The electrical switching characteristics of single copper tetra-cyanoquinodimethane nanowire
Corresponding Author: G. R. Chen
Nano-Micro Letters,
Vol. 1 No. 1 (2009), Article Number: 23-26
Abstract
In this paper, method combined vapor transportation with in-situ chemical reaction is employed to synthesize Cu(TCNQ) nanowires. The typical diameter of nanowires is 50–500 nm with high uniformity. The electrical switching characteristics of single nanowire are observed. The ON-OFF resistance ratio for switching reaches 104. The investigation reveals a linear relationship between the switching threshold and the spacing between the two electrodes. The temporal response of the switching process is 30 ns and the switch exhibits good reproducibility. The collapse of the nanowire under the condition of current surge is also discussed. It is believed that the Cu(TCNQ) nanowire could be promising for applications in nanoelectronics.
Keywords
Download Citation
Endnote/Zotero/Mendeley (RIS)BibTeX
- R. S. Potember, T. O. Poehler and D. O. Cowan, Appl. Phys. Lett. 34, 405 (1979). doi:10.1063/1.90814
- Y. Iwasa, T. Koda, Y. Tokura, S. Koshihara, N. Iwasawa and G. Saito, Appl. Phys. Lett. 55, 2111 (1989).
- R. Kumai, Y. Okimoto and Y. Tokura, Science 284, 1645 (1999). doi:10.1126/science.284.5420.1645
- N. Watanabe, Y. Iwasa and T. Koda, Phys. Rev. B 44, 11111 (1991). doi:10.1103/PhysRevB.44.11111
- Z. Y. Hua and G. R. Chen, Vaccum 43, 1019 (1992).
- X. L. Mo, G. R. Chen, Q. J. Cai, Z.Y. Fan, H. H. Xu, Y. Yao, J. Yang, H. H. Gu and Z. Y. Hua, Thin solid films, 436, 259 (2003). doi:10.1016/S0040-6090(03)00593-5
- P. O. Anthony, F. Nigel, N. Ayman and M. B. Alan, J. Am. Chem. Soc. 129, 2066 (2007). doi:10.1021/ja066874o
- Y. L. Liu, Z. Y. Ji, Q. X. Tang, L. Jiang, H. X. Li, M. He, W. P. Hu, D. Q. Zhang, L. Jiang, W. K. Wang, C. Wang, Y. Q. Liu and D. B. Zhu, Adv. Mater. 17, 2953 (2005). doi:10.1002/adma.200500809
- Y. L. Liu, H. W. Li, D. Y. Tu, Z. Y. Ji, C. S. Wang, Q. X. Tang, M. Liu, W. P. Hu, Y. Q. Liu and D. B. Zhu, J. Am. Chem. Soc. 128, 12917 (2006). doi:10.1021/ja0636183
- K. Xiao, I. N. Ivanov, A. A. Puretzky, Z. Liu and D. B. Geohegan, Adv. Mater. 18, 2184 (2006). doi:10.1002/adma.200600621
- R. Muller, J. Genoe and P. Heremans, Appl. Phys. Lett. 88, 242105 (2006). doi:10.1063/1.2213971
- G. R. Chen and X. L. Mo, Chinese patent (State intellectual properties office of P.R.C), 02151236.1 (2002)
- C. N. Ye, G. Y. Cao, F. Fang, H. H. Xu, X. Y. Xing, D. L. Sun and G. R. Chen, Micron 36, 461 (2005).
- P. G. Gucciardi, S. Trusso, C. Vasi, Patane and M. Allegrin, Phys. Chem. Chem. Phys. 4, 2747 (2002).
- R. S. Potember, T. O. Poehler and R. C. Benson, Appl. Phys. Lett. 41, 548 (1982). doi:10.1063/1.93591
- R. A. Heinta, H. Zhao, X. Wuyang, G. Grandinetti, J. Cowen and K. R. Dunbar, Inorg. Chem. 38, 144 (1999).
- X. G. Wan, J. Li, D. Y. Chen, Y. M. Jiang and Z. Y. Hua, Phys. Stat. Sol. (a) 181, R13 (2000).
References
R. S. Potember, T. O. Poehler and D. O. Cowan, Appl. Phys. Lett. 34, 405 (1979). doi:10.1063/1.90814
Y. Iwasa, T. Koda, Y. Tokura, S. Koshihara, N. Iwasawa and G. Saito, Appl. Phys. Lett. 55, 2111 (1989).
R. Kumai, Y. Okimoto and Y. Tokura, Science 284, 1645 (1999). doi:10.1126/science.284.5420.1645
N. Watanabe, Y. Iwasa and T. Koda, Phys. Rev. B 44, 11111 (1991). doi:10.1103/PhysRevB.44.11111
Z. Y. Hua and G. R. Chen, Vaccum 43, 1019 (1992).
X. L. Mo, G. R. Chen, Q. J. Cai, Z.Y. Fan, H. H. Xu, Y. Yao, J. Yang, H. H. Gu and Z. Y. Hua, Thin solid films, 436, 259 (2003). doi:10.1016/S0040-6090(03)00593-5
P. O. Anthony, F. Nigel, N. Ayman and M. B. Alan, J. Am. Chem. Soc. 129, 2066 (2007). doi:10.1021/ja066874o
Y. L. Liu, Z. Y. Ji, Q. X. Tang, L. Jiang, H. X. Li, M. He, W. P. Hu, D. Q. Zhang, L. Jiang, W. K. Wang, C. Wang, Y. Q. Liu and D. B. Zhu, Adv. Mater. 17, 2953 (2005). doi:10.1002/adma.200500809
Y. L. Liu, H. W. Li, D. Y. Tu, Z. Y. Ji, C. S. Wang, Q. X. Tang, M. Liu, W. P. Hu, Y. Q. Liu and D. B. Zhu, J. Am. Chem. Soc. 128, 12917 (2006). doi:10.1021/ja0636183
K. Xiao, I. N. Ivanov, A. A. Puretzky, Z. Liu and D. B. Geohegan, Adv. Mater. 18, 2184 (2006). doi:10.1002/adma.200600621
R. Muller, J. Genoe and P. Heremans, Appl. Phys. Lett. 88, 242105 (2006). doi:10.1063/1.2213971
G. R. Chen and X. L. Mo, Chinese patent (State intellectual properties office of P.R.C), 02151236.1 (2002)
C. N. Ye, G. Y. Cao, F. Fang, H. H. Xu, X. Y. Xing, D. L. Sun and G. R. Chen, Micron 36, 461 (2005).
P. G. Gucciardi, S. Trusso, C. Vasi, Patane and M. Allegrin, Phys. Chem. Chem. Phys. 4, 2747 (2002).
R. S. Potember, T. O. Poehler and R. C. Benson, Appl. Phys. Lett. 41, 548 (1982). doi:10.1063/1.93591
R. A. Heinta, H. Zhao, X. Wuyang, G. Grandinetti, J. Cowen and K. R. Dunbar, Inorg. Chem. 38, 144 (1999).
X. G. Wan, J. Li, D. Y. Chen, Y. M. Jiang and Z. Y. Hua, Phys. Stat. Sol. (a) 181, R13 (2000).