Issue

Vol. 18 (2026)

Gas-Phase Construction of Compact Capping Layers for High-Performance Halide Perovskite X-Ray Detectors

https://doi.org/10.1007/s40820-025-01900-3
Bin Zhang
Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, People’s Republic of China
Chuanyun Hao
Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, People’s Republic of China
Shoufeng Zhang
School of Electrical Engineering, Guangxi University of Science and Technology, Liuzhou 545006, People’s Republic of China
Bin Xue
Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, People’s Republic of China
Xiangfan Xie
Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, People’s Republic of China
Shengqiao Zeng
Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, People’s Republic of China
Bin Yang
Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, People’s Republic of China
Fang Xu
Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, People’s Republic of China
Hui Li
Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, People’s Republic of China
Xin’an Zhang
Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, People’s Republic of China
Zhang Qu
Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, People’s Republic of China
Kai‑Hang Ye
Institute for Sustainable Transformation School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou 510006, People’s Republic of China
Guangda Niu
Research Institute of Huazhong University of Science and Technology in Shenzhen, Shenzhen 518052, People’s Republic of China
Wallace C. H. Choy
Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Pokfulam, Hong Kong SAR, People’s Republic of China
Kezhou Fan
Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, People’s Republic of China
Kam Sing Wong
Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, People’s Republic of China
Lei Yan
Engineering and Research Center for Integrated New Energy Photovoltaics & Energy Storage Systems of Hunan Province and School of Electrical Engineering, University of South China, Hengyang 421001, People’s Republic of China
Xingzhu Wang
Engineering and Research Center for Integrated New Energy Photovoltaics & Energy Storage Systems of Hunan Province and School of Electrical Engineering, University of South China, Hengyang 421001, People’s Republic of China
Shuang Xiao
Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, People’s Republic of China
Cangtao Zhou
Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology (iLaT) and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, People’s Republic of China

Corresponding Author: Xingzhu Wang

2022000041@usc.edu.cn

Nano-Micro Letters, Vol. 18 (2026), Article Number: 89

Abstract

Halide perovskites have emerged as promising materials for X-ray detection with exceptional properties and reasonable costs. Among them, heterostructures between 3D perovskites and low-dimensional perovskites attract intensive studies of their advantages due to low-level ion migration and decent stability. However, there is still a lack of methods to precisely construct heterostructures and a fundamental understanding of their structure-dependent optoelectronic properties. Herein, a gas-phase method was developed to grow 2D perovskites directly on 3D perovskites with nanoscale accuracy. In addition, the larger steric hindrance of organic layers of 2D perovskites was proved to enable slower ion migration, which resulted in reduced trap states and better stability. Based on MAPbBr3 single crystals with the (PA)2PbBr4 capping layer, the X-ray detector achieved a sensitivity of 22,245 μC Gyair−1 cm−2, a response speed of 240 μs, and a dark current drift of 1.17 × 10–4 nA cm−1 s−1 V−1, which were among the highest reported for state-of-the-art perovskite-based X-ray detectors. This study presents a precise synthesis method to construct perovskite-based heterostructures. It also brings an in-depth understanding of the relationship between lattice structures and properties, which are beneficial for advancing high-performance and cost-effective X-ray detectors.


Highlights:
1 A gas-phase method has been developed, which can directly grow two-dimensional perovskite on three-dimensional perovskite with nanoscale precision.
2 The steric hindrance of the organic layer within 2D perovskites influences the ion migration in lattice. Larger steric hindrance enables slower ion movement.
3 The constructed 2D/3D heterojunction device showed ultra-high sensitivity, ultra-fast response speed, and ultra-low dark current.

Keywords

Halide perovskite Ion migration Interface Heterostructure X-ray detection
Zhang, Bin, Chuanyun Hao, Shoufeng Zhang, Bin Xue, Xiangfan Xie, Shengqiao Zeng, Bin Yang, Fang Xu, Hui Li, Xin’an Zhang, Zhang Qu, Kai‑Hang Ye, Guangda Niu, Wallace C. H. Choy, Kezhou Fan, Kam Sing Wong, Lei Yan, Xingzhu Wang, Shuang Xiao, and Cangtao Zhou. 2025. “Gas-Phase Construction of Compact Capping Layers for High-Performance Halide Perovskite X-Ray Detectors”. Nano-Micro Letters 18 (December):89. https://doi.org/10.1007/s40820-025-01900-3.
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