Issue

Vol. 11 (2019)

Recent Progress in the Fabrication, Properties, and Devices of Heterostructures Based on 2D Materials

https://doi.org/10.1007/s40820-019-0245-5
Yanping Liu
School of Physics and Electronics, Hunan Key Laboratory for Super‑Microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha 410083, Hunan, People’s Republic of China
Siyu Zhang
School of Physics and Electronics, Hunan Key Laboratory for Super‑Microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha 410083, Hunan, People’s Republic of China
Jun He
School of Physics and Electronics, Hunan Key Laboratory for Super‑Microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha 410083, Hunan, People’s Republic of China
Zhiming M. Wang
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People’s Republic of China
Zongwen Liu
School of Chemical and Biomolecular Engineering, The University of Sydney, Sydney, NSW 2006, Australia

Corresponding Author: Zongwen Liu

zongwen.liu@sydney.edu.au

Nano-Micro Letters, Vol. 11 (2019), Article Number: 13

Abstract

With a large number of researches being conducted on two-dimensional (2D) materials, their unique properties in optics, electrics, mechanics, and magnetics have attracted increasing attention. Accordingly, the idea of combining distinct functional 2D materials into heterostructures naturally emerged that provides unprecedented platforms for exploring new physics that are not accessible in a single 2D material or 3D heterostructures. Along with the rapid development of controllable, scalable, and programmed synthesis techniques of high-quality 2D heterostructures, various heterostructure devices with extraordinary performance have been designed and fabricated, including tunneling transistors, photodetectors, and spintronic devices. In this review, we present a summary of the latest progresses in fabrications, properties, and applications of different types of 2D heterostructures, followed by the discussions on present challenges and perspectives of further investigations.


Highlights:


1 The controllable fabrication methods, the unique properties, and relative applications of 2D heterostructures were summarized.
2 The generation and detection of interlayer excitons in 2D heterostructures with type II band alignment indicate a longer lifetime and larger binding energy than intralayer excitons.
3 The advances in magnetic tunneling junctions based on 2D heterostructures can be applied in spintronic devices to realize spin filtering.

Keywords

Two-dimensional (2D) materials 2D heterostructures Charge and magnetotransport Electronic and optoelectronic devices
Liu, Yanping, Siyu Zhang, Jun He, Zhiming M. Wang, and Zongwen Liu. 2019. “Recent Progress in the Fabrication, Properties, and Devices of Heterostructures Based on 2D Materials”. Nano-Micro Letters 11 (February):13. https://doi.org/10.1007/s40820-019-0245-5.
Download Citation
Endnote/Zotero/Mendeley (RIS)
BibTeX
References
  1. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, A.A. Firsov, Electric field effect in atomically thin carbon films. Science 306(5696), 666–669 (2004). https://doi.org/10.1126/science.1102896
  2. M. Osada, T. Sasaki, Two-dimensional dielectric nanosheets: novel nanoelectronics from nanocrystal building blocks. Adv. Mater. 24(2), 210–228 (2012). https://doi.org/10.1002/adma.201103241
  3. L.M. Malard, J. Nilsson, D.C. Elias, J.C. Brant, F. Plentz et al., Probing the electronic structure of bilayer graphene by Raman scattering. Phys. Rev. B 76(20), 201401 (2007). https://doi.org/10.1103/PhysRevB.76.201401
  4. V. Tran, R. Soklaski, Y.F. Liang, L. Yang, Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus. Phys. Rev. B 89(23), 235319 (2014). https://doi.org/10.1103/PhysRevB.89.235319
