G. Z. Qiu, Z. Wang and X. G. Li, Nanotechnology 16, 1400(2005). http://dx.doi.org/10.1088/0957-4484/16/8/071
X. M. Ni, Q. B. Zhao, F. Zhou, H. G. Zheng, J. Cheng and B. B. Li, J. Cryst. Growth. 289, 299(2006). http://dx.doi.org/10.1016/j.jcrysgro.2005.10.017
Z. Y. Wu, C. M. Liu, L. Guo, R. Hu, M. I. Abbas, T. D. Hu and H. B. Xu, J. Phys. Chem. B109, 2512(2005). http://dx.doi.org/10.1021/jp0466183
S. A. Needham, G. X. Wang and H. K. Liu, J. Power Sources. 159, 254(2006). http://dx.doi.org/10.1016/j.jpowsour.2006.04.025
F. Jiao, A. H. Hill, A. Harrison, A. Berko, A. V. Chadwick and P. G. Bruce, J. Am. Chem. Soc. 130, 5262(2008). http://dx.doi.org/10.1021/ja710849r
X. Wang, L. J. Yu, P. Hu and F. L. Yuan, Cryst. Growth Des. 7, 2415(2007). http://dx.doi.org/10.1021/cg060957z
Z. Wei, M. Yao, L. Guo, Y. M. Li, J. H. Li and S. H. Yang, J. Am. Chem. Soc. 131, 2959(2009). http://dx.doi.org/10.1021/ja808784s
D. B. Wang, C. X. Song, Z. S. Hu and X. J. Fu, Phys. Chem. B. 109, 1125(2005). http://dx.doi.org/10.1021/jp046797o
X. M. Sun, J. F. Liu and Y. D. Li, Chem. Eur. J. 12, 2039(2006). http://dx.doi.org/10.1002/chem.200500660
J. Liu, S. F. Du, L. Q. Wei, H. D. Liu, Y. J. Tian and Y. F. Chen, Mater. Lett. 60, 3601(2006). http://dx.doi.org/10.1016/j.matlet.2006.03.068
Y. Wang, Q. S. Zhu and H. G. Zhang, Chem. Commun. 5231(2005). http://dx.doi.org/10.1039/b508807km
X. F. Song, L. Gao, J. Phys. Chem. C 112, 15299(2008). http://dx.doi.org/10.1021/jp804921g
Y. Lin, T. Xie, B. Cheng, B. Y. Geng and L. D. Zhang, Chem. Phys. Lett. 380, 521(2003). http://dx.doi.org/10.1016/j.cplett.2003.09.066
J. Feng, H. H. Adrian, H. Andrew, B. Aaron, V. C. Alan and G. B. Peter, J. Am. Chem. Soc. 130, 5262(2008). http://dx.doi.org/10.1021/ja710849r