Issue

Vol. 12 (2020)

Environmental Analysis with 2D Transition-Metal Dichalcogenide-Based Field-Effect Transistors

https://doi.org/10.1007/s40820-020-00438-w
Xiaoyan Chen
Biomedical Multidisciplinary Innovation Research Institute, Shanghai East Hospital, State Key Laboratory of Pollution Control and Resource Reuse, College of Environmental Science and Engineering, Tongji University, 1239 Siping Road, Shanghai 200092, People’s Republic of China
Chengbin Liu
Biomedical Multidisciplinary Innovation Research Institute, Shanghai East Hospital, State Key Laboratory of Pollution Control and Resource Reuse, College of Environmental Science and Engineering, Tongji University, 1239 Siping Road, Shanghai 200092, People’s Republic of China
Shun Mao
Biomedical Multidisciplinary Innovation Research Institute, Shanghai East Hospital, State Key Laboratory of Pollution Control and Resource Reuse, College of Environmental Science and Engineering, Tongji University, 1239 Siping Road, Shanghai 200092, People’s Republic of China

Corresponding Author: Shun Mao

shunmao@tongji.edu.cn

Nano-Micro Letters, Vol. 12 (2020), Article Number: 95

Abstract

Field-effect transistors (FETs) present highly sensitive, rapid, and in situ detection capability in chemical and biological analysis. Recently, two-dimensional (2D) transition-metal dichalcogenides (TMDCs) attract significant attention as FET channel due to their unique structures and outstanding properties. With the booming of studies on TMDC FETs, we aim to give a timely review on TMDC-based FET sensors for environmental analysis in different media. First, theoretical basics on TMDC and FET sensor are introduced. Then, recent advances of TMDC FET sensor for pollutant detection in gaseous and aqueous media are, respectively, discussed. At last, future perspectives and challenges in practical application and commercialization are given for TMDC FET sensors. This article provides an overview on TMDC sensors for a wide variety of analytes with an emphasize on the increasing demand of advanced sensing technologies in environmental analysis.


Article Highlights:


1 Recent advances of two-dimensional (2D) transition-metal dichalcogenide (TMDC)-based field-effect transistor (FET) sensors for environmental analysis are summarized.
2 Representative TMDC FET sensors in gaseous and aqueous media analysis are introduced.
3 Challenges and future research directions of 2D TMDC FET sensors are discussed.

Keywords

Environmental analysis Two-dimensional transition-metal dichalcogenide Field-effect transistor Gas sensor Biosensor
Chen, Xiaoyan, Chengbin Liu, and Shun Mao. 2020. “Environmental Analysis With 2D Transition-Metal Dichalcogenide-Based Field-Effect Transistors”. Nano-Micro Letters 12 (April):95. https://doi.org/10.1007/s40820-020-00438-w.
Download Citation
Endnote/Zotero/Mendeley (RIS)
BibTeX
References
  1. M.-P.N. Bui, J. Brockgreitens, S. Ahmed, A. Abbas, Dual detection of nitrate and mercury in water using disposable electrochemical sensors. Biosens. Bioelectron. 85, 280–286 (2016). https://doi.org/10.1016/j.bios.2016.05.017
  2. R.A. Potyrailo, Multivariable sensors for ubiquitous monitoring of gases in the era of internet of things and industrial internet. Chem. Rev. 116, 11877–11923 (2016). https://doi.org/10.1021/acs.chemrev.6b00187
  3. S. Mao, J. Chang, H. Pu, G. Lu, Q. He, H. Zhang, J. Chen, Two-dimensional nanomaterial-based field-effect transistors for chemical and biological sensing. Chem. Soc. Rev. 46, 6872–6904 (2017). https://doi.org/10.1039/C6CS00827E
  4. L. Torsi, M. Magliulo, K. Manoli, G. Palazzo, Organic field-effect transistor sensors: a tutorial review. Chem. Soc. Rev. 42, 8612–8628 (2013). https://doi.org/10.1039/c3cs60127g
  5. E. Stern, A. Vacic, M.A. Reed, Semiconducting nanowire field-effect transistor biomolecular sensors. IEEE Trans. Electron. Devices 55, 3119–3130 (2008). https://doi.org/10.1109/TED.2008.2005168
  6. F. Wang, X. Hu, X. Niu, J. Xie, S. Chu, Q. Gong, Low-dimensional materials-based field-effect transistors. J. Mater. Chem. C 6, 924–941 (2018). https://doi.org/10.1039/C7TC04819J
  7. I. Meric, M.Y. Han, A.F. Young, B. Ozyilmaz, P. Kim, K.L. Shepard, Current saturation in zero-bandgap, top-gated graphene field-effect transistors. Nat. Nanotechnol. 3, 654–659 (2008). https://doi.org/10.1038/nnano.2008.268
  8. J.O. Island, G.A. Steele, H.S.J. van der Zant, A. Castellanos-Gomez, Environmental instability of few-layer black phosphorus. 2D Mater. (2015). https://doi.org/10.1088/2053-1583/2/1/011002
  9. Q.H. Wang, K. Kalantar-Zadeh, A. Kis, J.N. Coleman, M.S. Strano, Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699–712 (2012). https://doi.org/10.1038/nnano.2012.193
  10. V. Yadav, S. Roy, P. Singh, Z. Khan, A. Jaiswal, 2D MoS2-based nanomaterials for therapeutic, bioimaging, and biosensing applications. Small 15, 1803706 (2019). https://doi.org/10.1002/smll.201803706
