Issue

Vol. 7 No. 2 (2015)

Novel Evolution Process of Zn-Induced Nanoclusters on Si(111)-(7×7) Surface

https://doi.org/10.1007/s40820-015-0036-6
Changjie Zhou
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, People’s Republic of China
Yaping Wu
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, People’s Republic of China
Xiaohang Chen
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, People’s Republic of China
Wei Lin
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, People’s Republic of China
Yinhui Zhou
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, People’s Republic of China
Junyong Kang
Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, People’s Republic of China
Huili Zhu
Department of Physics, School of Science, Jimei University, Xiamen 361021, People’s Republic of China

Corresponding Author: Junyong Kang

jykang@xmu.edu.cn

Nano-Micro Letters, Vol. 7 No. 2 (2015), Article Number: 194-202

Abstract

A tiny number of Zn atoms were deposited on Si(111)-(7×7) surface to study the evolution process of Zn-induced nanoclusters. After the deposition, three types (type I, II, and III) of Zn-induced nanoclusters were observed to occupy preferably in the faulted half-unit cells. These Zn-induced nanoclusters are found to be related to one, two, and three displaced Si edge adatoms, and simultaneously cause the depression of one, two, and three closest Si edge adatoms in the neighboring unfaulted half-unit cells at negative voltages, respectively. First-principles adsorption energy calculations show that the observed type I, II, and III nanoclusters can reasonably be assigned as the Zn3Si1, Zn5Si2, and Zn7Si3 clusters, respectively. And Zn3Si1, Zn5Si2, and Zn7Si3 clusters are, respectively, the most stable structures in cases of one, two, and three displaced Si edge adatoms. Based on the above energy-preferred models, the simulated bias-dependent STM images are all well consistent with the experimental observations. Therefore, the most stable Zn7Si3 nanoclusters adsorbed on the Si(111)-(7×7) surface should grow up on the base of Zn3Si1 and Zn5Si2 clusters. A novel evolution process from Zn3Si1 to Zn5Si2, and finally to Zn7Si3 nanocluster is unveiled.

