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Vol. 10 No. 1 (2018)

A New Method for Fitting Current–Voltage Curves of Planar Heterojunction Perovskite Solar Cells

https://doi.org/10.1007/s40820-017-0159-z
Peizhe Liao
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan 430074, People’s Republic of China
Xiaojuan Zhao
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan 430074, People’s Republic of China
Guolong Li
Ningxia University, Helan Mountain Road 489, Yinchuan 750021, People’s Republic of China
Yan Shen
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan 430074, People’s Republic of China
Mingkui Wang
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan 430074, People’s Republic of China

Corresponding Author: Mingkui Wang

mingkui.wang@mail.hust.edu.cn

Nano-Micro Letters, Vol. 10 No. 1 (2018), Article Number: 5

Abstract

Herein we propose a new equivalent circuit including double heterojunctions in series to simulate the current–voltage characteristic of P–I–N planar structure perovskite solar cells. This new method can theoretically solve the dilemma of the parameter diode ideal factor being larger than 2 from an ideal single heterojunction equivalent circuit, which usually is in the range from 1 to 2. The diode ideal factor reflects PN junction quality, which influences the recombination at electron transport layer/perovskite and perovskite/hole transport layer interface. Based on the double PN junction equivalent circuit, we can also simulate the dark current–voltage curve for analyzing recombination current (Shockley–Read–Hall recombination) and diffusion current (including direct recombination), and thus carrier recombination and transportation characteristics. This new model offers an efficacious and simple method to investigate interfaces condition, film quality of perovskite absorbing layer and performance of transport layer, helping us further improve the device efficiency and analyze the working mechanism.


Highlights:


1 A universal and simple method to analyze current-voltage curves of planar heterojunction perovskite solar cells is proposed.
2 The new method theoretically solves the dilemma of the parameter diode ideal factor being larger than 2.
3 The dark current fitted with the new method helps to analyze physical processes of perovskite solar cells.

Keywords

Dark current Device simulation Junction property Perovskite Solar cell
Liao, Peizhe, Xiaojuan Zhao, Guolong Li, Yan Shen, and Mingkui Wang. 2017. “A New Method for Fitting Current–Voltage Curves of Planar Heterojunction Perovskite Solar Cells”. Nano-Micro Letters 10 (1):5. https://doi.org/10.1007/s40820-017-0159-z.
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