  11. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011). https://doi.org/10.1038/nnano.2010.279
  12. S. Cui, Z. Wen, X. Huang, J. Chang, J. Chen, Stabilizing MoS2 nanosheets through sno2 nanocrystal decoration for high-performance gas sensing in air. Small 11, 2305–2313 (2015). https://doi.org/10.1002/smll.201402923
  13. J. Baek, D. Yin, N. Liu, I. Omkaram, C. Jung et al., A highly sensitive chemical gas detecting transistor based on highly crystalline CVD-grown MoSe2 films. Nano Res. 10, 1861–1871 (2017). https://doi.org/10.1007/s12274-016-1291-7
  14. Y. Han, D. Huang, Y. Ma, G. He, J. Hu et al., Design of hetero-nanostructures on MoS2 nanosheets to boost NO2 room-temperature sensing. ACS Appl. Mater. Interfaces 10, 22640 (2018). https://doi.org/10.1021/acsami.8b05811
  15. K.Y. Ko, J.-G. Song, Y. Kim, T. Choi, S. Shin et al., Improvement of gas-sensing performance of large-area tungsten disulfide nanosheets by surface functionalization. ACS Nano 10, 9287–9296 (2016). https://doi.org/10.1021/acsnano.6b03631
  16. B. Cho, M.G. Hahm, M. Choi, J. Yoon, A.R. Kim et al., Charge-transfer-based gas sensing using atomic-layer MoS2. Sci. Rep. 5, 8052 (2015). https://doi.org/10.1038/srep08052
  17. D.J. Late, T. Doneux, M. Bougouma, Single-layer MoSe2 based NH3 gas sensor. Appl. Phys. Lett. 105, 233103 (2014). https://doi.org/10.1063/1.4903358
  18. J.-S. Kim, H.-W. Yoo, H.O. Choi, H.-T. Jung, Tunable volatile organic compounds sensor by using thiolated ligand conjugation on MoS2. Nano Lett. 14, 5941–5947 (2014). https://doi.org/10.1021/nl502906a
  19. E. Wu, Y. Xie, B. Yuan, D. Hao, C. An et al., Specific and highly sensitive detection of ketone compounds based on p-type MoTe2 under ultraviolet illumination. ACS Appl. Mater. Interfaces 10, 35664–35669 (2018). https://doi.org/10.1021/acsami.8b14142
  20. S. Jiang, R. Cheng, R. Ng, Y. Huang, X. Duan, Highly sensitive detection of mercury(II) ions with few-layer molybdenum disulfide. Nano Res. 8, 257–262 (2015). https://doi.org/10.1007/s12274-014-0658-x
  21. G. Zhou, J. Chang, H. Pu, K. Shi, S. Mao et al., Ultrasensitive mercury ion detection using DNA-functionalized molybdenum disulfide nanosheet/gold nanoparticle hybrid field-effect transistor device. ACS Sensors 1, 295–302 (2016). https://doi.org/10.1021/acssensors.5b00241
  22. P. Li, D. Zhang, Y.E. Sun, H. Chang, J. Liu, N. Yin, Towards intrinsic MoS2 devices for high performance arsenite sensing. Appl. Phys. Lett. 109, 063110 (2016). https://doi.org/10.1063/1.4960967
  23. J. Shan, J. Li, X. Chu, M. Xu, F. Jin et al., High sensitivity glucose detection at extremely low concentrations using a MoS2-based field-effect transistor. RSC Adv. 8, 7942–7948 (2018). https://doi.org/10.1039/C7RA13614E
  24. C. Zheng, X. Jin, Y. Li, J. Mei, Y. Sun et al., Sensitive molybdenum disulfide based field effect transistor sensor for real-time monitoring of hydrogen peroxide. Sci. Rep. 9, 759 (2019). https://doi.org/10.1038/s41598-018-36752-y
  25. H.W. Lee, D.-H. Kang, J.H. Cho, S. Lee, D.-H. Jun, J.-H. Park, Highly sensitive and reusable membraneless field-effect transistor (FET)-type tungsten diselenide (WSe2) biosensors. ACS Appl. Mater. Interfaces 10, 17639–17645 (2018). https://doi.org/10.1021/acsami.8b03432
  26. J. Liu, X. Chen, Q. Wang, M. Xiao, D. Zhong, W. Sun, G. Zhang, Z. Zhang, Ultrasensitive monolayer MoS2 field-effect transistor based DNA sensors for screening of down syndrome. Nano Lett. 19, 1437–1444 (2019). https://doi.org/10.1021/acs.nanolett.8b03818
  27. A.B. Farimani, K. Min, N.R. Aluru, DNA base detection using a single-layer MoS2. ACS Nano 8, 7914–7922 (2014). https://doi.org/10.1021/nn5029295
  28. J. Mei, Y.-T. Li, H. Zhang, M.-M. Xiao, Y. Ning, Z.-Y. Zhang, G.-J. Zhang, Molybdenum disulfide field-effect transistor biosensor for ultrasensitive detection of DNA by employing morpholino as probe. Biosens. Bioelectron. 110, 71–77 (2018). https://doi.org/10.1016/j.bios.2018.03.043
  29. S.M. Majd, A. Salimi, F. Ghasemi, An ultrasensitive detection of miRNA-155 in breast cancer via direct hybridization assay using two-dimensional molybdenum disulfide field-effect transistor biosensor. Biosens. Bioelectron. 105, 6–13 (2018). https://doi.org/10.1016/j.bios.2018.01.009
  30. C.H. Naylor, N.J. Kybert, C. Schneier, J. Xi, G. Romero, J.G. Saven, R. Liu, A.T.C. Johnson, Scalable production of molybdenum disulfide based biosensors. ACS Nano 10, 6173–6179 (2016). https://doi.org/10.1021/acsnano.6b02137
  31. G. Yoo, H. Park, M. Kim, W.G. Song, S. Jeong et al., Real-time electrical detection of epidermal skin MoS2 biosensor for point-of-care diagnostics. Nano Res. 10, 767–775 (2017). https://doi.org/10.1007/s12274-016-1289-1
  32. L. Wang, Y. Wang, J.I. Wong, T. Palacios, J. Kong, H.Y. Yang, Functionalized MoS2 nanosheet-based field-effect biosensor for label-free sensitive detection of cancer marker proteins in solution. Small 10, 1101–1105 (2014). https://doi.org/10.1002/smll.201302081
