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Vol. 10 No. 2 (2018)

Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition

https://doi.org/10.1007/s40820-017-0173-1
Lixuan Tai
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People’s Republic of China
Daming Zhu
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People’s Republic of China
Xing Liu
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People’s Republic of China
Tieying Yang
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People’s Republic of China
Lei Wang
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People’s Republic of China
Rui Wang
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People’s Republic of China
Sheng Jiang
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People’s Republic of China
Zhenhua Chen
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People’s Republic of China
Zhongmin Xu
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People’s Republic of China
Xiaolong Li
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, People’s Republic of China

Corresponding Author: Xiaolong Li

lixiaolong@sinap.ac.cn

Nano-Micro Letters, Vol. 10 No. 2 (2018), Article Number: 20

Abstract

The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient-pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates.


Highlights:


1 Graphene was successfully grown on single-crystal silicon substrates using metal-free, ambient-pressure chemical vapor deposition.
2 Atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains can be produced by controlling the growth temperature.
3 In-plane propagation, edge-propagation, and core-propagation processes are proposed to evaluate the sequentially changing graphene domains.

Keywords

Graphene Silicon Metal-free CVD Domain growth
Tai, Lixuan, Daming Zhu, Xing Liu, Tieying Yang, Lei Wang, Rui Wang, Sheng Jiang, Zhenhua Chen, Zhongmin Xu, and Xiaolong Li. 2017. “Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition”. Nano-Micro Letters 10 (2):20. https://doi.org/10.1007/s40820-017-0173-1.
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References
  1. A.K. Geim, K.S. Novoselov, The rise of grapheme. Nat. Mater. 6(3), 183–191 (2007). https://doi.org/10.1038/nmat1849
  2. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, A.A. Firsov, Electric field effect in atomically thin carbon films. Science 306(5696), 666–669 (2004). https://doi.org/10.1126/science.1102896
  3. X. Li, W. Cai, L. Colombo, R.S. Ruoff, Evolution of graphene growth on Ni and Cu by carbon isotope labeling. Nano Lett. 9(12), 4268–4272 (2009). https://doi.org/10.1021/nl902515k
  4. K.S. Kim, Y. Zhao, H. Jang, S.Y. Lee, J.M. Kim, J.-H. Ahn, P. Kim, J.-Y. Choi, B.H. Hong, Large-scale pattern growth of graphene films for stretchable transparent electrodes. Nature 457(7230), 706–710 (2009). https://doi.org/10.1038/nature07719
  5. L. Gao, W. Ren, H. Xu, L. Jin, Z. Wang et al., Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum. Nat. Commun. 3, 699 (2012). https://doi.org/10.1038/ncomms1702
  6. Y. Liu, M. Xu, X. Zhu, M. Xie, Y. Su, N. Hu, Z. Yang, Y.F. Zhang, Synthesis of carbon nanotubes on graphene quantum dot surface by catalyst free chemical vapor deposition. Carbon 68, 399–405 (2014). https://doi.org/10.1016/j.carbon.2013.11.016
  7. X. Li, W. Cai, J. An, S. Kim, J. Nah et al., Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 324(5932), 1312–1314 (2009). https://doi.org/10.1126/science.1171245
  8. Y. Jia, X. Gong, P. Peng, Z. Wang, Z. Tian, L. Ren, Y. Fu, H. Zhang, Toward high carrier mobility and low contact resistance: laser cleaning of PMMA residues on graphene surfaces. Nano Micro Lett. 8(4), 336–346 (2016). https://doi.org/10.1007/s40820-016-0093-5
  9. J.-H. Lee, E.K. Lee, W.-J. Joo, Y. Jang, B.-S. Kim et al., Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium. Science 344(6181), 286–289 (2014). https://doi.org/10.1126/science.1252268
  10. A.M. Scaparro, V. Miseikis, C. Coletti, A. Notargiacomo, M. Pea, M. De Seta, L. Di Gaspare, Investigating the CVD synthesis of graphene on Ge (100): toward layer-by-layer growth. ACS Appl. Mater. Interfaces 8(48), 33083–33090 (2016). https://doi.org/10.1021/acsami.6b11701
