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Vol. 8 No. 3 (2016)

High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires

https://doi.org/10.1007/s40820-016-0083-7
Zhi Tao
School of Electronic Science and Engineering, Southeast University, Nanjing 210096, People’s Republic of China
Yi-an Huang
School of Information and Communication Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, People’s Republic of China
Xiang Liu
School of Electronic Science and Engineering, Southeast University, Nanjing 210096, People’s Republic of China
Jing Chen
School of Electronic Science and Engineering, Southeast University, Nanjing 210096, People’s Republic of China
Wei Lei
School of Electronic Science and Engineering, Southeast University, Nanjing 210096, People’s Republic of China
Xiaofeng Wang
Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, People’s Republic of China
Lingfeng Pan
Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, People’s Republic of China
Jiangyong Pan
School of Electronic Science and Engineering, Southeast University, Nanjing 210096, People’s Republic of China
Qianqian Huang
School of Electronic Science and Engineering, Southeast University, Nanjing 210096, People’s Republic of China
Zichen Zhang
State Key Laboratory of Precision Measurement Technology and Instruments, Collaborative Innovation Center for Micro/ Nano Fabrication, Device and System; Department of Precision Instrument, Tsinghua University, Beijing 100084, People’s Republic of China

Corresponding Author: Zichen Zhang

zz241@tsinghua.edu.cn

Nano-Micro Letters, Vol. 8 No. 3 (2016), Article Number: 247-253

Abstract

In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of CdSe quantum dots and reduced graphene oxide (RGO) fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 A W−1 and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. With these inherent properties, such as integrated circuit capability and wide optical sensitive waveband, the transistor will manifest great potential in the future applications in photodetectors.

Keywords

Thin-film transistor Quantum dots Reduced graphene oxide ZnO nanowires
Tao, Zhi, Yi-an Huang, Xiang Liu, Jing Chen, Wei Lei, Xiaofeng Wang, Lingfeng Pan, Jiangyong Pan, Qianqian Huang, and Zichen Zhang. 2016. “High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires”. Nano-Micro Letters 8 (3):247-53. https://doi.org/10.1007/s40820-016-0083-7.
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