Novel micro-ring structured ZnO photoelectrode for dye-sensitized solar cell

M. F. Hossain; Z. H. Zhang; T. Takahashi

doi:10.1007/BF03353618

Issue

Vol. 2 No. 1 (2010)

Issue Published : Jan 1, 2010

Novel micro-ring structured ZnO photoelectrode for dye-sensitized solar cell

https://doi.org/10.1007/BF03353618

M. F. Hossain

Graduate School of Science and Engineering for Education, University of Toyama, 3190 Gofuku, Toyama 930-8555, Japan

Z. H. Zhang

Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama 930-8555,Japan

T. Takahashi

Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama 930-8555,Japan

Corresponding Author: T. Takahashi

takahash@eng.u-toyama.ac.jp

Nano-Micro Letters, Vol. 2 No. 1 (2010), Article Number: 53-55
Article Published : Apr 8, 2010

Abstract

The micro-ring like structured zinc oxide (ZnO) film was deposited on SnO₂: F coated glass substrate by sol-gel dip-coating technique with 1.0 g polyethylene glycol (PEG) content. The surface morphology of micro-ring structured ZnO film has been confirmed by the scanning electron microscope. This ZnO film is used to fabricate the solar cell with the help of ruthenium based dye and carbon counter electrode. The photoelectric and incident photon-to-current conversion efficiency was 1.17% and 48.4%, respectively. The DSC results have been compared with ZnO films prepared without PEG contents.

Keywords

Zinc oxide Dye-sensitized solar cell Polyethylene glycol

Hossain, M. F., Z. H. Zhang, and T. Takahashi. 2010. “Novel Micro-Ring Structured ZnO Photoelectrode for Dye-Sensitized Solar Cell”. Nano-Micro Letters 2 (1):53-55. https://doi.org/10.1007/BF03353618.

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R. S. Mane, W. J. Lee, H. M. Pathan and S. H. Han, J. Phys. Chem. B 109, 24254 (2005). doi:10.1021/jp0531560

A. Kay and M. Grätzel, Chem. Mater. 14, 2930 (2002). doi:10.1021/cm0115968

T. P. Chou, Q. F. Zhang, G. E. Fryxell and G. Z. Cao. Adv. Mater. 19, 2588 (2007). doi:10.1002/adma.200602927

L. E. Greene, M. Law, B. D. Yuhas and P. Yang, J. Phys. Chem. C Lett. 111, 18451 (2007).

D. J. Gargas, M. E. Toimil-Molares and P. Yang, J. Am. Chem. Soc. 131, 2125 (2009). doi:10.1021/ja8092339

C. Klingshirn, R. Hauschild, J. Fallert and H. Kalt, Phys. Rev. B 75, 115203, (2007). doi:10.1103/PhysRevB.75.115203

A. L. Briseno, T. W. Holcombe, A. I. Boukai, E. C. Garnett, S. W. Shelton, J. J. M. Fréchet and P. Yang, Nano Lett. 10, 334 (2010). doi:10.1021/nl9036752

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M. F. Hossain, T. Takahashi and S. Biswas, Electrochem. Comm. 11, 1756 (2009). doi:10.1016/j.elecom.2009.07.011

N. Wang, X. Y. Li, Y. X. Wang, Y. Hou, X. J. Zou and G. H. Chen, Mater. Lett. 62, 3691 (2008). doi:10.1016/j.matlet.2008.04.052

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J. Xie, P. Li, Y. T. Li, Y. J. Wang and Y. Wei, Mater. Lett. 62, 2814 (2008). doi:10.1016/j.matlet.2008.01.053

M. F. Hossain, S. Biswas, M. Shahjahan and T. Takahashi, J. Vac. Sc. Tech. A 27, 1047 (2009). doi:10.1116/1.3139887

L. Zhifeng, L. Junwei, Y. Jing, X. Ying and J. Zhengguo, Mater. Lett. 62, 1190 (2008). doi:10.1016/j.matlet.2007.08.010

M. F. Hossain, S. Biswas and T. Takahashi, Thin Solid Films 517, 1294 (2008). doi:10.1016/j.tsf.2008.06.027

B. D. Cullity, Elements of X-ray Diffraction, Addison-Wesley Pub. Co. MA, 1978.

K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt and B. E. Gnade, J. Appl. Phys. 79, 7983 (1996). doi:10.1063/1.362349

K. Pradhan, K. Zhang, G. B. Loutts, U. N. Roy, Y. Cui and A. Burger, J. Phys. Condens Mat. 16, 7123 (2004). doi:10.1088/0953-8984/16/39/043

S. Mridha and D. Basak, Chem. Phys. Letts. 427, 62 (2006). doi:10.1016/j.cplett.2006.06.022

J. H. Lee and B. O. Park, Thin Solid Films 426, 94 (2003). doi:10.1016/S0040-6090(03)00014-2

W. U. Huynh, J. J. Dittmer and A. P. Alivisatos, Science 29, 2425 (2002). doi:10.1126/science.1069156

S. M. Sze, Physics of Semiconductor Devices, 2nd edition Wiley: New York, 1981.

Q. F. Zhang, C. S. Dandeneau, X. Zhou and G. Cao, Adv. Mater. 21, 4087 (2009). doi:10.1002/adma.200803827