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Vol. 14 (2022)

Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

https://doi.org/10.1007/s40820-022-00852-2
Peng Yang
College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, People’s Republic of China
Jiajia Zha
Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, People’s Republic of China
Guoyun Gao
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong SAR, People’s Republic of China
Long Zheng
Department of Chemistry, The Chinese University of Hong Kong, Hong Kong SAR, People’s Republic of China
Haoxin Huang
Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, People’s Republic of China
Yunpeng Xia
Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, People’s Republic of China
Songcen Xu
Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, People’s Republic of China
Tengfei Xiong
Department of Chemistry, City University of Hong Kong, Hong Kong SAR, People’s Republic of China
Zhuomin Zhang
Department of Mechanical Engineering, City University of Hong Kong, Hong Kong SAR, People’s Republic of China
Zhengbao Yang
Department of Mechanical Engineering, City University of Hong Kong, Hong Kong SAR, People’s Republic of China
Ye Chen
Department of Chemistry, The Chinese University of Hong Kong, Hong Kong SAR, People’s Republic of China
Dong‑Keun Ki
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong SAR, People’s Republic of China
Juin J. Liou
College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, People’s Republic of China
Wugang Liao
College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, People’s Republic of China
Chaoliang Tan
Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, People’s Republic of China

Corresponding Author: Chaoliang Tan

chaoltan@cityu.edu.hk

Nano-Micro Letters, Vol. 14 (2022), Article Number: 109

Abstract

The lack of stable p-type van der Waals (vdW) semiconductors with high hole mobility severely impedes the step of low-dimensional materials entering the industrial circle. Although p-type black phosphorus (bP) and tellurium (Te) have shown promising hole mobilities, the instability under ambient conditions of bP and relatively low hole mobility of Te remain as daunting issues. Here we report the growth of high-quality Te nanobelts on atomically flat hexagonal boron nitride (h-BN) for high-performance p-type field-effect transistors (FETs). Importantly, the Te-based FET exhibits an ultrahigh hole mobility up to 1370 cm2 V−1 s−1 at room temperature, that may lay the foundation for the future high-performance p-type 2D FET and metal–oxide–semiconductor (p-MOS) inverter. The vdW h-BN dielectric substrate not only provides an ultra-flat surface without dangling bonds for growth of high-quality Te nanobelts, but also reduces the scattering centers at the interface between the channel material and the dielectric layer, thus resulting in the ultrahigh hole mobility.


Highlights:


1 The growth of high-quality single-crystalline Te nanobelts is reported by introducing atomically flat hexagonal boron nitride (h-BN) nanoflakes into the chemical vapor deposition system as the growth substrate.
2 The field-effect transistor based on Te grown on h-BN exhibits an ultrahigh hole mobility up to 1370 cm2 V−1 s−1 at room temperature.

Keywords

Chemical vapor deposition Substrate engineering Tellurium Field-effect transistors Hole mobility
Yang, Peng, Jiajia Zha, Guoyun Gao, Long Zheng, Haoxin Huang, Yunpeng Xia, Songcen Xu, Tengfei Xiong, Zhuomin Zhang, Zhengbao Yang, Ye Chen, Dong‑Keun Ki, Juin J. Liou, Wugang Liao, and Chaoliang Tan. 2022. “Growth of Tellurium Nanobelts on H-BN for P-Type Transistors With Ultrahigh Hole Mobility”. Nano-Micro Letters 14 (April):109. https://doi.org/10.1007/s40820-022-00852-2.
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