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Vol. 18 (2026)

Coplanar Floating-Gate Antiferroelectric Transistor with Multifunctionality for All-in-One Analog Reservoir Computing

https://doi.org/10.1007/s40820-025-02049-9
Yufei Shi
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
Zijie Zheng
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
Jiali Huo
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
Yu‑Chieh Chien
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
Sifan Li
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
Haofei Zheng
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
Xiao Gong
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
Kah‑Wee Ang
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore

Corresponding Author: Kah‑Wee Ang

eleakw@nus.edu.sg

Nano-Micro Letters, Vol. 18 (2026), Article Number: 202

Abstract

Analog reservoir computing (ARC) systems offer an energy-efficient platform for temporal information processing. However, their physical implementation typically requires disparate materials and device architectures for different system components, leading to complicated fabrication processes and increased system complexity. In this work, we present a coplanar floating-gate antiferroelectric field-effect transistor (FG AFeFET) that unifies multiple neural functionalities within a single device, enabling the physical implementation of a complete ARC system. By combining a coplanar layout design with an area ratio engineering strategy, we achieve tunable device behaviors, including volatile responses for artificial neuron emulation, nonvolatile states for synaptic functions, and fading memory dynamics for reservoir operations. The mechanisms underlying these functionalities and their operating mechanism are systematically elucidated using load line analysis and energy band diagrams. Leveraging these insights, we demonstrate an all-in-one ARC system based on the unified coplanar FG AFeFET architecture, which achieves recognition accuracies of 95.6% and 83.4% on the MNIST and Fashion-MNIST datasets, respectively. These findings highlight the potential of coplanar FG AFeFETs to deliver area-efficient, design-flexible neuromorphic hardware for next-generation computing systems.


Highlights:
1 A novel coplanar structure design is proposed for floating-gate antiferroelectric field-effect transistor (FG AFeFET) demonstration with enhanced design flexibility and vertical scalability.
2 Multifunctionality is achieved within a single coplanar FG AFeFET via area ratio engineering, including volatile neuronal behavior, fading memory dynamics, and nonvolatile synaptic function. Systematic investigations into its detailed operating principles are conducted.
3 Seamless integration of a full analog reservoir computing system is demonstrated based on a unified coplanar FG AFeFET architecture, realizing satisfactory accuracies for pattern recognition tasks.

Keywords

Hafnium zirconium oxide Coplanar structure Antiferroelectric field-effect transistor Reservoir computing Multifunctionality
Shi, Yufei, Zijie Zheng, Jiali Huo, Yu‑Chieh Chien, Sifan Li, Haofei Zheng, Xiao Gong, and Kah‑Wee Ang. 2026. “Coplanar Floating-Gate Antiferroelectric Transistor With Multifunctionality for All-in-One Analog Reservoir Computing”. Nano-Micro Letters 18 (January):202. https://doi.org/10.1007/s40820-025-02049-9.
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