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Vol. 17 (2025)

Mixed-Dimensional Nanowires/Nanosheet Heterojunction of GaSb/Bi2O2Se for Self-Powered Near-Infrared Photodetection and Photocommunication

https://doi.org/10.1007/s40820-025-01793-2
Guangcan Wang
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People’s Republic of China
Zixu Sa
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People’s Republic of China
Zeqi Zang
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People’s Republic of China
Pengsheng Li
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People’s Republic of China
Mingxu Wang
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People’s Republic of China
Bowen Yang
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People’s Republic of China
Xiaoyue Wang
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People’s Republic of China
Yanxue Yin
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People’s Republic of China
Zai‑xing Yang
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People’s Republic of China

Corresponding Author: Zai‑xing Yang

zaixyang@sdu.edu.cn

Nano-Micro Letters, Vol. 17 (2025), Article Number: 284

Abstract

With high surface-to-volume ratio, the abundant surface states and high carrier concentration are challenging the near-infrared photodetection behaviors of narrow band gap semiconductors nanowires. In this study, the narrow band gap semiconductor of Bi2O2Se nanosheets (NSs) is adopted to construct mixed-dimensional heterojunctions with GaSb nanowires (NWs) for demonstrating the impressive self-powered NIR photodetection. Benefiting from the built-in electric field of ~ 140 meV, the as-constructed NW/NS mixed-dimensional heterojunction self-powered photodetector shows the low dark current of 0.07 pA, high Ilight/Idark ratio of 82 and fast response times of < 2/2 ms at room temperature. The self-powered photodetector performance can be further enhanced by fabricating the NW array/NS mixed-dimensional heterojunction by using a contact printing technique. The excellent photodetection performance promises the as-constructed NW/NS mixed-dimensional heterojunction self-powered photodetector in imaging and photocommunication.


Highlights:
1 The mixed-dimensional type II heterojunction of GaSb nanowires (NWs) and Bi2O2Se nanosheets (NSs) with a built-in electric field of ~ 140 meV is successfully constructed.
2 As-fabricated NW/NS and NW array/NS mixed-dimensional heterojunction photodetectors exhibit as-expected high-performance self-powered photodetection behaviors, including ultralow Idark (0.07 and 0.08 pA), superior Ilight/Idark ratios (82 and 182) and ultrafast photoresponse (< 2/2 and 6/4 ms).
3 As-fabricated NW array/NS mixed-dimensional heterojunction self-powered photodetector promises the future imaging and photocommunication.

Keywords

Near-infrared photodetection Self-powered photodetection Mixed-dimensional heterojunction GaSb nanowire Bi2O2Se nanosheet
Wang, Guangcan, Zixu Sa, Zeqi Zang, Pengsheng Li, Mingxu Wang, Bowen Yang, Xiaoyue Wang, Yanxue Yin, and Zai‑xing Yang. 2025. “Mixed-Dimensional Nanowires/Nanosheet Heterojunction of GaSb/Bi2O2Se for Self-Powered Near-Infrared Photodetection and Photocommunication”. Nano-Micro Letters 17 (June):284. https://doi.org/10.1007/s40820-025-01793-2.
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