Optical properties of ZnO and Mn-doped ZnO nanocrystals by vapor phase transport processes
Corresponding Author: X. Y. Ma
Nano-Micro Letters,
Vol. 1 No. 1 (2009), Article Number: 45-48
Abstract
In this paper we investigated the optical properties of ZnO and Mn doped ZnO nanocrystals that were fabricated by a vapor phase transport growth process, using zinc acetate dihydrate with or without Mn in a constant O2/Ar mixture gas flowing through the furnace at 400≈600°C, respectively. The as grown ZnO nanocrystals are homogeneous with a mean size of 19 nm observed by scanning electron microscope (SEM). The optical characteristics were analyzed by absorption spectra and photoluminescence (PL) spectra at room-temperature. For ZnO nanocrystals, a strong and predominant UV emission peaked at 377 nm was found in the PL spectra. For Mn doped ZnO nanocrystals, in addition to the strong UV emission, a strong blue emission peaked at 435 nm was observed as well. By doping Mn ions, the major UV emission shifts from 377 nm to 408 nm, showing that Mn ions were not only incorporated into ZnO Ncs, but also introduced an impurity level in the bandgap. Moreover, with the concentration of Mn increasing, the relative intensities of the two emissions change largely, and the photoluminescence mechanism of them is discussed.
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- X. D. Gao, X. M. Li and W. D. Yu, Mater. Res. Bull. 40, 1104 (2005). doi:10.1016/j.materresbull.2005.03.018
- H. S. Kang, B. D. Ahn, J. H. Kim, G. H. Kim, S. H. Lim, H. W. Chang and S. Y. Lee, Appl. Phys. Lett. 88, 202108 (2006). doi:10.1063/1.2203952
- G. D. Yuan, Z. Z. Ye, L. P. Zhu, Q. Qian, B. H. Zhao, R. X. Fan, Craig L. Perkins and S. B. Zhang, Appl. Phys. Lett. 86, 202106 (2005). doi:10.1063/1.1928318
- S. K. Mandal and T. K. Nath, Thin solid films 515, 2535 (2006). doi:10.1016/j.tsf.2006.03.032
- T. Dietl, H. Ohno, F. Matsukura, J. Cibert and D. Ferrand, Science 287, 1019 (2000). doi:10.1126/science.287.5455.1019
- T. Dietl, Semicond. Sci. Technol. 17, 377 (2002). doi:10.1088/0268-1242/17/4/310
- E. De Posada, G. Tobin, E. McGlynn and J. G. Lunney, Appl. Surf. Sci. 208, 589 (2003).
- Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, Y. W. Heo, M. P. Ivill, K. Ip, D. P. Norton, S. J. Pearton, J. Kelly, R. Rairigh, A. F. Hebard and T. Steiner, J. Vac. Sci. Technol. B 23, 1 (2005).
- M. Berciu and R. N. Bhatt, Phys. Rev. Lett. 87, 107203 (2001).
- H. Zhou, H. Alves and D. M. Hofmann, Appl. Phys. Lett. 80, 210 (2002). doi:10.1063/1.1432763
- J. H. Li and J. Y. Zhang, Chin. J. Liquid Cryst. Display 21, 615 (2006).
- J. G. Lu, Z. Z. Ye and J. Y. Huang, Appl. Phys. Lett. 88, 063110 (2006). doi:10.1063/1.2172154
- R. Viswanatha, S. Sapra and S. S. Gupta, J. Phys. Chem. B 108, 6303 (2004). doi:10.1021/jp049960o
- X. T. Zhang, Y. C. Liu and J. Y. Zhang, J. Cryst. Growth 243, 80 (2003). doi:10.1016/S0022-0248(03)01143-6
- R. B. Bylsma, W. M. Becker and J. Kossut, Phys. Rev. B 33, 8207 (1986). doi:10.1103/PhysRevB.33.8207
References
X. D. Gao, X. M. Li and W. D. Yu, Mater. Res. Bull. 40, 1104 (2005). doi:10.1016/j.materresbull.2005.03.018
H. S. Kang, B. D. Ahn, J. H. Kim, G. H. Kim, S. H. Lim, H. W. Chang and S. Y. Lee, Appl. Phys. Lett. 88, 202108 (2006). doi:10.1063/1.2203952
G. D. Yuan, Z. Z. Ye, L. P. Zhu, Q. Qian, B. H. Zhao, R. X. Fan, Craig L. Perkins and S. B. Zhang, Appl. Phys. Lett. 86, 202106 (2005). doi:10.1063/1.1928318
S. K. Mandal and T. K. Nath, Thin solid films 515, 2535 (2006). doi:10.1016/j.tsf.2006.03.032
T. Dietl, H. Ohno, F. Matsukura, J. Cibert and D. Ferrand, Science 287, 1019 (2000). doi:10.1126/science.287.5455.1019
T. Dietl, Semicond. Sci. Technol. 17, 377 (2002). doi:10.1088/0268-1242/17/4/310
E. De Posada, G. Tobin, E. McGlynn and J. G. Lunney, Appl. Surf. Sci. 208, 589 (2003).
Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, Y. W. Heo, M. P. Ivill, K. Ip, D. P. Norton, S. J. Pearton, J. Kelly, R. Rairigh, A. F. Hebard and T. Steiner, J. Vac. Sci. Technol. B 23, 1 (2005).
M. Berciu and R. N. Bhatt, Phys. Rev. Lett. 87, 107203 (2001).
H. Zhou, H. Alves and D. M. Hofmann, Appl. Phys. Lett. 80, 210 (2002). doi:10.1063/1.1432763
J. H. Li and J. Y. Zhang, Chin. J. Liquid Cryst. Display 21, 615 (2006).
J. G. Lu, Z. Z. Ye and J. Y. Huang, Appl. Phys. Lett. 88, 063110 (2006). doi:10.1063/1.2172154
R. Viswanatha, S. Sapra and S. S. Gupta, J. Phys. Chem. B 108, 6303 (2004). doi:10.1021/jp049960o
X. T. Zhang, Y. C. Liu and J. Y. Zhang, J. Cryst. Growth 243, 80 (2003). doi:10.1016/S0022-0248(03)01143-6
R. B. Bylsma, W. M. Becker and J. Kossut, Phys. Rev. B 33, 8207 (1986). doi:10.1103/PhysRevB.33.8207