  33. C. Singhal, M. Khanuja, N. Chaudhary, C.S. Pundir, J. Narang, Detection of chikungunya virus DNA using two-dimensional MoS2 nanosheets based disposable biosensor. Sci. Rep. 8, 7734 (2018). https://doi.org/10.1038/s41598-018-25824-8
  34. B. Sharma, A. Sharma, J.-S. Kim, Recent advances on H2 sensor technologies based on MOX and FET devices: a review. Sens. Actuator B-Chem. 262, 758–770 (2018). https://doi.org/10.1016/j.snb.2018.01.212
  35. C. Zhang, Y. Luo, J. Xu, M. Debliquy, Room temperature conductive type metal oxide semiconductor gas sensors for NO2 detection. Sens. Actuator A-Phys. 289, 118–133 (2019). https://doi.org/10.1016/j.sna.2019.02.027
  36. L. Hao, Y. Liu, W. Gao, Y. Liu, Z. Han, L. Yu, Q. Xue, J. Zhu, High hydrogen sensitivity of vertically standing layered MoS2/Si heterojunctions. J. Alloys Compd. 682, 29–34 (2016). https://doi.org/10.1016/j.jallcom.2016.04.277
  37. C. Kuru, D. Choi, A. Kargar, C.H. Liu, S. Yavuz, C. Choi, S. Jin, P.R. Bandaru, High-performance flexible hydrogen sensor made of WS2 nanosheet–Pd nanoparticle composite film. Nanotechnology 27, 195501 (2016). https://doi.org/10.1088/0957-4484/27/19/195501
  38. F. Perrozzi, S.M. Emamjomeh, V. Paolucci, G. Taglieri, L. Ottaviano, C. Cantalini, Thermal stability of WS2 flakes and gas sensing properties of WS2/WO3 composite to H2, NH3 and NO2. Sens. Actuator B-Chem. 243, 812–822 (2017). https://doi.org/10.1016/j.snb.2016.12.069
  39. M. Donarelli, S. Prezioso, F. Perrozzi, F. Bisti, M. Nardone, L. Giancaterini, C. Cantalini, L. Ottaviano, Response to NO2 and other gases of resistive chemically exfoliated MoS2-based gas sensors. Sens. Actuator B-Chem. 207, 602–613 (2015). https://doi.org/10.1016/j.snb.2014.10.099
  40. B. Liu, L. Chen, G. Liu, A.N. Abbas, M. Fathi, C. Zhou, High-performance chemical sensing using schottky-contacted chemical vapor deposition grown monolayer MoS2 transistors. ACS Nano 8, 5304–5314 (2014). https://doi.org/10.1021/nn5015215
  41. R. Guo, Y. Han, C. Su, X. Chen, M. Zeng et al., Ultrasensitive room temperature NO2 sensors based on liquid phase exfoliated WSe2 nanosheets. Sens. Actuator B-Chem. 300, 127013 (2019). https://doi.org/10.1016/j.snb.2019.127013
  42. Z. Feng, Y. Xie, J. Chen, Y. Yu, S. Zheng et al., Highly sensitive MoTe2 chemical sensor with fast recovery rate through gate biasing. 2D Mater. 4, 025018 (2017). https://doi.org/10.1088/2053-1583/aa57fe
  43. I. Shackery, A. Pezeshki, J.Y. Park, U. Palanivel, H.J. Kwon et al., Few-layered α-MoTe2 Schottky junction for a high sensitivity chemical-vapour sensor. J. Mater. Chem. C 6, 10714–10722 (2018). https://doi.org/10.1039/C8TC02635A
  44. A. Pezeshki, S.H. Hosseini Shokouh, S.R.A. Raza, J.S. Kim, S.-W. Min, I. Shackery, S.C. Jun, S. Im, Top and back gate molybdenum disulfide transistors coupled for logic and photo-inverter operation. J. Mater. Chem. C 2, 8023–8028 (2014). https://doi.org/10.1039/C4TC01673D
  45. Y. Xu, C. Cheng, S. Du, J. Yang, B. Yu et al., Contacts between two- and three-dimensional materials: ohmic, schottky, and p–n heterojunctions. ACS Nano 10, 4895–4919 (2016). https://doi.org/10.1021/acsnano.6b01842
  46. S. Ahmed, M. Shawkat, M.I. Chowdhury, S. Mominuzzaman, Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths. Micro Nano Lett. 10, 523–527 (2015). https://doi.org/10.1049/mnl.2015.0193
  47. W. Bao, X. Cai, D. Kim, K. Sridhara, M.S. Fuhrer, High mobility ambipolar MoS2 field-effect transistors: substrate and dielectric effects. Appl. Phys. Lett. 102, 042104 (2013). https://doi.org/10.1063/1.4789365
  48. C. Zhang, P. Chen, W. Hu, Organic field-effect transistor-based gas sensors. Chem. Soc. Rev. 44, 2087–2107 (2015). https://doi.org/10.1039/C4CS00326H
  49. G. Shalev, Y. Rosenwaks, I. Levy, The interplay between pH sensitivity and label-free protein detection in immunologically modified nano-scaled field-effect transistor. Biosens. Bioelectron. 31, 510–515 (2012). https://doi.org/10.1016/j.bios.2011.11.038
  50. E. Stern, R. Wagner, F.J. Sigworth, R. Breaker, T.M. Fahmy, M.A. Reed, Importance of the Debye screening length on nanowire field effect transistor sensors. Nano Lett. 7, 3405–3409 (2007). https://doi.org/10.1021/nl071792z
  51. M. Pumera, A.H. Loo, Layered transition-metal dichalcogenides (MoS2 and WS2) for sensing and biosensing. TrAC Trends Anal. Chem. 61, 49–53 (2014). https://doi.org/10.1016/j.trac.2014.05.009
  52. B.L. Li, J. Wang, H.L. Zou, S. Garaj, C.T. Lim, J. Xie, N.B. Li, D.T. Leong, Low-dimensional transition metal dichalcogenide nanostructures based sensors. Adv. Funct. Mater. 26, 7034–7056 (2016). https://doi.org/10.1002/adfm.201602136
  53. J. Ping, Z. Fan, M. Sindoro, Y. Ying, H. Zhang, Recent advances in sensing applications of two-dimensional transition metal dichalcogenide nanosheets and their composites. Adv. Funct. Mater. 27, 1605817 (2017). https://doi.org/10.1002/adfm.201605817
