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Vol. 17 (2025)

Metal–Support Interaction Induced Electron Localization in Rationally Designed Metal Sites Anchored MXene Enables Boosted Electromagnetic Wave Attenuation

https://doi.org/10.1007/s40820-025-01819-9
Xiao Wang
Shanghai Key Lab of D&A for Metal‑Functional Materials, School of Materials Science and Engineering, Tongji University, Shanghai 201804, People’s Republic of China
Gaolei Dong
College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, People’s Republic of China
Fei Pan
Shanghai Key Lab of D&A for Metal‑Functional Materials, School of Materials Science and Engineering, Tongji University, Shanghai 201804, People’s Republic of China
Cong Lin
College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, People’s Republic of China
Bin Yuan
Shanghai Key Lab of D&A for Metal‑Functional Materials, School of Materials Science and Engineering, Tongji University, Shanghai 201804, People’s Republic of China
Yang Yang
Shanghai Key Lab of D&A for Metal‑Functional Materials, School of Materials Science and Engineering, Tongji University, Shanghai 201804, People’s Republic of China
Wei Lu
Shanghai Key Lab of D&A for Metal‑Functional Materials, School of Materials Science and Engineering, Tongji University, Shanghai 201804, People’s Republic of China

Corresponding Author: Wei Lu

weilu@tongji.edu.cn

Nano-Micro Letters, Vol. 17 (2025), Article Number: 309

Abstract

The electron localization is considered as a promising approach to optimize electromagnetic waves (EMW) dissipation. However, it is still difficult to realize well-controlled electron localization and elucidate the related EMW loss mechanisms for current researches. In this study, a novel two-dimensional MXene (Ti3C2Tx) nanosheet decorated with Ni nanoclusters (Ni-NC) system to construct an effective electron localization model based on electronic orbital structure is explored. Theoretical simulations and experimental results reveal that the metal–support interaction between Ni-NC and MXene disrupts symmetric electronic environments, leading to enhanced electron localization and dipole polarization. Additionally, Ni-NC generate a strong interfacial electric field, strengthening heterointerface interactions and promoting interfacial polarization. As a result, the optimized material achieves an exceptional reflection loss (RLmin) of − 54 dB and a broad effective absorption bandwidth of 6.8 GHz. This study offers critical insights into the in-depth relationship between electron localization and EMW dissipation, providing a pathway for electron localization engineering in functional materials such as semiconductors, spintronics, and catalysis.


Highlights:
1 It is found that the reconstruction of the electronic environment and the optimization of the electromagnetic attenuation mechanism are achieved by constructing a model of metal–support interaction regulated electron localization.
2 An excellent RLmin of − 54 dB and an ultra-wide effective absorption bandwidth of 6.8 GHz are obtained in the 2D MXene system.
3 The microscopic pathway of “local field-driven carrier migration → interfacial electron rearrangement → dipole polarization enhancement” has been elucidated.

Keywords

Electron localization Ti3C2Tx-MXene Microwave absorption Metal–support interaction
Wang, Xiao, Gaolei Dong, Fei Pan, Cong Lin, Bin Yuan, Yang Yang, and Wei Lu. 2025. “Metal–Support Interaction Induced Electron Localization in Rationally Designed Metal Sites Anchored MXene Enables Boosted Electromagnetic Wave Attenuation”. Nano-Micro Letters 17 (June):309. https://doi.org/10.1007/s40820-025-01819-9.
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