Issue

Vol. 2 No. 3 (2010)

Current sustainability and electromigration of Pd, Sc and Y thin-films as potential interconnects

https://doi.org/10.1007/BF03353639
Yong Yang
Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, P. R. China Institute of Physics, Chinese Academy of Sciences, Beijing 100080, P. R. China
Shengyong Xu
Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, P. R. China Institute of Physics, Chinese Academy of Sciences, Beijing 100080, P. R. China
Sishen Xie
Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, P. R. China Institute of Physics, Chinese Academy of Sciences, Beijing 100080, P. R. China
Lian-Mao Peng
Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, P. R. China Institute of Physics, Chinese Academy of Sciences, Beijing 100080, P. R. China

Corresponding Author: Lian-Mao Peng

lmpeng@pku.edu.cn

Nano-Micro Letters, Vol. 2 No. 3 (2010), Article Number: 184-189

Abstract

The progress on novel interconnects for carbon nanotube (CNT)-based electronic circuit is by far behind the remarkable development of CNT-field effect transistors. The Cu interconnect material used in current integrated circuits seems not applicable for the novel interconnects, as it requires electrochemical deposition followed by chemical-mechanical polishing. We report our experimental results on the failure current density, resistivity, electromigration effect and failure mechanism of patterned stripes of Pd, Sc and Y thin-films, regarding them as the potential novel interconnects. The Pd stripes have a failure current density of (8∼10)×106 A/cm2 (MA/cm2), and they are stable when the working current density is as much as 90% of the failure current density. However, they show a resistivity around 210 μΩ·cm, which is 20 times of the bulk value and leaving room for improvement. Compared to Pd, the Sc stripes have a similar resistivity but smaller failure current density of 4∼5 MA/cm2. Y stripes seem not suitable for interconnects by showing even lower failure current density than that of Sc and evidence of oxidation. For comparison, Au stripes of the same dimensions show a failure current density of 30 MA/cm2 and a resistivity around 4 μΩ·cm, making them also a good material as novel interconnects.

Keywords

Carbon nanotube-based field effect transistors Carbon nanotube-based circuit Interconnects Current density Electromigration Resistivity
Yang, Yong, Shengyong Xu, Sishen Xie, and Lian-Mao Peng. 2010. “Current Sustainability and Electromigration of Pd, Sc and Y Thin-Films As Potential Interconnects”. Nano-Micro Letters 2 (3):184-89. https://doi.org/10.1007/BF03353639.
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