  54. X. Gan, H. Zhao, X. Quan, Two-dimensional MoS2: a promising building block for biosensors. Biosens. Bioelectron. 89, 56–71 (2017). https://doi.org/10.1016/j.bios.2016.03.042
  55. W. Zhang, P. Zhang, Z. Su, G. Wei, Synthesis and sensor applications of MoS2-based nanocomposites. Nanoscale 7, 18364–18378 (2015). https://doi.org/10.1039/C5NR06121K
  56. S. Manzeli, D. Ovchinnikov, D. Pasquier, O.V. Yazyev, A. Kis, 2D transition metal dichalcogenides. Nat. Rev. Mater. 2, 17033 (2017). https://doi.org/10.1038/natrevmats.2017.33
  57. D.M. Andoshe, J.-M. Jeon, S.Y. Kim, H.W. Jang, Two-dimensional transition metal dichalcogenide nanomaterials for solar water splitting. Electron. Mater. Lett. 11, 323–335 (2015). https://doi.org/10.1007/s13391-015-4402-9
  58. K.S. Novoselov, D. Jiang, F. Schedin, T.J. Booth, V.V. Khotkevich, S.V. Morozov, A.K. Geim, Two-dimensional atomic crystals. Proc. Natl. Acad. Sci. USA 102, 10451–10453 (2005). https://doi.org/10.1073/pnas.0502848102
  59. M. Samadi, N. Sarikhani, M. Zirak, H. Zhang, H.-L. Zhang, A.Z. Moshfegh, Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives. Nanoscale Horiz. 3, 90–204 (2018). https://doi.org/10.1039/C7NH00137A
  60. S. Ahmed, J. Yi, Two-dimensional transition metal dichalcogenides and their charge carrier mobilities in field-effect transistors. Nano-Micro Lett. 9, 50 (2017). https://doi.org/10.1007/s40820-017-0152-6
  61. G.S. Duesberg, T. Hallam, M. O'Brien, R. Gatensby, H.-Y. Kim et al., Investigation of 2D transition metal dichalcogenide films for electronic devices. 2015 Joint International Eurosoi Workshop and International Conference on Ultimate Integration on Silicon (Eurosoi-Ulis), pp. 73–76 (2015). https://doi.org/10.1109/ULIS.2015.7063776
  62. R.H. Friend, A.D. Yoffe, Electronic properties of intercalation complexes of the transition metal dichalcogenides. Adv. Phys. 36, 1–94 (1987). https://doi.org/10.1080/00018738700101951
  63. H. Li, X. Jia, Q. Zhang, X. Wang, Metallic transition-metal dichalcogenide nanocatalysts for energy conversion. Chem 4, 1510–1537 (2018). https://doi.org/10.1016/j.chempr.2018.03.012
  64. I.A. Rahman, A. Purqon, First principles study of molybdenum disulfide electronic structure. J. Phys. Conf. Ser. 877, 012026 (2017). https://doi.org/10.1088/1742-6596/877/1/012026
  65. C. Gong, H. Zhang, W. Wang, L. Colombo, R.M. Wallace, K. Cho, Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors. Appl. Phys. Lett. 103, 053513 (2013). https://doi.org/10.1063/1.4817409
  66. Y.-W. Son, M.L. Cohen, S.G. Louie, Energy gaps in graphene nanoribbons. Phys. Rev. Lett. 97, 216803 (2006). https://doi.org/10.1103/PhysRevLett.97.216803
  67. E.V. Castro, K.S. Novoselov, S.V. Morozov, N.M.R. Peres, J.M.B.L. dos Santos et al., Biased bilayer graphene: semiconductor with a gap tunable by the electric field effect. Phys. Rev. Lett. 99, 216802 (2007). https://doi.org/10.1103/PhysRevLett.99.216802
  68. M.-H. Chiu, W.-H. Tseng, H.-L. Tang, Y.-H. Chang, C.-H. Chen et al., Band alignment of 2D transition metal dichalcogenide heterojunctions. Adv. Funct. Mater. 27, 1603756 (2017). https://doi.org/10.1002/adfm.201603756
  69. C.R. Kagan, in Molecular Monolayers as Semiconducting Channels in Field Effect Transistors, ed. by R.M. Metzger (Springer, Berlin, 2012), pp. 213–237
  70. H. Fang, S. Chuang, T.C. Chang, K. Takei, T. Takahashi, A. Javey, High-performance single layered WSe2 p-FETs with chemically doped contacts. Nano Lett. 12, 3788–3792 (2012). https://doi.org/10.1021/nl301702r
  71. B. Radisavljevic, M.B. Whitwick, A. Kis, Integrated circuits and logic operations based on single-layer MoS2. ACS Nano 5, 9934–9938 (2011). https://doi.org/10.1021/nn203715c
  72. S. Chuang, C. Battaglia, A. Azcatl, S. McDonnell, J.S. Kang et al., MoS2 P-type transistors and diodes enabled by high work function MoOx contacts. Nano Lett. 14, 1337–1342 (2014). https://doi.org/10.1021/nl4043505
  73. I. Ferain, C.A. Colinge, J.-P. Colinge, Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors. Nature 479, 310–316 (2011). https://doi.org/10.1038/nature10676
  74. G.D. Wilk, R.M. Wallace, J.M. Anthony, High-κ gate dielectrics: current status and materials properties considerations. J. Appl. Phys. 89, 5243–5275 (2001). https://doi.org/10.1063/1.1361065
  75. Z. Hu, Z. Wu, C. Han, J. He, Z. Ni, W. Chen, Two-dimensional transition metal dichalcogenides: interface and defect engineering. Chem. Soc. Rev. 47, 3100–3128 (2018). https://doi.org/10.1039/C8CS00024G
  76. B. Radisavljevic, A. Kis, Reply to 'Measurement of mobility in dual-gated MoS2 transistors'. Nat. Nanotechnol. 8, 147–148 (2013). https://doi.org/10.1038/nnano.2013.31
  77. D. Jariwala, V.K. Sangwan, L.J. Lauhon, T.J. Marks, M.C. Hersam, Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. ACS Nano 8, 1102–1120 (2014). https://doi.org/10.1021/nn500064s
