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Vol. 8 No. 1 (2016)

Single-Crystalline InGaAs Nanowires for Room-Temperature High-Performance Near-Infrared Photodetectors

https://doi.org/10.1007/s40820-015-0058-0
Huang Tan
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082, People’s Republic of China 123
Chao Fan
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082, People’s Republic of China
Liang Ma
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082, People’s Republic of China
Xuehong Zhang
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082, People’s Republic of China
Peng Fan
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082, People’s Republic of China
Yankun Yang
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082, People’s Republic of China
Wei Hu
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082, People’s Republic of China
Hong Zhou
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082, People’s Republic of China
Xiujuan Zhuang
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082, People’s Republic of China
Xiaoli Zhu
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082, People’s Republic of China
Anlian Pan
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082, People’s Republic of China

Corresponding Author: Anlian Pan

anlian.pan@hnu.edu.cn

Nano-Micro Letters, Vol. 8 No. 1 (2016), Article Number: 29-35

Abstract

InGaAs is an important bandgap-variable ternary semiconductor which has wide applications in electronics and optoelectronics. In this work, single-crystal InGaAs nanowires were synthesized by a chemical vapor deposition method. Photoluminescence measurements indicate the InGaAs nanowires have strong light emission in near-infrared region. For the first time, photodetector based on as-grown InGaAs nanowires was also constructed. It shows good light response over a broad spectral range in infrared region with responsivity of 6.5 × 103 A W−1 and external quantum efficiency of 5.04 × 105 %. This photodetector may have potential applications in integrated optoelectronic devices and systems.

Keywords

InGaAs Nanowire Near-infrared Photodetector
Tan, Huang, Chao Fan, Liang Ma, Xuehong Zhang, Peng Fan, Yankun Yang, Wei Hu, Hong Zhou, Xiujuan Zhuang, Xiaoli Zhu, and Anlian Pan. 2015. “Single-Crystalline InGaAs Nanowires for Room-Temperature High-Performance Near-Infrared Photodetectors”. Nano-Micro Letters 8 (1):29-35. https://doi.org/10.1007/s40820-015-0058-0.
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