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Vol. 10 No. 4 (2018)

Controllable Vapor Growth of Large-Area Aligned CdSxSe1−x Nanowires for Visible Range Integratable Photodetectors

https://doi.org/10.1007/s40820-018-0211-7
Muhammad Shoaib
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People’s Republic of China
Xiaoxia Wang
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People’s Republic of China
Xuehong Zhang
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People’s Republic of China
Qinglin Zhang
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People’s Republic of China
Anlian Pan
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People’s Republic of China

Corresponding Author: Anlian Pan

anlian.pan@hnu.edu.cn

Nano-Micro Letters, Vol. 10 No. 4 (2018), Article Number: 58

Abstract

The controllable growth of large area band gap engineered-semiconductor nanowires (NWs) with precise orientation and position is of immense significance in the development of integrated optoelectronic devices. In this study, we have achieved large area in-plane-aligned CdSxSe1−x nanowires via chemical vapor deposition method. The orientation and position of the alloyed CdSxSe1−x NWs could be controlled well by the graphoepitaxial effect and the patterns of Au catalyst. Microstructure characterizations of these as-grown samples reveal that the aligned CdSxSe1−x NWs possess smooth surface and uniform diameter. The aligned CdSxSe1−x NWs have strong photoluminescence and high-quality optical waveguide emission covering almost the entire visible wavelength range. Furthermore, photodetectors were constructed based on individual alloyed CdSxSe1−x NWs. These devices exhibit high performance and fast response speed with photoresponsivity ~ 670 A W−1 and photoresponse time ~ 76 ms. Present work provides a straightforward way to realize in-plane aligned bandgap engineering in semiconductor NWs for the development of large area NW arrays, which exhibit promising applications in future optoelectronic integrated circuits.


Highlights:


1 The growth of tunable composition-directional CdSxSe1−x nanowires was successfully realized by controllable chemical vapor deposition using graphoepitaxial effect.
2 Photodetectors based on CdSxSe1−x nanowires with different compositions covering the visible spectral range on faceted M-plane substrate were constructed.
3 The as-grown nanowires not only exhibited superior optical properties such as strong emission and perfectly aligned waveguide but also demonstrated high-performance photodetection as compared to previous single crystalline CdSSe photodetectors.

