Issue

Vol. 6 No. 1 (2014)

Advances in Conceptual Electronic Nanodevices based on 0D and 1D Nanomaterials

https://doi.org/10.1007/BF03353763
Yafei Zhang
Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai, China
Li Franklin Duan
Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai, China
Yaozhong Zhang
Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai, China
Jian Wang
Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai, China
Huijuan Geng
Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai, China
Qing Zhang
School of EEE Nanyang Technological University, Nanyang Technological University, Singapore

Corresponding Author: Qing Zhang

eqzhang@ntu.edu.sg

Nano-Micro Letters, Vol. 6 No. 1 (2014), Article Number: 1-19

Abstract

Nanoelectronic devices are being extensively developed in these years with a large variety of potential applications. In this article, some recent developments in nanoelectronic devices, including their principles, structures and potential applications are reviewed. As nanodevices work in nanometer dimensions, they consume much less power and function much faster than conventional microelectronic devices. Nanoelectronic devices can operate in different principles so that they can be further grouped into field emission devices, molecular devices, quantum devices, etc. Nanodevices can function as sensors, diodes, transistors, photovoltaic and light emitting devices, etc. Recent advances in both theoretical simulation and fabrication technologies expedite the development process from device design to prototype demonstration. Practical applications with a great market value from nanoelectronic devices are expected in near future.

Keywords

Field emission nanodevices Molecular nanodevices Quantum nanodevices Semiconductor nanodevices
Zhang, Yafei, Li Franklin Duan, Yaozhong Zhang, Jian Wang, Huijuan Geng, and Qing Zhang. 2013. “Advances in Conceptual Electronic Nanodevices Based on 0D and 1D Nanomaterials”. Nano-Micro Letters 6 (1):1-19. https://doi.org/10.1007/BF03353763.
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References
  1. Walt A. de Heer, A. Châtelain and D. Ugarte, “A carbon nanotube field-emission electron source”, Science 270(5239), 1179–1180 (1995). http://dx.doi.org/10.1126/science.270.5239.1179
  2. R. H. Baughman, A. A. Zakhidov and W. A. De Heer, “Carbon nanotubes-the route toward applications”, Science 297(5582), 787–792 (2002). http://dx.doi.org/10.1126/science.1060928
  3. A. A. Kuznetzov, S. B. Lee, M. Zhang, R. H. Baughman and A. A. Zakhidov, “Electron field emission from transparent multiwalled carbon nanotube sheets for inverted field emission displays”, Carbon 48(1), 41–46 (2010). http://dx.doi.org/10.1016/j.carbon.2009.08.009
  4. M. K. Shin, J. Oh, M. Lima, M. E. Kozlov, S. J. Kim and R. H. Baughman, “Elastomeric conductive composites based on carbon nanotube forests”, Adv. Mater. 22(24), 2663–2667 (2010). http://dx.doi.org/10.1002/adma.200904270
  5. M. Monti, M. Natali, R. Petrucci, J M. Kenny and L. Torre, “Impact damage sensing in glass fiber reinforced composites based on carbon nanotubes by electrical resistance measurements”, J. Appl. Polym. Sci. 122(4), 2829–2836 (2011). http://dx.doi.org/10.1002/app.34412
