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Vol. 16 (2024)

The Roadmap of 2D Materials and Devices Toward Chips

https://doi.org/10.1007/s40820-023-01273-5
Anhan Liu
School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100049, People’s Republic of China
Xiaowei Zhang
School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100049, People’s Republic of China
Ziyu Liu
School of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China
Yuning Li
School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing 100044, People’s Republic of China
Xueyang Peng
High‑Frequency High‑Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China
Xin Li
State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan 030051, People’s Republic of China
Yue Qin
State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan 030051, People’s Republic of China
Chen Hu
High‑Frequency High‑Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China
Yanqing Qiu
High‑Frequency High‑Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China
Han Jiang
School of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China
Yang Wang
School of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China
Yifan Li
School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100049, People’s Republic of China
Jun Tang
State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan 030051, People’s Republic of China
Jun Liu
State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan 030051, People’s Republic of China
Hao Guo
State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan 030051, People’s Republic of China
Tao Deng
School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing 100044, People’s Republic of China
Songang Peng
High‑Frequency High‑Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China
He Tian
School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100049, People’s Republic of China
Tian‑Ling Ren
School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100049, People’s Republic of China

Corresponding Author: Tian‑Ling Ren

RenTL@tsinghua.edu.cn

Nano-Micro Letters, Vol. 16 (2024), Article Number: 119

Abstract

Due to the constraints imposed by physical effects and performance degradation, silicon-based chip technology is facing certain limitations in sustaining the advancement of Moore’s law. Two-dimensional (2D) materials have emerged as highly promising candidates for the post-Moore era, offering significant potential in domains such as integrated circuits and next-generation computing. Here, in this review, the progress of 2D semiconductors in process engineering and various electronic applications are summarized. A careful introduction of material synthesis, transistor engineering focused on device configuration, dielectric engineering, contact engineering, and material integration are given first. Then 2D transistors for certain electronic applications including digital and analog circuits, heterogeneous integration chips, and sensing circuits are discussed. Moreover, several promising applications (artificial intelligence chips and quantum chips) based on specific mechanism devices are introduced. Finally, the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed, and potential development pathways or roadmaps are further speculated and outlooked.


Highlights:
1 This review introduces the potential of 2D electronics for post-Moore era and discusses their current progress in digital circuits, analog circuits, heterogeneous integration, sensing circuits, artificial intelligence chips, and quantum chips in sequence.
2 A comprehensive analysis of the current trends and challenges encountered in the development of 2D materials is summarized.
3 An in-depth roadmap outlining the future development of 2D electronics is presented, and the most accessible and promising avenues for 2D electronics are suggested.

Keywords

Two-dimensional materials Roadmap Integrated circuits Post-Moore era
Liu, Anhan, Xiaowei Zhang, Ziyu Liu, Yuning Li, Xueyang Peng, Xin Li, Yue Qin, Chen Hu, Yanqing Qiu, Han Jiang, Yang Wang, Yifan Li, Jun Tang, Jun Liu, Hao Guo, Tao Deng, Songang Peng, He Tian, and Tian‑Ling Ren. 2024. “The Roadmap of 2D Materials and Devices Toward Chips”. Nano-Micro Letters 16 (February):119. https://doi.org/10.1007/s40820-023-01273-5.
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