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Vol. 10 No. 2 (2018)

Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition

https://doi.org/10.1007/s40820-017-0173-1
Lixuan Tai
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People’s Republic of China
Daming Zhu
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People’s Republic of China
Xing Liu
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People’s Republic of China
Tieying Yang
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People’s Republic of China
Lei Wang
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People’s Republic of China
Rui Wang
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People’s Republic of China
Sheng Jiang
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People’s Republic of China
Zhenhua Chen
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People’s Republic of China
Zhongmin Xu
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People’s Republic of China
Xiaolong Li
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People’s Republic of China

Corresponding Author: Xiaolong Li

lixiaolong@sinap.ac.cn

Nano-Micro Letters, Vol. 10 No. 2 (2018), Article Number: 20

Abstract

The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient-pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates.


Highlights:


1 Graphene was successfully grown on single-crystal silicon substrates using metal-free, ambient-pressure chemical vapor deposition.
2 Atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains can be produced by controlling the growth temperature.
3 In-plane propagation, edge-propagation, and core-propagation processes are proposed to evaluate the sequentially changing graphene domains.

Keywords

Graphene Silicon Metal-free CVD Domain growth
Tai, Lixuan, Daming Zhu, Xing Liu, Tieying Yang, Lei Wang, Rui Wang, Sheng Jiang, Zhenhua Chen, Zhongmin Xu, and Xiaolong Li. 2017. “Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition”. Nano-Micro Letters 10 (2):20. https://doi.org/10.1007/s40820-017-0173-1.
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