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Vol. 2 No. 4 (2010)

White Organic Light Emitting Devices Based on Multiple Emissive Nanolayers

https://doi.org/10.1007/BF03353850
M. V. Madhava Rao
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, ROC
Yan Kuin Su
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, ROC
T. S. Huang
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, ROC
Yi-Chun Chen
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, ROC

Corresponding Author: M. V. Madhava Rao

madhavmora@yahoo.com

Nano-Micro Letters, Vol. 2 No. 4 (2010), Article Number: 242-246

Abstract

In this paper, a white organic light-emitting device (WOLEDs) with multiple-emissive-layer structure has been fabricated. The device has a simple structure of indium tin oxide (ITO)/NPB (20 nm)//DPVBi(20 nm)/CDBP:xIr(btp)2acac(10 nm)/Alq3 (25 nm)/BCP (5 nm)/CsF (1 nm)/Al (150 nm) (x= 0.15, 2.5 and 3.0 wt%), where NPB and BCP are used as the hole-injecting layer, electron transporting and hole blocking layer, respectively. White light emission was realized in an OLED with 2.5% Ir(btp)2acac doping concentration. The device exhibits peak efficiency of 1.93 cd/A at 9 V and maximum brightness of 7005 cd/m2 at 14 V. The Commission International de I’Eclairage (CIE)(1931) coordinates of white emission are well within the white zone, which moves from (0.35,0.33) to (0.26,0.30) when the applied voltage is varied from 5 V to 14 V.

Keywords

Multilayer structure Organic light-emitting device White emission
Rao, M. V. Madhava, Yan Kuin Su, T. S. Huang, and Yi-Chun Chen. 2010. “White Organic Light Emitting Devices Based on Multiple Emissive Nanolayers”. Nano-Micro Letters 2 (4):242-46. https://doi.org/10.1007/BF03353850.
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References
  1. C. W. Tang and S. A. Vanslyke, Appl. Phys. Lett. 51, 913 (1987). doi:10.1063/1.98799
  2. C. Adachi, T. Tsutsui and S. Saito, Appl. Phys. Lett. 55, 1489 (1989). doi:10.1063/1.101586
  3. X. Mo, T. Mizokuro, C. Heck, N. Tanigaki and T. Hiraga, Nano-Micro Lett. 1, 19 (2009).
  4. M. V. Madhava Rao, T. S. Huang, Y. Su, M. Tu, C. Huang and S. Wu, Nano-Micro Lett. 2, 49 (2010).
  5. M. V. Madhava Rao, Y. Su, T. S. Huang, M. Tu, S. Wu and C. Huang, J. Electrochem. Soc. 157, H 832 (2010).
  6. M. A. Baldo, D. F. O’Brien, Y. You, A. Shoustikov, S. Sibley, M. E. Thompson and S. R. Forrest, Nature 395, 151 (1998). doi:10.1038/25954
  7. B. W. D’Andrade and S. R. Forrest, Adv. Mater. 16, 1585 (2004). doi:10.1002/adma.200400684
  8. R. S. Deshpande, V. Bulovic and S. R. Forrest, Appl. Phys. Lett. 75, 888 (1999). doi:10.1063/1.124250
  9. C. W. Tang, S. A. VanSlyke and C. H. Chen, J. Appl. Phys. 65, 3610 (1989). doi:10.1063/1.343409
  10. J. Shi and C. W. Tang, Appl. Phys. Lett. 70, 1665 (1997). doi:10.1063/1.118664
  11. C. H. Chuen and Y. T. Tao, Appl. Phys. Lett. 81, 4499 (2002). doi:10.1063/1.1528736
  12. S. Tokito and T. Iijima, Appl. Phys. Lett. 83, 2459 (2003). doi:10.1063/1.1611620
  13. R. H. Friend, R. W. Gymer, A. B. Holmes, J. H. Burroughes, R. N. Marks, C. Taliani, D. D. C. Bradley, D. A. Dos Santos, J. L. Brédas, M. Lögdlund and W. R. Salaneck, Nature 397, 121 (1999). doi:10.1038/16393
  14. J. Kido and Y. Lizumi, Appl. Phys. Lett. 73, 2721 (1998). doi:10.1063/1.122570
  15. F. Steuber, J. Staudigel, M. Stössel, J. Simmerer, A. Winnacker, H. Spreitzer, F. Weissörtel and J. Salbeck, Adv. Mater. 12, 130 (2000). doi:10.1002/(SICI)1521-4095(200001)12:2<130::AIDADMA130>3.0.CO;2-P
  16. M. Mazzeo, D. Pisignano, F. Della Sala, J. Thompson, R. I. R. Blyth, G. Gigli, R. Cingolani, G. Sotgiu and G. Barbarella, Appl. Phys. Lett. 82, 334 (2003). doi:10.1063/1.1531217
  17. F. Li, G. Cheng, Y. Zhao, J. Feng and S. Liu, Appl. Phys. Lett. 83, 4716 (2003). doi:10.1063/1.1632545
  18. G. W. Kang, Y. J. Ahn, J. T. Lim and C. H. Lee, Synth. Met. 137, 1029 (2003). doi:10.1016/S0379-6779(02)00889-5
  19. C. H. Kim and J. Shinar, Appl. Phys. Lett. 80, 2201 (2002). doi:10.1063/1.1464223
  20. T. Tsuji, S. Naka, H. Okada and H. Onnagawa, Appl. Phys. Lett. 81, 3329 (2002). doi:10.1063/1.1516629
  21. S. A. VanSlyke, C. H. Chen and C. W. Tang, Appl. Phys. Lett. 69, 2160 (1996). doi:10.1063/1.117151
  22. B. W. D’Andrage, J. Brooks, V. Adamovich, M. E. Thompson and S. R. Forrest, Adv. Mater. 14, 1031 (2002).
  23. Y. S. Huang and J. H. Jou, Appl. Phys. Lett. 80, 2782 (2002). doi:10.1063/1.1413220
  24. Y. Z. Wang, R. G. Sun, F. Meghdadi, G. Leising and A. J. Epstei, Appl. Phys. Lett. 74, 3313 (1999).
  25. C. H. Kim and J. Shinar, Appl. Phys. Lett. 80, 2201 (2002). doi:10.1063/1.1464223
  26. K. O. Cheon and J. Shinar, Appl. Phys. Lett. 81, 1738 (2002). doi:10.1063/1.1498500
  27. G. Lei, L. Wang and Y. Qiu, Appl. Phys. Lett. 88, 103508 (2006). doi:10.1063/1.2185255
  28. X. M. Yu, H. S. Kwok, W. Y. Wong and G. J. Zhou, Chem. Mater. 18, 5097 (2006). doi:10.1021/cm061030p
  29. Y. Shao and Y. Yang, Appl. Phys. Lett. 86, 073510 (2005). doi:10.1063/1.1866216
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