Issue

Vol. 17 (2025)

Two-Dimensional Materials, the Ultimate Solution for Future Electronics and Very-Large-Scale Integrated Circuits

https://doi.org/10.1007/s40820-025-01769-2
Laixiang Qin
Ningbo Institute of Digital Twin, Eastern Institute of Technology, Ningbo City 315100, Zhejiang, People’s Republic of China
Li Wang
Ningbo Institute of Digital Twin, Eastern Institute of Technology, Ningbo City 315100, Zhejiang, People’s Republic of China

Corresponding Author: Li Wang

liwang@eitech.edu.cn

Nano-Micro Letters, Vol. 17 (2025), Article Number: 255

Abstract

The relentless down-scaling of electronics grands the modern integrated circuits (ICs) with the high speed, low power dissipation and low cost, fulfilling diverse demands of modern life. Whereas, with the semiconductor industry entering into sub-10 nm technology nodes, degrading device performance and increasing power consumption give rise to insurmountable roadblocks confronted by modern ICs that need to be conquered to sustain the Moore law’s life. Bulk semiconductors like prevalent Si are plagued by seriously degraded carrier mobility as thickness thinning down to sub-5 nm, which is imperative to maintain sufficient gate electrostatic controllability to combat the increasingly degraded short channel effects. Nowadays, the emergence of two-dimensional (2D) materials opens up new gateway to eschew the hurdles laid in front of the scaling trend of modern IC, mainly ascribed to their ultimately atomic thickness, capability to maintain carrier mobility with thickness thinning down, dangling-bonds free surface, wide bandgaps tunability and feasibility to constitute diverse heterostructures. Blossoming breakthroughs in discrete electronic device, such as contact engineering, dielectric integration and vigorous channel-length scaling, or large circuits arrays, as boosted yields, improved variations and full-functioned processor fabrication, based on 2D materials have been achieved nowadays, facilitating 2D materials to step under the spotlight of IC industry to be treated as the most potential future successor or complementary counterpart of incumbent Si to further sustain the down-scaling of modern IC.


Highlights:
1 With the incessant down-scaling of electronics, traditional semiconductors like Si are encountered with insurmountable hurdles to maintain performance increase without bringing about additional issues of power consumption escalating, in this context, two-dimensional (2D) materials emerge as superior candidates to supersede or complement Si attributed to their marvelous electronic properties to further sustain the Moore’s law life.
2 2D materials-based electronics in More Moore and More than Moore’ regimes have attained promising achievements and showcased monumental potentials applications in low power consumption integrated circuits
3 2D materials-based integrated circuits have gone through a promising development, evolving from small-scale integrated circuits (ICs) to full-functioned processors. Whereas enormous endeavors are waited to be dedicated to realize large-scale ICs attributed to lack of large-scale 2D materials of electronic qualities and immature fabricating techniques.

Keywords

2D materials Short channel effects Integrated circuits Degraded carrier mobility Moore’s law
Qin, Laixiang, and Li Wang. 2025. “Two-Dimensional Materials, the Ultimate Solution for Future Electronics and Very-Large-Scale Integrated Circuits”. Nano-Micro Letters 17 (May):255. https://doi.org/10.1007/s40820-025-01769-2.
Download Citation
Endnote/Zotero/Mendeley (RIS)
BibTeX
References
  1. G.E. Moore, Cramming more components onto integrated circuits. Proc. IEEE 86(1), 82–85 (1998). https://doi.org/10.1109/JPROC.1998.658762
  2. M. Chhowalla, D. Jena, H. Zhang, Two-dimensional semiconductors for transistors. Nat. Rev. Mater. 1(11), 16052 (2016). https://doi.org/10.1038/natrevmats.2016.52
  3. H. Li, Q. Li, Y. Li, Z. Yang, R. Quhe et al., Recent experimental breakthroughs on 2D transistors: approaching the theoretical limit. Adv. Funct. Mater. 34(38), 2402474 (2024). https://doi.org/10.1002/adfm.202402474
  4. D. Bol, R. Ambroise, D. Flandre, J.-D. Legat, Interests and limitations of technology scaling for subthreshold logic. IEEE T. VLSI Syst. 17(10), 1508–1519 (2009). https://doi.org/10.1109/TVLSI.2008.2005413
  5. W. Zhao, Y. Cao, New generation of predictive technology model for sub-45 nm early design exploration. IEEE Trans. Electron Devices 53(11), 2816–2823 (2006). https://doi.org/10.1109/TED.2006.884077
  6. Q. Yang, Z.-D. Luo, H. Duan, X. Gan, D. Zhang et al., Steep-slope vertical-transport transistors built from sub-5 nm Thin van der Waals heterostructures. Nat. Commun. 15(1), 1138 (2024). https://doi.org/10.1038/s41467-024-45482-x
  7. T. Pei, L. Bao, G. Wang, R. Ma, H. Yang et al., Few-layer SnSe2 transistors with high on/off ratios. Appl. Phys. Lett. 108(5), 053506 (2016). https://doi.org/10.1063/1.4941394
  8. J. Seo, J. Lee, M. Shin, Analysis of drain-induced barrier rising in short-channel negative-capacitance FETs and its applications. IEEE Trans. Electron Devices 64(4), 1793–1798 (2017). https://doi.org/10.1109/TED.2017.2658673
  9. J.-S. Yoon, J. Jeong, S. Lee, R.-H. Baek, Bottom oxide bulk FinFETs without punch-through-stopper for extending toward 5-nm node. IEEE Access 7, 75762 (2019). https://doi.org/10.1109/ACCESS.2019.2920902
  10. I. Ferain, C.A. Colinge, J. Colinge, Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors. Nature 479, 310 (2011). https://doi.org/10.1038/nature10676
  11. H. Wang, S. Gao, F. Zhang, F. Meng, Z. Guo et al., Repression of interlayer recombination by graphene generates a sensitive nanostructured 2D vdW heterostructure based photodetector. Adv. Sci. 8, 2100503 (2021). https://doi.org/10.1002/advs.202100503
  12. L. Yin, R. Cheng, J. Ding, J. Jiang, Y. Hou et al., Two-dimensional semiconductors and transistors for future integrated circuits. ACS Nano 18(11), 7739–7768 (2024). https://doi.org/10.1021/acsnano.3c10900
  13. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang et al., Electric field effect in atomically thin carbon films. Science 306(5696), 666–669 (2004). https://doi.org/10.1126/science.1102896
  14. X. Jing, Y. Illarionov, E. Yalon, P. Zhou, T. Grasser et al., Engineering field effect transistors with 2D semiconducting channels: status and prospects. Adv. Funct. Mater. 30(18), 1901971 (2020). https://doi.org/10.1002/adfm.201901971
  15. F. Schwierz, J. Pezoldt, R. Granzner, Two-dimensional materials and their prospects in transistor electronics. Nanoscale 7(18), 8261–8283 (2015). https://doi.org/10.1039/c5nr01052g
  16. Y. Liu, X. Duan, H.-J. Shin, S. Park, Y. Huang et al., Promises and prospects of two-dimensional transistors. Nature 591(7848), 43–53 (2021). https://doi.org/10.1038/s41586-021-03339-z
  17. Y. Liu, X. Duan, Y. Huang, X. Duan, Two-dimensional transistors beyond graphene and TMDCs. Chem. Soc. Rev. 47(16), 6388–6409 (2018). https://doi.org/10.1039/c8cs00318a
  18. M.C. Lemme, L. Li, T. Palacios, F. Schwierz, Two-dimensional materials for electronic applications. MRS Bull. 39, 711–718 (2014). https://doi.org/10.1557/mrs.2014.138
  19. X. Zhang, Software system research in post-Moore’s Law era: a historical perspective for the future. Sci. China Inf. Sci. 62(9), 196101 (2019). https://doi.org/10.1007/s11432-019-9860-1
  20. H. Xu, H. Zhang, Z. Guo, Y. Shan, S. Wu et al., High-performance wafer-scale MoS2 transistors toward practical application. Small 14(48), e1803465 (2018). https://doi.org/10.1002/smll.201803465
  21. J. Chen, M. Sun, Z. Wang, Z. Zhang, K. Zhang et al., Performance limits and advancements in single 2d transition metal dichalcogenide transistor. Nano-Micro Lett. 16, 264 (2024). https://doi.org/10.1007/s40820-024-01461-x
  22. A.E. Naclerio, P.R. Kidambi, A review of scalable hexagonal boron nitride (h-BN) synthesis for present and future applications. Adv. Mater. 35(6), e2207374 (2023). https://doi.org/10.1002/adma.202207374
  23. Z. Dong, Q. Hua, J. Xi, Y. Shi, T. Huang et al., Ultrafast and low-power 2D Bi2O2Se memristors for neuromorphic computing applications. Nano Lett. 23(9), 3842–3850 (2023). https://doi.org/10.1021/acs.nanolett.3c00322
  24. J.-K. Huang, Y. Wan, J. Shi, J. Zhang, Z. Wang et al., High-κ perovskite membranes as insulators for two-dimensional transistors. Nature 605(7909), 262–267 (2022). https://doi.org/10.1038/s41586-022-04588-2
  25. Q.H. Wang, K. Kalantar-Zadeh, A. Kis, J.N. Coleman, M.S. Strano, Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7(11), 699–712 (2012). https://doi.org/10.1038/nnano.2012.193
