Schottky photodiode using submicron thick diamond epilayer for flame sensing

Y. Koide; M. Y. Liao; J. Alvarez; M. Imura; K. Sueishi; F. Yoshifusa

doi:10.1007/BF03353603

Issue

Vol. 1 No. 1 (2009)

Issue Published : Sep 1, 2009

Schottky photodiode using submicron thick diamond epilayer for flame sensing

https://doi.org/10.1007/BF03353603

Y. Koide

Sensor Materials Center (SenMC), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, 305-0044 Ibaraki, Japan

M. Y. Liao

Sensor Materials Center (SenMC), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, 305-0044 Ibaraki, Japan

J. Alvarez

2Laboratoire de Génie Electrique de Paris (UMR 8507 CNRS), Ecole Supérieure d’Electricité, Universités Paris VI et Paris XI, 11 rue Joliot-Curie Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex, France

M. Imura

International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, 305-0044 Ibaraki, Japan

K. Sueishi

ANTEC Co. 116-3 Mameda, Oku-cho, Setouch, 701-4254 Okayama, Japan

F. Yoshifusa

ANTEC Co. 116-3 Mameda, Oku-cho, Setouch, 701-4254 Okayama, Japan

Corresponding Author: M. Y. Liao

Meiyong.Liao@nims.go.jp

Nano-Micro Letters, Vol. 1 No. 1 (2009), Article Number: 30-33
Article Published : Nov 25, 2009

Abstract

The sensing of a flame can be performed by using wide-bandgap semiconductors, which offer a high signal-to-noise ratio since they only response the ultraviolet emission in the flame. Diamond is a robust semiconductor with a wide-bandgap of 5.5 eV, exhibiting an intrinsic solar-blindness for deep-ultraviolet (DUV) detection. In this work, by using a submicron thick boron-doped diamond epilayer grown on a type-Ib diamond substrate, a Schottky photodiode device structure- based flame sensor is demonstrated. The photodiode exhibits extremely low dark current in both forward and reverse modes due to the holes depletion in the epilayer. The photodiode has a photoconductivity gain larger than 100 and a threshold wavelength of 330 nm in the forward bias mode. CO and OH emission bands with wavelengths shorter than 330 nm in a flame light are detected at a forward voltage of −10 V. An alcohol lamp flame in the distance of 250 mm is directly detected without a focusing lens of flame light.

Keywords

Flame sensing Boron-doped diamond Schottky photodiode

Koide, Y., M. Y. Liao, J. Alvarez, M. Imura, K. Sueishi, and F. Yoshifusa. 2009. “Schottky Photodiode Using Submicron Thick Diamond Epilayer for Flame Sensing”. Nano-Micro Letters 1 (1):30-33. https://doi.org/10.1007/BF03353603.

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