  5. K.F. Mak, C. Lee, J. Hone, J. Shan, T.F. Heinz, Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105(13), 136805 (2010). https://doi.org/10.1103/PhysRevLett.105.136805
  6. L. Xie, M.Z. Liao, S.P. Wang, H. Yu, L.J. Du et al., Graphene-contacted ultrashort channel monolayer MoS2 transistors. Adv. Mater. 29(37), 1702522 (2017). https://doi.org/10.1002/adma.201702522
  7. Y.P. Liu, W.S. Lew, S. Goolaup, Z.X. Shen, L. Sun, T.J. Zhou, S.K. Wong, Observation of the semiconductor-metal transition behavior in monolayer graphene. Carbon 50(6), 2273–2279 (2012). https://doi.org/10.1016/j.carbon.2012.01.046
  8. A. Allain, J.H. Kang, K. Banerjee, A. Kis, Electrical contacts to two-dimensional semiconductors. Nat. Mater. 14(12), 1195–1205 (2015). https://doi.org/10.1038/nmat4452
  9. P.R.Y. Gangavarapu, P.C. Lokesh, K.N. Bhat, A.K. Naik, Towards barrier free contacts to n-type CNTFETS using graphene electrodes, in 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC 2016). https://doi.org/10.1109/nmdc.2016.7777064
  10. J. Du, C.X. Xia, W.Q. Xiong, X. Zhao, T.X. Wang, Y. Jia, Tuning the electronic structures and magnetism of two-dimensional porous C2N via transition metal embedding. Phys. Chem. Chem. Phys. 18(32), 22678–22686 (2016). https://doi.org/10.1039/C6CP03210A
  11. Y.P. Liu, S. Goolaup, W.S. Lew, I. Purnama, M.C. Sekhar, T.J. Zhou, S.K. Wong, Excitonic bandgap dependence on stacking configuration in four layer graphene. Appl. Phys. Lett. 103(16), 163108 (2013). https://doi.org/10.1063/1.4825263
  12. C.R. Dean, A.F. Young, I. Meric, C. Lee, L. Wang et al., Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 5(10), 722–726 (2010). https://doi.org/10.1038/nnano.2010.172
  13. W.J. Jie, Z.B. Yang, G.X. Bai, J.H. Hao, Luminescence in 2D materials and van der waals heterostructures. Adv. Opt. Mater. 6(10), 1701296 (2018). https://doi.org/10.1002/adom.201701296
  14. K.S. Novoselov, A. Mishchenko, A. Carvalho, A.H.C. Neto, 2D materials and van der Waals heterostructures. Science 353(6298), 9439 (2016). https://doi.org/10.1126/science.aac9439
  15. O.L. Sanchez, D. Ovchinnikov, S. Misra, A. Allain, A. Kis, Valley polarization by spin injection in a light-emitting van der waals heterojunction. Nano Lett. 16(9), 5792–5797 (2016). https://doi.org/10.1021/acs.nanolett.6b02527
  16. C.L. Tan, H. Zhang, Epitaxial growth of hetero-nanostructures based on ultrathin two-dimensional nanosheets. J. Am. Chem. Soc. 137(38), 12162–12174 (2015). https://doi.org/10.1021/jacs.5b03590
  17. H.Y. Yu, Y. Wang, Q.J. Tong, X.D. Xu, W. Yao, Anomalous light cones and valley optical selection rules of interlayer excitons in twisted heterobilayers. Phys. Rev. Lett. 115(18), 187002 (2015). https://doi.org/10.1103/PhysRevLett.115.187002
  18. F. Haque, T. Daeneke, K. Kalantar-zadeh, J. Ou, Two-dimensional transition metal oxide and chalcogenide-based photocatalysts. Nano-Micro Lett. 10, 23 (2018). https://doi.org/10.1007/s40820-017-0176-y
  19. X. Zhou, X.Z. Hu, J. Yu, S.Y. Liu, Z.W. Shu et al., 2D layered material-based van der waals heterostructures for optoelectronics. Adv. Funct. Mater. 28(14), 1706587 (2018). https://doi.org/10.1002/adfm.201706587
  20. J.A. Leon, N.C. Mamani, A. Rahim, L.E. Gomez, M.A.P. Silva, G.M. Gusev, Transferring few-layer graphene sheets on hexagonal boron nitride substrates for fabrication of graphene devices. Graphene 25–35, 48096 (2014). https://doi.org/10.4236/graphene.2014.33005
  21. A. Castellanos-Gomez, M. Buscema, R. Molenaar, V. Singh, L. Janssen, H.S.J. van der Zant, G.A. Steele, Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping. 2D Mater. 1(1), 011002 (2014)