  26. W. Zhu, T. Low, H. Wang, P. Ye, X. Duan, Nanoscale electronic devices based on transition metal dichalcogenides. D Mater. 6(3), 032004 (2019). https://doi.org/10.1088/2053-1583/ab1ed9
  27. A.K. Geim, K.S. Novoselov, The rise of graphene. Nat. Mater. 6, 183 (2007). https://doi.org/10.1038/nmat1849
  28. Z. Guan, H. Hu, X. Shen, P. Xiang, N. Zhong et al., Recent progress in two-dimensional ferroelectric materials. Adv. Electron. Mater. 6(1), 1900818 (2020). https://doi.org/10.1002/aelm.201900818
  29. X. Zou, H. Liang, Y. Li, Y. Zou, F. Tian et al., 2D Bi2O2Te semiconductor with single-crystal native oxide layer. Adv. Funct. Mater. 33(18), 2213807 (2023). https://doi.org/10.1002/adfm.202213807
  30. H. Song, F. Zhou, S. Yan, X. Su, H. Wu et al., Enhanced transport and optoelectronic properties of van der waals materials on CaF2 films. Nano Lett. 23(11), 4983–4990 (2023). https://doi.org/10.1021/acs.nanolett.3c00818
  31. J. Jiang, L. Xu, C. Qiu, L.-M. Peng, Ballistic two-dimensional InSe transistors. Nature 616(7957), 470–475 (2023). https://doi.org/10.1038/s41586-023-05819-w
  32. S. Zeng, C. Liu, P. Zhou, Transistor engineering based on 2D materials in the post-silicon era. Nat. Rev. Electr. Eng. 1(5), 335–348 (2024). https://doi.org/10.1038/s44287-024-00045-6
  33. Y. Zhai, Z. Feng, Y. Zhou, S.-T. Han, Energy-efficient transistors: suppressing the subthreshold swing below the physical limit. Mater. Horiz. 8(6), 1601–1617 (2021). https://doi.org/10.1039/d0mh02029j
  34. L. Qin, H. Tian, C. Li, Z. Xie, Y. Wei et al., Steep slope field effect transistors based on 2D materials. Adv. Electron. Mater. 10(8), 2300625 (2024). https://doi.org/10.1002/aelm.202300625
  35. D. Daw, H. Bouzid, M. Jung, D. Suh, C. Biswas et al., Ultrafast negative capacitance transition for 2D ferroelectric MoS2/graphene transistor. Adv. Mater. 36(13), e2304338 (2024). https://doi.org/10.1002/adma.202304338
  36. K. Nakamura, N. Nagamura, K. Ueno, T. Taniguchi, K. Watanabe et al., All 2D heterostructure tunnel field-effect transistors: impact of band alignment and heterointerface quality. ACS Appl. Mater. Interfaces 12(46), 51598–51606 (2020). https://doi.org/10.1021/acsami.0c13233
  37. X. Xie, Z. Wang, X. Liu, F. Liu, Ternary cold source transistors for multivalue logic applications. Phys. Rev. Appl. 22, 014053 (2024). https://doi.org/10.1103/PhysRevApplied.22.014053
  38. E.C. Ahn, 2D materials for spintronic devices. NPJ 2D Mater. Appl. 4, 17 (2020). https://doi.org/10.1038/s41699-020-0152-0
  39. L. Meng, J. Zhang, X. Yuan, M. Yang, B. Wang et al., Gate voltage dependence ultrahigh sensitivity WS₂ avalanche field-effect transistor. IEEE Trans. Electron Devices 69(6), 3225–3229 (2022). https://doi.org/10.1109/TED.2022.3166714
  40. A. Razavieh, P. Zeitzoff, E.J. Nowak, Challenges and limitations of CMOS scaling for FinFET and beyond architectures. IEEE Trans. Nanotechnol. 18, 999–1004 (2019). https://doi.org/10.1109/TNANO.2019.2942456
  41. J. Ajayan, D. Nirmal, S. Tayal, S. Bhattacharya, L. Arivazhagan et al., Nanosheet field effect transistors-a next generation device to keep Moore’s law alive: an intensive study. Microelectron. J. 114, 105141 (2021). https://doi.org/10.1016/j.mejo.2021.105141
  42. Y.-J. Lee, G.-L. Luo, F.-J. Hou, M.-C. Chen, C.-C. Yang et al., Ge GAA FETs and TMD FinFETs for the applications beyond Si: a review. IEEE J. Electron Devices Soc. 4(5), 286–293 (2016). https://doi.org/10.1109/JEDS.2016.2590580
  43. U.K. Das, M.M. Hussain, Benchmarking silicon FinFET with the carbon nanotube and 2D-FETs for advanced node CMOS logic application. IEEE Trans. Electron Devices 68(7), 3643–3648 (2021). https://doi.org/10.1109/TED.2021.3081076
  44. X. Huang, C. Liu, S. Zeng, Z. Tang, S. Wang et al., Ultrathin multibridge channel transistor enabled by van der waals assembly. Adv. Mater. 33(37), e2102201 (2021). https://doi.org/10.1002/adma.202102201
  45. C. Liu, H. Chen, S. Wang, Q. Liu, Y.-G. Jiang et al., Two-dimensional materials for next-generation computing technologies. Nat. Nanotechnol. 15(7), 545–557 (2020). https://doi.org/10.1038/s41565-020-0724-3
  46. L. Yin, R. Cheng, Y. Wen, C. Liu, J. He, Emerging 2D memory devices for in-memory computing. Adv. Mater. 33(29), 2007081 (2021). https://doi.org/10.1002/adma.202007081
  47. Y. Wang, Q. Sun, J. Yu, N. Xu, Y. Wei et al., Boolean logic computing based on neuromorphic transistor. Adv. Funct. Mater. 33(47), 2305791 (2023). https://doi.org/10.1002/adfm.202305791
  48. H. Yoo, C.-H. Kim, Multi-valued logic system: new opportunities from emerging materials and devices. J. Mater. Chem. C 9(12), 4092–4104 (2021). https://doi.org/10.1039/d1tc00148e
  49. N. Li, Q. Wang, C. He, J. Li, X. Li et al., 2D semiconductor based flexible photoresponsive ring oscillators for artificial vision pixels. ACS Nano 17, 991–999 (2023). https://doi.org/10.1021/acsnano.2c06921
  50. S.B. Jo, J. Kang, J.H. Cho, Recent advances on multivalued logic gates: a materials perspective. Adv. Sci. 8(8), 2004216 (2021). https://doi.org/10.1002/advs.202004216
  51. K. Ashokbhai Patel, R.W. Grady, K.K.H. Smithe, E. Pop, R. Sordan, Ultra-scaled MoS2 transistors and circuits fabricated without nanolithography. 2D Mater. 7(1), 015018 (2020). https://doi.org/10.1088/2053-1583/ab4ef0
  52. D. Jayachandran, N.U. Sakib, S. Das, 3D integration of 2D electronics. Nat. Rev. Electr. Eng. 1(5), 300–316 (2024). https://doi.org/10.1038/s44287-024-00038-5
  53. D. Jayachandran, R. Pendurthi, M.U.K. Sadaf, N.U. Sakib, A. Pannone et al., Three-dimensional integration of two-dimensional field-effect transistors. Nature 625(7994), 276–281 (2024). https://doi.org/10.1038/s41586-023-06860-5
  54. Y. Shen, Z. Dong, Y. Sun, H. Guo, F. Wu et al., The trend of 2D transistors toward integrated circuits: scaling down and new mechanisms. Adv. Mater. 34(48), 2201916 (2022). https://doi.org/10.1002/adma.202201916
  55. G.V. Resta, A. Leonhardt, Y. Balaji, S. De Gendt, P.-E. Gaillardon et al., Devices and circuits using novel 2-D materials: a perspective for future VLSI systems. IEEE T. VLSI Syst. 27(7), 1486–1503 (2019). https://doi.org/10.1109/TVLSI.2019.2914609
  56. C. Sheng, X. Dong, Y. Zhu, X. Wang, X. Chen et al., Two-dimensional semiconductors: from device processing to circuit integration. Adv. Funct. Mater. 33(50), 2304778 (2023). https://doi.org/10.1002/adfm.202304778
  57. M. Turunen, M. Brotons-Gisbert, Y. Dai, Y. Wang, E. Scerri et al., Quantum photonics with layered 2D materials. Nat. Rev. Phys. 4(4), 219–236 (2022). https://doi.org/10.1038/s42254-021-00408-0
  58. K. Khan, A.K. Tareen, M. Aslam, R. Wang, Y. Zhang et al., Recent developments in emerging two-dimensional materials and their applications. J. Mater. Chem. C 8(2), 387–440 (2020). https://doi.org/10.1039/c9tc04187g
  59. P. Kumbhakar, J.S. Jayan, A.S. Madhavikutty, P.R. Sreeram, A. Saritha et al., Prospective applications of two-dimensional materials beyond laboratory frontiers: a review. iScience 26(5), 106671 (2023). https://doi.org/10.1016/j.isci.2023.106671
  60. Y. Wang, S. Sarkar, H. Yan, M. Chhowalla, Critical challenges in the development of electronics based on two-dimensional transition metal dichalcogenides. Nat. Electron. 7(8), 638–645 (2024). https://doi.org/10.1038/s41928-024-01210-3
  61. R.F. Frindt, Single crystals of MoS2 several molecular layers thick. J. Appl. Phys. 37(4), 1928–1929 (1966). https://doi.org/10.1063/1.1708627
  62. P. Joensen, R.F. Frindt, S.R. Morrison, Single-layer MoS2. Mater. Res. Bull. 21(4), 457–461 (1986). https://doi.org/10.1016/0025-5408(86)90011-5
  63. N. Thomas, S. Mathew, K.M. Nair, K. O’Dowd, P. Forouzandeh et al., 2D MoS2: structure, mechanisms, and photocatalytic applications. Mater. Today Sustain. 13, 100073 (2021). https://doi.org/10.1016/j.mtsust.2021.100073
  64. B. Liu, A. Abbas, C. Zhou, Two-dimensional semiconductors: from materials preparation to electronic applications. Adv. Electron. Mater. 3(7), 1700045 (2017). https://doi.org/10.1002/aelm.201700045
  65. S. Manzeli, D. Ovchinnikov, D. Pasquier, O.V. Yazyev, A. Kis, 2D transition metal dichalcogenides. Nat. Rev. Mater. 2(8), 17033 (2017). https://doi.org/10.1038/natrevmats.2017.33
  66. Z. Cheng, X. Jia, B. Han, M. Li, W. Xu et al., P/N-type conversion of 2D MoTe2 controlled by top gate engineering for logic circuits. ACS Appl. Mater. Interfaces 16(28), 36539–36546 (2024). https://doi.org/10.1021/acsami.4c03090
  67. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Single-layer MoS2 transistors. Nat. Nanotechnol. 6(3), 147–150 (2011). https://doi.org/10.1038/nnano.2010.279