  78. X. Li, J. Shan, W. Zhang, S. Su, L. Yuwen, L. Wang, Recent advances in synthesis and biomedical applications of two-dimensional transition metal dichalcogenide nanosheets. Small 13, 1602660 (2017). https://doi.org/10.1002/smll.201602660
  79. S. Kanungo, Presented at 2018 International Symposium on Devices, Circuits and Systems (ISDCS) Introduction to dielectrically modulated biological field effect transistor, 29–31 March, 2018
  80. H. Im, X.-J. Huang, B. Gu, Y.-K. Choi, A dielectric-modulated field-effect transistor for biosensing. Nat. Nanotechnol. 2, 430–434 (2007). https://doi.org/10.1038/nnano.2007.180
  81. D. Sarkar, W. Liu, X. Xie, A.C. Anselmo, S. Mitragotri, K. Banerjee, MoS2 field-effect transistor for next-generation label-free biosensors. ACS Nano 8, 3992–4003 (2014). https://doi.org/10.1021/nn5009148
  82. Y. Ohno, K. Maehashi, K. Matsumoto, Label-free biosensors based on aptamer-modified graphene field-effect transistors. J. Am. Chem. Soc. 132, 18012–18013 (2010). https://doi.org/10.1021/ja108127r
  83. Q. He, Z. Zeng, Z. Yin, H. Li, S. Wu, X. Huang, H. Zhang, Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications. Small 8, 2994–2999 (2012). https://doi.org/10.1002/smll.201201224
  84. E. Lee, Y.S. Yoon, D.-J. Kim, Two-dimensional transition metal dichalcogenides and metal oxide hybrids for gas sensing. ACS Sensors 3, 2045–2060 (2018). https://doi.org/10.1021/acssensors.8b01077
  85. Z. Wang, B. Mi, Environmental applications of 2D molybdenum disulfide (MoS2) nanosheets. Environ. Sci. Technol. 51, 8229–8244 (2017). https://doi.org/10.1021/acs.est.7b01466
  86. Q. Yue, Z. Shao, S. Chang, J. Li, Adsorption of gas molecules on monolayer MoS2 and effect of applied electric field. Nanoscale Res. Lett. 8, 425 (2013). https://doi.org/10.1186/1556-276x-8-425
  87. W.S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy et al., Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior. Appl. Phys. Lett. 101, 013107 (2012). https://doi.org/10.1063/1.4732522
  88. H. Li, Z. Yin, Q. He, H. Li, X. Huang et al., Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature. Small 8, 63–67 (2012). https://doi.org/10.1002/smll.201101016
  89. D.J. Late, Y.-K. Huang, B. Liu, J. Acharya, S.N. Shirodkar et al., Sensing behavior of atomically thin-layered MoS2 transistors. ACS Nano 7, 4879–4891 (2013). https://doi.org/10.1021/nn400026u
  90. Z. Zeng, Z. Yin, X. Huang, H. Li, Q. He, G. Lu, F. Boey, H. Zhang, Single-layer semiconducting nanosheets: high-yield preparation and device fabrication. Angew. Chem. Int. Ed. 50, 11093–11097 (2011). https://doi.org/10.1002/anie.201106004
  91. W. Choi, N. Choudhary, G.H. Han, J. Park, D. Akinwande, Y.H. Lee, Recent development of two-dimensional transition metal dichalcogenides and their applications. Mater. Today 20, 116–130 (2017). https://doi.org/10.1016/j.mattod.2016.10.002
  92. H. Im, A. AlMutairi, S. Kim, M. Sritharan, S. Kim, Y. Yoon, On MoS2 thin-film transistor design consideration for a NO2 gas sensor. ACS Sensors 4, 2930–2936 (2019). https://doi.org/10.1021/acssensors.9b01307
  93. J. Huang, J. Chu, Z. Wang, J. Zhang, A. Yang et al., Chemisorption of NO2 to MoS2 nanostructures and its effects for MoS2 sensors. ChemNanoMat 5, 1123–1130 (2019). https://doi.org/10.1002/cnma.201900350
  94. N. Huo, S. Yang, Z. Wei, S.-S. Li, J.-B. Xia, J. Li, Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes. Sci. Rep. 4, 5209 (2014). https://doi.org/10.1038/srep05209
  95. H. Li, J. Wu, Z. Yin, H. Zhang, Preparation and applications of mechanically exfoliated single-layer and multilayer MoS2 and WSe2 nanosheets. Acc. Chem. Res. 47, 1067–1075 (2014). https://doi.org/10.1021/ar4002312
  96. T. Wang, R. Zhao, X. Zhao, Y. An, X. Dai, C. Xia, Tunable donor and acceptor impurity states in a WSe2 monolayer by adsorption of common gas molecules. RSC Adv. 6, 82793–82800 (2016). https://doi.org/10.1039/C6RA17643G
  97. Y. Hong, W.-M. Kang, I.-T. Cho, J. Shin, M. Wu, J.-H. Lee, Gas-sensing characteristics of exfoliated WSe2 field-effect transistors. J. Nanosci. Nanotechnol. 17, 3151–3154 (2017). https://doi.org/10.1166/jnn.2017.14039
  98. K.Y. Ko, K. Park, S. Lee, Y. Kim, W.J. Woo et al., Recovery improvement for large-area tungsten diselenide gas sensors. ACS Appl. Mater. Interfaces 10, 23910–23917 (2018). https://doi.org/10.1021/acsami.8b07034
  99. Y.-F. Lin, Y. Xu, C.-Y. Lin, Y.-W. Suen, M. Yamamoto, S. Nakaharai, K. Ueno, K. Tsukagoshi, Origin of noise in layered MoTe2 transistors and its possible use for environmental sensors. Adv. Mater. 27, 6612–6619 (2015). https://doi.org/10.1002/adma.201502677
  100. M. Wu, C.-H. Kim, J. Shin, Y. Hong, X. Jin, J.-H. Lee, Effect of a pre-bias on the adsorption and desorption of oxidizing gases in FET-type sensor. Sens. Actuator B-Chem. 245, 122–128 (2017). https://doi.org/10.1016/j.snb.2017.01.110