  6. A. Aviram and M. A. Ratner, “Molecular rectifiers”, Chem. Phys. Lett. 29(2), 277–283 (1974). http://dx.doi.org/10.1016/0009-2614(74)85031-1
  7. J. M. Tour, R. Wu and J. S. Schumm, “Approaches to orthogonally fused conducting polymers for molecular electronics”, J. Am. Chem. Soc. 112(14), 5662–5663 (1990). http://dx.doi.org/10.1021/ja00170a053
  8. J. M. Tour, L. Jones, D. L. Pearson, J. J. S. Lamba, T. P. Burgin, G. M. Whitesides, D. L. Allara, A. N. Parikh and S. Atre, “Self-Assembled monolayers and multilayers of conjugated thiols,.alpha.,.omega.-dithiols, and thioacetyl-containing adsorbates. Understanding attachments between potential molecular wires and gold surfaces”, J. Am. Chem. Soc. 117(37), 9529–9534 (1995). http://dx.doi.org/10.1021/ja00142a021
  9. J. J. Hopfield, J. N. Onuchic and D. N. Beratan, “A molecular shift register based on electron transfer”, Science 241(4867), 817–820 (1988). http://dx.doi.org/10.1126/science.241.4867.817
  10. M. H. Tsai, T. H. Lu and Y. H. Tang, “The electronic and transport properties of a molecular junction studied by an integrated piecewise thermal equilibrium approach”, J. Appl. Phys. 104(4), 043703 (2008). http://dx.doi.org/10.1063/1.2970164
  11. P. W. Fowler, B. T. Pickup and T. Z. Todorova, “Equiconducting molecular conductors”, Chem. Phys. Lett. 465(1–3), 142–146 (2008). http://dx.doi.org/10.1016/j.cplett.2008.09.048
  12. T. Hansen, V. Mujica and M. A. Ratner, “Cotunneling model for current-induced events in molecular wires”, Nano Lett. 8(10), 3525–3531 (2008). http://dx.doi.org/10.1021/nl801001q
  13. J. Kong, N. R. Franklin, C. Zhou, M. G. Chapline, S. Peng, K. Cho and H. J. Dai, “Nanotube molecular wires as chemical sensors”, Science 287(5453), 622–625 (2000). http://dx.doi.org/10.1126/science.287.5453.622
  14. N. R. Franklin, Y. Li, R. J. Chen, A. Javey and H. J. Dai, “Patterned growth of single-walled carbon nanotubes on full 4-inch wafers”, Appl. Phys. Lett. 79(27), 4571–4573 (2001). http://dx.doi.org/10.1063/1.1429294
  15. C. P. Collier, E. W. Wong, M. Belohradský, F. M. Raymo, J. F. Stoddart, P. J. Kuekes, R. S. Williams and J. R. Heath, “Electronically configurable molecular-based lLogic gates”, Science 285(5426), 391–394 (1999). http://dx.doi.org/10.1126/science.285.5426.391
  16. D. I. Gittins, D. Bethell, D. J. Schiffrin and R. J. Nichols, “A nanometre-scale electronic switch consisting of a metal cluster and redox-addressable groups”, Nature 408(6808), 67–69 (2000). http://dx.doi.org/10.1038/35040518
  17. S. Katano, Y. Kim, M. Hori, M. Trenary and M. Kawai, “Reversible control of hydrogenation of a single molecule”, Science 316(5833), 1883–1886 (2007). http://dx.doi.org/10.1126/science.1141410
  18. R. M. Metzger, B. Chen, U. Hopfner, M. V. Lakshmikantham, D. Vuillaume, T. Kawai, X. L. Wu, H. Tachibana, T. V. Hughes, H. Sakurai, J. W. Baldwin, C. Hosch, M. P. Cava, L. Brehmer and G. J. Ashwell, “Unimolecular electrical rectification in hexadecylquinolinium tricyanoquinodimethanide”, J. Am. Chem. Soc. 119(43), 10455–10466 (1997). http://dx.doi.org/10.1021/ja971811e
  19. B. Chen and R. M. Metzger, “Rectification between 370 and 105 K in hexadecylquinolinium tricyanoquinodimethanide”, J. Phys. Chem. B 103(21), 4447–4451 (1999). http://dx.doi.org/10.1021/jp990006e