  68. S.G. Seo, J. Jeong, S.Y. Kim, A. Kumar, S.H. Jin, Reversible and controllable threshold voltage modulation for n-channel MoS2 and p-channel MoTe2 field-effect transistors via multiple counter doping with ODTS/poly-L-lysine charge enhancers. Nano Res. 14(9), 3214–3227 (2021). https://doi.org/10.1007/s12274-021-3523-8
  69. L. Tang, J. Zou, P-type two-dimensional semiconductors: from materials preparation to electronic applications. Nano-Micro Lett. 15(1), 230 (2023). https://doi.org/10.1007/s40820-023-01211-5
  70. Y.J. Park, A.K. Katiyar, A.T. Hoang, J. Ahn, Controllable P- and N-type conversion of MoTe2 via oxide interfacial layer for logic circuits. Small 15, 1901772 (2019). https://doi.org/10.1002/smll.201901772
  71. R. Kappera, D. Voiry, S.E. Yalcin, B. Branch, G. Gupta et al., Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. Nat. Mater. 13(12), 1128–1134 (2014). https://doi.org/10.1038/nmat4080
  72. D.S. Schulman, A.J. Arnold, S. Das, Contact engineering for 2D materials and devices. Chem. Soc. Rev. 47(9), 3037–3058 (2018). https://doi.org/10.1039/c7cs00828g
  73. B. Luo, G. Liu, L. Wang, Recent advances in 2D materials for photocatalysis. Nanoscale 8(13), 6904–6920 (2016). https://doi.org/10.1039/c6nr00546b
  74. H.R. Banjade, J. Pan, Q. Yan, Monolayer 2D semiconducting tellurides for high-mobility electronics. Phys. Rev. Mater. 5, 014005 (2021). https://doi.org/10.1103/physrevmaterials.5.014005
  75. A. Castellanos-Gomez, Black phosphorus: narrow gap, wide applications. J. Phys. Chem. Lett. 6(21), 4280–4291 (2015). https://doi.org/10.1021/acs.jpclett.5b01686
  76. H. Du, X. Lin, Z. Xu, D. Chu, Recent developments in black phosphorus transistors. J. Mater. Chem. C 3(34), 8760–8775 (2015). https://doi.org/10.1039/c5tc01484k
  77. L. Li, M. Engel, D.B. Farmer, S.J. Han, H.S. Wong, High-performance p-type black phosphorus transistor with scandium contact. ACS Nano 10(4), 4672–4677 (2016). https://doi.org/10.1021/acsnano.6b01008
  78. X. Li, Z. Yu, X. Xiong, T. Li, T. Gao et al., High-speed black phosphorus field-effect transistors approaching ballistic limit. Sci. Adv. 5(6), eaau3194 (2019). https://doi.org/10.1126/sciadv.aau3194
  79. D. He, Y. Wang, Y. Huang, Y. Shi, X. Wang et al., High-performance black phosphorus field-effect transistors with long-term air stability. Nano Lett. 19(1), 331–337 (2019). https://doi.org/10.1021/acs.nanolett.8b03940
  80. P.C. Debnath, K. Park, Y.-W. Song, Recent advances in black-phosphorus-based photonics and optoelectronics devices. Small Meth. 2(4), 1700315 (2018). https://doi.org/10.1002/smtd.201700315
  81. M. Zhang, Q. Wu, F. Zhang, L. Chen, X. Jin et al., 2D black phosphorus saturable absorbers for ultrafast photonics. Adv. Opt. Mater. 7(1), 1800224 (2019). https://doi.org/10.1002/adom.201800224
  82. L. Huang, K.-W. Ang, Black phosphorus photonics toward on-chip applications. Appl. Phys. Rev. 7(3), 031302 (2020). https://doi.org/10.1063/5.0005641
  83. X. Liu, K. Chen, X. Li, Q. Xu, J. Weng et al., Electron matters: recent advances in passivation and applications of black phosphorus. Adv. Mater. 33(50), 2005924 (2021). https://doi.org/10.1002/adma.202005924
  84. D.K. Sang, H. Wang, Z. Guo, N. Xie, H. Zhang, Recent developments in stability and passivation techniques of phosphorene toward next-generation device applications. Adv. Funct. Mater. 29(45), 1903419 (2019). https://doi.org/10.1002/adfm.201903419
  85. A. Pon, A. Bhattacharyya, R. Rathinam, Recent developments in black phosphorous transistors: a review. J. Electron. Mater. 50(11), 6020–6036 (2021). https://doi.org/10.1007/s11664-021-09183-1
  86. H. Cai, Y. Gu, Y.-C. Lin, Y. Yu, D.B. Geohegan et al., Synthesis and emerging properties of 2D layered III–VI metal chalcogenides. Appl. Phys. Rev. 6(4), 041312 (2019). https://doi.org/10.1063/1.5123487
  87. B. Chitara, A. Ya’akobovitz, Elastic properties and breaking strengths of GaS, GaSe and GaTe nanosheets. Nanoscale 10(27), 13022–13027 (2018). https://doi.org/10.1039/C8NR01065J
  88. H. Arora, A. Erbe, Recent progress in contact, mobility, and encapsulation engineering of InSe and GaSe. InfoMat 3(6), 662–693 (2021). https://doi.org/10.1002/inf2.12160
  89. M. Li, C.-Y. Lin, S.-H. Yang, Y.-M. Chang, J.-K. Chang et al., High mobilities in layered InSe transistors with indium-encapsulation-induced surface charge doping. Adv. Mater. 30(44), 1803690 (2018). https://doi.org/10.1002/adma.201803690
  90. D.A. Bandurin, A.V. Tyurnina, G.L. Yu, A. Mishchenko, V. Zólyomi et al., High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe. Nat. Nanotechnol. 12(3), 223–227 (2017). https://doi.org/10.1038/nnano.2016.242
  91. S. Chandra, P. Dutta, K. Biswas, High-performance thermoelectrics based on solution-grown SnSe nanostructures. ACS Nano 16(1), 7–14 (2022). https://doi.org/10.1021/acsnano.1c10584
  92. S. Yang, Y. Liu, M. Wu, L.-D. Zhao, Z. Lin et al., Highly-anisotropic optical and electrical properties in layered SnSe. Nano Res. 11(1), 554–564 (2018). https://doi.org/10.1007/s12274-017-1712-2
  93. T. Knobloch, Y.Y. Illarionov, F. Ducry, C. Schleich, S. Wachter et al., The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials. Nat. Electron. 4(2), 98–108 (2021). https://doi.org/10.1038/s41928-020-00529-x
  94. K. Yi, Y. Wu, L. An, Y. Deng, R. Duan et al., Van der waals encapsulation by ultrathin oxide for air-sensitive 2D materials. Adv. Mater. 36(33), 2403494 (2024). https://doi.org/10.1002/adma.202403494
  95. S. Ahn, G. Kim, P.K. Nayak, S.I. Yoon, H. Lim et al., Prevention of transition metal dichalcogenide photodegradation by encapsulation with h-BN layers. ACS Nano 10(9), 8973–8979 (2016). https://doi.org/10.1021/acsnano.6b05042
  96. N. Petrone, T. Chari, I. Meric, L. Wang, K.L. Shepard et al., Flexible graphene field-effect transistors encapsulated in hexagonal boron nitride. ACS Nano 9(9), 8953–8959 (2015). https://doi.org/10.1021/acsnano.5b02816
  97. N.A.N. Phan, H. Noh, J. Kim, Y. Kim, H. Kim et al., Enhanced performance of WS2 field-effect transistor through mono and bilayer h-BN tunneling contacts. Small 18(13), 2105753 (2022). https://doi.org/10.1002/smll.202105753
  98. T. Li, H. Peng, 2D Bi2O2Se: an emerging material platform for the next-generation electronic industry. Acc. Mater. Res. 2(9), 842–853 (2021). https://doi.org/10.1021/accountsmr.1c00130
  99. A.J. Yang, K. Han, K. Huang, C. Ye, W. Wen et al., Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors. Nat. Electron. 5(4), 233–240 (2022). https://doi.org/10.1038/s41928-022-00753-7
  100. T. Li, T. Tu, Y. Sun, H. Fu, J. Yu et al., A native oxide high-κ gate dielectric for two-dimensional electronics. Nat. Electron. 3(8), 473–478 (2020). https://doi.org/10.1038/s41928-020-0444-6
  101. X. Huang, Z. Zeng, Z. Fan, J. Liu, H. Zhang, Graphene-based electrodes. Adv. Mater. 24(45), 5979–6004 (2012). https://doi.org/10.1002/adma.201201587
  102. H. Lv, H. Wu, J. Liu, J. Yu, J. Niu et al., High carrier mobility in suspended-channel graphene field effect transistors. Appl. Phys. Lett. 103(19), 193102 (2013). https://doi.org/10.1063/1.4828835
  103. J.M. Marmolejo-Tejada, J. Velasco-Medina, Review on graphene nanoribbon devices for logic applications. Microelectron. J. 48, 18–38 (2016). https://doi.org/10.1016/j.mejo.2015.11.006
  104. S. Lone, A. Bhardwaj, A.K. Pandit, S. Gupta, S. Mahajan, A review of graphene nanoribbon field-effect transistor structures. J. Electron. Mater. 50(6), 3169–3186 (2021). https://doi.org/10.1007/s11664-021-08859-y
  105. I. Colmiais, V. Silva, J. Borme, P. Alpuim, P.M. Mendes, Towards RF graphene devices: a review. FlatChem 35, 100409 (2022). https://doi.org/10.1016/j.flatc.2022.100409
  106. A. Dimoulas, Silicene and germanene: silicon and germanium in the “flatland.” Microelectron. Eng. 131, 68–78 (2015). https://doi.org/10.1016/j.mee.2014.08.013
  107. Z. Ni, Q. Liu, K. Tang, J. Zheng, J. Zhou et al., Tunable bandgap in silicene and germanene. Nano Lett. 12(1), 113–118 (2012). https://doi.org/10.1021/nl203065e
  108. W. Li, H. Shen, H. Qiu, Y. Shi, X. Wang, Two-dimensional semiconductor transistors and integrated circuits for advanced technology nodes. Nat. Sci. Rev. 11(3), nwae001 (2024). https://doi.org/10.1093/nsr/nwae001
  109. E. Gnani, E. Baravelli, P. Maiorano, A. Gnudi, S. Reggiani et al., Steep-slope devices: prospects and challenges. J. Nano Res. 39, 3–16 (2016). https://doi.org/10.4028/www.scientific.net/jnanor.39.3
  110. J. Lyu, J. Pei, Y. Guo, J. Gong, H. Li, A new opportunity for 2D van der waals heterostructures: making steep-slope transistors. Adv. Mater. 32(2), 1906000 (2020). https://doi.org/10.1002/adma.201906000
  111. U.E. Avci, D.H. Morris, I.A. Young, Tunnel field-effect transistors: prospects and challenges. IEEE J. Electron Devices Soc. 3(3), 88–95 (2015). https://doi.org/10.1109/JEDS.2015.2390591