  22. P. Pedrinazzi, J.M. Caridad, D.M.A. Mackenzie, F. Pizzocchero, L. Gammelgaard et al., High-quality graphene flakes exfoliated on a flat hydrophobic polymer. Appl. Phys. Lett. 112(3), 033101 (2018). https://doi.org/10.1063/1.5009168
  23. P.J. Zomer, S.P. Dash, N. Tombros, B.J. van Wees, A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride. Appl. Phys. Lett. 99(23), 232104 (2011). https://doi.org/10.1063/1.3665405
  24. J.I.J. Wang, Y.F. Yang, Y.A. Chen, K. Watanabe, T. Taniguchi, H.O.H. Churchill, P. Jarillo-Herrero, Electronic transport of encapsulated graphene and WSe2 devices fabricated by pick-up of prepatterned hBN. Nano Lett. 15(3), 1898–1903 (2015). https://doi.org/10.1021/nl504750f
  25. R. Frisenda, E. Navarro-Moratalla, P. Gant, D.P. De Lara, P. Jarillo-Herrero, R.V. Gorbachev, A. Castellanos-Gomez, Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials. Chem. Soc. Rev. 47(1), 53–68 (2018). https://doi.org/10.1039/c7cs00556c
  26. M.A. Meitl, Z.T. Zhu, V. Kumar, K.J. Lee, X. Feng et al., Transfer printing by kinetic control of adhesion to an elastomeric stamp. Nat. Mater. 5(1), 33–38 (2006). https://doi.org/10.1038/nmat1532
  27. Y.J. Gong, J.H. Lin, X.L. Wang, G. Shi, S.D. Lei et al., Vertical and in-plane heterostructures from WS2/MoS2 monolayers. Nat. Mater. 13(12), 1135–1142 (2014). https://doi.org/10.1038/Nmat4091
  28. X.F. Li, M.W. Lin, J.H. Lin, B. Huang, A.A. Puretzky et al., Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy. Sci. Adv. 2(4), 1501882 (2016). https://doi.org/10.1126/sciadv.1501882
  29. L. Fu, Y.Y. Sun, N. Wu, R.G. Mendes, L.F. Chen et al., Direct growth of MoS2/h-BN heterostructures via a sulfide-resistant alloy. ACS Nano 10(2), 2063–2070 (2016). https://doi.org/10.1021/acsnano.5b06254
  30. B.Y. Zheng, C. Ma, D. Li, J.Y. Lan, Z. Zhang et al., Band alignment engineering in two-dimensional lateral heterostructures. J. Am. Chem. Soc. 140(36), 11193–11197 (2018). https://doi.org/10.1021/jacs.8b07401
  31. P.K. Sahoo, S. Memaran, Y. Xin, L. Balicas, H.R. Gutierrez, One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy. Nature 553(7686), 63–67 (2018). https://doi.org/10.1038/nature25155
  32. Z.W. Zhang, P. Chen, X.D. Duan, K.T. Zang, J. Luo, X.F. Duan, Robust epitaxial growth of two-dimensional heterostructures, multiheterostructures, and superlattices. Science 357(6353), 788–792 (2017). https://doi.org/10.1126/science.aan6814
  33. C. Gong, H.J. Zhang, W. Wang, L. Colombo, R.M. Wallace, K. Cho, Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors. Appl. Phys. Lett. 107(13), 053513 (2015). https://doi.org/10.1063/1.4932088
  34. F. Withers, O. Del Pozo-Zamudio, A. Mishchenko, A.P. Rooney, A. Gholinia et al., Light-emitting diodes by band-structure engineering in van der Waals heterostructures. Nat. Mater. 14(3), 301–306 (2015). https://doi.org/10.1038/nmat4205
  35. W.G. Xu, W.W. Liu, J.F. Schmidt, W.J. Zhao, X. Lu et al., Correlated fluorescence blinking in two-dimensional semiconductor heterostructures. Nature 541(7635), 62–67 (2017). https://doi.org/10.1038/nature20601
  36. Y. Hattori, T. Taniguchi, K. Watanabe, K. Nagashio, Determination of carrier polarity in Fowler–Nordheim tunneling and evidence of fermi level pinning at the hexagonal boron nitride/metal interface. ACS Appl. Mater. Interfaces 10(14), 11732–11738 (2018). https://doi.org/10.1021/acsami.7b18454
  37. P. Bampoulis, R. van Bremen, Q.R. Yao, B. Poelsema, H.J.W. Zandvliet, K. Sotthewes, Defect dominated charge transport and fermi level pinning in MoS2/metal contacts. ACS Appl. Mater. Interfaces 9(22), 19278–19286 (2017). https://doi.org/10.1021/acsami.7b02739
  38. T. Le Quang, V. Cherkez, K. Nogajewski, M. Potemski, M.T. Dau, M. Jamet, P. Mallet, J.Y. Veuillen, Scanning tunneling spectroscopy of van der Waals graphene/semiconductor interfaces: absence of Fermi level pinning. 2D Mater. 4(3), 035019 (2017). https://doi.org/10.1088/2053-1583/aa7b03