  11. S. Tongay, T. Schumann, X. Miao, B.R. Appleton, A.F. Hebard, Tuning Schottky diodes at the many-layer-graphene/semiconductor interface by doping. Carbon 49(6), 2033–2038 (2011). https://doi.org/10.1016/j.carbon.2011.01.029
  12. S. Tongay, M. Lemaitre, X. Miao, B. Gila, B.R. Appleton, A.F. Hebard, Rectification at graphene–semiconductor interfaces: zero-gap semiconductor-based diodes. Phys. Rev. X 2(1), 011002 (2012). https://doi.org/10.1103/PhysRevX.2.011002
  13. Y. Lin, X. Li, D. Xie, T. Feng, Y. Chen et al., Graphene/semiconductor heterojunction solar cells with modulated antireflection and graphene work function. Energy Environ. Sci. 6(1), 108–115 (2013). https://doi.org/10.1039/C2EE23538B
  14. C.-C. Chen, M. Aykol, C.-C. Chang, A.F.J. Levi, S.B. Cronin, Graphene–silicon Schottky diodes. Nano Lett. 11(5), 1863–1867 (2011). https://doi.org/10.1021/nl104364c
  15. X. An, F. Liu, Y.J. Jung, S. Kar, Tunable graphene–silicon heterojunctions for ultrasensitive photodetection. Nano Lett. 13(3), 909–916 (2013). https://doi.org/10.1021/nl303682j
  16. K. Ruan, K. Ding, Y. Wang, S. Diao, Z. Shao, X. Zhang, J. Jie, Flexible graphene/silicon heterojunction solar cells. J. Mater. Chem. A 3(27), 14370–14377 (2015). https://doi.org/10.1039/C5TA03652F
  17. W. Strupinski, K. Grodecki, A. Wysmolek, R. Stepniewski, T. Szkopek et al., Graphene epitaxy by chemical vapor deposition on SiC. Nano Lett. 11(4), 1786–1791 (2011). https://doi.org/10.1021/nl200390e
  18. J. Chen, Y. Wen, Y. Guo, B. Wu, L. Huang et al., Oxygen-aided synthesis of polycrystalline graphene on silicon dioxide substrates. J. Am. Chem. Soc. 133(44), 17548–17551 (2011). https://doi.org/10.1021/ja2063633
  19. D. Wei, Y. Lu, C. Han, T. Niu, W. Chen, A.T.S. Wee, Critical crystal growth of graphene on dielectric substrates at low temperature for electronic devices. Angew. Chem. Int. Ed. 52(52), 14121–14126 (2013). https://doi.org/10.1002/anie.201306086
  20. Q. Wang, P. Zhang, Q. Zhuo, X. Lv, J. Wang, X. Sun, Direct synthesis of Co-doped graphene on dielectric substrates using solid carbon sources. Nano Micro Lett. 7(4), 368–373 (2015). https://doi.org/10.1007/s40820-015-0052-6
  21. Q.-Q. Zhuo, Q. Wang, Y.-P. Zhang, D. Zhang, Q.-L. Li et al., Transfer-free synthesis of doped and patterned graphene films. ACS Nano 9(1), 594–601 (2015). https://doi.org/10.1021/nn505913v
  22. W.T.E. Beld, A. Berga, J.C.T. Eijkela, Spatial control of direct chemical vapor deposition of graphene on silicon dioxide by directional copper dewetting. RSC Adv. 6(92), 89380–89386 (2016). https://doi.org/10.1039/C6RA16935J
  23. J. Sun, Y. Chen, M.K. Priydarshi, Z. Chen, A. Bachmatiuk et al., Direct chemical vapor deposition-derived graphene glasses targeting wide ranged applications. Nano Lett. 15(9), 5846–5854 (2015). https://doi.org/10.1021/acs.nanolett.5b01936
  24. A. Ismach, C. Druzgalski, S. Penwell, A. Schwartzberg, M. Zheng, A. Javey, J. Bokor, Y. Zhang, Direct chemical vapor deposition of graphene on dielectric surfaces. Nano Lett. 10(5), 1542–1548 (2010). https://doi.org/10.1021/nl9037714
  25. M.A. Fanton, J.A. Robinson, C. Puls, Y. Liu, M.J. Hollander et al., Characterization of graphene films and transistors grown on sapphire by metal-free chemical vapor deposition. ACS Nano 5(10), 8062–8069 (2011). https://doi.org/10.1021/nn202643t
  26. J. Hwang, M. Kim, D. Campbell, H.A. Alsalman, J.Y. Kwak et al., Van der waals epitaxial growth of graphene on sapphire by chemical vapor deposition without a metal catalyst. ACS Nano 7(1), 385–395 (2012). https://doi.org/10.1021/nn305486x
  27. J. Chen, Y. Guo, Y. Wen, L. Huang, Y. Xue et al., Two-stage metal-catalyst-free growth of high-quality polycrystalline graphene films on silicon nitride substrates. Adv. Mater. 25(7), 992–997 (2013). https://doi.org/10.1002/adma.201202973
  28. J. Sun, T. Gao, X. Song, Y. Zhao, Y. Lin et al., Direct growth of high-quality graphene on high-κ dielectric SrTiO3 substrates. J. Am. Chem. Soc. 136(18), 6574–6577 (2014). https://doi.org/10.1021/ja5022602