  112. K.R.N. Karthik, C.K. Pandey, A review of tunnel field-effect transistors for improved ON-state behaviour. SILICON 15(1), 1–23 (2023). https://doi.org/10.1007/s12633-022-02028-4
  113. A.M. Ionescu, H. Riel, Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479(7373), 329–337 (2011). https://doi.org/10.1038/nature10679
  114. N. Oliva, J. Backman, L. Capua, M. Cavalieri, M. Luisier et al., WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake. NPJ 2D Mater. Appl. 4, 5 (2020). https://doi.org/10.1038/s41699-020-0142-2
  115. Y. Lv, W. Qin, C. Wang, L. Liao, X. Liu, Recent advances in low-dimensional heterojunction-based tunnel field effect transistors. Adv. Electron. Mater. 5(1), 1800569 (2019). https://doi.org/10.1002/aelm.201800569
  116. A. Afzalian, E. Akhoundi, G. Gaddemane, R. Duflou, M. Houssa, Advanced DFT–NEGF transport techniques for novel 2-D material and device exploration including HfS2/WSe2 van der waals heterojunction TFET and WTe2/WS2 metal/semiconductor contact. IEEE Trans. Electron Devices 68(11), 5372–5379 (2021). https://doi.org/10.1109/TED.2021.3078412
  117. Y. Balaji, Q. Smets, C.J.L. De La Rosa, A.K.A. Lu, D. Chiappe et al., Tunneling transistors based on MoS2/MoTe2 van der waals heterostructures. IEEE J. Electron Devices Soc. 6, 1048–1055 (2018). https://doi.org/10.1109/JEDS.2018.2815781
  118. T. Roy, M. Tosun, M. Hettick, G.H. Ahn, C. Hu et al., 2D–2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures. Appl. Phys. Lett. 108(8), 083111 (2016). https://doi.org/10.1063/1.4942647
  119. D. Sarkar, X. Xie, W. Liu, W. Cao, J. Kang et al., A subthermionic tunnel field-effect transistor with an atomically thin channel. Nature 526(7571), 91–95 (2015). https://doi.org/10.1038/nature15387
  120. G.H. Shin, B. Koo, H. Park, Y. Woo, J.E. Lee et al., Vertical-tunnel field-effect transistor based on a silicon-MoS2 three-dimensional-two-dimensional heterostructure. ACS Appl. Mater. Interfaces 10(46), 40212–40218 (2018). https://doi.org/10.1021/acsami.8b11396
  121. M. Huang, S. Li, Z. Zhang, X. Xiong, X. Li et al., Multifunctional high-performance van der waals heterostructures. Nat. Nanotechnol. 12(12), 1148–1154 (2017). https://doi.org/10.1038/nnano.2017.208
  122. S. Kim, G. Myeong, W. Shin, H. Lim, B. Kim et al., Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches. Nat. Nanotechnol. 15(3), 203–206 (2020). https://doi.org/10.1038/s41565-019-0623-7
  123. S. Kim, G. Myeong, J. Park, K. Watanabe, T. Taniguchi et al., Monolayer hexagonal boron nitride tunnel barrier contact for low-power black phosphorus heterojunction tunnel field-effect transistors. Nano Lett. 20(5), 3963–3969 (2020). https://doi.org/10.1021/acs.nanolett.0c01115
  124. W. Cao, K. Banerjee, Is negative capacitance FET a steep-slope logic switch? Nat. Commun. 11(1), 196 (2020). https://doi.org/10.1038/s41467-019-13797-9
  125. W.-X. You, P. Su, C. Hu, Evaluation of NC-FinFET based subsystem-level logic circuits. IEEE Trans. Electron Devices 66(4), 2004–2009 (2019). https://doi.org/10.1109/TED.2019.2898445
  126. V. Chauhan, D.P. Samajdar, Recent advances in negative capacitance FinFETs for low-power applications: a review. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 68(10), 3056–3068 (2021). https://doi.org/10.1109/TUFFC.2021.3095616
  127. L. Tu, X. Wang, J. Wang, X. Meng, J. Chu, Ferroelectric negative capacitance field effect transistor. Adv. Electron. Mater. 4(11), 1800231 (2018). https://doi.org/10.1002/aelm.201800231
  128. I. Luk’yanchuk, A. Razumnaya, A. Sené, Y. Tikhonov, V.M. Vinokur, The ferroelectric field-effect transistor with negative capacitance. NPJ Comput. Mater. 8, 52 (2022). https://doi.org/10.1038/s41524-022-00738-2
  129. H.H. Radamson, H. Zhu, Z. Wu, X. He, H. Lin et al., State of the art and future perspectives in advanced CMOS technology. Nanomaterials 10(8), 1555 (2020). https://doi.org/10.3390/nano10081555
  130. R.-S. Chen, Y. Lu, Negative capacitance field effect transistors based on van der waals 2D materials. Small 20(39), 2304445 (2024). https://doi.org/10.1002/smll.202304445
  131. Z.-D. Luo, M.-M. Yang, Y. Liu, M. Alexe, Emerging opportunities for 2D semiconductor/ferroelectric transistor-structure devices. Adv. Mater. 33(12), e2005620 (2021). https://doi.org/10.1002/adma.202005620
  132. X. Wang, Y. Chen, G. Wu, D. Li, L. Tu et al., Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating. NPJ 2D Mater. Appl. 1, 38 (2017). https://doi.org/10.1038/s41699-017-0040-4
  133. Si M, Su C, Jiang C, Conrad NJ, Zhou H et al. (2017) Steep Slope MoS2 2D transistors: negative capacitance and negative differential resistance, Cornell university library 2017
  134. F.A. McGuire, Y.-C. Lin, K. Price, G.B. Rayner, S. Khandelwal et al., Sustained sub-60 mV/decade switching via the negative capacitance effect in MoS2 transistors. Nano Lett. 17(8), 4801–4806 (2017). https://doi.org/10.1021/acs.nanolett.7b01584
  135. R. Khosla, S.K. Sharma, Integration of ferroelectric materials: an ultimate solution for next-generation computing and storage devices. ACS Appl. Electron. Mater. 3(7), 2862–2897 (2021). https://doi.org/10.1021/acsaelm.0c00851
  136. L. Qi, S. Ruan, Y.-J. Zeng, Review on recent developments in 2D ferroelectrics: theories and applications. Adv. Mater. 33(13), 2005098 (2021). https://doi.org/10.1002/adma.202005098
  137. C. Wang, L. You, D. Cobden, J. Wang, Towards two-dimensional van der waals ferroelectrics. Nat. Mater. 22(5), 542–552 (2023). https://doi.org/10.1038/s41563-022-01422-y
  138. X. Wang, P. Yu, Z. Lei, C. Zhu, X. Cao et al., Van der waals negative capacitance transistors. Nat. Commun. 10, 3037 (2019). https://doi.org/10.1038/s41467-019-10738-4
  139. J. Jin, Z. Wang, Z. Peng, H. Liu, K. Peng et al., Multifunctional dual gated coupling device using van der waals ferroelectric heterostructure. Adv. Electron. Mater. 8(9), 2200210 (2022). https://doi.org/10.1002/aelm.202200210
  140. W. Wang, Y. Meng, W. Wang, Y. Zhang, B. Li et al., 2D ferroelectric materials: Emerging paradigms for next-generation ferroelectronics. Mater. Today Electron. 6, 100080 (2023). https://doi.org/10.1016/j.mtelec.2023.100080
  141. S. Song, J. Lyu, L. Qin, Z. Wang, J. Gong et al., Lateral graphene/MoS2 heterostructures for steep-slope Dirac-source field-effect transistors. Phys. Rev. B 110(12), 125407 (2024). https://doi.org/10.1103/physrevb.110.125407
  142. C. Kang, H. Choi, H. Son, T. Kang, S.-M. Lee et al., A steep-switching impact ionization-based threshold switching field-effect transistor. Nanoscale 15(12), 5771–5777 (2023). https://doi.org/10.1039/d2nr06547a
  143. S. Wang, J. Wang, T. Zhi, J. Xue, D. Chen et al., Cold source field-effect transistors: breaking the 60-mV/decade switching limit at room temperature. Phys. Rep. 1013, 1–33 (2023). https://doi.org/10.1016/j.physrep.2023.03.001
  144. L. Zhang, F. Liu, High-throughput approach to explore cold metals for electronic and thermoelectric devices. NPJ Comput. Mater. 10, 78 (2024). https://doi.org/10.1038/s41524-024-01267-w
  145. C. Qiu, F. Liu, L. Xu, B. Deng, M. Xiao et al., Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches. Science 361(6400), 387–392 (2018). https://doi.org/10.1126/science.aap9195
  146. E.G. Marin, D. Marian, M. Perucchini, G. Fiori, G. Iannaccone, Lateral heterostructure field-effect transistors based on two-dimensional material stacks with varying thickness and energy filtering source. ACS Nano 14(2), 1982–1989 (2020). https://doi.org/10.1021/acsnano.9b08489
  147. F. Liu, C. Qiu, Z. Zhang, L.-M. Peng, J. Wang et al., Dirac electrons at the source: breaking the 60-mV/decade switching limit. IEEE Trans. Electron Devices 65(7), 2736–2743 (2018). https://doi.org/10.1109/TED.2018.2836387
  148. Y. Yin, Z. Zhang, C. Shao, J. Robertson, Y. Guo, Computational study of transition metal dichalcogenide cold source MOSFETs with sub-60 mV per decade and negative differential resistance effect. NPJ 2D Mater. Appl. 6, 55 (2022). https://doi.org/10.1038/s41699-022-00332-6
  149. L. Zhang, G. Yao, X. Liu, F. Liu, Three-dimensional cold metals in realizing steep-slope transistors based on monolayer MoS2. IEEE Electron Device Lett. 44(10), 1764–1767 (2023). https://doi.org/10.1109/LED.2023.3305577
  150. Z. Tang, C. Liu, X. Huang, S. Zeng, L. Liu et al., A steep-slope MoS2/graphene Dirac-source field-effect transistor with a large drive current. Nano Lett. 21(4), 1758–1764 (2021). https://doi.org/10.1021/acs.nanolett.0c04657