  39. C.R. Woods, L. Britnell, A. Eckmann, R.S. Ma, J.C. Lu, Commensurate-incommensurate transition in graphene on hexagonal boron nitride. Nat. Phys. 10(6), 451–456 (2014). https://doi.org/10.1038/Nphys2954
  40. B. Li, L. Huang, M.Z. Zhong, Y. Li, Y. Wang, J.B. Li, Z.M. Wei, Direct vapor phase growth and optoelectronic application of large band offset SnS2/MoS2 vertical bilayer heterostructures with high lattice mismatch. Adv. Electron. Mater. 2(11), 1600298 (2016). https://doi.org/10.1002/aelm.201600298
  41. K.H. Liu, L.M. Zhang, T. Cao, C.H. Jin, D.A. Qiu et al., Evolution of interlayer coupling in twisted molybdenum disulfide bilayers. Nat. Commun. 5, 4966 (2014). https://doi.org/10.1038/ncomms5966
  42. H.J. Tan, W.S. Xu, Y.W. Sheng, C.S. Lau, Y. Fan et al., Lateral graphene-contacted vertically stacked WS2/MoS2 hybrid photodetectors with large gain. Adv. Mater. 29(46), 1702917 (2017). https://doi.org/10.1002/adma.201702917
  43. F. Gong, W.J. Luo, J.L. Wang, P. Wang, H.H. Fang et al., High-sensitivity floating-gate phototransistors based on WS2 and MoS2. Adv. Funct. Mater. 26(33), 6084–6090 (2016). https://doi.org/10.1002/adfm.201601346
  44. A. Dankert, S.P. Dash, Electrical gate control of spin current in van der Waals heterostructures at room temperature. Nat. Commun. 8, 16093 (2017). https://doi.org/10.1038/ncomms16093
  45. J.L. Wang, H.H. Fang, X.D. Wang, X.S. Chen, W. Lu, W.D. Hu, Recent progress on localized field enhanced two-dimensional material photodetectors from ultraviolet-visible to infrared. Small 13(35), 1700894 (2017). https://doi.org/10.1002/smll.201700894
  46. M.Z. Bellus, F. Ceballos, H.Y. Chiu, H. Zhao, Tightly bound trions in transition metal dichalcogenide heterostructures. ACS Nano 9(6), 6459–6464 (2015). https://doi.org/10.1021/acsnano.5b02144
  47. L.B. Drissi, F.Z. Ramadan, N.B.J. Kanga, Optoelectronic properties in 2D GeC and SiC hybrids: DFT and many body effect calculations. Mater. Res. Express 5(1), 015061 (2018). https://doi.org/10.1088/2053-1591/aaa862
  48. X.P. Hong, J. Kim, S.F. Shi, Y. Zhang, C.H. Jin et al., Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures. Nat. Nanotechnol. 9(9), 682–686 (2014). https://doi.org/10.1038/Nnano.2014.167
  49. H.H. Hung, J.S. Wu, K. Sun, C.K. Chiu, Engineering of many-body Majorana states in a topological insulator/s-wave superconductor heterostructure. Sci. Rep. 7, 3499 (2017). https://doi.org/10.1038/s41598-017-02493-7
  50. P. Rivera, J.R. Schaibley, A.M. Jones, J.S. Ross, S.F. Wu et al., Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures. Nat. Commun. 6, 6242 (2015). https://doi.org/10.1038/ncomms7242
  51. M. Li, D. Esseni, G. Snider, D. Jena, H.G. Xing, Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor. J. Appl. Phys. 115(7), 074508 (2014). https://doi.org/10.1063/1.4866076
  52. X. Yan, C.S. Liu, C. Li, W.Z. Bao, S.J. Ding, D.W. Zhang, P. Zhou, Tunable SnSe2/WSe2 heterostructure tunneling field effect transistor. Small 13(34), 1701478 (2017). https://doi.org/10.1002/smll.201701478
  53. T. Yamaoka, H.E. Lim, S. Koirala, X.F. Wang, K. Shinokita et al., Efficient photocarrier transfer and effective photoluminescence enhancement in type i monolayer MoTe2/WSe2 heterostructure. Adv. Funct. Mater. 28(35), 1801021 (2018). https://doi.org/10.1002/adfm.201801021
  54. Z. Cai, M. Cao, Z.P. Jin, K.Y. Yi, X.S. Chen, D.C. Wei, Large photoelectric-gating effect of two-dimensional van-der-Waals organic/tungsten diselenide heterointerface. NPJ 2D Mater. Appl. 2, 21 (2018). https://doi.org/10.1088/2053-1591/aaa862
