Issue

Vol. 2 No. 4 (2010)

Controlled Growth and Cathodoluminescence Property of ZnS nanobelts with Large Aspect Ratio

https://doi.org/10.1007/BF03353854
Xiang Wu
College of Chemistry and Chemical Engineering, Harbin Normal University, Harbin 150025, P. R. China
Ying Lei
College of Chemistry and Chemical Engineering, Harbin Normal University, Harbin 150025, P. R. China
Yufeng Zhang
Center for Biomedical Materials and Engineering, Harbin Engineering University Harbin 150001 P. R. China
Fengyu Qu
College of Chemistry and Chemical Engineering, Harbin Normal University, Harbin 150025, P. R. China

Corresponding Author: Fengyu Qu

qufengyu@hrbnu.edu.cn

Nano-Micro Letters, Vol. 2 No. 4 (2010), Article Number: 272-276

Abstract

ZnS nanobelts with large aspect ratio are successfully synthesized on a large scale through thermally evaporating of ZnS powder with a trace of SnO2 powder using gold coated Si wafer as the substrate at 1100°C. The results indicate that the as-obtained ZnS nanobelts are about 10 nm in thickness and hundreds of micrometers in length, and the aspect ratio reaches more than 104. Substrate dependent experiments are conducted to better study the growth mechanism of the ZnS nanobelts. Subsequently, optical properties of the as-synthesized ZnS nanobelts are also investigated by using a cathodoluminescence (CL) system, which shows the existence of a strong ultraviolet emission at 342 nm and two poor emission peaks at 522 nm and 683 nm at room temperature, respectively.