  151. H. Zhu, Y. Yang, X. Zhu, P. Raju, D.E. Ioannou et al., Graphene-integrated negative quantum capacitance field-effect transistor with sub-60-mV/dec switching. IEEE Trans. Electron Devices 70(9), 4899–4904 (2023). https://doi.org/10.1109/TED.2023.3294365
  152. Y. Liu, J. Guo, W. Song, P. Wang, V. Gambin et al., Ultra-steep slope impact ionization transistors based on graphene/InAs heterostructures. Small Struct. 2(1), 2000039 (2021). https://doi.org/10.1002/sstr.202000039
  153. H. Choi, J. Li, T. Kang, C. Kang, H. Son et al., A steep switching WSe2 impact ionization field-effect transistor. Nat. Commun. 13, 6076 (2022). https://doi.org/10.1038/s41467-022-33770-3
  154. A. Gao, Z. Zhang, L. Li, B. Zheng, C. Wang et al., Robust impact-ionization field-effect transistor based on nanoscale vertical graphene/black phosphorus/indium selenide heterostructures. ACS Nano 14(1), 434–441 (2020). https://doi.org/10.1021/acsnano.9b06140
  155. B. Yuan, Z. Chen, Y. Chen, C. Tang, W. Chen et al., High drain field impact ionization transistors as ideal switches. Nat. Commun. 15, 9038 (2024). https://doi.org/10.1038/s41467-024-53337-8
  156. T. Kang, H. Choi, J. Li, C. Kang, E. Hwang et al., Anisotropy of impact ionization in WSe2 field effect transistors. Nano Converg. 10(1), 13 (2023). https://doi.org/10.1186/s40580-023-00361-x
  157. U.K. Das, T.K. Bhattacharyya, Opportunities in device scaling for 3-nm node and beyond: FinFET versus GAA-FET versus UFET. IEEE Trans. Electron Devices 67(6), 2633–2638 (2020). https://doi.org/10.1109/TED.2020.2987139
  158. G.V. Angelov, D.N. Nikolov, M.H. Hristov, Technology and modeling of nonclassical transistor devices. J. Electr. Comput. Eng. 2019, 4792461 (2019). https://doi.org/10.1155/2019/4792461
  159. K. Majumdar, C. Hobbs, P.D. Kirsch, Benchmarking transition metal dichalcogenide MOSFET in the ultimate physical scaling limit. IEEE Electron Device Lett. 35(3), 402–404 (2014). https://doi.org/10.1109/LED.2014.2300013
  160. Chen MC, Li KS, Li LJ, Lu AY, Li MY et al. (2015) TMD FinFET with 4 nm thin body and back gate control for future low power technology. In: 2015 IEEE international electron devices meeting (IEDM). December 7–9, 2015, Washington, DC, USA. IEEE, 32.2.1–32.2.4
  161. Y. Pan, H. Yin, K. Huang, Z. Zhang, Q. Zhang et al., Novel 10-nm gate length MoS2 transistor fabricated on Si fin substrate. IEEE J. Electron Devices Soc. 7, 483–488 (2019). https://doi.org/10.1109/JEDS.2019.2910271
  162. M.-L. Chen, X. Sun, H. Liu, H. Wang, Q. Zhu et al., A FinFET with one atomic layer channel. Nat. Commun. 11(1), 1205 (2020). https://doi.org/10.1038/s41467-020-15096-0
  163. C. Tan, M. Yu, J. Tang, X. Gao, Y. Yin et al., 2D fin field-effect transistors integrated with epitaxial high-k gate oxide. Nature 616(7955), 66–72 (2023). https://doi.org/10.1038/s41586-023-05797-z
  164. Zhou R, Appenzeller J (2018) Three-dimensional integration of multi-channel MoS2 devices for high drive current FETs. In: 2018 76th device research conference (DRC). June 24-27, 2018, Santa Barbara, CA, USA. IEEE, pp 1–2
  165. Ahmed F, Paul R, Saha JK (2020) Comparative performance analysis of TMD based multi-bridge channel field effect transistor. In: 2020 IEEE 10th international conference nanomaterials: applications & properties (NAP). November 9–13, 2020. Sumy, Ukraine. IEEE, 01TPNS04-1-01TPNS04-5. https://doi.org/10.1109/nap51477.2020.9309688
  166. Huang X, Liu C, Tang Z, Zeng S, Liu L et al. (2020) High drive and low leakage current MBC FET with channel thickness 1.2nm/0.6nm. In: 2020 IEEE international electron devices meeting (IEDM). December 12–18, 2020, San Francisco, CA, USA. IEEE, 12.1.1–12.1.4
  167. S. Hitesh, P. Dasika, K. Watanabe, T. Taniguchi, K. Majumdar, Integration of 3-level MoS multibridge channel FET with 2D layered contact and gate dielectric. IEEE Electron Device Lett. 43(11), 1993–1996 (2022). https://doi.org/10.1109/LED.2022.3206866
  168. Y. Xia, L. Zong, Y. Pan, X. Chen, L. Zhou et al., Wafer-scale demonstration of MBC-FET and C-FET arrays based on two-dimensional semiconductors. Small 18(20), 2107650 (2022). https://doi.org/10.1002/smll.202107650
  169. Xiong X, Tong A, Wang X, Liu S, Li X et al. (2021) Demonstration of vertically-stacked CVD monolayer channels: MoS2 nanosheets GAA-FET with Ion>700 µA/µm and MoS2/WSe2 CFET. In: 2021 IEEE international electron devices meeting (IEDM). December 11–16, 2021, San Francisco, CA, USA. IEEE, 7.5.1–7.5.4
  170. J. Ma, H. Liu, N. Yang, J. Zou, S. Lin et al., Circuit-level memory technologies and applications based on 2D materials. Adv. Mater. 34(48), e2202371 (2022). https://doi.org/10.1002/adma.202202371
  171. C.U. Kshirsagar, W. Xu, Y. Su, M.C. Robbins, C.H. Kim et al., Dynamic memory cells using MoS2 field-effect transistors demonstrating femtoampere leakage currents. ACS Nano 10(9), 8457–8464 (2016). https://doi.org/10.1021/acsnano.6b03440
  172. Y. Wang, H. Tang, Y. Xie, X. Chen, S. Ma et al., An in-memory computing architecture based on two-dimensional semiconductors for multiply-accumulate operations. Nat. Commun. 12(1), 3347 (2021). https://doi.org/10.1038/s41467-021-23719-3
  173. M. Raoofi, M. Gholipour, Transition metal dichalcogenide FET-based dynamic random-access memory. Int. J. Circuit Theory Appl. 53(3), 1764–1774 (2025). https://doi.org/10.1002/cta.4173
  174. H. Wang, L. Yu, Y.-H. Lee, Y. Shi, A. Hsu et al., Integrated circuits based on bilayer MoS2 transistors. Nano Lett. 12(9), 4674–4680 (2012). https://doi.org/10.1021/nl302015v
  175. Pang CS, Thakuria N, Gupta SK, Chen Z (2018) First demonstration of WSe2 based CMOS-SRAM. In: 2018 IEEE international electron devices meeting (IEDM). December 1–5, 2018, San Francisco, CA, USA. IEEE, 22.2.1–22.2.4
  176. Li J, Zhou P, Li J, Ding Y, Liu C et al. (2019) Highly area-efficient low-power SRAM cell with 2 transistors and 2 resistors. In: 2019 IEEE international electron devices meeting (IEDM). December 7–11, 2019. San Francisco, CA, USA. IEEE, 23.3.1–23.3.4. https://doi.org/10.1109/iedm19573.2019.8993520
  177. F. Wang, J. Li, Z. Zhang, Y. Ding, Y. Xiong et al., Multifunctional computing-in-memory SRAM cells based on two-surface-channel MoS2 transistors. iScience 24(10), 103138 (2021). https://doi.org/10.1016/j.isci.2021.103138
  178. N. Li, Q. Wang, C. Shen, Z. Wei, H. Yu et al., Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors. Nat. Electron. 3(11), 711–717 (2020). https://doi.org/10.1038/s41928-020-00475-8
  179. Y.C. Lu, J.K. Huang, K.Y. Chao, L.J. Li, V.P. Hu, Projected performance of Si- and 2D-material-based SRAM circuits ranging from 16 nm to 1 nm technology nodes. Nat. Nanotechnol. 19(7), 1066–1072 (2024). https://doi.org/10.1038/s41565-024-01693-3
  180. L. Liu, C. Liu, L. Jiang, J. Li, Y. Ding et al., Ultrafast non-volatile flash memory based on van der Waals heterostructures. Nat. Nanotechnol. 16(8), 874–881 (2021). https://doi.org/10.1038/s41565-021-00921-4
  181. S. Bertolazzi, D. Krasnozhon, A. Kis, Nonvolatile memory cells based on MoS2/graphene heterostructures. ACS Nano 7(4), 3246–3252 (2013). https://doi.org/10.1021/nn3059136
  182. M.S. Choi, G.H. Lee, Y.J. Yu, D.Y. Lee, S.H. Lee et al., Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices. Nat. Commun. 4, 1624 (2013). https://doi.org/10.1038/ncomms2652
  183. Q. Feng, F. Yan, W. Luo, K. Wang, Charge trap memory based on few-layer black phosphorus. Nanoscale 8(5), 2686–2692 (2016). https://doi.org/10.1039/c5nr08065g
  184. H. Wang, H. Guo, R. Guzman, N. JiaziLa, K. Wu et al., Ultrafast non-volatile floating-gate memory based on all-2D materials. Adv. Mater. 36(24), e2311652 (2024). https://doi.org/10.1002/adma.202311652
  185. S.S. Kim, S.K. Yong, W. Kim, S. Kang, H.W. Park et al., Review of semiconductor flash memory devices for material and process issues. Adv. Mater. 35(43), 2200659 (2023). https://doi.org/10.1002/adma.202200659
  186. G. Dastgeer, S. Nisar, A. Rasheed, K. Akbar, V.D. Chavan et al., Atomically engineered, high-speed non-volatile flash memory device exhibiting multibit data storage operations. Nano Energy 119, 109106 (2024). https://doi.org/10.1016/j.nanoen.2023.109106
  187. C. Li, X. Chen, Z. Zhang, X. Wu, T. Yu et al., Charge-selective 2D heterointerface-driven multifunctional floating gate memory for in situ sensing-memory-computing. Nano Lett. 24(47), 15025–15034 (2024). https://doi.org/10.1021/acs.nanolett.4c03828
  188. T.P.A. Bach, S. Cho, H. Kim, D.A. Nguyen, H. Im, 2D van der waals heterostructure with tellurene floating-gate for wide range and multi-bit optoelectronic memory. ACS Nano 18(5), 4131–4139 (2024). https://doi.org/10.1021/acsnano.3c08567
  189. X. Huang, C. Liu, Y.-G. Jiang, P. Zhou, In-memory computing to break the memory wall. Chin. Phys. B 29(7), 078504 (2020). https://doi.org/10.1088/1674-1056/ab90e7