  55. S. Bertolazzi, D. Krasnozhon, A. Kis, Nonvolatile memory cells based on MoS2/graphene heterostructures. ACS Nano 7(4), 3246–3252 (2013). https://doi.org/10.1021/nn3059136
  56. M.S. Choi, G.H. Lee, Y.J. Yu, D.Y. Lee, S.H. Lee, P. Kim, J. Hone, W.J. Yoo, Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices. Nat. Commun. 4, 1624 (2013). https://doi.org/10.1038/ncomms2652
  57. Y. Zhang, Y.B. Yuan, J.S. Huang, Detecting 100 fW cm−2 light with trapped electron gated organic phototransistors. Adv. Mater. 29(5), 1603969 (2017). https://doi.org/10.1002/adma.201603969
  58. J.L. Wang, X.M. Zou, X.H. Xiao, L. Xu, C.L. Wang et al., Floating gate memory-based monolayer MoS2 transistor with metal nanocrystals embedded in the gate dielectrics. Small 11(2), 208–213 (2015). https://doi.org/10.1002/smll.201401872
  59. Y.P. Liu, W.S. Lew, Z.W. Liu, Observation of anomalous resistance behavior in bilayer graphene. Nanoscale Res. Lett. 12, 48 (2017). https://doi.org/10.1186/s11671-016-1792-z
  60. Y.P. Liu, Z.W. Liu, W.S. Lew, Q.J. Wang, Temperature dependence of the electrical transport properties in few-layer graphene interconnects. Nanoscale Res. Lett. 8, 335 (2013). https://doi.org/10.1186/1556-276X-8-335
  61. Q.A. Vu, Y.S. Shin, Y.R. Kim, V.L. Nguyen, W.T. Kang et al., Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio. Nat. Commun. 7, 12725 (2016). https://doi.org/10.1038/ncomms12725
  62. H.L. Chen, X.W. Wen, J. Zhang, T.M. Wu, Y.J. Gong et al., Ultrafast formation of interlayer hot excitons in atomically thin MoS2/WS2 heterostructures. Nat. Commun. 7, 12512 (2016). https://doi.org/10.1038/ncomms12512
  63. X.W. Wen, H.L. Chen, T.M. Wu, Z.H. Yu et al., Ultrafast probes of electron-hole transitions between two atomic layers. Nat. Commun. 9, 1859 (2018). https://doi.org/10.1038/s41467-018-04291-9
  64. A.T. Hanbicki, H.J. Chuang, M.R. Rosenberger, C.S. Hellberg, S.V. Sivaram, K.M. McCreary, I.I. Mazin, B.T. Jonker, Double indirect interlayer exciton in a MoSe2/WSe2 van der waals heterostructure. ACS Nano 12(5), 4719–4726 (2018). https://doi.org/10.1021/acsnano.8b01369
  65. S. Latini, K.T. Winther, T. Olsen, K.S. Thygesen, Interlayer excitons and band alignment in MoS2/hBN/WSe2 van der waals heterostructures. Nano Lett. 17(2), 938–945 (2017). https://doi.org/10.1021/acs.nanolett.6b04275
  66. J.S. Ross, P. Rivera, J. Schaibley, E. Lee-Wong, H.Y. Yu et al., Interlayer exciton optoelectronics in a 2D heterostructure p–n junction. Nano Lett. 17(2), 638–643 (2017). https://doi.org/10.1021/acs.nanolett.6b03398
  67. P. Rivera, K.L. Seyler, H.Y. Yu, J.R. Schaibley, J.Q. Yan et al., Valley-polarized exciton dynamics in a 2D semiconductor heterostructure. Science 351(6274), 688–691 (2016). https://doi.org/10.1126/science.aac7820
  68. T. Deilmann, K.S. Thygesen, Interlayer trions in the MoS2/WS2 van der Waals heterostructure. Nano Lett. 18(2), 1460–1465 (2018). https://doi.org/10.1021/acs.nanolett.7b05224
  69. Y.P. Liu, W.S. Lew, L. Sun, Enhanced weak localization effect in few-layer graphene. Phys. Chem. Chem. Phys. 13(45), 20208–20214 (2011). https://doi.org/10.1039/c1cp22250c
  70. L.Y. Ping, G. Sarjoosing, M. Chandrasekhar, L.W. Siang, W.S.J.A.N. Kai, Effect of magnetic field on the electronic transport in trilayer graphene. ACS Nano 4(12), 7087–7092 (2010). https://doi.org/10.1021/nn101296x
  71. J.S. Qi, X. Li, Q. Niu, J. Feng, Giant and tunable valley degeneracy splitting in MoTe2. Phys. Rev. B 92(12), 121403 (2015). https://doi.org/10.1103/PhysRevB.92.121403
  72. B.Z. Zhou, S.W. Ji, Z. Tian, W.J. Cheng, X.C. Wang, W.B. Mi, Proximity effect induced spin filtering and gap opening in graphene by half-metallic monolayer Cr2C ferromagnet. Carbon 132, 25–31 (2018). https://doi.org/10.1016/j.carbon.2018.02.044