  101. Y. Kim, K.C. Kwon, S. Kang, C. Kim, T.H. Kim et al., Two-dimensional NbS2 gas sensors for selective and reversible NO2 detection at room temperature. ACS Sensors 4, 2395–2402 (2019). https://doi.org/10.1021/acssensors.9b00992
  102. R. Chaurasiya, A. Dixit, Defect engineered MoSSe Janus monolayer as a promising two dimensional material for NO2 and NO gas sensing. Appl. Surf. Sci. 490, 204–219 (2019). https://doi.org/10.1016/j.apsusc.2019.06.049
  103. K.Y. Ko, S. Lee, K. Park, Y. Kim, W.J. Woo et al., High-performance gas sensor using a large-area WS2xSe2–2x alloy for low-power operation wearable applications. ACS Appl. Mater. Interfaces 10, 34163–34171 (2018). https://doi.org/10.1021/acsami.8b10455
  104. H.K. Choi, J. Park, N. Myoung, H.-J. Kim, J.S. Choi et al., Gas molecule sensing of van der Waals tunnel field effect transistors. Nanoscale 9, 18644–18650 (2017). https://doi.org/10.1039/C7NR05712A
  105. H.S. Hong, N.H. Phuong, N.T. Huong, N.H. Nam, N.T. Hue, Highly sensitive and low detection limit of resistive NO2 gas sensor based on a MoS2/graphene two-dimensional heterostructures. Appl. Surf. Sci. 492, 449–454 (2019). https://doi.org/10.1016/j.apsusc.2019.06.230
  106. Y. Han, Y. Liu, C. Su, S. Wang, H. Li et al., Interface engineered WS2/ZnS heterostructures for sensitive and reversible NO2 room temperature sensing. Sens. Actuator B-Chem. 296, 126666 (2019). https://doi.org/10.1016/j.snb.2019.126666
  107. M. Ikram, L. Liu, Y. Liu, L. Ma, H. Lv et al., Fabrication and characterization of a high-surface area MoS2@WS2 heterojunction for the ultra-sensitive NO2 detection at room temperature. J. Mater. Chem. A 7, 14602–14612 (2019). https://doi.org/10.1039/C9TA03452H
  108. W.-T. Koo, J.-H. Cha, J.-W. Jung, S.-J. Choi, J.-S. Jang, D.-H. Kim, I.-D. Kim, Few-layered WS2 nanoplates confined in Co, N-doped hollow carbon nanocages: abundant WS2 edges for highly sensitive gas sensors. Adv. Funct. Mater. 28, 1802575 (2018). https://doi.org/10.1002/adfm.201802575
  109. S.-Y. Cho, S.J. Kim, Y. Lee, J.-S. Kim, W.-B. Jung, H.-W. Yoo, J. Kim, H.-T. Jung, Highly enhanced gas adsorption properties in vertically aligned MoS2 layers. ACS Nano 9, 9314–9321 (2015). https://doi.org/10.1021/acsnano.5b04504
  110. M. Wu, J. Shin, Y. Hong, X. Jin, J. Lee, Pulse biasing scheme for the fast recovery of FET-type gas sensors for reducing gases. IEEE Electron Device Lett. 38, 971–974 (2017). https://doi.org/10.1109/LED.2017.2707592
  111. M. O’Brien, K. Lee, R. Morrish, N.C. Berner, N. McEvoy, C.A. Wolden, G.S. Duesberg, Plasma assisted synthesis of WS2 for gas sensing applications. Chem. Phys. Lett. 615, 6–10 (2014). https://doi.org/10.1016/j.cplett.2014.09.051
  112. X. Li, X. Li, Z. Li, J. Wang, J. Zhang, WS2 nanoflakes based selective ammonia sensors at room temperature. Sens. Actuator B-Chem. 240, 273–277 (2017). https://doi.org/10.1016/j.snb.2016.08.163
  113. Z. Feng, Y. Xie, E. Wu, Y. Yu, S. Zheng et al., Enhanced sensitivity of MoTe2 chemical sensor through light illumination. Micromachines 8, 155 (2017). https://doi.org/10.3390/mi8050155
  114. X. Huang, Z. Zeng, S. Bao, M. Wang, X. Qi, Z. Fan, H. Zhang, Solution-phase epitaxial growth of noble metal nanostructures on dispersible single-layer molybdenum disulfide nanosheets. Nat. Commun. 4, 1444 (2013). https://doi.org/10.1038/ncomms2472
  115. D. Sarkar, X. Xie, J. Kang, H. Zhang, W. Liu, J. Navarrete, M. Moskovits, K. Banerjee, Functionalization of transition metal dichalcogenides with metallic nanoparticles: implications for doping and gas-sensing. Nano Lett. 15, 2852–2862 (2015). https://doi.org/10.1021/nl504454u
  116. D. Zhang, Y.E. Sun, C. Jiang, Y. Zhang, Room temperature hydrogen gas sensor based on palladium decorated tin oxide/molybdenum disulfide ternary hybrid via hydrothermal route. Sens. Actuator B-Chem. 242, 15–24 (2017). https://doi.org/10.1016/j.snb.2016.11.005
  117. R. Samnakay, C. Jiang, S.L. Rumyantsev, M.S. Shur, A.A. Balandin, Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: comparison with graphene devices. Appl. Phys. Lett. 106, 023115 (2015). https://doi.org/10.1063/1.4905694
  118. F.K. Perkins, A.L. Friedman, E. Cobas, P.M. Campbell, G.G. Jernigan, B.T. Jonker, Chemical vapor sensing with monolayer MoS2. Nano Lett. 13, 668–673 (2013). https://doi.org/10.1021/nl3043079
  119. A.L. Friedman, F. Keith Perkins, E. Cobas, G.G. Jernigan, P.M. Campbell, A.T. Hanbicki, B.T. Jonker, Chemical vapor sensing of two-dimensional MoS2 field effect transistor devices. Solid State Electron. 101, 2–7 (2014). https://doi.org/10.1016/j.sse.2014.06.013
  120. A.L. Friedman, F.K. Perkins, A.T. Hanbicki, J.C. Culbertson, P.M. Campbell, Dynamics of chemical vapor sensing with MoS2 using 1T/2H phase contacts/channel. Nanoscale 8, 11445–11453 (2016). https://doi.org/10.1039/c6nr01979j
  121. C.C. Mayorga-Martinez, A. Ambrosi, A.Y.S. Eng, Z. Sofer, M. Pumera, Metallic 1T-WS2 for selective impedimetric vapor sensing. Adv. Funct. Mater. 25, 5611–5616 (2015). https://doi.org/10.1002/adfm.201502223
