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Vol. 6 No. 3 (2014)

Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon

https://doi.org/10.1007/BF03353793
Jingqi Li
Nanofab, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
Weisheng Yue
Nanofab, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
Zaibing Guo
Nanofab, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
Yang Yang
Nanofab, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
Xianbin Wang
Nanofab, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
AhadA. Syed
Nanofab, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
Yafei Zhang
Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, School of Electronics, Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China

Corresponding Author: Yafei Zhang

yfzhang@sjtu.edu.cn

Nano-Micro Letters, Vol. 6 No. 3 (2014), Article Number: 287-292

Abstract

A vertical carbon nanotube field-effect transistor (CNTFET) based on silicon (Si) substrate has been proposed and simulated using a semi-classical theory. A single-walled carbon nanotube (SWNT) and an n-type Si nanowire in series construct the channel of the transistor. The CNTFET presents ambipolar characteristics at positive drain voltage (Vd) and n-type characteristics at negative Vd. The current is significantly influenced by the doping level of n-Si and the SWNT band gap. The n-branch current of the ambipolar characteristics increases with increasing doping level of the n-Si while the p-branch current decreases. The SWNT band gap has the same influence on the p-branch current at a positive Vd and n-type characteristics at negative Vd. The lower the SWNT band gap, the higher the current. However, it has no impact on the n-branch current in the ambipolar characteristics. Thick oxide is found to significantly degrade the current and the subthreshold slope of the CNTFETs.

Keywords

Field-effect transistors Semi-classical simulation
Li, Jingqi, Weisheng Yue, Zaibing Guo, Yang Yang, Xianbin Wang, AhadA. Syed, and Yafei Zhang. 2014. “Unique Characteristics of Vertical Carbon Nanotube Field-Effect Transistors on Silicon”. Nano-Micro Letters 6 (3):287-92. https://doi.org/10.1007/BF03353793.
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References
  1. R. H. Dennard, F. H. Gaensslen, H.-N. Yu, V. L. Rideout, E. Bassous and A. R. LeBlance, “Design of ion-implanted MOSFET’s with very small physical dimensions”, IEEE J. Solid-State Circuits 9(5), 256–268 (1974). http://dx.doi.org/10.1109/JSSC.1974.1050511
  2. M. Ieong, B. Doris, J. kedzierski, K. Rim and M. Yang, “Silicon device scaling to the sub-10-nm regime”, Science 306(5704), 2057–2060 (2004). http://dx.doi.org/10.1126/science.1100731
  3. Ph. Avouris, “Carbon nanotube electronics and photonics”, Phys. Today 62(1), 34–40 (2009). http://dx.doi.org/10.1063/1.3074261
  4. Min Zhang, “Improving the Electrical Contact Property of Single-Walled Carbon Nanotube Ar-rays by Electrodeposition”, Nano-Micro Lett. 5(4), 242–246 (2013). http://dx.doi.org/10.5101/nml.v5i4.p242-246
  5. Q. Cao and S.-J. Han, “Single-walled carbon nanotubes for high-performance electronics”, Nanoscale 5(19), 8852–8863 (2013). http://dx.doi.org/10.1039/c3nr02966b
  6. A. D. Franklin, M. Luisier, S.-J. Han, G. Tulevski, C. M. Breslin, L. Gignac, M. S. Lundstrom and W. Haensch, “Sub-10 nm carbon nanotube transistor”, Nano Lett. 12(2), 758–762 (2012). http://dx.doi.org/10.1021/nl203701g
  7. F. Kreupl, “Carbon nanotubes finally deliver”, Nature 484, 321-322 (2012). http://dx.doi.org/10.1038/484321a
  8. J. Li, C. Zhao, Q. Wang, Q. Zhang, Z. Wang, X. Zhang, A. I. Abutaha and H. N. Alshareef, “Vertically aligned carbon nanotube field-effect transistors”, Carbon 50(12), 4628–4632 (2012). http://dx.doi.org/10.1016/j.carbon.2012.05.049
  9. J. Li, Q. Wang, W. Yue, Z. Guo, L. Li, C. Zhao, X. Wang, A. I. Abutaha, H. N. Alshareef, Y. Zhang and X. Zhang, “Integrating carbon nanotubes to Si by means of vertical carbon nanotube field-effect transistors”, Nanoscale, accept. http://dx.doi.org/10.1039/C4NR00978A
  10. J. Mores, “Turning the world vertical: MOSFETs with current flow perpendicular to the wafer surface”, Appl. Phys. A 87(3), 531–537 (2007). http://dx.doi.org/10.1007/s00339-007-3986-9
  11. N. Rouhi, D. Jain, K. Zand and P. J. Burke, “Fundamental limits on the mobility of nanotube-based semiconducting inks”, Adv. Mater. 23(1), 94–99 (2011). http://dx.doi.org/10.1002/adma.201003281
  12. M. Engel, J. P. Small, M. Steiner, M. Freitag, A. A. Green, M. C. Hersam and Ph. Avouris, “Thin film nanotube transistors based on self-assembled, aligned, semiconducting carbon nanotube arrays”, ACS Nano 2(12), 2445–2452 (2008). http://dx.doi.org/10.1021/nn800708w
  13. S. Heinze, M. Radosavljevic, J. Tersoff and Ph. Avouris, “Unexpected scaling of the performance of carbon nanotube Schottky-barrier transistors”, Phys. Rev. B 68, 235418 (2003). http://dx.doi.org/10.1103/PhysRevB.68.235418
  14. S. Heinze, J. Tersoff and Ph. Avouris, “Electrostatic engineering of nanotube transistors for improved performance”, Appl. Phys. Lett. 83(24), 5038–5040 (2003). http://dx.doi.org/10.1063/1.1632531
  15. J. Li, Q. Zhang and M. B. Chan-Park, “Simulation of carbon nanotube based p-n junction diodes”, Carbon 44(14), 3087–3090 (2006). http://dx.doi.org/10.1016/j.carbon.2006.04.041
  16. J. Li, Y. C. Cheng, Z. B. Guo, Z. H. Wang, Z. Y. Zhu, Q. Zhang, M. B. Chan-Park, U. Schwingenschlögl and X. X. Zhang, “Influence of contact height on the performance of vertically aligned carbon nanotube field-effect transistors”, Nanoscale 5(6), 2476–2481 (2013). http://dx.doi.org/10.1039/c3nr33263b
  17. W. Zhang, C. Chen and Y. Zhang, “Modeling of carbon nanotube field-effect transistor with nanowelding treatment”, Microelectron. J. 40(12), 1681–1685 (2009). http://dx.doi.org/10.1016/j.mejo.2009.08.002
  18. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller and Ph. Avouris, “Carbon nanotubes as Schottky barrier transistors”, Phys. Rev. Lett. 89, 106801 (2002). http://dx.doi.org/10.1103/PhysRevLett.89.106801
  19. A. Javey, J. Guo, Q. Wang, M. Lundstrom and H. Dai, “Ballistic carbon nanotube field-effect transistors”, Nature 424(7), 654–657 (2003). http://dx.doi.org/10.1038/nature01797
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