  73. P. Wei, S. Lee, F. Lemaitre, L. Pinel, D. Cutaia et al., Strong interfacial exchange field in the graphene/EuS heterostructure. Nat. Mater. 15(7), 711–716 (2016). https://doi.org/10.1038/Nmat4603
  74. H.X. Yang, A. Hallal, D. Terrade, X. Waintal, S. Roche, M. Chshiev, Proximity effects induced in graphene by magnetic insulators: first-principles calculations on spin filtering and exchange-splitting gaps. Phys. Rev. Lett. 110(4), 046603 (2013). https://doi.org/10.1103/PhysRevLett.110.046603
  75. K.L. Seyler, D. Zhong, B. Huang, X.Y. Linpeng, N.P. Wilson et al., Valley manipulation by optically tuning the magnetic proximity effect in WSe2/CrI3 heterostructures. Nano Lett. 18(6), 3823–3828 (2018). https://doi.org/10.1021/acs.nanolett.8b01105
  76. B. Huang, G. Clark, E. Navarro-Moratalla, D.R. Klein, R. Cheng, Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit. Nature 546(7657), 270–273 (2017). https://doi.org/10.1038/nature22391
  77. J.U. Lee, S. Lee, J.H. Ryoo, S. Kang, T.Y. Kim et al., Ising-type magnetic ordering in atomically thin FePS3. Nano Lett. 16(12), 7433–7438 (2016). https://doi.org/10.1021/acs.nanolett.6b03052
  78. J. Du, C.X. Xia, W.Q. Xiong, T.X. Wang, Y. Jia, J.B. Li, Two-dimensional transition-metal dichalcogenides-based ferromagnetic van der Waals heterostructures. Nanoscale 9(44), 17585–17592 (2017). https://doi.org/10.1039/c7nr06473j
  79. Y.P. Liu, I. Yudhistira, M. Yang, E. Laksono, Y.Z. Luo et al., Phonon-mediated colossal magnetoresistance in graphene/black phosphorus heterostructures. Nano Lett. 18(6), 3377–3383 (2018). https://doi.org/10.1021/acs.nanolett.8b00155
  80. M. Bonilla, S. Kolekar, Y.J. Ma, H.C. Diaz, V. Kalappattil et al., Strong room-temperature ferromagnetism in VSe2 monolayers on van der Waals substrates. Nat. Nanotechnol. 13(4), 289–293 (2018). https://doi.org/10.1038/s41565-018-0063-9
  81. Z.Y. Fei, B. Huang, P. Malinowski, W.B. Wang, T.C. Song et al., Two-dimensional itinerant ferromagnetism in atomically thin Fe3GeTe2. Nat. Mater. 17(9), 778–782 (2018). https://doi.org/10.1038/s41563-018-0149-7
  82. Y. Deng, Y. Yu, Y. Song, J. Zhang, N.Z. Wang et al., Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2. Nature 563, 94–99 (2018). https://doi.org/10.1038/s41586-018-0626-9
  83. C. Si, J. Zhou, Z.M. Sun, Half-metallic ferromagnetism and surface functionalization-induced metal-insulator transition in graphene-like two-dimensional Cr2C crystals. ACS Appl. Mater. Interfaces 7(31), 17510–17515 (2015). https://doi.org/10.1021/acsami.5b05401
  84. M. Kan, J. Zhou, Q. Sun, Y. Kawazoe, P. Jena, The intrinsic ferromagnetism in a MnO2 monolayer. J. Phys. Chem. Lett. 4(20), 3382–3386 (2013). https://doi.org/10.1021/jz4017848
  85. Y. Zhang, J.M. Pang, M.G. Zhang, X. Gu, L. Huang, Two-dimensional Co2S2 monolayer with robust ferromagnetism. Sci. Rep. 7, 7 (2017). https://doi.org/10.1038/s41598-017-00035-9
  86. M. Ormaza, L. Fernandez, M. Ilyn, A. Magana, B. Xu et al., High temperature ferromagnetism in a GdAg2 monolayer. Nano Lett. 16(7), 4230–4235 (2016). https://doi.org/10.1021/acs.nanolett.6b01197
  87. M. Kan, S. Adhikari, Q. Sun, Ferromagnetism in MnX2 (X = S, Se) monolayers. Phys. Chem. Chem. Phys. 16(10), 4990–4994 (2014). https://doi.org/10.1039/c3cp55146f
  88. Y.P. Liu, W.S. Lew, S. Goolaup, H.F. Liew, S.K. Wong, T.J. Zhou, Observation of oscillatory resistance behavior in coupled Bernal and rhombohedral stacking graphene. ACS Nano 5(7), 5490–5498 (2011). https://doi.org/10.1021/nn200771e
  89. S. Roche, J. Åkerman, B. Beschoten, J.C. Charlier, M. Chshiev et al., Graphene spintronics: the European Flagship perspective. 2D Mater. 2(3), 030202 (2015). https://doi.org/10.1088/2053-1583/2/3/030202