  122. G. Liu, S.L. Rumyantsev, C. Jiang, M.S. Shur, A.A. Balandin, Selective gas sensing with h-BN capped MoS2 heterostructure thin-film transistors. IEEE Electron Device Lett. 36, 1202–1204 (2015). https://doi.org/10.1109/LED.2015.2481388
  123. X. Chen, H. Pu, Z. Fu, X. Sui, J. Chang, J. Chen, S. Mao, Real-time and selective detection of nitrates in water using graphene-based field-effect transistor sensors. Environ. Sci. Nano 5, 1990–1999 (2018). https://doi.org/10.1039/C8EN00588E
  124. G.A.N. Gowda, D. Djukovic, in Overview of Mass Spectrometry-Based Metabolomics: Opportunities and Challenges, ed. by D. Raftery (Springer, New York, 2014), pp. 3–12
  125. A. Castellanos-Gomez, M. Poot, G.A. Steele, H.S.J. van der Zant, N. Agraït, G. Rubio-Bollinger, Elastic properties of freely suspended MoS2 nanosheets. Adv. Mater. 24, 772–775 (2012). https://doi.org/10.1002/adma.201103965
  126. M.-P. Lu, X.-Y. Dai, M.-Y. Lu, Probing electron mobility of monolayer MoS2 field-effect transistors in aqueous environments. Adv. Electron. Mater. 4, 1700418 (2018). https://doi.org/10.1002/aelm.201700418
  127. H. Wang, P. Zhao, X. Zeng, C.D. Young, W. Hu, High-stability pH sensing with a few-layer MoS2 field-effect transistor. Nanotechnology 30, 375203 (2019). https://doi.org/10.1088/1361-6528/ab277b
  128. K. Datta, A. Shadman, E. Rahman, Q.D.M. Khosru, Trilayer TMDC heterostructures for MOSFETs and nanobiosensors. J. Electron. Mater. 46, 1248–1260 (2017). https://doi.org/10.1007/s11664-016-5078-0
  129. P. Li, D. Zhang, Z. Wu, Flexible MoS2 sensor arrays for high performance label-free ion sensing. Sens. Actuator A-Phys. 286, 51–58 (2019). https://doi.org/10.1016/j.sna.2018.12.026
  130. J.H. An, J. Jang, A highly sensitive FET-type aptasensor using flower-like MoS2 nanospheres for real-time detection of arsenic(III). Nanoscale 9, 7483–7492 (2017). https://doi.org/10.1039/C7NR01661A
  131. N.M. Vieno, H. Härkki, T. Tuhkanen, L. Kronberg, Occurrence of pharmaceuticals in river water and their elimination in a pilot-scale drinking water treatment plant. Environ. Sci. Technol. 41, 5077–5084 (2007). https://doi.org/10.1021/es062720x
  132. H.-Y. Park, S.R. Dugasani, D.-H. Kang, G. Yoo, J. Kim et al., M-DNA/transition metal dichalcogenide hybrid structure-based bio-fet sensor with ultra-high sensitivity. Sci. Rep. 6, 35733 (2016). https://doi.org/10.1038/srep35733
  133. X. Chen, S. Hao, B. Zong, C. Liu, S. Mao, Ultraselective antibiotic sensing with complementary strand DNA assisted aptamer/MoS2 field-effect transistors. Biosens. Bioelectron. 145, 111711 (2019). https://doi.org/10.1016/j.bios.2019.111711
  134. J. Lee, P. Dak, Y. Lee, H. Park, W. Choi, M.A. Alam, S. Kim, Two-dimensional layered MoS2 biosensors enable highly sensitive detection of biomolecules. Sci. Rep. 4, 7352 (2014). https://doi.org/10.1038/srep07352
  135. M.H. Kim, H. Park, H. Lee, K. Nam, S. Jeong et al., Research Update: Nanoscale surface potential analysis of MoS2 field-effect transistors for biomolecular detection using Kelvin probe force microscopy. APL Mater. 4, 100701 (2016). https://doi.org/10.1063/1.4964488
  136. H. Nam, B.-R. Oh, P. Chen, J.S. Yoon, S. Wi, M. Chen, K. Kurabayashi, X. Liang, Two different device physics principles for operating MoS2 transistor biosensors with femtomolar-level detection limits. Appl. Phys. Lett. 107, 012105 (2015). https://doi.org/10.1063/1.4926800
  137. M. Kukkar, S.K. Tuteja, A.L. Sharma, V. Kumar, A.K. Paul, K.-H. Kim, P. Sabherwal, A. Deep, A new electrolytic synthesis method for few-layered MoS2 nanosheets and their robust biointerfacing with reduced antibodies. ACS Appl. Mater. Interfaces 8, 16555–16563 (2016). https://doi.org/10.1021/acsami.6b03079
  138. H. Park, G. Han, S.W. Lee, H. Lee, S.H. Jeong et al., Label-free and recalibrated multilayer MoS2 biosensor for point-of-care diagnostics. ACS Appl. Mater. Interfaces 9, 43490–43497 (2017). https://doi.org/10.1021/acsami.7b14479
  139. H. Nam, B.-R. Oh, M. Chen, S. Wi, D. Li, K. Kurabayashi, X. Liang, Fabrication and comparison of MoS2 and WSe2 field-effect transistor biosensors. J. Vac. Sci. Technol. B 33, 6 (2015). https://doi.org/10.1116/1.4930040
  140. M. Sajid, A. Osman, G.U. Siddiqui, H.B. Kim, S.W. Kim, J.B. Ko, Y.K. Lim, K.H. Choi, All-printed highly sensitive 2D MoS2 based multi-reagent immunosensor for smartphone based point-of-care diagnosis. Sci. Rep. 7, 5802–5802 (2017). https://doi.org/10.1038/s41598-017-06265-1
  141. H. Park, H. Lee, S.H. Jeong, E. Lee, W. Lee et al., MoS2 field-effect transistor-amyloid-β1–42 hybrid device for signal amplified detection of MMP-9. Anal. Chem. 91, 8252–8258 (2019). https://doi.org/10.1021/acs.analchem.9b00926
  142. X. Gong, Y. Liu, H. Xiang, H. Liu, Z. Liu et al., Membraneless reproducible MoS2 field-effect transistor biosensor for high sensitive and selective detection of FGF21. Sci. China Mater. 62, 1479–1487 (2019). https://doi.org/10.1007/s40843-019-9444-y