Keywords

Graphoepitaxial effect Bandgap engineering CdSxSe1−x nanowires Optical waveguide Photodetectors
Shoaib, Muhammad, Xiaoxia Wang, Xuehong Zhang, Qinglin Zhang, and Anlian Pan. 2018. “Controllable Vapor Growth of Large-Area Aligned CdSxSe1−x Nanowires for Visible Range Integratable Photodetectors”. Nano-Micro Letters 10 (4):58. https://doi.org/10.1007/s40820-018-0211-7.
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References
  1. N.P. Dasgupta, J. Sun, C. Liu, S. Brittman, S.C. Andrews, J. Lim, H. Gao, R. Yan, P. Yang, 25th anniversary article: semiconductor nanowires-synthesis, characterization, and applications. Adv. Mater. 26(14), 2137–2184 (2014). https://doi.org/10.1002/adma.201305929
  2. P. Guo, W. Hu, Q.L. Zhang, X. Zhuang, X. Zhu, H. Zhou, Z. Shan, J. Xu, A. Pan, Semiconductor alloy nanoribbon lateral heterostructures for high-performance photodetectors. Adv. Mater. 26(18), 2844–2849 (2014). https://doi.org/10.1002/adma.201304967
  3. V.J. Logeeswaran, J. Oh, A.P. Nayak, A.M. Katzenmeyer, K.H. Gilchrist et al., A perspective on nanowire photodetectors: Current status, future challenges, and opportunities. IEEE J. Sel. Top. Quantum Electron. 17(4), 1002–1032 (2011). https://doi.org/10.1109/JSTQE.2010.2093508
  4. A. Pan, P.L. Nichols, C.Z. Ning, Semiconductor alloy nanowires and nanobelts with tunable optical properties. IEEE J. Sel. Top. Quantum Electron. 17(4), 808–818 (2011). https://doi.org/10.1109/JSTQE.2010.2064159
  5. A. Pan, W. Zhou, E.S.P. Leong, R. Liu, A.H. Chin, B. Zou, C.Z. Ning, Continuous alloy-composition spatial grading and superbroad wavelength-tunable nanowire lasers on a single chip. Nano Lett. 9(2), 784–788 (2009). https://doi.org/10.1021/nl803456k
  6. H. Tan, C. Fan, L. Ma, X. Zhang, P. Fan et al., Single-crystalline ingaas nanowires for room-temperature high-performance near-infrared photodetectors. Nano-Micro Lett. 8(1), 29–35 (2016). https://doi.org/10.1007/s40820-015-0058-0
  7. M. Liu, Z. Wu, W.M. Lau, J. Yang, Recent advances in directed assembly of nanowires or nanotubes. Nano-Micro Lett. 4(3), 142–153 (2012). https://doi.org/10.1007/bf03353705
  8. X.-X. Yu, H. Yin, H.-X. Li, W. Zhang, H. Zhao, C. Li, M.-Q. Zhu, Piezo-phototronic effect modulated self-powered UV/visible/near-infrared photodetectors based on CdS:P3Ht microwires. Nano Energy 34, 155–163 (2017). https://doi.org/10.1016/j.nanoen.2017.02.033
  9. H. Yin, Q. Li, M. Cao, W. Zhang, H. Zhao, C. Li, K. Huo, M. Zhu, Nanosized-bismuth-embedded 1D carbon nanofibers as high-performance anodes for lithium-ion and sodium-ion batteries. Nano Res. 10(6), 2156–2167 (2017). https://doi.org/10.1007/s12274-016-1408-z
  10. H. Yin, M.-L. Cao, X.-X. Yu, H. Zhao, Y. Shen, C. Li, M.-Q. Zhu, Self-standing Bi2O3 nanoparticles/carbon nanofiber hybrid films as a binder-free anode for flexible sodium-ion batteries. Mater. Chem. Front. 1(8), 1615–1621 (2017). https://doi.org/10.1039/C7QM00128B
  11. C.J. Barrelet, Y. Wu, D.C. Bell, C.M. Lieber, Synthesis of cds and zns nanowires using single-source molecular precursors. J. Am. Chem. Soc. 125(38), 11498–11499 (2003). https://doi.org/10.1021/ja036990g
  12. K. Deng, L. Li, Cds nanoscale photodetectors. Adv. Mater. 26(17), 2619–2635 (2014). https://doi.org/10.1002/adma.201304621
  13. X.S. Fang, Y. Bando, M.Y. Liao, U.K. Gautam, C.Y. Zhi et al., Single-crystalline zns nanobelts as ultraviolet-light sensors. Adv. Mater. 21(20), 2034–3039 (2009). https://doi.org/10.1002/adma.200802441
  14. A. Fasoli, A. Colli, F. Martelli, S. Pisana, P.H. Tan, A.C. Ferrari, Photoluminescence of cdse nanowires grown with and without metal catalyst. Nano Res. 4(4), 343–359 (2011). https://doi.org/10.1007/s12274-010-0089-2
  15. H. Frenzel, A. Lajn, H. von Wenckstern, M. Lorenz, F. Schein, Z. Zhang, M. Grundmann, Recent progress on ZnO-based metal-semiconductor field-effect transistors and their application in transparent integrated circuits. Adv. Mater. 22(47), 5332–5349 (2010). https://doi.org/10.1002/adma.201001375
  16. L. Li, Y. Zhang, Z. Chew, A Cu/ZnO nanowire/Cu resistive switching device. Nano-Micro Lett. 5(3), 159–162 (2013). https://doi.org/10.1007/BF03353745
