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Vol. 15 (2023)

Self-Generated Buried Submicrocavities for High-Performance Near-Infrared Perovskite Light-Emitting Diode

https://doi.org/10.1007/s40820-023-01097-3
Jiong Li
School of Environment and Energy, State Key Lab of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou 510000, People’s Republic of China
Chenghao Duan
School of Environment and Energy, State Key Lab of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou 510000, People’s Republic of China
Qianpeng Zhang
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, People’s Republic of China
Chang Chen
School of Environment and Energy, State Key Lab of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou 510000, People’s Republic of China
Qiaoyun Wen
School of Environment and Energy, State Key Lab of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou 510000, People’s Republic of China
Minchao Qin
Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, People’s Republic of China
Christopher C. S. Chan
Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, People’s Republic of China
Shibing Zou
School of Environment and Energy, State Key Lab of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou 510000, People’s Republic of China
Jianwu Wei
School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, People’s Republic of China
Zuo Xiao
Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing 100190, People’s Republic of China
Chuantian Zuo
Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing 100190, People’s Republic of China
Xinhui Lu
Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, People’s Republic of China
Kam Sing Wong
Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, People’s Republic of China
Zhiyong Fan
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, People’s Republic of China
Keyou Yan
School of Environment and Energy, State Key Lab of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou 510000, People’s Republic of China

Corresponding Author: Zhiyong Fan

eezfan@ust.hk

Nano-Micro Letters, Vol. 15 (2023), Article Number: 125

Abstract

Embedding submicrocavities is an effective approach to improve the light out-coupling efficiency (LOCE) for planar perovskite light-emitting diodes (PeLEDs). In this work, we employ phenethylammonium iodide (PEAI) to trigger the Ostwald ripening for the downward recrystallization of perovskite, resulting in spontaneous formation of buried submicrocavities as light output coupler. The simulation suggests the buried submicrocavities can improve the LOCE from 26.8 to 36.2% for near-infrared light. Therefore, PeLED yields peak external quantum efficiency (EQE) increasing from 17.3% at current density of 114 mA cm−2 to 25.5% at current density of 109 mA cm−2 and a radiance increasing from 109 to 487 W sr−1 m−2 with low rolling-off. The turn-on voltage decreased from 1.25 to 1.15 V at 0.1 W sr−1 m−2. Besides, downward recrystallization process slightly reduces the trap density from 8.90 × 1015 to 7.27 × 1015 cm−3. This work provides a self-assembly method to integrate buried output coupler for boosting the performance of PeLEDs.


Highlights:


1 Synergistic effect triggers the Ostwald ripening for the downward recrystallization of perovskite to form buried submicrocavities as light output coupler.
2 The simulation suggests the buried submicrocavities can improve the light out-coupling efficiency from 26.8% to 36.2% for near-infrared light.
3 Light-emitting diodes yields peak external quantum efficiency increasing from 17.3% at current density of 114 mA cm−2 to 25.5% at current density of 109 mA cm−2 and a radiance increasing from 109 to 487 W sr−1 m−2 with low rolling-off.

Keywords

Perovskite light-emitting diodes Downward recrystallization Buried submicrocavities Light out-coupling efficiency Radiative recombination
Li, Jiong, Chenghao Duan, Qianpeng Zhang, Chang Chen, Qiaoyun Wen, Minchao Qin, Christopher C. S. Chan, Shibing Zou, Jianwu Wei, Zuo Xiao, Chuantian Zuo, Xinhui Lu, Kam Sing Wong, Zhiyong Fan, and Keyou Yan. 2023. “Self-Generated Buried Submicrocavities for High-Performance Near-Infrared Perovskite Light-Emitting Diode”. Nano-Micro Letters 15 (May):125. https://doi.org/10.1007/s40820-023-01097-3.
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