  143. B. Ryu, H. Nam, B.-R. Oh, Y. Song, P. Chen et al., Cyclewise operation of printed MoS2 transistor biosensors for rapid biomolecule quantification at femtomolar levels. ACS Sensors 2, 274–281 (2017). https://doi.org/10.1021/acssensors.6b00795
  144. D.-W. Lee, J. Lee, I.Y. Sohn, B.-Y. Kim, Y.M. Son et al., Field-effect transistor with a chemically synthesized MoS2 sensing channel for label-free and highly sensitive electrical detection of DNA hybridization. Nano Res. 8, 2340–2350 (2015). https://doi.org/10.1007/s12274-015-0744-8
  145. K. Jin, L. Xie, Y. Tian, D. Liu, Au-modified monolayer MoS2 sensor for DNA detection. J. Phys. Chem. C 120, 11204–11209 (2016). https://doi.org/10.1021/acs.jpcc.6b01193
  146. K. Liu, J. Feng, A. Kis, A. Radenovic, Atomically thin molybdenum disulfide nanopores with high sensitivity for DNA translocation. ACS Nano 8, 2504–2511 (2014). https://doi.org/10.1021/nn406102h
  147. L. Liang, F. Liu, Z. Kong, J.-W. Shen, H. Wang, H. Wang, L. Li, Theoretical studies on key factors in DNA sequencing using atomically thin molybdenum disulfide nanopores. Phys. Chem. Chem. Phys. 20, 28886–28893 (2018). https://doi.org/10.1039/C8CP06167J
  148. W. Si, Y. Zhang, J. Sha, Y. Chen, Controllable and reversible DNA translocation through a single-layer molybdenum disulfide nanopore. Nanoscale 10, 19450–19458 (2018). https://doi.org/10.1039/C8NR05830J
  149. M. Graf, M. Lihter, D. Altus, S. Marion, A. Radenovic, Transverse detection of DNA using a MoS2 nanopore. Nano Lett. 19, 9075–9083 (2019). https://doi.org/10.1021/acs.nanolett.9b04180
  150. A. Moudgil, S. Singh, N. Mishra, P. Mishra, S. Das, MoS2/TiO2 hybrid nanostructure-based field-effect transistor for highly sensitive, selective, and rapid detection of gram-positive bacteria. Adv. Mater. Technol. 5, 1900615 (2019). https://doi.org/10.1002/admt.201900615
  151. P. Zhang, S. Yang, R. Pineda-Gómez, B. Ibarlucea, J. Ma et al., Electrochemically exfoliated high-quality 2H-MoS2 for multiflake thin film flexible biosensors. Small 15, 1901265 (2019). https://doi.org/10.1002/smll.201901265
  152. X. Li, H. Zhu, Two-dimensional MoS2: properties, preparation, and applications. J. Materiomics. 1, 33–44 (2015). https://doi.org/10.1016/j.jmat.2015.03.003
  153. H. Yang, A. Giri, S. Moon, S. Shin, J.-M. Myoung, U. Jeong, Highly scalable synthesis of MoS2 thin films with precise thickness control via polymer-assisted deposition. Chem. Mater. 29, 5772–5776 (2017). https://doi.org/10.1021/acs.chemmater.7b01605
  154. T.H. Kim, Y.H. Kim, S.Y. Park, S.Y. Kim, H.W. Jang, Two-dimensional transition metal disulfides for chemoresistive gas sensing: perspective and challenges. Chemosensors 5, 15 (2017). https://doi.org/10.3390/chemosensors5020015
  155. H.U. Hassan, J. Mun, B.S. Kang, J.Y. Song, T. Kim, S.-W. Kang, Sensor based on chemical vapour deposition-grown molybdenum disulphide for gas sensing application. RSC Adv. 6, 75839–75843 (2016). https://doi.org/10.1039/C6RA10132A
  156. D. Zhang, J. Wu, P. Li, Y. Cao, Room-temperature SO2 gas-sensing properties based on a metal-doped MoS2 nanoflower: an experimental and density functional theory investigation. J. Mater. Chem. A 5, 20666–20677 (2017). https://doi.org/10.1039/C7TA07001B
  157. K. Lee, R. Gatensby, N. McEvoy, T. Hallam, G.S. Duesberg, High-performance sensors based on molybdenum disulfide thin films. Adv. Mater. 25, 6699–6702 (2013). https://doi.org/10.1002/adma.201303230
  158. D. Zhang, C. Jiang, Y.E. Sun, Room-temperature high-performance ammonia gas sensor based on layer-by-layer self-assembled molybdenum disulfide/zinc oxide nanocomposite film. J. Alloys Compd. 698, 476–483 (2017). https://doi.org/10.1016/j.jallcom.2016.12.222
  159. Z. Qin, C. Ouyang, J. Zhang, L. Wan, S. Wang, C. Xie, D. Zeng, 2D WS2 nanosheets with TiO2 quantum dots decoration for high-performance ammonia gas sensing at room temperature. Sens. Actuator B-Chem. 253, 1034–1042 (2017). https://doi.org/10.1016/j.snb.2017.07.052
  160. N.P. Rezende, A.R. Cadore, A.C. Gadelha, C.L. Pereira, V. Ornelas et al., Probing the electronic properties of monolayer MoS2 via interaction with molecular hydrogen. Adv. Electron. Mater. 5, 1800591 (2019). https://doi.org/10.1002/aelm.201800591
  161. X. Li, J. Wang, D. Xie, J. Xu, Y. Xia, L. Xiang, S. Komarneni, Reduced graphene oxide/MoS2 hybrid films for room-temperature formaldehyde detection. Mater. Lett. 189, 42–45 (2017). https://doi.org/10.1016/j.matlet.2016.11.046
  162. S.T. Le, N.B. Guros, R.C. Bruce, A. Cardone, N.D. Amin et al., Quantum capacitance-limited MoS2 biosensors enable remote label-free enzyme measurements. Nanoscale 11, 15622–15632 (2019). https://doi.org/10.1039/C9NR03171E
Read More
Author biographies are not available.
Download this PDF file
PDF
Statistic
Read Counter : 5089 Download : 3859