  17. X.-X. Yu, H. Yin, H.-X. Li, H. Zhao, C. Li, M.-Q. Zhu, A novel high-performance self-powered UV-Vis-NIR photodetector based on a CdS nanorod array/reduced graphene oxide film heterojunction and its piezo-phototronic regulation. J. Mater. Chem. C 6(3), 630–636 (2018). https://doi.org/10.1039/C7TC05224C
  18. X. Wu, Y. Lei, Y. Zheng, F. Qu, Controlled growth and cathodoluminescence property of zns nanobelts with large aspect ratio. Nano-Micro Lett. 2(4), 272–276 (2010). https://doi.org/10.1007/BF03353854
  19. C.-Z. Ning, L. Dou, P. Yang, Bandgap engineering in semiconductor alloy nanomaterials with widely tunable compositions. Nat. Rev. Mater. 2, 17070 (2017). https://doi.org/10.1038/natrevmats.2017.70
  20. Y.J. Hsu, S.Y. Lu, Y.F. Lin, One-step preparation of coaxial CdS–ZnS and Cd1−xZnxS–ZnS nanowires. Adv. Funct. Mater. 15(8), 1350–1357 (2005). https://doi.org/10.1002/adfm.200400563
  21. Y. Liang, H. Xu, S. Hark, Epitaxial growth and composition-dependent optical properties of vertically aligned ZnS1−xSex alloy nanowire arrays. Cryst. Growth Des. 10(10), 4206–4210 (2010). https://doi.org/10.1021/cg9014493
  22. J. Lu, H. Liu, M. Zheng, H. Zhang, S.X. Lim, E.S. Tok, C.H. Sow, Laser modified zno/cdsse core-shell nanowire arrays for micro-steganography and improved photoconduction. Sci. Rep. 4, 6350 (2014). https://doi.org/10.1038/srep06350
  23. O. Maksimov, N. Samarth, H. Lu, M. Muñoz, M.C. Tamargo, Efficient free exciton emission at room temperature in Zn0.5Cd0.5Se/MgxZnyCd1−x−ySe quantum wells. Solid State Commun. 132(1), 1–5 (2004). https://doi.org/10.1016/j.ssc.2004.07.022
  24. P.L. Nichols, Z. Liu, L. Yin, S. Turkdogan, F. Fan, C.Z. Ning, CdxPb1−xS alloy nanowires and heterostructures with simultaneous emission in mid-infrared and visible wavelengths. Nano Lett. 15(2), 909–916 (2015). https://doi.org/10.1021/nl503640x
  25. C. Yiyan, W. Zhiming, N. Jianchao, A.B. Waseem, L. Jing, L. Shuping, H. Kai, K. Junyong, Type-ii core/shell nanowire heterostructures and their photovol-taic applications. Nano-Micro Lett. 4(3), 135–141 (2012). https://doi.org/10.3786/nml.v4i3.p135-141
  26. G.Z. Dai, R.B. Liu, Q. Wan, Q.L. Zhang, A.L. Pan, B.S. Zou, Color-tunable periodic spatial emission of alloyed CdS1−xSex/Sn: Cds1−xSex superlattice microwires. Opt. Mater. Express 1(7), 1185–1191 (2011). https://doi.org/10.1364/OME.1.001185
  27. J.-P. Kim, J.A. Christians, H. Choi, S. Krishnamurthy, P.V. Kamat, Cdses nanowires: compositionally controlled band gap and exciton dynamics. J. Phys. Chem. Lett. 5(7), 1103–1109 (2014). https://doi.org/10.1021/jz500280g
  28. L. Li, H. Lu, Z. Yang, L. Tong, Y. Bando, D. Golberg, Bandgap-graded CdsxSe1−x nanowires for high-performance field-effect transistors and solar cells. Adv. Mater. 25(8), 1109–1113 (2013). https://doi.org/10.1002/adma.201204434
  29. A. Pan, R. Liu, F. Wang, S. Xie, B. Zou, M. Zacharias, Z.L. Wang, High-quality alloyed CdsxSe1−x whiskers as waveguides with tunable stimulated emission. J. Phys. Chem. B 110(45), 22313–22317 (2006). https://doi.org/10.1021/jp064664s
  30. A. Pan, H. Yang, R. Liu, R. Yu, B. Zou, Z. Wang, Color-tunable photoluminescence of alloyed CdsxSe1−x nanobelts. J. Am. Chem. Soc. 127(45), 15692–15693 (2005). https://doi.org/10.1021/ja056116i
  31. J. Pan, M.I.B. Utama, Q. Zhang, X. Liu, B. Peng, L.M. Wong, T.C. Sum, S. Wang, Q. Xiong, Composition-tunable vertically aligned CdSxSe1−x nanowire arrays via van der waals epitaxy: investigation of optical properties and photocatalytic behavior. Adv. Mater. 24(30), 4151–4156 (2012). https://doi.org/10.1002/adma.201104996
  32. P. Guo, X. Zhuang, J. Xu, Q. Zhang, W. Hu et al., Low-threshold nanowire laser based on composition-symmetric semiconductor nanowires. Nano Lett. 13(3), 1251–1256 (2013). https://doi.org/10.1021/nl3047893
  33. J. Xu, X. Zhuang, P. Guo, W. Huang, W. Hu et al., Asymmetric light propagation in composition-graded semiconductor nanowires. Sci. Rep. 2, 820 (2012). https://doi.org/10.1038/srep00820
  34. F. Gu, Z. Yang, H. Yu, J. Xu, P. Wang, L. Tong, A. Pan, Spatial bandgap engineering along single alloy nanowires. J. Am. Chem. Soc. 133(7), 2037–2039 (2011). https://doi.org/10.1021/ja110092a