  90. M.W. Si, P.Y. Liao, G. Qiu, Y.Q. Duan, P.D.D. Ye, Ferroelectric field-effect transistors based on MoS2 and CuInP2S6 two-dimensional van der Waals heterostructure. ACS Nano 12(7), 6700–6705 (2018). https://doi.org/10.1021/acsnano.8b01810
  91. Y.P. Liu, K. Tom, X.W. Zhang, S. Lou, Y. Liu, J. Yao, Alloying effect on bright–dark exciton states in ternary monolayer MoxW1−xSe2. New J. Phys. 19, 073018 (2017). https://doi.org/10.1088/1367-2630/aa6d39
  92. Y.P. Liu, Q.L. Xia, J. He, Z.W. Liu, Direct observation of high photoresponsivity in pure graphene photodetectors. Nanoscale Res. Lett. 12, 93 (2017). https://doi.org/10.1186/s11671-017-1827-0
  93. Y.P. Liu, K. Tom, X. Wang, C.M. Huang, H.T. Yuan et al., Dynamic control of optical response in layered metal chalcogenide nanoplates. Nano Lett. 16(1), 488–496 (2016). https://doi.org/10.1021/acs.nanolett.5b04140
  94. X.C. Yu, Z.G. Dong, Y.P. Liu, T. Liu, J. Tao et al., A high performance, visible to mid-infrared photodetector based on graphene nanoribbons passivated with HfO2. Nanoscale 8(1), 327–332 (2016). https://doi.org/10.1039/C5NR06869J
  95. W.G. Luo, Y.F. Cao, P.G. Hu, K.M. Cai, Q. Feng et al., Gate tuning of high-performance InSe-based photodetectors using graphene electrodes. Adv. Opt. Mater. 3(10), 1418–1423 (2015). https://doi.org/10.1002/adom.201500190
  96. Q. Lv, F. Yan, X. Wei, K. Wang, High-performance, self-driven photodetector based on graphene sandwiched GaSe/WS2 heterojunction. Adv. Opt. Mater. 6(2), 1700490 (2018). https://doi.org/10.1002/adom.201700490
  97. M. Massicotte, P. Schmidt, F. Vialla, K.G. Schadler, A. Reserbat-Plantey et al., Picosecond photoresponse in van der Waals heterostructures. Nat. Nanotechnol. 11(1), 42–46 (2016)
  98. X. Wang, L. Huang, Y. Peng, N. Huo, K. Wu et al., Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2 p–n heterojunctions. Nano Res. 9(2), 507–516 (2016). https://doi.org/10.1007/s12274-015-0932-6
  99. X. Wei, F.G. Yan, Q.S. Lv, C. Shen, K.Y. Wang, Fast gate-tunable photodetection in the graphene sandwiched WSe2/GaSe heterojunctions. Nanoscale 9(24), 8388–8392 (2017). https://doi.org/10.1039/C7NR03124F
  100. F.G. Yan, L.X. Zhao, A.L. Patane, P.A. Hu, X. Wei et al., Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures. Nanotechnology 28, 27 (2017). https://doi.org/10.1088/1361-6528/aa749e
  101. K. Zhang, X. Fang, Y.L. Wang, Y. Wan, Q.J. Song et al., Ultrasensitive near-infrared photodetectors based on a graphene–MoTe2–graphene vertical van der Waals heterostructure. ACS Appl. Mater. Interfaces 9(6), 5392–5398 (2017). https://doi.org/10.1021/acsami.6b14483
  102. X. Wei, F.G. Yan, C. Shen, Q.S. Lv, K.Y. Wang, Photodetectors based on junctions of two-dimensional transition metal dichalcogenides. Chin. Phys. B. 26(3), 038504 (2017). https://doi.org/10.1088/1674-1056/26/3/038504
  103. C.H. Lee, G.H. Lee, A.M. van der Zande, W.C. Chen, Y.L. Li et al., Atomically thin p–n junctions with van der Waals heterointerfaces. Nat. Nanotechnol. 9(9), 676–681 (2014). https://doi.org/10.1038/nnano.2014.150
  104. W.H. Wu, Q. Zhang, X. Zhou, L. Li, J.W. Su, F.K. Wang, T.Y. Zhai, Self-powered photovoltaic photodetector established on lateral monolayer MoS2–WS2 heterostructures. Nano Energy 51, 45–53 (2018). https://doi.org/10.1016/j.nanoen.2018.06.049
  105. C. Choi, M.K. Choi, S.Y. Liu, M.S. Kim, O.K. Park et al., Human eye-inspired soft optoelectronic device using high-density MoS2–graphene curved image sensor array. Nat. Commun. 8, 1664 (2017). https://doi.org/10.1038/s41467-017-01824-6
  106. F. Wang, Z.X. Wang, K. Xu, F.M. Wang, Q.S. Wang, Y. Huang, L. Yin, J. He, Tunable GaTe–MoS2 van der Waals p–n junctions with novel optoelectronic performance. Nano Lett. 15(11), 7558–7566 (2015). https://doi.org/10.1021/acs.nanolett.5b03291
