Issue

Vol. 12 (2020)

Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical Properties

https://doi.org/10.1007/s40820-020-00493-3
Yixiu Wang
School of Industrial Engineering, Purdue University, West Lafayette, IN 47907, USA
Shengyu Jin
School of Industrial Engineering, Purdue University, West Lafayette, IN 47907, USA
Qingxiao Wang
Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA
Min Wu
School of Industrial Engineering, Purdue University, West Lafayette, IN 47907, USA
Shukai Yao
School of Materials Engineering, Purdue University, West Lafayette, IN 47907, USA
Peilin Liao
School of Materials Engineering, Purdue University, West Lafayette, IN 47907, USA
Moon J. Kim
Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA
Gary J. Cheng
School of Industrial Engineering, Purdue University, West Lafayette, IN 47907, USA
Wenzhuo Wu
School of Industrial Engineering, Purdue University, West Lafayette, IN 47907, USA

Corresponding Author: Wenzhuo Wu

wenzhuowu@purdue.edu

Nano-Micro Letters, Vol. 12 (2020), Article Number: 160

Abstract

The low-dimensional, highly anisotropic geometries, and superior mechanical properties of one-dimensional (1D) nanomaterials allow the exquisite strain engineering with a broad tunability inaccessible to bulk or thin-film materials. Such capability enables unprecedented possibilities for probing intriguing physics and materials science in the 1D limit. Among the techniques for introducing controlled strains in 1D materials, nanoimprinting with embossed substrates attracts increased attention due to its capability to parallelly form nanomaterials into wrinkled structures with controlled periodicities, amplitudes, orientations at large scale with nanoscale resolutions. Here, we systematically investigated the strain-engineered anisotropic optical properties in Te nanowires through introducing a controlled strain field using a resist-free thermally assisted nanoimprinting process. The magnitude of induced strains can be tuned by adjusting the imprinting pressure, the nanowire diameter, and the patterns on the substrates. The observed Raman spectra from the chiral-chain lattice of 1D Te reveal the strong lattice vibration response under the strain. Our results suggest the potential of 1D Te as a promising candidate for flexible electronics, deformable optoelectronics, and wearable sensors. The experimental platform can also enable the exquisite mechanical control in other nanomaterials using substrate-induced, on-demand, and controlled strains.


Highlights:


1 Exquisite strain engineering in 1D chiral semiconductor.
2 Facile nanoimprinting induced tensile strain in Te nanowire.
3 Intriguing and tunable optical properties of 1D Te nanowire by strain engineering.

Keywords

Chiral semiconductor Nanowires Nanoimprinting Strain engineering Optical property
Wang, Yixiu, Shengyu Jin, Qingxiao Wang, Min Wu, Shukai Yao, Peilin Liao, Moon J. Kim, Gary J. Cheng, and Wenzhuo Wu. 2020. “Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical Properties”. Nano-Micro Letters 12 (August):160. https://doi.org/10.1007/s40820-020-00493-3.
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