  35. J. Xu, X. Zhuang, P. Guo, Q. Zhang, W. Huang et al., Wavelength-converted/selective waveguiding based on composition-graded semiconductor nanowires. Nano Lett. 12(9), 5003–5007 (2012). https://doi.org/10.1021/nl302693c
  36. P. Guo, J. Xu, K. Gong, X. Shen, Y. Lu et al., On-nanowire axial heterojunction design for high-performance photodetectors. ACS Nano 10(9), 8474–8481 (2016). https://doi.org/10.1021/acsnano.6b03458
  37. D. Tsivion, M. Schvartzman, R. Popovitz-Biro, P. von Huth, E. Joselevich, Guided growth of millimeter-long horizontal nanowires with controlled orientations. Science 333(6045), 1003–1007 (2011). https://doi.org/10.1126/science.1208455
  38. X. Wang, N. Aroonyadet, Y. Zhang, M. Mecklenburg, X. Fang, H. Chen, E. Goo, C. Zhou, Aligned epitaxial SnO2 nanowires on sapphire: growth and device applications. Nano Lett. 14(6), 3014–3022 (2014). https://doi.org/10.1021/nl404289z
  39. G. Reut, E. Oksenberg, R. Popovitz-Biro, K. Rechav, E. Joselevich, Guided growth of horizontal p-type ZnTe nanowires. J. Phys. Chem. C 120(30), 17087–17100 (2016). https://doi.org/10.1021/acs.jpcc.6b05191
  40. J. Xu, E. Oksenberg, R. Popovitz-Biro, K. Rechav, E. Joselevich, Bottom-up tri-gate transistors and submicrosecond photodetectors from guided CdS nanowalls. J. Am. Chem. Soc. 139(44), 15958–15967 (2017). https://doi.org/10.1021/jacs.7b09423
  41. E. Shalev, E. Oksenberg, K. Rechav, R. Popovitz-Biro, E. Joselevich, Guided cdse nanowires parallelly integrated into fast visible-range photodetectors. ACS Nano 11(1), 213–220 (2017). https://doi.org/10.1021/acsnano.6b04469
  42. D. Tsivion, M. Schvartzman, R. Popovitz-Biro, E. Joselevich, Guided growth of horizontal zno nanowires with controlled orientations on flat and faceted sapphire surfaces. ACS Nano 6(7), 6433–6445 (2012). https://doi.org/10.1021/nn3020695
  43. E. Oksenberg, R. Popovitz-Biro, K. Rechav, E. Joselevich, Guided growth of horizontal ZnSe nanowires and their integration into high-performance blue–UV photodetectors. Adv. Mater. 27(27), 3999–4005 (2015). https://doi.org/10.1002/adma.201500736
  44. R. Gabai, A. Ismach, E. Joselevich, Nanofacet lithography: A new bottom-up approach to nanopatterning and nanofabrication by soft replication of spontaneously faceted crystal surfaces. Adv. Mater. 19(10), 1325–1330 (2007). https://doi.org/10.1002/adma.200601625
  45. K.A. Bal, A. Savitri, P.S. Yadav, K. Sudhir, Ab initio calculation of electronic properties of Ga1−xAlxN alloys. J. Phys.: Condens. Mater. 9(8), 1763 (1997). https://doi.org/10.1088/0953-8984/9/8/008
  46. A. Zunger, J.E. Jaffe, Structural origin of optical bowing in semiconductor alloys. Phys. Rev. Lett. 51(8), 662–665 (1983). https://doi.org/10.1103/PhysRevLett.51.662
  47. J.A. Van Vechten, T.K. Bergstresser, Electronic structures of semiconductor alloys. Phys. Rev. B 1(8), 3351–3358 (1970). https://doi.org/10.1103/PhysRevB.1.3351
  48. A. Pan, X. Wang, P. He, Q. Zhang, Q. Wan, M. Zacharias, X. Zhu, B. Zou, Color-changeable optical transport through se-doped cds 1D nanostructures. Nano Lett. 7(10), 2970–2975 (2007). https://doi.org/10.1021/nl0710295
  49. J.S. Jie, W.J. Zhang, Y. Jiang, X.M. Meng, Y.Q. Li, S.T. Lee, Photoconductive characteristics of single-crystal Cds nanoribbons. Nano Lett. 6(9), 1887–1892 (2006). https://doi.org/10.1021/nl060867g
  50. P. Ren, W. Hu, Q. Zhang, X. Zhu, X. Zhuang et al., Band-selective infrared photodetectors with complete-composition-range InAs(x)P(1−x) alloy nanowires. Adv. Mater. 26(44), 7444–7449 (2014). https://doi.org/10.1002/adma.201402945
  51. Y. Jiang, W.J. Zhang, J.S. Jie, X.M. Meng, X. Fan, S.T. Lee, Photoresponse properties of CdSe single-nanoribbon photodetectors. Adv. Funct. Mater. 17(11), 1795–1800 (2007). https://doi.org/10.1002/adfm.200600351
  52. M. Shoaib, X. Zhang, X. Wang, H. Zhou, T. Xu et al., Directional growth of ultralong CsPbBr 3 perovskite nanowires for high-performance photodetectors. J. Am. Chem. Soc. 139(44), 15592–15595 (2017). https://doi.org/10.1021/jacs.7b08818
  53. M.H. Cohen, H. Fritzsche, S.R. Ovshinsky, Simple band model for amorphous semiconducting alloys. Phys. Rev. Lett. 22(20), 1065–1068 (1969). https://doi.org/10.1103/PhysRevLett.22.1065
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