Keywords

Nanoclusters Silicon Scanning tunneling microscopy First-principles calculations
Zhou, Changjie, Yaping Wu, Xiaohang Chen, Wei Lin, Yinhui Zhou, Junyong Kang, and Huili Zhu. 2015. “Novel Evolution Process of Zn-Induced Nanoclusters on Si(111)-(7×7) Surface”. Nano-Micro Letters 7 (2):194-202. https://doi.org/10.1007/s40820-015-0036-6.
Download Citation
Endnote/Zotero/Mendeley (RIS)
BibTeX
References
  1. W.J. Cho, Y. Kim, J.K. Kim, Ultrahigh-density array of silver nanoclusters for SERS substrate with high sensitivity and excellent reproducibility. ACS Nano 6(1), 249–255 (2012). doi:10.1021/nn2035236
  2. S.F. Li, X.J. Zhao, X.S. Xu, Y.F. Gao, Z.Y. Zhang, Stacking principle and magic sizes of transition metal nanoclusters based on generalized Wulff construction. Phys. Rev. Lett. 111(11), 115501 (2013). doi:10.1103/PhysRevLett.111.115501
  3. M.C. Patterson, B.F. Habenicht, R.L. Kurtz, L. Liu, Y. Xu, P.T. Sprunger, Formation and stability of dense arrays of Au nanoclusters on hexagonal boron nitride/Rh(111). Phys. Rev. B 89(20), 205423 (2014). doi:10.1103/PhysRevB.89.205423
  4. J. Pal, M. Smerieri, E. Celasco, L. Savio, L. Vattuone, M. Rocca, Morphology of monolayer MgO films on Ag(100): switching from corrugated islands to extended flat terraces. Phys. Rev. Lett. 112(12), 126102 (2014). doi:10.1103/PhysRevLett.112.126102
  5. A.O. Orlov, I. Amlani, G.H. Bernstein, C.S. Lent, G.L. Snider, Realization of a functional cell for quantum-dot cellular automata. Science 277(5328), 928–930 (1997). doi:10.1126/science.277.5328.928
  6. R.P. Andres, T. Bein, M. Dorogi, S. Feng, J.I. Henderson, C.P. Kubiak, W. Mahoney, R.G. Osifchin, R. Reifenberger, “Coulomb staircase” at room temperature in a self-assembled molecular nanostructure. Science 272(5266), 1323–1325 (1996). doi:10.1126/science.272.5266.1323
  7. T.W. Kim, D.C. Choo, J.H. Shim, S.O. Kang, Single-electron transistors operating at room temperature, fabricated utilizing nanocrystals created by focused-ion beam. Appl. Phys. Lett. 80(12), 2168–2170 (2002). doi:10.1063/1.1458685
  8. S.H. Sun, C.B. Murray, D. Weller, L. Folks, A. Moser, Monodisperse FePt nanoparticles and ferromagnetic FePt nanocrystal superlattices. Science 287(5460), 1989–1992 (2000). doi:10.1126/science.287.5460.1989
  9. K. Koike, H. Matsuyama, Y. Hirayama, K. Tanahashi, T. Kanemura, O. Kitakami, Y. Shimada, Magnetic block array for patterned magnetic media. Appl. Phys. Lett. 78(6), 784–786 (2001). doi:10.1063/1.1345804
  10. T. Koide, H. Miyauchi, J. Okamoto, T. Shidara, A. Fujimori, H. Fukutani, K. Amemiya, H. Rakeshita, S. Yuasa, T. Katayama, Y. Suzuki, Direct determination of interfacial magnetic moments with a magnetic phase transition in Co nanoclusters on Au(111). Phys. Rev. Lett. 87(25), 257201 (2001). doi:10.1103/PhysRevLett.87.257201
  11. K.H. Wu, Y. Fujikawa, T. Nagao, Y. Hasegawa, K.S. Nakayama, Q.K. Xue, E.G. Wang, T. Briere, V. Kumar, Y. Kawazoe, S.B. Zhang, T. Sakurai, Na adsorption on the Si(111)-(7×7) surface: from two-dimensional gas to nanocluster array. Phys. Rev. Lett. 91(12), 126101 (2003). doi:10.1103/PhysRevLett.91.126101
  12. J.R. Ahn, G.J. Yoo, J.T. Seo, J.H. Byun, H.W. Yeom, Electronic states of two-dimensional adatom gas and nanocluster array: Na on Si(111)7×7. Phys. Rev. B 72(11), 113309 (2005). doi:10.1103/PhysRevB.72.113309
  13. Y.P. Wu, Y.H. Zhou, C.J. Zhou, H.H. Zhan, J.Y. Kang, Atomic structure and formation mechanism of identically sized Au clusters grown on Si(111)-7×7 surface. J. Chem. Phys. 133(12), 124706 (2010). doi:10.1063/1.3481483
  14. C.J. Zhou, Q.K. Xue, J.F. Jia, H.H. Zhan, J.Y. Kang, Structural and electronic properties of identical-sized Zn nanoclusters grown on Si(111)-(7×7) surfaces. J. Chem. Phys. 130(2), 024701 (2009). doi:10.1063/1.3046682
  15. J.F. Jia, J.Z. Wang, X. Liu, Q.K. Xue, Z.Q. Li, Y. Kawazoe, S.B. Zhang, Artificial nanocluster crystal: lattice of indentical Al clusters. Appl. Phys. Lett. 80(17), 3186–3188 (2002). doi:10.1063/1.1474620
  16. R.W. Li, J.H.G. Owen, S. Kusano, K. Miki, Dynamic behavior and phase transition of magic Al clusters on Si(111)-7×7 surfaces. Appl. Phys. Lett. 89(7), 073116 (2006). doi:10.1063/1.2337522