  29. M. Wang, S.K. Jang, W.J. Jang, M. Kim, S.Y. Park et al., A platform for large-scale graphene electronics-CVD growth of single-layer graphene on CVD-grown hexagonal boron nitride. Adv. Mater. 25(19), 2746–2752 (2013). https://doi.org/10.1002/adma.201204904
  30. S. Tang, G. Ding, X. Xie, J. Chen, C. Wang, X. Ding, F. Huang, W. Lu, M. Jiang, Nucleation and growth of single crystal graphene on hexagonal boron nitride. Carbon 50(1), 329–331 (2012). https://doi.org/10.1016/j.carbon.2011.07.062
  31. S. Tang, H. Wang, H.S. Wang, Q. Sun, X. Zhang et al., Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride. Nat. Commun. 6, 6499 (2015). https://doi.org/10.1038/ncomms7499
  32. J. Hackley, D. Ali, J. DiPasquale, J. Demaree, C. Richardson, Graphitic carbon growth on Si(111) using solid source molecular beam epitaxy. Appl. Phys. Lett. 95(13), 133114 (2009). https://doi.org/10.1063/1.3242029
  33. P.T. Trung, F. Joucken, J. Campos-Delgado, J.-P. Raskin, B. Hackens, R. Sporken, Direct growth of graphitic carbon on Si(111). Appl. Phys. Lett. 102(1), 013118 (2013). https://doi.org/10.1063/1.4773989
  34. K.B. Kim, C.M. Lee, J. Choi, Catalyst-free direct growth of triangular nano-graphene on all substrates. J. Phys. Chem. C 115(30), 14488–14493 (2011). https://doi.org/10.1021/jp2017709
  35. D. Zhu, H. Gao, X. Zhang, T. Yang, L. Li et al., Real-time observation of graphene layer growth: coupling of the interlayer spacing with thickness. Carbon 94, 775–780 (2015). https://doi.org/10.1016/j.carbon.2015.07.047
  36. H. Wang, X. Xu, J. Li, L. Lin, L. Sun et al., Surface monocrystallization of copper foil for fast growth of large single-crystal graphene under free molecular flow. Adv. Mater. 28(40), 8968–8974 (2016). https://doi.org/10.1002/adma.201603579
  37. G. Socrates, Infrared and Raman Characteristic Group Frequencies: Tables and Charts (Wiley, Chichester, 2004)
  38. A.C. Ferrari, J. Robertson, Resonant Raman spectroscopy of disordered, amorphous, and diamond like carbon. Phys. Rev. B 64(7), 075414 (2001). https://doi.org/10.1103/PhysRevB.64.075414
  39. Y. Hao, M.S. Bharathi, L. Wang, Y. Liu, H. Chen et al., The role of surface oxygen in the growth of large single-crystal graphene on copper. Science 342(6159), 720–723 (2013). https://doi.org/10.1126/science.1243879
  40. A.C. Ferrari, J.C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri et al., Raman spectrum of graphene and graphene layers. Phys. Rev. Lett. 97(18), 187401 (2006). https://doi.org/10.1103/PhysRevLett.97.187401
  41. J. Lee, K.S. Novoselov, H.S. Shin, Interaction between metal and graphene: dependence on the layer number of graphene. ACS Nano 5(1), 608–612 (2011). https://doi.org/10.1021/nn103004c
  42. G. Lippert, J. Dabrowski, M. Lemme, C. Marcus, O. Seifarth, G. Lupina, Direct graphene growth on insulator. Phys. Status Solidi B 248(11), 2619–2622 (2011). https://doi.org/10.1002/pssb.201100052
  43. G. Hong, Q.H. Wu, J. Ren, S.T. Lee, Mechanism of non-metal catalytic growth of graphene on silicon. Appl. Phys. Lett. 100(23), 231604 (2012). https://doi.org/10.1063/1.4726114
  44. L. Huang, Y. Yu, C. Li, L. Cao, Substrate mediation in vapor deposition growth of layered chalcogenide nanoplates: a case study of SnSe2. J. Phys. Chem. C 117(12), 6469–6475 (2013). https://doi.org/10.1021/jp400274a
  45. M. Losurdo, M.M. Giangregorio, P. Capezzuto, G. Bruno, Graphene CVD growth on copper and nickel: role of hydrogen in kinetics and structure. Phys. Chem. Chem. Phys. 13(46), 20836–20843 (2011). https://doi.org/10.1039/c1cp22347j
  46. L. Qi, J.Y. Huang, J. Feng, J. Li, In situ observations of the nucleation and growth of atomically sharp graphene bilayer edges. Carbon 48(8), 2354–2360 (2010). https://doi.org/10.1016/j.carbon.2010.03.018
  47. J.Y. Huang, F. Ding, B.I. Yakobson, P. Lu, L. Qi, J. Li, In situ observation of graphene sublimation and multi-layer edge reconstructions. Proc. Natl. Acad. Sci. 106(25), 10103–10108 (2009). https://doi.org/10.1073/pnas.0905193106
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