  20. J. Zhao, C. Zeng, X. Cheng, K. D. Wang, G. W. Wang, J. L. Yang, J. G. Hou and Q. S. Zhu, “Single C[sub 59]N Molecule as a molecular rectifier”, Phys. Rev. Lett. 95(4), 045502/1-4 (2005). http://dx.doi.org/10.1103/PhysRevLett.95.045502
  21. Y. Wada, T. Uda, M. Lutwyche, S. Kondo and S. Heike, “A proposal of nanoscale devices based on atom/molecule switching”, J. Appl. Phys. 74(12), 7321–7328 (1993). http://dx.doi.org/10.1063/1.354999
  22. D. Goldhaber-gordon, M. S. Montemerlo, J. C. Love, G. J. Opiteck, James and J. C. Ellenbogen, “Overview of nanoelectronic devices”, Proceedings of the IEEE 85(4), 521–540 (1997). http://dx.doi.org/10.1109/5.573739
  23. C. Joachim, J. K. Gimzewski, R. R. Schlittler and C. Chavy, “Electronic transparence of a single C60 molecule”, Phys. Rev. Lett. 74(11), 2102–2105 (1995). http://dx.doi.org/10.1103/PhysRevLett.74.2102
  24. C. Joachim and J. K. Gimzewski, “An electromechanical amplifier using a single molecule”, Chemical Physics Letters 265(3–5), 353–357 (1997). http://dx.doi.org/10.1016/S0009-2614(97)00014-6
  25. C. Joachim, J. K. Gimzewski and H. Tang, “Physical principles of the single-C60 transistor effect”, Phys. Rev. B-Condensed Matter and Materials Physics 58(24), 16407–16417 (1998). http://dx.doi.org/10.1103/PhysRevB.58.16407
  26. Y. Wada, “Atom electronics: a proposal of atom/molecule switching devices”, Annals of the New York Academy of Sciences 852(1), 257–276 (1998). http://dx.doi.org/10.1111/j.1749-6632.1998.tb09878.x
  27. J. F. Mennemann, A. Jüngel and H. Kosina, “Transient schrödinger-poisson simulations of a high-frequency resonant tunneling diode oscillator”, J. Comput. Phys. 239, 187–205 (2013). http://dx.doi.org/10.1016/j.jcp.2012.12.009
  28. G. Q. Zhang, S. Finefrock, D. X. Liang, Gautam, G. Yadav, H. R. Yang, H. Y. Fang and Y. Wu, “Semiconductor nanostructure -based photovoltaic solar cells”, Nanoscale 3, 2430–2443 (2011). http://dx.doi.org/10.1039/c1nr10152h
  29. Moore, “Cramming more components onto integrated circuits”, Proc. IEEE 86 (1), 82–85 (1998). http://dx.doi.org/10.1109/JPROC.1998.658762
  30. M. Lundstrom and Z. Ren, “Essential physics of carrier transport in nanoscale MOSFETs”, IEEE Trans. Electron Devices 49(1), 133 (2002). http://dx.doi.org/10.1109/16.974760
  31. B. Winstead and U. Ravaioli, “Simulation of schottky barrier MOSFET’s with a coupled quantum injection/monte carlo technique”, IEEE Trans. Electron Devices 47(6), 1241 (2000). http://dx.doi.org/10.1109/16.842968
  32. G. Baccarani and S. Reggiani, “A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects”, IEEE Trans. Electron Devices 46(8), 1656 (1999). http://dx.doi.org/10.1109/16.777154
  33. T. Dürkop, S. A. Getty, Enrique Cobas and M. S. Fuhrer, “Extraordinary mobility in semiconducting carbon nanotubes”, Nano Lett. 4(1), 35–39 (2004). http://dx.doi.org/10.1021/nl034841q
  34. C. W. Zhou, J. Kong and H. J. Dai, “Electrical measurements of individual semiconducting single-wall carbon nanotubes of warious diameters”, Appl. Phys. Lett. 76(12), 1597 (2000). http://dx.doi.org/10.1063/1.126107
  35. A. Bachtold, P. Hadley, T. Nakanishi and C. Dekker, “Logic circuits with carbon nanotube transistors”, Science 294(5545), 1317–1320 (2001). http://dx.doi.org/10.1126/science.1065824
