Issue

Vol. 17 (2025)

Top-Down Dual-Interface Carrier Management for Highly Efficient and Stable Perovskite/Silicon Tandem Solar Cells

https://doi.org/10.1007/s40820-024-01631-x
Xin Li
Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China
Zhiqin Ying
Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China
Shuo Li
CSI Solar Technologies (JiaXing) Co.,Ltd, No.325 Kanghe Road, Gaozhao Street, Xiuzhou Jiaxing, Zhejiang 314001, People’s Republic of China
Lei Chen
CSI Solar Technologies (JiaXing) Co.,Ltd, No.325 Kanghe Road, Gaozhao Street, Xiuzhou Jiaxing, Zhejiang 314001, People’s Republic of China
Meili Zhang
Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China
Linhui Liu
Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China
Xuchao Guo
Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China
Jun Wu
Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China
Yihan Sun
Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China
Chuanxiao Xiao
Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China
Yuheng Zeng
Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China
Jian Wu
CSI Solar Technologies (JiaXing) Co.,Ltd, No.325 Kanghe Road, Gaozhao Street, Xiuzhou Jiaxing, Zhejiang 314001, People’s Republic of China
Xi Yang
Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China
Jichun Ye
Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China

Corresponding Author: Jichun Ye

jichun.ye@nimte.ac.cn

Nano-Micro Letters, Vol. 17 (2025), Article Number: 141

Abstract

Despite significant advancements in the power conversion efficiency (PCE) of perovskite/silicon tandem solar cells, improving carrier management in top cells remains challenging due to the defective dual interfaces of wide-bandgap perovskite, particularly on textured silicon surfaces. Herein, a series of halide ions (Cl−, Br−, I−) substituted piperazinium salts are designed and synthesized as post-treatment modifiers for perovskite surfaces. Notably, piperazinium chloride induces an asymmetric bidirectional ions distribution from the top to the bottom surface, with large piperazinium cations concentrating at the perovskite surface and small chloride anions migrating downward to accumulate at the buried interface. This results in effective dual-interface defect passivation and energy band modulation, enabling wide-bandgap (1.68 eV) perovskite solar cells to achieve a PCE of 22.3% and a record product of open-circuit voltage × fill factor (84.4% relative to the Shockley–Queisser limit). Furthermore, the device retains 91.3% of its initial efficiency after 1200 h of maximum power point tracking without encapsulation. When integrated with double-textured silicon heterojunction solar cells, a remarkable PCE of 31.5% is achieved for a 1.04 cm2 monolithic perovskite/silicon tandem solar cell, exhibiting excellent long-term operational stability (T80 = 755 h) without encapsulation in ambient air. This work provides a convenient strategy on dual-interface engineering for making high-efficiency and stable perovskite platforms.


Highlights:
1 An innovated top-down dual-interface carrier management strategy is developed to effectively improve both interfaces of the wide-bandgap perovskite using a multi-functionalized piperazinium chloride post-treatment.
2 The 1.68 eV unencapsulated single-junction perovskite solar cells exhibit a champion PCE of 22.3%, with a record VOC × FF product (84.4% relative to the Shockley–Queisser limit).
3 An impressive PCE of 31.5% for the 1.04 cm2 monolithic perovskite/silicon tandem solar cell based on silicon heterojunction bottom cell is demonstrated.

Keywords

Perovskite/silicon tandem solar cells Carrier management Dual-interface Post-treatment
Li, Xin, Zhiqin Ying, Shuo Li, Lei Chen, Meili Zhang, Linhui Liu, Xuchao Guo, Jun Wu, Yihan Sun, Chuanxiao Xiao, Yuheng Zeng, Jian Wu, Xi Yang, and Jichun Ye. 2025. “Top-Down Dual-Interface Carrier Management for Highly Efficient and Stable Perovskite/Silicon Tandem Solar Cells”. Nano-Micro Letters 17 (February):141. https://doi.org/10.1007/s40820-024-01631-x.
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