  190. H. Abbas, Y. Abbas, S.N. Truong, K.-S. Min, M.R. Park et al., A memristor crossbar array of titanium oxide for non-volatile memory and neuromorphic applications. Semicond. Sci. Technol. 32(6), 065014 (2017). https://doi.org/10.1088/1361-6641/aa6a3a
  191. W. Wang, F. Yin, H. Niu, Y. Li, E.S. Kim et al., Tantalum pentoxide (Ta2O5 and Ta2O5-x)-based memristor for photonic in-memory computing application. Nano Energy 106, 108072 (2023). https://doi.org/10.1016/j.nanoen.2022.108072
  192. B. Mohammad, M.A. Jaoude, V. Kumar, D.M. Al Homouz, H. Abu Nahla et al., State of the art of metal oxide memristor devices. Nanotechnol. Rev. 5(3), 311–329 (2016). https://doi.org/10.1515/ntrev-2015-0029
  193. M. Xu, X. Mai, J. Lin, W. Zhang, Y. Li et al., Recent advances on neuromorphic devices based on chalcogenide phase-change materials. Adv. Funct. Mater. 30(50), 2003419 (2020). https://doi.org/10.1002/adfm.202003419
  194. M. Wang, S. Cai, C. Pan, C. Wang, X. Lian et al., Robust memristors based on layered two-dimensional materials. Nat. Electron. 1(2), 130–136 (2018). https://doi.org/10.1038/s41928-018-0021-4
  195. J. Xie, S. Afshari, I. Sanchez Esqueda, Hexagonal boron nitride (h-BN) memristor arrays for analog-based machine learning hardware. NPJ 2D Mater. Appl. 6, 50 (2022). https://doi.org/10.1038/s41699-022-00328-2
  196. H. Zhou, V. Sorkin, S. Chen, Z. Yu, K.-W. Ang et al., Design-dependent switching mechanisms of Schottky-barrier-modulated memristors based on 2D semiconductor. Adv. Electron. Mater. 9(6), 2201252 (2023). https://doi.org/10.1002/aelm.202201252
  197. Y. Qiao, T. Hirtz, F. Wu, G. Deng, X. Li et al., Fabricating molybdenum disulfide memristors. ACS Appl. Electron. Mater. 2(2), 346–370 (2020). https://doi.org/10.1021/acsaelm.9b00655
  198. H. Zhou, S. Li, K.-W. Ang, Y.-W. Zhang, Recent advances in in-memory computing: exploring memristor and memtransistor arrays with 2D materials. Nano-Micro Lett. 16(1), 121 (2024). https://doi.org/10.1007/s40820-024-01335-2
  199. S.-C. Tsai, H.-Y. Lo, C.-Y. Huang, M.-C. Wu, Y.-T. Tseng et al., Structural analysis and performance in a dual-mechanism conductive filament memristor. Adv. Electron. Mater. 7(10), 2100605 (2021). https://doi.org/10.1002/aelm.202100605
  200. K. Tang, Y. Wang, C. Gong, C. Yin, M. Zhang et al., Electronic and photoelectronic memristors based on 2D materials. Adv. Electron. Mater. 8(4), 2101099 (2022). https://doi.org/10.1002/aelm.202101099
  201. C. Fernandes, A. Santa, Â. Santos, P. Bahubalindruni, J. Deuermeier et al., A sustainable approach to flexible electronics with zinc-tin oxide thin-film transistors. Adv. Electron. Mater. 4(7), 1800032 (2018). https://doi.org/10.1002/aelm.201800032
  202. S. Park, M. Vosguerichian, Z. Bao, A review of fabrication and applications of carbon nanotube film-based flexible electronics. Nanoscale 5(5), 1727–1752 (2013). https://doi.org/10.1039/C3NR33560G
  203. A.K. Katiyar, A.T. Hoang, D. Xu, J. Hong, B.J. Kim et al., 2D materials in flexible electronics: recent advances and future prospectives. Chem. Rev. 124(2), 318–419 (2024). https://doi.org/10.1021/acs.chemrev.3c00302
  204. R.C. Andrew, R.E. Mapasha, A.M. Ukpong, N. Chetty, Mechanical properties of graphene and boronitrene. Phys. Rev. B 85(12), 125428 (2012). https://doi.org/10.1103/physrevb.85.125428
  205. I.-J. Park, T.I. Kim, S. Kang, G.W. Shim, Y. Woo et al., Stretchable thin-film transistors with molybdenum disulfide channels and graphene electrodes. Nanoscale 10(34), 16069–16078 (2018). https://doi.org/10.1039/c8nr03173h
  206. S. Das, R. Gulotty, A.V. Sumant, A. Roelofs, All two-dimensional, flexible, transparent, and thinnest thin film transistor. Nano Lett. 14(5), 2861–2866 (2014). https://doi.org/10.1021/nl5009037
  207. A. Daus, S. Vaziri, V. Chen, Ç. Köroğlu, R.W. Grady et al., High-performance flexible nanoscale transistors based on transition metal dichalcogenides. Nat. Electron. 4(7), 495–501 (2021). https://doi.org/10.1038/s41928-021-00598-6
  208. N. Huo, G. Konstantatos, Recent progress and future prospects of 2D-based photodetectors. Adv. Mater. 30(51), e1801164 (2018). https://doi.org/10.1002/adma.201801164
  209. D. De Fazio, I. Goykhman, D. Yoon, M. Bruna, A. Eiden et al., High responsivity, large-area graphene/MoS2 flexible photodetectors. ACS Nano 10(9), 8252–8262 (2016). https://doi.org/10.1021/acsnano.6b05109
  210. J.S. Ko, D.H. Shin, W.J. Lee, C.W. Jang, S. Kim et al., All-two-dimensional semitransparent and flexible photodetectors employing graphene/MoS2/graphene vertical heterostructures. J. Alloys Compd. 864, 158118 (2021). https://doi.org/10.1016/j.jallcom.2020.158118
  211. C. An, F. Nie, R. Zhang, X. Ma, D. Wu et al., Two-dimensional material-enhanced flexible and self-healable photodetector for large-area photodetection. Adv. Funct. Mater. 31(22), 2100136 (2021). https://doi.org/10.1002/adfm.202100136
  212. T. Dong, J. Simões, Z. Yang, Flexible photodetector based on 2D materials: processing, architectures, and applications. Adv. Mater. Interfaces 7(4), 1901657 (2020). https://doi.org/10.1002/admi.201901657
  213. A. Abbas, Y. Luo, W. Ahmad, M. Mustaqeem, L. Kong et al., Recent progress, challenges, and opportunities in 2D materials for flexible displays. Nano Today 56, 102256 (2024). https://doi.org/10.1016/j.nantod.2024.102256
  214. H. Jiang, L. Zheng, Z. Liu, X. Wang, Two-dimensional materials: From mechanical properties to flexible mechanical sensors. InfoMat 2(6), 1077–1094 (2020). https://doi.org/10.1002/inf2.12072
  215. R. Cheng, S. Jiang, Y. Chen, Y. Liu, N. Weiss et al., Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics. Nat. Commun. 5, 5143 (2014). https://doi.org/10.1038/ncomms6143
  216. M. Amani, R.A. Burke, R.M. Proie, M. Dubey, Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene. Nanotechnology 26(11), 115202 (2015). https://doi.org/10.1088/0957-4484/26/11/115202
  217. Y. Woo, W. Hong, S.Y. Yang, H.J. Kim, J.-H. Cha et al., Large-area CVD-grown MoS2 driver circuit array for flexible organic light-emitting diode display. Adv. Electron. Mater. 4(11), 1800251 (2018). https://doi.org/10.1002/aelm.201800251
  218. S.J. Kim, K. Choi, B. Lee, Y. Kim, B.H. Hong, Materials for flexible, stretchable electronics: graphene and 2D materials. Annu. Rev. Mater. Res. 45, 63–84 (2015). https://doi.org/10.1146/annurev-matsci-070214-020901
  219. L. Gao, Flexible device applications of 2D semiconductors. Small 13(35), 1603994 (2017). https://doi.org/10.1002/smll.201603994
  220. D. Tyagi, H. Wang, W. Huang, L. Hu, Y. Tang et al., Recent advances in two-dimensional-material-based sensing technology toward health and environmental monitoring applications. Nanoscale 12(6), 3535–3559 (2020). https://doi.org/10.1039/C9NR10178K
  221. Y. Xu, X. Hu, S. Kundu, A. Nag, N. Afsarimanesh et al., Silicon-based sensors for biomedical applications: a review. Sensors 19(13), 2908 (2019). https://doi.org/10.3390/s19132908
  222. S. Varghese, S. Varghese, S. Swaminathan, K. Singh, V. Mittal, Two-dimensional materials for sensing: graphene and beyond. Electronics 4(3), 651–687 (2015). https://doi.org/10.3390/electronics4030651
  223. F. Schedin, A.K. Geim, S.V. Morozov, E.W. Hill, P. Blake et al., Detection of individual gas molecules adsorbed on graphene. Nat. Mater. 6(9), 652–655 (2007). https://doi.org/10.1038/nmat1967
  224. M. Rodner, D. Puglisi, S. Ekeroth, U. Helmersson, I. Shtepliuk et al., Graphene decorated with iron oxide nanops for highly sensitive interaction with volatile organic compounds. Sensors 19(4), 918 (2019). https://doi.org/10.3390/s19040918
  225. A.N. Abbas, B. Liu, L. Chen, Y. Ma, S. Cong et al., Black phosphorus gas sensors. ACS Nano 9(5), 5618–5624 (2015). https://doi.org/10.1021/acsnano.5b01961
  226. Z. Liu, J. Huang, Q. Wang, J. Zhou, J. Ye et al., Indium oxide-black phosphorus composites for ultrasensitive nitrogen dioxide sensing at room temperature. Sens. Actuat. B Chem. 308, 127650 (2020). https://doi.org/10.1016/j.snb.2019.127650
  227. G. Deokar, P. Vancsó, R. Arenal, F. Ravaux, J. Casanova-Cháfer et al., MoS2–carbon nanotube hybrid material growth and gas sensing. Adv. Mater. Interfaces 4(24), 1700801 (2017). https://doi.org/10.1002/admi.201700801
  228. T. Järvinen, G.S. Lorite, J. Peräntie, G. Toth, S. Saarakkala et al., WS2 and MoS2 thin film gas sensors with high response to NH3 in air at low temperature. Nanotechnology 30(40), 405501 (2019). https://doi.org/10.1088/1361-6528/ab2d48
  229. X. Chen, S. Hao, B. Zong, C. Liu, S. Mao, Ultraselective antibiotic sensing with complementary strand DNA assisted aptamer/MoS2 field-effect transistors. Biosens. Bioelectron. 145, 111711 (2019). https://doi.org/10.1016/j.bios.2019.111711
