Issue

Vol. 18 (2026)

Full-Photolithographic High-Density Skin-Like Transistor Arrays for All-Organic Active-Matrix Displays

https://doi.org/10.1007/s40820-026-02107-w
Peng Xue
Center for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV‑Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, People’s Republic of China
Juntong Li
Center for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV‑Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, People’s Republic of China
Xiaoli Zhao
Center for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV‑Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, People’s Republic of China
Yanping Ni
Center for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV‑Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, People’s Republic of China
Hongyan Yu
Center for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV‑Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, People’s Republic of China
Xianghui Liu
Center for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV‑Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, People’s Republic of China
Bowen Xiang
Center for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV‑Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, People’s Republic of China
Yao Fu
Center for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV‑Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, People’s Republic of China
Junru Zhang
Center for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV‑Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, People’s Republic of China
Baoying Sun
Center for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV‑Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, People’s Republic of China
Pengbo Xi
Center for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV‑Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, People’s Republic of China
Xiang Song
Center for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV‑Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, People’s Republic of China
Yijun Shi
Center for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV‑Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, People’s Republic of China
Guodong Zhao
Center for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV‑Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, People’s Republic of China
Mingxin Zhang
Center for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV‑Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, People’s Republic of China
Yanhong Tong
Center for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV‑Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, People’s Republic of China
Qingxin Tang
Center for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV‑Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, People’s Republic of China
Yichun Liu
Center for State Key Laboratory of Integrated Optoelectronics, and Key Lab of UV‑Emitting Materials and Technology of Ministry of Education, College of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, People’s Republic of China

Corresponding Author: Qingxin Tang

tangqx@nenu.edu.cn

Nano-Micro Letters, Vol. 18 (2026), Article Number: 270

Abstract

Organic thin-film transistors (OTFTs) are widely recognized as promising building blocks for next-generation flexible and wearable electronics. However, scalable fabrication of high-density OTFT arrays for active-matrix applications remains highly challenging, primarily due to the incompatibility of conventional photolithography with organic semiconductors. Here, we report an all-photolithographic strategy that enables the scalable fabrication of flexible OTFT arrays with both high device density and superior charge transport characteristics. By combining synergistic interfacial modulation and dual-protection photolithography strategy of organic semiconductors, we successfully fabricated transistor arrays exhibiting an average mobility above 1.0 cm2 V−1 s−1 and on/off ratios of ~ 105. This scalable method further enables an integration density of 6.25 × 104 cm−2, which is one of the highest densities reported to date for full-photolithographic OTFT active-matrix arrays. Moreover, we demonstrate seamless integration of OTFT active-matrix arrays with organic light-emitting diodes (OLEDs), yielding all-organic active-matrix OLED (AMOLED) arrays. These devices exhibit stable electroluminescence, ultralight weight (~ 24.3 g m−2), excellent flexibility, and skin-like display functionality with reliable pixel-level addressing. This work establishes a universal and scalable route toward high-density organic electronic systems, opening new opportunities for flexible displays, electronic skin, and next-generation wearable technologies.


Highlights:
1 A universal and scalable process fully compatible with organic semiconductors is developed, achieving precise micropatterning and high integration density of 6.25 × 104 cm−2.
2 All-organic active-matrix organic light-emitting diode arrays with skin-like deformability were successfully fabricated. Notably, the integrated system not only exhibits stable electroluminescence, ultralight weight (~24.3 g m−2), and strong conformability to complex surfaces but also paves a promising path for the development of next-generation flexible and wearable displays.

Keywords

Active-Matrix Organic thin-film transistors Photolithography Organic light-emitting diodes
Xue, Peng, Juntong Li, Xiaoli Zhao, Yanping Ni, Hongyan Yu, Xianghui Liu, Bowen Xiang, Yao Fu, Junru Zhang, Baoying Sun, Pengbo Xi, Xiang Song, Yijun Shi, Guodong Zhao, Mingxin Zhang, Yanhong Tong, Qingxin Tang, and Yichun Liu. 2026. “Full-Photolithographic High-Density Skin-Like Transistor Arrays for All-Organic Active-Matrix Displays”. Nano-Micro Letters 18 (March):270. https://doi.org/10.1007/s40820-026-02107-w.
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