Issue

Vol. 7 No. 3 (2015)

Advances in MoS2-Based Field Effect Transistors (FETs)

https://doi.org/10.1007/s40820-015-0034-8
Xin Tong
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People’s Republic of China
Eric Ashalley
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People’s Republic of China
Feng Lin
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People’s Republic of China
Handong Li
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People’s Republic of China
Zhiming M. Wang
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People’s Republic of China

Corresponding Author: Zhiming M. Wang

zhmwang@gmail.com

Nano-Micro Letters, Vol. 7 No. 3 (2015), Article Number: 203-218

Abstract

This paper reviews the original achievements and advances regarding the field effect transistor (FET) fabricated from one of the most studied transition metal dichalcogenides: two-dimensional MoS2. Not like graphene, which is highlighted by a gapless Dirac cone band structure, Monolayer MoS2 is featured with a 1.9 eV gapped direct energy band thus facilitates convenient electronic and/or optoelectronic modulation of its physical properties in FET structure. Indeed, many MoS2 devices based on FET architecture such as phototransistors, memory devices, and sensors have been studied and extraordinary properties such as excellent mobility, ON/OFF ratio, and sensitivity of these devices have been exhibited. However, further developments in FET device applications depend a lot on if novel physics would be involved in them. In this review, an overview on advances and developments in the MoS2-based FETs are presented. Engineering of MoS2-based FETs will be discussed in details for understanding contact physics, formation of gate dielectric, and doping strategies. Also reported are demonstrations of device behaviors such as low-frequency noise and photoresponse in MoS2-based FETs, which is crucial for developing electronic and optoelectronic devices.

Keywords

MoS2 FETs engineering Low-frequency noise Optical properties MoS2 sensors MoS2 memory devices
Tong, Xin, Eric Ashalley, Feng Lin, Handong Li, and Zhiming M. Wang. 2015. “Advances in MoS2-Based Field Effect Transistors (FETs)”. Nano-Micro Letters 7 (3):203-18. https://doi.org/10.1007/s40820-015-0034-8.
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