  230. T. Pham, G. Li, E. Bekyarova, M.E. Itkis, A. Mulchandani, MoS2-based optoelectronic gas sensor with sub-parts-per-billion limit of NO2 gas detection. ACS Nano 13(3), 3196–3205 (2019). https://doi.org/10.1021/acsnano.8b08778
  231. W. Zhao, R. Yan, H. Li, K. Ding, Y. Chen et al., Highly sensitive NO2 gas sensor with a low detection limit based on Pt-modified MoS2 flakes. Mater. Lett. 330, 133386 (2023). https://doi.org/10.1016/j.matlet.2022.133386
  232. Q. Li, Y. Cen, J. Huang, X. Li, H. Zhang et al., Zinc oxide-black phosphorus composites for ultrasensitive nitrogen dioxide sensing. Nanoscale Horiz. 3(5), 525–531 (2018). https://doi.org/10.1039/c8nh00052b
  233. M.R. Mohammadzadeh, A. Hasani, T. Hussain, H. Ghanbari, M. Fawzy et al., Enhanced sensitivity in photovoltaic 2D MoS2/Te heterojunction VOC sensors. Small 20(49), e2402464 (2024). https://doi.org/10.1002/smll.202402464
  234. K. Zhu, C. Wen, A.A. Aljarb, F. Xue, X. Xu et al., The development of integrated circuits based on two-dimensional materials. Nat. Electron. 4(11), 775–785 (2021). https://doi.org/10.1038/s41928-021-00672-z
  235. X. Huang, C. Liu, P. Zhou, 2D semiconductors for specific electronic applications: from device to system. NPJ 2D Mater. Appl. 6, 51 (2022). https://doi.org/10.1038/s41699-022-00327-3
  236. B. Radisavljevic, M.B. Whitwick, A. Kis, Integrated circuits and logic operations based on single-layer MoS2. ACS Nano 5(12), 9934–9938 (2011). https://doi.org/10.1021/nn203715c
  237. H.S. Song, S.L. Li, L. Gao, Y. Xu, K. Ueno et al., High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits. Nanoscale 5(20), 9666–9670 (2013). https://doi.org/10.1039/C3NR01899G
  238. M. Tosun, S. Chuang, H. Fang, A.B. Sachid, M. Hettick et al., High-gain inverters based on WSe2 complementary field-effect transistors. ACS Nano 8(5), 4948–4953 (2014). https://doi.org/10.1021/nn5009929
  239. Y. Liu, K.-W. Ang, Monolithically integrated flexible black phosphorus complementary inverter circuits. ACS Nano 11(7), 7416–7423 (2017). https://doi.org/10.1021/acsnano.7b03703
  240. Y.J. Park, A.K. Katiyar, A.T. Hoang, J.-H. Ahn, Controllable P- and N-type conversion of MoTe2 via oxide interfacial layer for logic circuits. Small 15(28), 1901772 (2019). https://doi.org/10.1002/smll.201901772
  241. C.-Y. Lin, K.B. Simbulan, C.-J. Hong, K.-S. Li, Y.-L. Zhong et al., Polarity-controllable MoS2 transistor for adjustable complementary logic inverter applications. Nanoscale Horiz. 5(1), 163–170 (2020). https://doi.org/10.1039/c9nh00275h
  242. L. Chen, S. Li, X. Feng, L. Wang, X. Huang et al., Gigahertz integrated circuits based on complementary black phosphorus transistors. Adv. Electron. Mater. 4(9), 1800274 (2018). https://doi.org/10.1002/aelm.201800274
  243. A. Dathbun, Y. Kim, S. Kim, Y. Yoo, M.S. Kang et al., Large-area CVD-grown sub-2 V ReS2 transistors and logic gates. Nano Lett. 17(5), 2999–3005 (2017). https://doi.org/10.1021/acs.nanolett.7b00315
  244. J. Kwon, Y. Shin, H. Kwon, J.Y. Lee, H. Park et al., All-2D ReS2 transistors with split gates for logic circuitry. Sci. Rep. 9(1), 10354 (2019). https://doi.org/10.1038/s41598-019-46730-7
  245. Z. Lin, Y. Liu, U. Halim, M. Ding, Y. Liu et al., Solution-processable 2D semiconductors for high-performance large-area electronics. Nature 562(7726), 254–258 (2018). https://doi.org/10.1038/s41586-018-0574-4
  246. H. Lee, K. Lee, Y. Kim, H. Ji, J. Choi et al., Transfer of transition-metal dichalcogenide circuits onto arbitrary substrates for flexible device applications. Nanoscale 11(45), 22118–22124 (2019). https://doi.org/10.1039/C9NR05065E
  247. M.-H. Chuang, K.-C. Chiu, Y.-T. Lin, G. Tulevski, P.-H. Chen et al., Integrated low-dimensional semiconductors for scalable low-power CMOS logic. Adv. Funct. Mater. 33(27), 2212722 (2023). https://doi.org/10.1002/adfm.202212722
  248. L. Tong, J. Wan, K. Xiao, J. Liu, J. Ma, X. Guo, L. Zhou, X. Chen, Y. Xia, S. Dai, X. Zihan, W. Bao, P. Zhou, Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide. Nat. Electron. (2022). https://doi.org/10.1038/s41928-022-00881-0
  249. D. Fan, W. Li, H. Qiu, Y. Xu, S. Gao et al., Two-dimensional semiconductor integrated circuits operating at gigahertz frequencies. Nat. Electron. 6(11), 879–887 (2023). https://doi.org/10.1038/s41928-023-01052-5
  250. X. Jia, Z. Cheng, B. Han, X. Cheng, Q. Wang et al., High-performance CMOS inverter array with monolithic 3D architecture based on CVD-grown n-MoS2 and p-MoTe2. Small 19(19), 2207927 (2023). https://doi.org/10.1002/smll.202207927
  251. M. Liu, J. Niu, G. Yang, K. Chen, W. Lu et al., Large-scale ultrathin channel nanosheet-stacked CFET based on CVD 1L MoS2/WSe2. Adv. Electron. Mater. 9(2), 2200722 (2023). https://doi.org/10.1002/aelm.202200722
  252. X. Wei, X. Zhang, H. Yu, L. Gao, W. Tang et al., Homojunction-loaded inverters based on self-biased molybdenum disulfide transistors for sub-picowatt computing. Nat. Electron. 7(2), 138–146 (2024). https://doi.org/10.1038/s41928-023-01112-w
  253. J. Tang, Q. Wang, Z. Wei, C. Shen, X. Lu et al., Vertical integration of 2D building blocks for all-2D electronics. Adv. Electron. Mater. 6(12), 2000550 (2020). https://doi.org/10.1002/aelm.202000550
  254. Xi F, Sharma H, Wu X, Schram T, Cott D et al. (2024) Integration of GAA monolayer MoS2 nanosheet FETs with gate first process for future 2D CFET scaling. In: 2024 IEEE European solid-state electronics research conference (ESSERC). September 9–12, 2024, Bruges, Belgium. IEEE, pp 121–124
  255. M. Xie, Y. Jia, C. Nie, Z. Liu, A. Tang et al., Monolithic 3D integration of 2D transistors and vertical RRAMs in 1T–4R structure for high-density memory. Nat. Commun. 14(1), 5952 (2023). https://doi.org/10.1038/s41467-023-41736-2
  256. J.-H. Kang, H. Shin, K.S. Kim, M.-K. Song, D. Lee et al., Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions. Nat. Mater. 22(12), 1470–1477 (2023). https://doi.org/10.1038/s41563-023-01704-z
  257. R. Pendurthi, N.U. Sakib, M.U.K. Sadaf, Z. Zhang, Y. Sun et al., Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors. Nat. Nanotechnol. 19(7), 970–977 (2024). https://doi.org/10.1038/s41565-024-01705-2
  258. S. Ghosh, Y. Zheng, Z. Zhang, Y. Sun, T.F. Schranghamer et al., Monolithic and heterogeneous three-dimensional integration of two-dimensional materials with high-density vias. Nat. Electron. 7(10), 892–903 (2024). https://doi.org/10.1038/s41928-024-01251-8
  259. D. Ielmini, H.S.P. Wong, In-memory computing with resistive switching devices. Nat. Electron. 1(6), 333–343 (2018). https://doi.org/10.1038/s41928-018-0092-2
  260. L. Yin, R. Cheng, Z. Wang, F. Wang, M.G. Sendeku et al., Two-dimensional unipolar memristors with logic and memory functions. Nano Lett. 20(6), 4144–4152 (2020). https://doi.org/10.1021/acs.nanolett.0c00002
  261. S. Chakrabarti, A. Wali, H. Ravichandran, S. Kundu, T.F. Schranghamer et al., Logic locking of integrated circuits enabled by nanoscale MoS2-based memtransistors. ACS Appl. Nano Mater. 5(10), 14447–14455 (2022). https://doi.org/10.1021/acsanm.2c02807
  262. B. Tang, H. Veluri, Y. Li, Z.G. Yu, M. Waqar et al., Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing. Nat. Commun. 13(1), 3037 (2022). https://doi.org/10.1038/s41467-022-30519-w
  263. Y. Li, L. Loh, S. Li, L. Chen, B. Li et al., Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries. Nat. Electron. 4(5), 348–356 (2021). https://doi.org/10.1038/s41928-021-00573-1
  264. C. Liu, H. Chen, X. Hou, H. Zhang, J. Han et al., Small footprint transistor architecture for photoswitching logic and in situ memory. Nat. Nanotechnol. 14(7), 662–667 (2019). https://doi.org/10.1038/s41565-019-0462-6
  265. S. Wachter, D.K. Polyushkin, O. Bethge, T. Mueller, A microprocessor based on a two-dimensional semiconductor. Nat. Commun. 8, 14948 (2017). https://doi.org/10.1038/ncomms14948
  266. X. Chen, Y. Xie, Y. Sheng, H. Tang, Z. Wang et al., Wafer-scale functional circuits based on two dimensional semiconductors with fabrication optimized by machine learning. Nat. Commun. 12(1), 5953 (2021). https://doi.org/10.1038/s41467-021-26230-x
  267. S. Zeng, C. Liu, X. Huang, Z. Tang, L. Liu et al., An application-specific image processing array based on WSe2 transistors with electrically switchable logic functions. Nat. Commun. 13(1), 56 (2022). https://doi.org/10.1038/s41467-021-27644-3
  268. D.K. Polyushkin, S. Wachter, L. Mennel, M. Paur, M. Paliy et al., Analogue two-dimensional semiconductor electronics. Nat. Electron. 3(8), 486–491 (2020). https://doi.org/10.1038/s41928-020-0460-6