  17. V.G. Kotlyar, A.V. Zotov, A.A. Saranin, T.V. Kasyanova, M.A. Cherevik, I.V. Pisarenko, V.G. Lifshits, Formation of the ordered arrays of Al magic clusters on Si(111)7×7. Phys. Rev. B 66(16), 165401 (2002). doi:10.1103/PhysRevB.66.165401
  18. M.Y. Lai, Y.L. Wang, Self-organized two-dimensional lattice of magic clusters. Phys. Rev. B 64(24), 241404 (2001). doi:10.1103/PhysRevB.64.241404
  19. L. Vitali, M.G. Ramsey, F.P. Netzer, Nanodot formation on the Si(111)-(7×7) surface by adatom trapping. Phys. Rev. Lett. 83(2), 316–319 (1999). doi:10.1103/PhysRevLett.83.316
  20. J.L. Li, J.F. Jia, X.J. Liang, X. Liu, J.Z. Wang, Q.K. Xue, Z.Q. Li, J.S. Tse, Z.Y. Zhang, S.B. Zhang, Spontaneous assembly of perfectly ordered identical-size nanocluster arrays. Phys. Rev. Lett. 88(6), 066101 (2002). doi:10.1103/PhysRevLett.88.066101
  21. S.C. Li, J.F. Jia, R.F. Dou, Q.K. Xue, I.G. Batyrev, S.B. Zhang, Borderline magic clustering: the fabrication of tetravalent Pb cluster arrays on Si(111)-(7×7) surfaces. Phys. Rev. Lett. 93(11), 116103 (2004). doi:10.1103/PhysRevLett.93.116103
  22. M.A.K. Zilani, H. Xu, T. Liu, Y.Y. Sun, Y.P. Feng, X.S. Wang, A.T.S. Wee, Electronic structure of Co-induced magic clusters grown on Si(111)-(7×7): scanning tunneling microscopy and spectroscopy and real-space multiple-scattering calculations. Phys. Rev. B 73(19), 195415 (2006). doi:10.1103/PhysRevB.73.195415
  23. M.A.K. Zilani, Y.Y. Sun, H. Xu, L. Liu, Y.P. Feng, X.S. Wang, A.T.S. Wee, Reactive Co magic cluster formation on Si(111)-(7×7). Phys. Rev. B 72(19), 193402 (2005). doi:10.1103/PhysRevB.72.193402
  24. J. Alvarez, A.L.V. Deparga, J.J. Hinarejos, J. Delafiguera, E.G. Michel, C. Ocal, R. Miranda, Initial stages of the growth of Fe on Si(111)7×7. Phys. Rev. B 47(23), 16048–16051 (1993). doi:10.1103/PhysRevB.47.16048
  25. M.K.J. Johansson, S.M. Gray, L.S.O. Johansson, Studies of low coverage adsorption of Li on Si(001): observation of negative differential resistance and electron trapping. J. Vac. Sci. Technol., B 14(2), 1015–1018 (1996). doi:10.1116/1.588445
  26. N.P. Guisinger, M.E. Greene, R. Basu, A.S. Baluch, M.C. Hersam, Room temperature negative differential resistance through individual organic molecules on silicon surfaces. Nano Lett. 4(1), 55–59 (2004). doi:10.1021/nl0348589
  27. J.P. Perdew, J.A. Chevary, S.H. Vosko, K.A. Jackson, M.R. Pederson, D.J. Singh, C. Fiolhais, Atoms, molecules, solids, and surfaces: applications of the generalized gradient approximation for exchange and correlation. Phys. Rev. B 46(11), 6671–6687 (1992). doi:10.1103/PhysRevB.46.6671
  28. Y. Wang, J.P. Perdew, Correlation hole of the spin-polarized electron gas, with exact small-wave-vector and high-density scaling. Phys. Rev. B 44(24), 13298–13307 (1991). doi:10.1103/PhysRevB.44.13298
  29. G. Kresse, D. Joubert, From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 59(3), 1758–1775 (1999). doi:10.1103/PhysRevB.59.1758
  30. G. Kresse, J. Furthmüller, Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54(16), 11169–11186 (1996). doi:10.1103/PhysRevB.54.11169
  31. G. Kresse, J. Furthmüller, Efficiency of ab initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 6(1), 15–50 (1996). doi:10.1016/0927-0256(96)00008-0
  32. M.C. Payne, M.P. Teter, D.C. Allan, T.A. Arias, J.D. Joannopoulos, Iterative minimization techniques for ab initio total-energy calculations: molecular dynamics and conjugate gradients. Rev. Mod. Phys. 64(4), 1045–1097 (1992). doi:10.1103/RevModPhys.64.1045
  33. K. Takayanagi, Y. Tanishiro, M. Takahashi, S. Takahashi, Structural analysis of Si(111)-7×7 by UHV-transmission electron diffraction and microscopy. J. Vac. Sci. Technol., A 3(3), 1502–1506 (1985). doi:10.1116/1.573160
  34. G. Lee, C.G. Hwang, N.D. Kim, J. Chung, J.S. Kim, S. Lee, Ab initio study of thallium nanoclusters on Si(111)-7×7. Phys. Rev. B 76(24), 245409 (2007). doi:10.1103/PhysRevB.76.245409
  35. J. Tersoff, D.R. Hamann, Theory of the scanning tunneling microscope. Phys. Rev. B 31(2), 805–813 (1985). doi:10.1103/PhysRevB.31.805
Read More
Author biographies are not available.
Download this PDF file
PDF
Statistic
Read Counter : 1582 Download : 1204

Most read articles by the same author(s)