  36. S. J. Wind, J. Appenzeller, R. Martel, V. Derycke and Ph. Avouris, “Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes”, Appl. Phys. Lett. 80(20), 3817 (2002). http://dx.doi.org/10.1063/1.1480877
  37. M. H. Yang, K. B. K. Teo, L. Gangloff, W. I. Milne, D. G. Hasko, Y. Robert and P. Legagneux, “Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors”, Appl. Phys. Lett. 88(11), 113 507 (2006). http://dx.doi.org/10.1063/1.2186100
  38. S. H. Hur, M. H. Yoon, A. Gaur, M. Shim, A. Facchetti, T. J. Marks and J. A. Rogers, “Organic nanodielectrics for low voltage carbon nanotube thin film transistors and complementary logic gates”, J. Am. Chem. Soc. 127(40), 13808 (2005). http://dx.doi.org/10.1021/ja0553203
  39. R. Martel, T. Schmidt, H. R. Shea, T. Hertel and Ph. Avouris, “Single- and multi-wall carbon nanotube field-effect transistors”, Appl. Phys. Lett. 73(17), 2447 (1998). http://dx.doi.org/10.1063/1.122477
  40. S. J. Tans, A. R. M. Verschueren and C. Dekker, “Room-temperature transistor based on a single carbon nanotube”, Nature 393(6680), 49–52 (1998). http://dx.doi.org/10.1038/29954
  41. C. X. Chen and Y. F. Zhang, “Carbon nanotube multi-channeled field-effect transistors”, J. Nanosci. Nanotech. 6(12), 3789–3793 (2006). http://dx.doi.org/10.1166/jnn.2006.626
  42. M. M. Shulaker, G. Hills, N. Patil, H. Wei, H. Y. Chen, H. S. P. Wong and S. Mitra, “Carbon nanotube computer”, Nature 501(7468), 526–530 (2013). http://dx.doi.org/10.1038/nature12502
  43. J. W. Fergus, “Solid electrolyte based sensors for the measurement of CO and hydrocarbon gases”, Sens. Actuators B-Chem 122(2), 683–693 (2007). http://dx.doi.org/10.1016/j.snb.2006.06.024
  44. R. Ramamoorthy, P. K. Dutta and S. A. Akbar, “Oxygen sensors: materials, methods, designs and applications”, J. Mater. Sci. 38(21), 4271–4282 (2003). http://dx.doi.org/10.1023/A:1026370729205
  45. D. D. Lee, D. S. Lee, “Environmental gas sensors”, IEEE Sens. J. 1, 214–224 (2001). http://dx.doi.org/10.1109/JSEN.2001.954834
  46. A. M. Azad, S. A. Akbar, S. G. Mhaisalkar, L. D. Birkefeld and K. S. Goto, “Solid-state gas sensors: A Review”, J. Electrochem. Soc. 139(12), 3690–3704 (1992). http://dx.doi.org/10.1149/1.2069145
  47. J. Janata, M. Josowicz, P. Vanysek, D. M. DeVaney, “Chemical sensors”, Anal. Chem. 70(20), 179–208 (1998). http://dx.doi.org/10.1021/a1980010w
  48. R. Knake, P. Jacquinot, A. W. E. Hodgson and P. C. Hauser, “Amperometric sensing in the gas-phase”, Anal. Chim. Acta 549(1–2), 1–9 (2005). http://dx.doi.org/10.1016/j.aca.2005.06.007
  49. J. Wang, “Carbon-nanotube based electrochemical biosensors: A Review”, Electroanalysis 17(1), 7–14 (2005). http://dx.doi.org/10.1002/elan.200403113
  50. M. Valcárcel, S. Cárdenas and B. M. Simonet, “Role of carbon nanotubes in analytical science”, Anal. Chem 79(13), 4788–4797 (2007). http://dx.doi.org/10.1021/ac070196m
  51. G. Gruner, “Carbon nanotube transistors for biosensing applications”, Anal. Bioanal. Chem. 384(2), 322–335 (2006). http://dx.doi.org/10.1007/s00216-005-3400-4
  52. B. L. Allen, P. D. Kichambare and A. Star, “Carbon nanotube field-effect-transistor-based biosensors”, Adv. Mater. 19(11), 1439–1451 (2007). http://dx.doi.org/10.1002/adma.200602043
