Fabrication and characteristics of nitrogen-doped nanocrystalline diamond/p-type silicon heterojunction

D. Lu; H. D. Li; S. H. Cheng; J. J. Yuan; X. Y. Lv

doi:10.1007/BF03353619

Issue

Vol. 2 No. 1 (2010)

Issue Published : Jan 1, 2010

Fabrication and characteristics of nitrogen-doped nanocrystalline diamond/p-type silicon heterojunction

https://doi.org/10.1007/BF03353619

D. Lu

State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, PR China

H. D. Li

State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, PR China

S. H. Cheng

State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, PR China

J. J. Yuan

State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, PR China

X. Y. Lv

State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, PR China

Corresponding Author: H. D. Li

hdli@jlu.edu.cn

Nano-Micro Letters, Vol. 2 No. 1 (2010), Article Number: 56-59
Article Published : Apr 8, 2010

Abstract

Nitrogen-doped nanocrystalline diamond films (N-NDFs) have been deposited on p-type silicon (Si) by microwave plasma chemical vapor deposition. The reaction gases are methane, hydrogen, and nitrogen without the conventional argon (Ar). The N-NDFs were characterized by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy. The grain sizes are of 8∼10 nm in dimension. The N-NDF shows n-type behavior and the corresponding N-NDF/p-Si heterojunction diodes are realized with a high rectification ratio of 10² at ∼ 7.8 V, and the current density reaches to 1.35 A/cm² at forward voltage of 8.5 V. The findings suggest that fabricated by CH₄/H₂/N₂ without Ar, the N-NDFs and the related rectifying diodes are favorable for achieving high performance diamond-based optoelectronic devices.

Keywords

Nanocrystalline diamond film Chemical vapor deposition Nitrogen doped Heterojunction diodes Current-voltage characteristics

Lu, D., H. D. Li, S. H. Cheng, J. J. Yuan, and X. Y. Lv. 2010. “Fabrication and Characteristics of Nitrogen-Doped Nanocrystalline diamond/P-Type Silicon Heterojunction”. Nano-Micro Letters 2 (1):56-59. https://doi.org/10.1007/BF03353619.

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References

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References

R. Kalish, Carbon 37, 781 (1999). doi:10.1016/S0008-6223(98)00270-X.

P. K. Sitch, G. Jungnickel, M. Kaukonen, D. Porezag, Th. Frauenheim, M. R. Pederson and K. A. Jackson, J. Appl. Phys. 83, 9 (1998). doi:10.1063/1.367249

H. Kato, S. Yamasaki and H. Okushi, Diamond Relat. Mater. 16, 796 (2007). doi:10.1016/j.diamond.2006.11.085

K. Subramanian, W. P. Kang and J. L. Davidson, Proceeding 18th IVNC, 198 (2005).

P. Zapol, M. Sternberg, L. A. Curtiss, T. Frauenheim and D. M. Gruen, Phys. Rev. B 65, 045403 (2001). doi:10.1103/PhysRevB.65.045403

Q. Hu, M. Hirai, R. K. Joshi and A. Kumar, J. Phys. D: Appl. Phys. 42, 025301 (2009).

S. Bhattacharyya, O. Auciello, J. Birrell, J. A. Carlisle, L. A. Curtiss, A. N. Goyette, D. M. Gruen, A.R. Krauss, J. Schlueter, A. Sumant and P. Zapol, Appl. Phys. Lett. 79, 1441 (2001). doi:10.1063/1.1400761

T. Ikeda and K. Teii, Appl. Phys. Lett. 94, 072104 (2009). doi:10.1063/1.3082045

K. L. Ma, W. J. Zhang, Y. S. Zou, Y. M. Chong, K. M. Leung, I. Bello and S.T. Lee, Diamond Relat. Mater. 15, 626 (2006). doi:10.1016/j.diamond.2005.11.017

T. D. Corrigan, D. M. Gruen, A. R. Krauss, P. Zapol and R. P. H. Chang, Diamond Relat. Mater. 11, 43 (2002). doi:10.1016/S0925-9635(01)00517-9

T. Vandevelde, M. Nesladek, C. Quaeyhaegens and L. Stals, Thin Solid Films 290, 143 (1999). doi:10.1016/ S0040-6090(96)09189-4

Y. K. Liu, P. L. Tso, D. Pradhan, I. N. Lin, M. Clark and Y. Tzeng, Diamond Relat. Mater. 14, 2059 (2005). doi:10.1016/j.diamond.2005.06.012

K. L. Ma, J. X. Tang, Y. S. Zou, Q. Ye, W. J. Zhang and S. T. Lee, Appl. Phys. Lett. 90, 092105 (2007). doi:10.1063/1.2709953

B. D. Cullity, Elements of X-Ray Diffraction (Addison-Wesley, Reading,MA, 1978).

A. C. Ferrari and J. Robertson, Phys. Rev. B 63, 121405 (2001). doi:10.1103/PhysRevB.63.121405

J. Birrell, J. E. Gerbi, O Auciello, J. M. Gibson, D. M Gruen and L.A. Carlisle, J. Appl. Phys. 93, 5606 (2003). doi:10.1063/1.1564880

W. A. Yarbrough and R. Messier, Science 247, 688 (1990). doi:10.1126/science.247.4943.688

J. Nemanich, J. T. Glass, G. Lucovsky and R. E. Shroder, J. Vac. Sci. Technol. A6, 1783 (1988). doi:10.1116/1.575297

R. E. Shroder, R. J. Nemanich and J. T. Glass, Phys. Rev. B 41, 3738 (1990). doi:10.1103/PhysRevB.41.3738

R. Pfeiffer, H. Kuzmany, P. Knoll, S. Bokova, N. Salk and B. Gunther, Diamond Relat. Mater. 12, 268 (2003). doi:10.1016/S0925-9635(02)00336-9

S. Raina, W. P. Kang, J. L. Davidson and X. C. LeQuan, 215th ECS Meeting (2009).

P. Achatz, O. A. Williams, P. Bruno, D. M. Gruen, J. A. Garrido and M. Stutzmann, Phys. Rev. B 74, 155429 (2006). doi:10.1103/PhysRevB.74.155429

Issue

Vol. 2 No. 1 (2010)

Fabrication and characteristics of nitrogen-doped nanocrystalline diamond/p-type silicon heterojunction

Corresponding Author: H. D. Li

Abstract

Keywords

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