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Vol. 16 (2024)

Enhancing the Performance of Perovskite Light-Emitting Diodes via Synergistic Effect of Defect Passivation and Dielectric Screening

https://doi.org/10.1007/s40820-024-01405-5
Xuanchi Yu
Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao 999078, People’s Republic of China
Jia Guo
Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao 999078, People’s Republic of China
Yulin Mao
Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao 999078, People’s Republic of China
Chengwei Shan
Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, People’s Republic of China
Fengshou Tian
Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, People’s Republic of China
Bingheng Meng
Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, People’s Republic of China
Zhaojin Wang
Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, People’s Republic of China
Tianqi Zhang
Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao 999078, People’s Republic of China
Aung Ko Ko Kyaw
Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, People’s Republic of China
Shuming Chen
Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, People’s Republic of China
Xiaowei Sun
Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, People’s Republic of China
Kai Wang
Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, People’s Republic of China
Rui Chen
Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, People’s Republic of China
Guichuan Xing
Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao 999078, People’s Republic of China

Corresponding Author: Guichuan Xing

gcxing@um.edu.mo

Nano-Micro Letters, Vol. 16 (2024), Article Number: 205

Abstract

Metal halide perovskites, particularly the quasi-two-dimensional perovskite subclass, have exhibited considerable potential for next-generation electroluminescent materials for lighting and display. Nevertheless, the presence of defects within these perovskites has a substantial influence on the emission efficiency and durability of the devices. In this study, we revealed a synergistic passivation mechanism on perovskite films by using a dual-functional compound of potassium bromide. The dual functional potassium bromide on the one hand can passivate the defects of halide vacancies with bromine anions and, on the other hand, can screen the charged defects at the grain boundaries with potassium cations. This approach effectively reduces the probability of carriers quenching resulting from charged defects capture and consequently enhances the radiative recombination efficiency of perovskite thin films, leading to a significant enhancement of photoluminescence quantum yield to near-unity values (95%). Meanwhile, the potassium bromide treatment promoted the growth of homogeneous and smooth film, facilitating the charge carrier injection in the devices. Consequently, the perovskite light-emitting diodes based on this strategy achieve a maximum external quantum efficiency of ~ 21% and maximum luminance of ~ 60,000 cd m−2. This work provides a deeper insight into the passivation mechanism of ionic compound additives in perovskite with the solution method.


Highlights:
1 Synergistic passivation mechanism of the dual functional compound of potassium bromide for metal halide perovskite films, that is through chemical bonding and physical screening towards the various types of defects.
2 Metal-ion additives can simultaneously passivate the defects of halide vacancies with bromine anions and dangling bond defects with metal cations.
3 Achieve the maximum external quantum efficiency of ~21% and maximum luminance of ~60,000 cd m−2.

Keywords

Synergistic passivation strategy Defects passivation Dielectric screening Perovskite light-emitting diodes
Yu, Xuanchi, Jia Guo, Yulin Mao, Chengwei Shan, Fengshou Tian, Bingheng Meng, Zhaojin Wang, Tianqi Zhang, Aung Ko Ko Kyaw, Shuming Chen, Xiaowei Sun, Kai Wang, Rui Chen, and Guichuan Xing. 2024. “Enhancing the Performance of Perovskite Light-Emitting Diodes via Synergistic Effect of Defect Passivation and Dielectric Screening”. Nano-Micro Letters 16 (May):205. https://doi.org/10.1007/s40820-024-01405-5.
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