  269. J. Tang, Q. Wang, J. Tian, X. Li, N. Li et al., Low power flexible monolayer MoS2 integrated circuits. Nat. Commun. 14, 3633 (2023). https://doi.org/10.1038/s41467-023-39390-9
  270. Y. Peng, C. Cui, L. Li, Y. Wang, Q. Wang et al., Medium-scale flexible integrated circuits based on 2D semiconductors. Nat. Commun. 15(1), 10833 (2024). https://doi.org/10.1038/s41467-024-55142-9
  271. G. Migliato Marega, Y. Zhao, A. Avsar, Z. Wang, M. Tripathi et al., Logic-in-memory based on an atomically thin semiconductor. Nature 587(7832), 72–77 (2020). https://doi.org/10.1038/s41586-020-2861-0
  272. Q. Huo, Y. Yang, Y. Wang, D. Lei, X. Fu et al., A computing-in-memory macro based on three-dimensional resistive random-access memory. Nat. Electron. 5(7), 469–477 (2022). https://doi.org/10.1038/s41928-022-00795-x
  273. A. Dodda, N. Trainor, J.M. Redwing, S. Das, All-in-one, bio-inspired, and low-power crypto engines for near-sensor security based on two-dimensional memtransistors. Nat. Commun. 13(1), 3587 (2022). https://doi.org/10.1038/s41467-022-31148-z
  274. P. Kumar, K. Zhu, X. Gao, S.D. Wang, M. Lanza, C.S. Thakur, Hybrid architecture based on two-dimensional memristor crossbar array and CMOS integrated circuit for edge computing. NPJ 2D Mater. Appl. 6(1), 8 (2022). https://doi.org/10.1038/s41699-021-00284-3
  275. Y. Liu, H. Tian, F. Wu, A. Liu, Y. Li et al., Cellular automata imbedded memristor-based recirculated logic in-memory computing. Nat. Commun. 14(1), 2695 (2023). https://doi.org/10.1038/s41467-023-38299-7
  276. A. Dodda, D. Jayachandran, A. Pannone, N. Trainor, S.P. Stepanoff et al., Active pixel sensor matrix based on monolayer MoS2 phototransistor array. Nat. Mater. 21(12), 1379–1387 (2022). https://doi.org/10.1038/s41563-022-01398-9
  277. R. Pendurthi, D. Jayachandran, A. Kozhakhmetov, N. Trainor, J.A. Robinson et al., Heterogeneous integration of atomically thin semiconductors for non-von Neumann CMOS. Small 18(33), e2202590 (2022). https://doi.org/10.1002/smll.202202590
  278. S. Wang, X. Liu, M. Xu, L. Liu, D. Yang et al., Two-dimensional devices and integration towards the silicon lines. Nat. Mater. 21(11), 1225–1239 (2022). https://doi.org/10.1038/s41563-022-01383-2
  279. Y.-M. Lin, A. Valdes-Garcia, S.-J. Han, D.B. Farmer, I. Meric et al., Wafer-scale graphene integrated circuit. Science 332(6035), 1294–1297 (2011). https://doi.org/10.1126/science.1204428
  280. O. Habibpour, Z.S. He, W. Strupinski, N. Rorsman, H. Zirath, Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication. Sci. Rep. 7, 41828 (2017). https://doi.org/10.1038/srep41828
  281. A. Dodda, S. Subbulakshmi Radhakrishnan, T.F. Schranghamer, D. Buzzell, P. Sengupta et al., Graphene-based physically unclonable functions that are reconfigurable and resilient to machine learning attacks. Nat. Electron. 4(5), 364–374 (2021). https://doi.org/10.1038/s41928-021-00569-x
  282. K.P. Soundarapandian, S. Castilla, S.M. Koepfli, S. Marconi, L. Kulmer et al., High-speed graphene-based sub-terahertz receivers enabling wireless communications for 6G and beyond. arXiv:2411.02269 (2024). https://doi.org/10.48550/arXiv.2411.02269
  283. A. Pannone, A. Raj, H. Ravichandran, S. Das, Z. Chen et al., Robust chemical analysis with graphene chemosensors and machine learning. Nature 634(8034), 572–578 (2024). https://doi.org/10.1038/s41586-024-08003-w
  284. A. Sebastian, A. Pannone, S. Subbulakshmi Radhakrishnan, S. Das, Gaussian synapses for probabilistic neural networks. Nat. Commun. 10, 4199 (2019). https://doi.org/10.1038/s41467-019-12035-6
  285. S. Das, A. Dodda, S. Das, A biomimetic 2D transistor for audiomorphic computing. Nat. Commun. 10(1), 3450 (2019). https://doi.org/10.1038/s41467-019-11381-9
  286. T.F. Schranghamer, A. Oberoi, S. Das, Graphene memristive synapses for high precision neuromorphic computing. Nat. Commun. 11(1), 5474 (2020). https://doi.org/10.1038/s41467-020-19203-z
  287. D. Jayachandran, A. Oberoi, A. Sebastian, T.H. Choudhury, B. Shankar et al., A low-power biomimetic collision detector based on an in-memory molybdenum disulfide photodetector. Nat. Electron. 3(10), 646–655 (2020). https://doi.org/10.1038/s41928-020-00466-9
  288. S. Ghosh, A. Pannone, D. Sen, A. Wali, H. Ravichandran et al., An all 2D bio-inspired gustatory circuit for mimicking physiology and psychology of feeding behavior. Nat. Commun. 14(1), 6021 (2023). https://doi.org/10.1038/s41467-023-41046-7
  289. M.U.K. Sadaf, N.U. Sakib, A. Pannone, H. Ravichandran, S. Das, A bio-inspired visuotactile neuron for multisensory integration. Nat. Commun. 14(1), 5729 (2023). https://doi.org/10.1038/s41467-023-40686-z
  290. Y. Ding, Y. Cao, X. Luo, E. Shang, S. Hu et al., A device design for 5 nm logic FinFET technology. J. Microelectron. Manuf. 3(1), 1–8 (2019). https://doi.org/10.33079/jomm.20030105
  291. D. Qi, P. Li, H. Ou, D. Wu, W. Lian et al., Graphene-enhanced metal transfer printing for strong van der waals contacts between 3D metals and 2D semiconductors. Adv. Funct. Mater. 33(27), 2301704 (2023). https://doi.org/10.1002/adfm.202301704
  292. N. Kaushik, D. Karmakar, A. Nipane, S. Karande, S. Lodha, Interfacial n-doping using an ultrathin TiO2 layer for contact resistance reduction in MoS2. ACS Appl. Mater. Interfaces 8(1), 256–263 (2016). https://doi.org/10.1021/acsami.5b08559
  293. W. Li, X. Gong, Z. Yu, L. Ma, W. Sun et al., Approaching the quantum limit in two-dimensional semiconductor contacts. Nature 613(7943), 274–279 (2023). https://doi.org/10.1038/s41586-022-05431-4
  294. P.-C. Shen, C. Su, Y. Lin, A.-S. Chou, C.-C. Cheng et al., Ultralow contact resistance between semimetal and monolayer semiconductors. Nature 593(7858), 211–217 (2021). https://doi.org/10.1038/s41586-021-03472-9
  295. J. Jiang, L. Xu, L. Du, L. Li, G. Zhang et al., Yttrium-doping-induced metallization of molybdenum disulfide for ohmic contacts in two-dimensional transistors. Nat. Electron. 7(7), 545–556 (2024). https://doi.org/10.1038/s41928-024-01176-2
  296. L. Kong, R. Wu, Y. Chen, Y. Huangfu, L. Liu et al., Wafer-scale and universal van der Waals metal semiconductor contact. Nat. Commun. 14(1), 1014 (2023). https://doi.org/10.1038/s41467-023-36715-6
  297. X. Zhang, C. Huang, Z. Li, J. Fu, J. Tian et al., Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts. Nat. Commun. 15, 4619 (2024). https://doi.org/10.1038/s41467-024-49058-7
  298. M. Das, D. Sen, N.U. Sakib, H. Ravichandran, Y. Sun et al., High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials. Nat. Electron. 8(1), 24–35 (2024). https://doi.org/10.1038/s41928-024-01265-2
  299. M.J. Mleczko, C. Zhang, H.R. Lee, H.H. Kuo, B. Magyari-Köpe et al., HfSe2 and ZrSe2: two-dimensional semiconductors with native high-κ oxides. Sci. Adv. 3(8), e1700481 (2017). https://doi.org/10.1126/sciadv.1700481
  300. D. Zeng, Z. Zhang, Z. Xue, M. Zhang, P.K. Chu et al., Single-crystalline metal-oxide dielectrics for top-gate 2D transistors. Nature 632(8026), 788–794 (2024). https://doi.org/10.1038/s41586-024-07786-2
  301. Y.Y. Illarionov, A.G. Banshchikov, D.K. Polyushkin, S. Wachter, T. Knobloch et al., Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors. Nat. Electron. 2(6), 230–235 (2019). https://doi.org/10.1038/s41928-019-0256-8
  302. F. Xu, Z. Wu, G. Liu, F. Chen, J. Guo et al., Few-layered MnAl2S4 dielectrics for high-performance van der waals stacked transistors. ACS Appl. Mater. Interfaces 14(22), 25920–25927 (2022). https://doi.org/10.1021/acsami.2c04477
  303. W. Xu, J. Jiang, Y. Chen, N. Tang, C. Jiang et al., Single-crystalline High-κ GdOCl dielectric for two-dimensional field-effect transistors. Nat. Commun. 15(1), 9469 (2024). https://doi.org/10.1038/s41467-024-53907-w
  304. C.-Y. Zhu, M.-R. Zhang, Q. Chen, L.-Q. Yue, R. Song et al., Magnesium niobate as a high-κ gate dielectric for two-dimensional electronics. Nat. Electron. 7(12), 1137–1146 (2024). https://doi.org/10.1038/s41928-024-01245-6
  305. D. Sen, H. Ravichandran, M. Das, P. Venkatram, S. Choo et al., Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO3 nanomembranes at sub-ambient temperatures. Nat. Commun. 15(1), 10739 (2024). https://doi.org/10.1038/s41467-024-54231-z
  306. Z. Lu, Y. Chen, W. Dang, L. Kong, Q. Tao et al., Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration. Nat. Commun. 14(1), 2340 (2023). https://doi.org/10.1038/s41467-023-37887-x
  307. J.H. Ryu, Y.G. You, S.W. Kim, J.H. Hong, J.H. Na et al., Effect of Al2O3 deposition on carrier mobility and ambient stability of few-la
Read More
Author biographies are not available.
Download this PDF file
PDF
Statistic
Read Counter : 0 Download : 0

Most read articles by the same author(s)