Issue

Vol. 14 (2022)

Elastic Buffering Layer on CuS Enabling High-Rate and Long-Life Sodium-Ion Storage

https://doi.org/10.1007/s40820-022-00924-3
Yuanhua Xiao
Key Laboratory of Surface and Interface Science and Technology, Zhengzhou University of Light Industry, Zhengzhou 450002, People’s Republic of China
Feng Yue
Key Laboratory of Surface and Interface Science and Technology, Zhengzhou University of Light Industry, Zhengzhou 450002, People’s Republic of China
Ziqing Wen
Key Laboratory of Surface and Interface Science and Technology, Zhengzhou University of Light Industry, Zhengzhou 450002, People’s Republic of China
Ya Shen
Key Laboratory of Surface and Interface Science and Technology, Zhengzhou University of Light Industry, Zhengzhou 450002, People’s Republic of China
Dangcheng Su
Key Laboratory of Surface and Interface Science and Technology, Zhengzhou University of Light Industry, Zhengzhou 450002, People’s Republic of China
Huazhang Guo
Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444, People’s Republic of China
Xianhong Rui
Institute School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, People’s Republic of China
Liming Zhou
Key Laboratory of Surface and Interface Science and Technology, Zhengzhou University of Light Industry, Zhengzhou 450002, People’s Republic of China
Shaoming Fang
Key Laboratory of Surface and Interface Science and Technology, Zhengzhou University of Light Industry, Zhengzhou 450002, People’s Republic of China
Yan Yu
Hefei National Research Center for Physical Sciences at the Microscale, Department of Materials Science and Engineering, National Synchrotron Radiation Laboratory, CAS Key Laboratory of Materials for Energy Conversion, University of Science and Technology of China. Hefei, Anhui 230026, People’s Republic of China

Corresponding Author: Yan Yu

yanyumse@ustc.edu.cn

Nano-Micro Letters, Vol. 14 (2022), Article Number: 193

Abstract

The latest view suggests the inactive core, surface pulverization, and polysulfide shuttling effect of metal sulfides are responsible for their low capacity and poor cycling performance in sodium-ion batteries (SIBs). Whereas overcoming the above problems based on conventional nanoengineering is not efficient enough. In this work, erythrocyte-like CuS microspheres with an elastic buffering layer of ultrathin polyaniline (PANI) were synthesized through one-step self-assembly growth, followed by in situ polymerization of aniline. When CuS@PANI is used as anode electrode in SIBs, it delivers high capacity, ultrahigh rate capability (500 mAh g−1 at 0.1 A g−1, and 214.5 mAh g−1 at 40 A g−1), and superior cycling life of over 7500 cycles at 20 A g−1. A series of in/ex situ characterization techniques were applied to investigate the structural evolution and sodium-ion storage mechanism. The PANI swollen with electrolyte can stabilize solid electrolyte interface layer, benefit the ion transport/charge transfer at the PANI/electrolyte interface, and restrain the size growth of Cu particles in confined space. Moreover, finite element analyses and density functional simulations confirm that the PANI film effectively buffers the volume expansion, suppresses the surface pulverization, and traps the polysulfide.


Highlights:


1 Erythrocyte-like CuS microspheres were encapsulated in ultrathin polyaniline (PANI) layer coating.
2 PANI swollen by electrolytes stabilizes solid electrolyte interface layer and benefits the ion transport and charge transfer at the PANI/electrolyte interface.
3 Multi-functional PANI coating ensures an outstanding comprehensive performance for sodium-ion storage.

Keywords

CuS Elastic buffering layer Polyaniline Long life Sodium-ion batteries
Xiao, Yuanhua, Feng Yue, Ziqing Wen, Ya Shen, Dangcheng Su, Huazhang Guo, Xianhong Rui, Liming Zhou, Shaoming Fang, and Yan Yu. 2022. “Elastic Buffering Layer on CuS Enabling High-Rate and Long-Life Sodium-Ion Storage”. Nano-Micro Letters 14 (September):193. https://doi.org/10.1007/s40820-022-00924-3.
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