Keywords

Semiconductor ZnS Nanobelts Cathodoluminescence
Wu, Xiang, Ying Lei, Yufeng Zhang, and Fengyu Qu. 2014. “Controlled Growth and Cathodoluminescence Property of ZnS Nanobelts With Large Aspect Ratio”. Nano-Micro Letters 2 (4):272-76. https://doi.org/10.1007/BF03353854.
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References
  1. A. M. Qin, Z. Li, R. S. Yang, Y. D. Gu, Y. Z. Liu and Z. L. Wang, Solid Stat. Commun. 148, 145 (2008). 10.1016/j.ssc.2008.07.039
  2. D. P. Wang and Q. Chen, J Phys. Chem. C 112, 15129 (2008).
  3. Z. R. Dai, Z. W. Pan and Z. L. Wang, Adv. Funct. Mater., 9 (2003). 10.1002/adfm.200390013
  4. L. Zhang, X. Yang, J. Dong and Y. Xie, Chem. Mater. 21, 5681 (2009). 10.1021/cm9023887
  5. H. B. Zeng, C. Y. Zhi, Z H. Zhang, X. L. Wei, X. B. Wang, W. L. Guo, Y. Bando and D. Golberg, Nano Lett. 10, 5049 (2010). 10.1021/nl103251m
  6. L. Li, P. S. Lee, C. Y. Yan, T. Y. Zhai, X. S. Fang, M. Y. Liao, Y. Koide, Y. Bando and D. Golberg, Adv. Mater. 22, 5145 (2010). 10.1002/adma.201002608
  7. F. Lu, W. P. Cai, Y. G. Zhang, Y. Li, F. Q. Sun, S. H. Seo and S. O. Cho, J Phys. Chem. C 111, 13385 (2007).
  8. L. Li, X. S. Fang, T. Y. Zhai, M. Y. Liao, U. K. Gautam, X. C. Wu, Y. Koide, Y. Bando and D. Golberg, Adv. Mater. 22, 4151 (2010). 10.1002/adma.201001413
  9. X. C. Wu, Y. R. Tao and Q. X. Gao, Nano Res. 2, 558 (2009). 10.1007/s12274-009-9055-2
  10. P. C. Wu, R. M. Ma, C. Liu, T. Sun, Y. Ye and L. Dai, J Mater. Chem. 15, 2125 (2009). 10.1039/b822518d
  11. L. Li, P. C. Wu, X. S. Fang, T. Y. Zhai, L. Dai, M. Y. Liao, Y. Koide, H. Q. Wang, Y. Bando and D. Golberg, Adv. Mater. 22, 3161(2010). 10.1002/adma.201000144
  12. Y. Su, S. Li, L. Xu, Y. Q. Chen, Q. T. Zhou, B. Peng, S. Yin, X. Meng, X. M. Liang and Y. Feng, Nanotechnology 17, 6007 (2006). 10.1088/0957-4484/17/24/017
  13. Y. Li and X. L. Ma, Phys. Stat. Sol. A 202, 435 (2005). 10.1002/pssa.200406924
  14. Z. W. Pan, Z. R. Dai and Z. L. Wang, Science 291, 1947 (2001). 10.1126/science.1058120
  15. G. Z. Shen, D. Chen, P. C. Chen and C. W. Zhou, ACS Nano 3, 1115 (2009). 10.1021/nn900133f
  16. Z. Fang, K. B. Tang, J. M. Shen, G. Z. Shen and Q. Yang, Cryst. Growth Des. 7, 2254 (2007). 10.1021/cg06 07755
  17. J. Lin, Y. Huang, Y. Bando, C. C. Tang, C. Li and D. Golberg, ACS Nano 4, 2452 (2010). 10.1021/nn100254f
  18. Y. G. Li, P. Feng, X. Y. Xue, S. L. Shi, X. Q. Fu, C. Wang, Y. G. Wang and T. H. Wang, Appl. Phys. Lett. 90, 042109 (2007). 10.1063/1.2432278
  19. E. Comini, G. Faglia, G. Sberveglieri, Z. W. Pan and Z. L. Wang, Appl. Phys. Lett. 81, 1869 (2002). 10.1063/1.1504867
  20. H. Zhang, W. Q. Ding, K. He and M. Li, Nanoscale. Res. Lett. 5, 1264 (2010). 10.1007/s11671-010-9635-9
  21. X. S. Fang, Y. Bando, G. Z. Shen, C. H. Ye, U. K. Gautam, P. M. F. J. Costa, C. Y. Zhi, C. C. Tang and D. Golberg, Adv. Mater. 19, 2593 (2007). 10.1002/adma.200700078
  22. X. S. Fang, S. L. Xiong, T. Y. Zhai, Y. Bando, M. Y. Liao, U. K. Gautam, Y. Koide, X. G. Zhang, Y. T. Qian and D. Golberg, Adv. Mater. 21, 5016 (2009). 10.1002/adma.200902126
  23. C. S. Lao, Y. Li, C. P. Wong and Z. L. Wang, Nano Lett. 7, 1323 (2007). 10.1021/nl070359m
  24. J. H. He, Y. H. Lin, M. E. Mcconney, W. Tsukruk, Z. L. Wang and G. Bao, J Appl. Phys. 102, 084303 (2007). 10.1063/1.2798390
  25. S. Yamaga, A. Yoshikawa and H. Kasai, J. Cryst. Growth 86, 252 (1998). 10.1016/0022-0248(90)90725-Z
  26. Z. X. Zhang, J. X. Wang, H. J. Yuan, Y. Gao, D. F. Liu, L. Song, Y. J. Xiang, X. W. Zhao, L. F. Liu, S. D. Luo, X. Y. Dou, S. C. Mou, W. Y. Zhou and S. S. Xie, J. Phys. Chem. B 109, 18352 (2005). 10.1021/jp052199d
  27. X. Fan, X. M. Meng, X. H. Zhang, W. S. Shi, W. J. Zhang, J. A. Zapien, C. S. Lee and S. T. Lee, Angew. Chem. Int. Ed. 45, 2568 (2006). 10.1002/anie.200504069
  28. Y. F. Hao, G. W. Meng, Z. L. Wang, C. H. Ye and L. D. Zhang, Nano Lett. 6, 1650 (2006). 10.1021/nl060695n
  29. M. Lin, T. Sudhiranjan, C. Boothroyd and K. P. Loh, Chem. Phys. Lett. 400, 175 (2004). 10.1016/j.cplett.2004.10.115
  30. M. Abdulkhadar and B. thomas, Nanostruc. Mater. 5, 289 (1995). 10.1016/0965-9773(95)00237-9
  31. R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4, 89 (1964). 10.1063/1.1753975
  32. S. Bae, J. Lee, H. Jung, J. Park and J. Ahn, J. Am. Chem. Soc. 127, 10802 (2005). 10.1021/ja0534102
  33. X. Wu, W. Cai and F. Y. Qu, Chin. Phys. B 18, 1669 (2009). 10.1088/1674-1056/18/4/065
  34. X. Wu, F. Y. Qu, G. Z. Shen and W. Cai, J. Alloys Compd. 482, L32 (2009). 10.1016/j.jallcom.2009.04.070
  35. X. S. Fang, C. H. Ye, L. D. Zhang, Y. H. Wang and Y. C. Wu, Adv. Funct. Mater. 15, 63 (2005). 10.1002/adfm.200305008
  36. X. Wu, J. H. Sui, W. Cai and P. Jiang, Chin. Phys. Lett. 25, 737 (2008). 10.1088/0256-307X/25/2/104
  37. H. B. Zeng, G. T. Duan, Y. Li, S. K. Yang, X. X. Xu and W. P. Cai, Adv. Funct. Mater. 20, 561 (2010). 10.1002/dfm.200901884
  38. H. B. Chen, X. Wu, L. H. Gong, C. Ye, F. Y. Qu and G. Z. Shen, Nanoscale Res. Lett. 5, 570 (2010). 10.1007/11671-009-9506-4
  39. Y. T. Han, X. Wu, G. Z. Shen, B. Dierre, L. H. Gong, F. Y. Qu, Y. Bando, T. Sekiguchi, F. Fabbri and D. Golberg, J. Phys. Chem. C 114, 8235 (2010). 10.1021/jp100942m
  40. H. B. Zeng, W. P. Cai, Y. Li, J. L. Hu and P. S. Liu, J. Phys. Chem. B 109, 18260 (2005). 10.1021/jp052258n
  41. J. Z. Liu, P. X. Yan, G. H. Yue, J. B. Chang, D. M. Qu and R. F. Zhuo, J. Phys. D: Appl. Phys. 39, 2352 (2006).
  42. S. J. Xu, S. J. Chua, B. Liu, L. M. Gan, C. H. Chew and G. Q. Xu, Appl. Phys. Lett. 73, 478 (1998). 10.1063/.121906
  43. H. Liang, Y. Shimizu, T. Sasaki, H. Umehara and N. Koshizaki, J. Phys. Chem. B 108, 9728 (2004). 10.1021/p037963f
  44. J. Z. Liu, P. X. Yan, G. H. Yue, J. B. Chang, D. M. Qu and R. F. Zhuo. J. Phys. D: Appl. Phys. 39, 2352 (2006). 10.1088/0022-3727/39/11/006
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