  53. T. Zhang, S. Mubeen, N. V. Myung and M. A. Deshusses, “Recent progress in carbon nanotube-based gas sensors”, Nanotechnology 19(33), 332001 (2008). http://dx.doi.org/10.1088/0957-4484/19/33/332001
  54. S. J. Tans, A. R. M. Verschueren and Cees Dekker, “Room-temperature transistor based on a single carbon nanotube”, Nature 393(6680), 49–52 (1998). http://dx.doi.org/10.1038/29954
  55. R. Martel, T. Schmidt, H. R. Shea, T. Hertel and Ph. Avouris, “Single- and multi-wall carbon nanotube field-effect transistors”, Appl. Phys. Lett. 73(17), 2447 (1998). http://dx.doi.org/10.1063/1.122477
  56. J. Kong, N. R. Franklin, C. W. Zhou, M. G. Chapline, S. Peng, K. Cho, H. J. Dai, “Nanotube molecular wires as chemical sensors”, Science 287(5453), 622–625 (2000). http://dx.doi.org/10.1126/science.287.5453.622
  57. J. Koh, B. Kim, S. Hong, H. Choi and H. Im, “Nanotube-based chemical and biomolecular sensors”, J. Mater. Sci. Technol. 24(4), 578–588 (2008). http://www.jmst.org/EN/Y2008/V24/I04/578
  58. S. Chattopadhyay, A. Ganguly, K. H. Chen and L. C. Chen, “One-dimensional group III-Nitrides: growth, properties, and applications in nanosensing and nano-optoelectronics”, Crit. Rev. Solid State Mater. Sci. 34(3–4), 224–279 (2009). http://dx.doi.org/10.1080/10408430903352082
  59. A. Qureshi, W. P. Kang, J. L. Davidson and Y. Gurbuz, “Review on carbon-derived, solid-state, micro and nano sensors for electrochemical sensing applications”, Diam. Relat. Mater. 18(12), 1401–1420 (2009). http://dx.doi.org/10.1016/j.diamond.2009.09.008
  60. S. J. Pearton, F. Ren, Y. L. Wang, B. H. Chu, K. H. Chen, C. Y. Chang, W. Lim, J. Lin and D. P. Norton, “Recent advances in wide bandgap semiconductor biological and gas sensors”, Prog. Mater. Sci. 55(1), 1–59 (2010). http://dx.doi.org/10.1016/j.pmatsci.2009.08.003
  61. Y. Zhang, J. H. Liu and C. C. Zhu, “Novel gas ionization sensors using carbon nanotubes”, Sens. Lett. 8(2), 219–227 (2010). http://dx.doi.org/10.1166/sl.2010.1270
  62. P. A. Smith, C. J. Lepage, K. L. Harrer and P. J. Brochu, “Hand-held photoionization instruments for quantitative detection of sarin vapor and for rapid qualitative screening of contaminated objects”, J. Occup. Environ. Hyg. 4(10), 729–738 (2007). http://dx.doi.org/10.1080/15459620701547233
  63. Y. W. Cheng, Z. Yang, H. Wei, Y. Y. Wang, L. M. Wei and Y. F. Zhang, “Progress in carbon nanotube gas sensor research”, Acta Phys. Chim. Sin. 26(12), 3127–3142 (2010). http://dx.doi.org/10.3866/PKU.WHXB20101138
  64. Z. Y. Hou, H. Liu, X. Wei, J. H. Wu, W. M. Zhou, Y. F. Zhang, D. Xu and B. C. Cai, “MEMS-based microelectrode system incorporating carbon nanotubes for ionization gas sensing”, Sens. Actuators B: Chemical 127(2), 637–648 (2007). http://dx.doi.org/10.1016/j.snb.2007.05.026
  65. N. Dattoli, Q. Wan, W. Guo, Y. Chen, X. Pan and W. Lu, “Fully transparent thin-film transistor devices based on SnO2 nanowires”, Nano Lett. 7(8), 2463–2469 (2007). http://dx.doi.org/10.1021/nl0712217
  66. C. Korman and GE Global Research, “Overview of solar photovoltaic markets and technology”, Presentation given for MSE 542, A short course presented at Cornell University, March 28 (2006).
