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Vol. 10 No. 4 (2018)

Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI3 Perovskite Nanorods Bilayer Structure

https://doi.org/10.1007/s40820-018-0210-8
Yantao Chen
Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, Shanghai 201804, People’s Republic of China
Xiaohan Wu
Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, Shanghai 201804, People’s Republic of China
Yingli Chu
Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, Shanghai 201804, People’s Republic of China
Jiachen Zhou
Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, Shanghai 201804, People’s Republic of China
Bilei Zhou
Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, Shanghai 201804, People’s Republic of China
Jia Huang
Key Laboratory of Road and Traffic Engineering of Ministry of Education, Tongji University, Shanghai 201804, People’s Republic of China

Corresponding Author: Jia Huang

huangjia@tongji.edu.cn

Nano-Micro Letters, Vol. 10 No. 4 (2018), Article Number: 57

Abstract

The outstanding performances of nanostructured all-inorganic CsPbX3 (X = I, Br, Cl) perovskites in optoelectronic applications can be attributed to their unique combination of a suitable bandgap, high absorption coefficient, and long carrier lifetime, which are desirable for photodetectors. However, the photosensing performances of the CsPbI3 nanomaterials are limited by their low charge-transport efficiency. In this study, a phototransistor with a bilayer structure of an organic semiconductor layer of 2,7-dioctyl [1] benzothieno[3,2-b] [1] benzothiophene and CsPbI3 nanorod layer was fabricated. The high-quality CsPbI3 nanorod layer obtained using a simple dip-coating method provided decent transistor performance of the hybrid transistor device. The perovskite layer efficiently absorbs light, while the organic semiconductor layer acts as a transport channel for injected photogenerated carriers and provides gate modulation. The hybrid phototransistor exhibits high performance owing to the synergistic function of the photogating effect and field effect in the transistor, with a photoresponsivity as high as 4300 A W−1, ultra-high photosensitivity of 2.2 × 106, and excellent stability over 1 month. This study provides a strategy to combine the advantages of perovskite nanorods and organic semiconductors in fabrication of high-performance photodetectors.


Highlights:


1 A high-performance phototransistor with an organic semiconductor and CsPbI3 perovskite nanorod hybrid structure was fabricated and characterized.
2 The perovskite layer efficiently absorbs the input illumination, while the organic semiconductor layer acts as a transport channel for injected photogenerated carriers and provides gate tuning.
3 The hybrid phototransistor exhibits high performance with a photoresponsivity as high as 4300 A W−1, ultra-high photosensitivity of 2.2 × 106, and long-term stability of 1 month.

Keywords

Perovskite Phototransistor Nanorod Organic semiconductor Photogating effect
Chen, Yantao, Xiaohan Wu, Yingli Chu, Jiachen Zhou, Bilei Zhou, and Jia Huang. 2018. “Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI3 Perovskite Nanorods Bilayer Structure”. Nano-Micro Letters 10 (4):57. https://doi.org/10.1007/s40820-018-0210-8.
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