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Vol. 3 No. 3 (2011)

III-Nitride-Based Quantum Dots and Their Optoelectronic Applications

https://doi.org/10.1007/BF03353673
G. E. Weng
Department of Physics, Laboratory of Micro-Nano Optoelectronics, Xiamen University, Xiamen 361005, People’s Republic of China
A. K. Ling
Department of Physics, Laboratory of Micro-Nano Optoelectronics, Xiamen University, Xiamen 361005, People’s Republic of China
X. Q. Lv
MEMS Research Center, Xiamen University, Xiamen 361005, People’s Republic of China
J. Y. Zhang
Department of Physics, Laboratory of Micro-Nano Optoelectronics, Xiamen University, Xiamen 361005, People’s Republic of China
B. P. Zhang
Department of Physics, Laboratory of Micro-Nano Optoelectronics, Xiamen University, Xiamen 361005, People’s Republic of China

Corresponding Author: B. P. Zhang

bzhang@xmu.edu.cn

Nano-Micro Letters, Vol. 3 No. 3 (2011), Article Number: 200-207

Abstract

During the last two decades, III-nitride-based quantum dots (QDs) have attracted great attentions for optoelectronic applications due to their unique electronic properties. In this paper, we first present an overview on the techniques of fabrication for III-nitride-based QDs. Then various optoelectronic devices such as QD lasers, QD light-emitting diodes (LEDs), QD infrared photodetectors (QDIPs) and QD intermediate band (QDIB) solar cells (SCs) are discussed. Finally, we focus on the future research directions and how the challenges can be overcome.

Keywords

III-nitride-based quantum dots Lasers Light-emitting diods Infrared photodetectors Solar cells
Weng, G. E., A. K. Ling, X. Q. Lv, J. Y. Zhang, and B. P. Zhang. 2011. “III-Nitride-Based Quantum Dots and Their Optoelectronic Applications”. Nano-Micro Letters 3 (3):200-207. https://doi.org/10.1007/BF03353673.
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