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Vol. 10 No. 4 (2018)

Controllable Vapor Growth of Large-Area Aligned CdSxSe1−x Nanowires for Visible Range Integratable Photodetectors

https://doi.org/10.1007/s40820-018-0211-7
Muhammad Shoaib
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People’s Republic of China
Xiaoxia Wang
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People’s Republic of China
Xuehong Zhang
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People’s Republic of China
Qinglin Zhang
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People’s Republic of China
Anlian Pan
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People’s Republic of China

Corresponding Author: Anlian Pan

anlian.pan@hnu.edu.cn

Nano-Micro Letters, Vol. 10 No. 4 (2018), Article Number: 58

Abstract

The controllable growth of large area band gap engineered-semiconductor nanowires (NWs) with precise orientation and position is of immense significance in the development of integrated optoelectronic devices. In this study, we have achieved large area in-plane-aligned CdSxSe1−x nanowires via chemical vapor deposition method. The orientation and position of the alloyed CdSxSe1−x NWs could be controlled well by the graphoepitaxial effect and the patterns of Au catalyst. Microstructure characterizations of these as-grown samples reveal that the aligned CdSxSe1−x NWs possess smooth surface and uniform diameter. The aligned CdSxSe1−x NWs have strong photoluminescence and high-quality optical waveguide emission covering almost the entire visible wavelength range. Furthermore, photodetectors were constructed based on individual alloyed CdSxSe1−x NWs. These devices exhibit high performance and fast response speed with photoresponsivity ~ 670 A W−1 and photoresponse time ~ 76 ms. Present work provides a straightforward way to realize in-plane aligned bandgap engineering in semiconductor NWs for the development of large area NW arrays, which exhibit promising applications in future optoelectronic integrated circuits.


Highlights:


1 The growth of tunable composition-directional CdSxSe1−x nanowires was successfully realized by controllable chemical vapor deposition using graphoepitaxial effect.
2 Photodetectors based on CdSxSe1−x nanowires with different compositions covering the visible spectral range on faceted M-plane substrate were constructed.
3 The as-grown nanowires not only exhibited superior optical properties such as strong emission and perfectly aligned waveguide but also demonstrated high-performance photodetection as compared to previous single crystalline CdSSe photodetectors.

Keywords

Graphoepitaxial effect Bandgap engineering CdSxSe1−x nanowires Optical waveguide Photodetectors
Shoaib, Muhammad, Xiaoxia Wang, Xuehong Zhang, Qinglin Zhang, and Anlian Pan. 2018. “Controllable Vapor Growth of Large-Area Aligned CdSxSe1−x Nanowires for Visible Range Integratable Photodetectors”. Nano-Micro Letters 10 (4):58. https://doi.org/10.1007/s40820-018-0211-7.
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