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Vol. 6 No. 3 (2014)

Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon

https://doi.org/10.1007/BF03353793
Jingqi Li
Nanofab, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
Weisheng Yue
Nanofab, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
Zaibing Guo
Nanofab, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
Yang Yang
Nanofab, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
Xianbin Wang
Nanofab, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
AhadA. Syed
Nanofab, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
Yafei Zhang
Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, School of Electronics, Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China

Corresponding Author: Yafei Zhang

yfzhang@sjtu.edu.cn

Nano-Micro Letters, Vol. 6 No. 3 (2014), Article Number: 287-292

Abstract

A vertical carbon nanotube field-effect transistor (CNTFET) based on silicon (Si) substrate has been proposed and simulated using a semi-classical theory. A single-walled carbon nanotube (SWNT) and an n-type Si nanowire in series construct the channel of the transistor. The CNTFET presents ambipolar characteristics at positive drain voltage (Vd) and n-type characteristics at negative Vd. The current is significantly influenced by the doping level of n-Si and the SWNT band gap. The n-branch current of the ambipolar characteristics increases with increasing doping level of the n-Si while the p-branch current decreases. The SWNT band gap has the same influence on the p-branch current at a positive Vd and n-type characteristics at negative Vd. The lower the SWNT band gap, the higher the current. However, it has no impact on the n-branch current in the ambipolar characteristics. Thick oxide is found to significantly degrade the current and the subthreshold slope of the CNTFETs.

Keywords

Field-effect transistors Semi-classical simulation
Li, Jingqi, Weisheng Yue, Zaibing Guo, Yang Yang, Xianbin Wang, AhadA. Syed, and Yafei Zhang. 2014. “Unique Characteristics of Vertical Carbon Nanotube Field-Effect Transistors on Silicon”. Nano-Micro Letters 6 (3):287-92. https://doi.org/10.1007/BF03353793.
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