  67. G. Q. Zhang, S. Finefrock, D. X. Liang, G. G. Yadav, H. R. Yang, H. Y. Fang and Y. Wu, “Semiconductor nanostructure-based photovoltaic solar cells”, Nanoscale 3(6), 2430–2443 (2011). http://dx.doi.org/10.1039/c1nr10152h
  68. R. D. Schaller and V. I. Klimov, “High efficiency carrier multiplication in PbSe nanocrystals: implications for solar energy conversion”, Phys. Rev. Lett. 92(18), 186601–186604 (2004). http://dx.doi.org/10.1103/PhysRevLett.92.186601
  69. R. J. Ellingson, M. C. Beard, J. C. Johnson, P. Yu, O. I. Micic, A. J. Nozik, A. Shabaev and A. L. Efros, “Highly efficient multiple exciton generation in colloidal PbSe and PbS quantum dots”, Nano Lett. 5(5), 865–871 (2005). http://dx.doi.org/10.1021/nl0502672
  70. J. E. Murphy, M. C. Beard, A. G. Norman, S. P. Ahrenkiel, J. C. Johnson, P. Yu, O. I. Micic, R. J. Ellingson and A. J. Nozik, “PbTe colloidal nanocrystals: synthesis, characterization, and multiple exciton generation”, J. Am. Chem. Soc. 128(10), 3241–3247 (2006).http://dx.doi.org/10.1021/ja0574973
  71. R. D. Schaller, M. Sykora, S. Jeong and V. I. Klimov, “High-efficiency carrier multiplication and ultrafast charge separation in semiconductor nanocrystals studied via time-resolved photoluminescence”, J. Phys. Chem. B. 110(50), 25332–25338 (2006). http://dx.doi.org/10.1021/jp065282p
  72. M. C. Beard, K. P. Knutsen, P. Yu, J. M. Luther, Q. Song, W. K. Metzger, R. J. Ellingson and A. J. Nozik, “Multiple exciton generation in colloidal silicon nanocrystals”, Nano Lett. 7(8), 2506–2512 (2007). http://dx.doi.org/10.1021/nl071486l
  73. J. J. H. Pijpers, E. Hendry, M. T. W. Milder, R. Fanciulli, J. Savolainen, J. L. Herek, D. Vanmaekelbergh, S. Ruhman, D. Mocatta, D. Oron, A. Aharoni, U. Banin and M. Bonn, “Carrier multiplication and Its reduction by photodoping in colloidal InAs quantum dots”, J. Phys. Chem. C. 111(11), 4146–4152 (2007). http://dx.doi.org/10.1021/jp066709v
  74. A. J. Nozik, “Quantum dot solar cells”, Physica E 14(1–2), 115–120 (2002). http://dx.doi.org/10.1016/S1386-9477(02)00374-0
  75. G. F. Brown and J. Wu, “Third generation photovoltaics”, Laser Photonics Rev. 3(4), 394–405 (2009). http://dx.doi.org/10.1002/lpor.200810039
  76. R. Zhang, X. Y. Chen, J. J. Lu and W. Z. Shen, “Photocurrent of hydrogenated nanocrystalline silicon thin film/crystalline silicon heterostructure”, J. Appl. Phys. 102(12), 123708 (2007). http://dx.doi.org/10.1063/1.2826742
  77. C. Chen, Y. Lu, E. S. Kong, Y. Zhang and S. T. Lee, “Nanowelded carbon-nanotube-based solar microcells”, Small 4(9), 1313–1318 (2008). http://dx.doi.org/10.1002/smll.200701309
  78. N. M. Gabor, Z. Zhong, K. Bosnick, J. Park and P. L. McEuen, “Extremely efficient multiple electron-hole pair generation in carbon nanotube photodiodes”, Science 325(5946), 1367–1371 (2009). http://dx.doi.org/10.1126/science.1176112
  79. M. Albota, D. Beljonne, J. L. Brédas, J. E. Ehrlich, J. Y. Fu, A. A. Heikal, S. E. Hess, T. Kogej, M. D. Levin, S. R. Marder, D. M. Maughon, J. W. Perry, H. Röckel, M. Rumi, G. Subramaniam, W. W. Webb, X. L. Wu and C. Xu, “Design of organic molecules with large two-photon absorption cross sections”, Science 281(5383), 1653–1656 (1998). http://dx.doi.org/10.1126/science.281.5383.1653
  80. C. Strumpel, M. McCann, G. Beaucarne, V. Arkhipov, A. Slaoui, V. Svrcek, C. del Canizo and I. Tobias, “Modifying the solar spectrum to enhance silicon solar cell efficiency—An overview of available materials”, Sol. Energy Mater. Sol. Cells 91(4), 238–249 (2007). http://dx.doi.org/10.1016/j.solmat.2006.09.003
  81. E. Garnett and P. D. Yang, “Light trapping in silicon nanowire solar cells”, Nano Lett. 10(3), 1082–1087 (2010). http://dx.doi.org/10.1021/nl100161z
  82. H. J. Hovel, “Semiconductors and semimetals”, Academic Press, New York, San Francisco, London Subsidiary of Harcoun Brace Jvanovich Publishers 48–69 (1976).
  83. F. Pehnchon and P. Mialhe, “Toward a theoretical limit of solar cell efficiency with light trapping and sub-structure”, Solar Energy 54(6), 381–385 (1995). http://dx.doi.org/10.1016/0038-092X(95)00005-C
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