  107. M.S. Long, E.F. Liu, P. Wang, A.Y. Gao, H. Xia et al., Broadband photovoltaic detectors based on an atomically thin heterostructure. Nano Lett. 16(4), 2254–2259 (2016). https://doi.org/10.1021/acs.nanolett.5b04538
  108. K. Roy, M. Padmanabhan, S. Goswami, T.P. Sai, G. Ramalingam, S. Raghavan, A. Ghosh, Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices. Nat. Nanotechnol. 8(11), 826–830 (2013). https://doi.org/10.1038/Nnano.2013.206
  109. S.J. Zheng, E.X. Wu, Z.H. Feng, R. Zhang, Y. Xie et al., Acoustically enhanced photodetection by a black phosphorus-MoS2 van der Waals heterojunction p–n diode. Nanoscale 10(21), 10148–10153 (2018). https://doi.org/10.1039/c8nr02022a
  110. Q.M. Wang, Z.Y. Yang, Graphene photodetector with polydiacetylenes acting as both transfer-supporting and light-absorbing layers: flexible, broadband, ultrahigh photoresponsivity and detectivity. Carbon 138, 90–97 (2018). https://doi.org/10.1016/j.carbon.2018.05.054
  111. Y.J. Liu, C. Liu, X.M. Wang, L. He, X.G. Wan et al., Photoresponsivity of an all-semimetal heterostructure based on graphene and WTe2. Sci. Rep. 8, 12840 (2018). https://doi.org/10.1038/s41598-018-29717-8
  112. D. Xiang, T. Liu, J.L. Xu, J.Y. Tan, Z.H. Hu et al., Two-dimensional multibit optoelectronic memory with broadband spectrum distinction. Nat. Commun. 9, 2966 (2018). https://doi.org/10.1038/s41467-018-05397-w
  113. D. Unuchek, A. Ciarrocchi, A. Avsar, K. Watanabe, T. Taniguchi, A. Kis, Room-temperature electrical control of exciton flux in a van der Waals heterostructure. Nature 560(7718), 340–344 (2018). https://doi.org/10.1038/s41586-018-0357-y
  114. B. Dlubak, M.-B. Martin, R.S. Weatherup, H. Yang, C. Deranlot et al., Graphene-passivated nickel as an oxidation-resistant electrode for spintronics. ACS Nano 6(12), 10930–10934 (2012). https://doi.org/10.1021/nn304424x
  115. M.Z. Iqbal, M.W. Iqbal, S. Siddique, M.F. Khan, S.M. Ramay, Room temperature spin valve effect in NiFe/WS2/Co junctions. Sci. Rep. 6, 21038 (2016). https://doi.org/10.1038/srep21038
  116. Z. Wang, D. Sapkota, T. Taniguchi, K. Watanabe, D. Mandrus, A.F. Morpurgo, Tunneling spin valves based on Fe3GeTe2/hBN/Fe3GeTe2 van der Waals heterostructures. Nano Lett. 18(7), 4303–4308 (2018). https://doi.org/10.1021/acs.nanolett.8b01278
  117. H. Zhang, M. Ye, Y. Wang, R. Quhe, Y. Pan et al., Magnetoresistance in Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions. Phys. Chem. Chem. Phys. 18(24), 16367–16376 (2016). https://doi.org/10.1039/C6CP01866A
  118. V.M. Karpan, G. Giovannetti, P.A. Khomyakov, M. Talanana, A.A. Starikov et al., Graphite and graphene as perfect spin filters. Phys. Rev. Lett. 99(17), 176602 (2007). https://doi.org/10.1103/PhysRevLett.99.176602
  119. M.Z. Iqbal, S. Siddique, G. Hussain, M.W. Iqbal, Room temperature spin valve effect in the NiFe/Gr–hBN/Co magnetic tunnel junction. J. Mater. Chem. C 4(37), 8711–8715 (2016). https://doi.org/10.1039/C6TC03425J
  120. D. Xiao, G.B. Liu, W.X. Feng, X.D. Xu, W. Yao, Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides. Phys. Rev. Lett. 108(19), 196802 (2012). https://doi.org/10.1103/PhysRevLett.108.196802
  121. J. Lee, K.F. Mak, J. Shan, Electrical control of the valley Hall effect in bilayer MoS2 transistors. Nat. Nanotechnol. 11(5), 421–425 (2016). https://doi.org/10.1038/nnano.2015.337
  122. K.F. Mak, K.L. McGill, J. Park, P.L. McEuen, The valley Hall effect in MoS2 transistors. Science 344(6191), 1489–1492 (2014). https://doi.org/10.1126/science.1250140
  123. A.V. Stier, K.M. McCreary, B.T. Jonker, J. Kono, S.A. Crooker, Exciton diamagnetic shifts and valley Zeeman effects in monolayer WS2 and MoS2 to 65 Tesla. Nat. Commun. 7, 10643 (2016). https://doi.org/10.1038/ncomms10643
  124. L. Cai, J.F. He, Q.H. Liu, T. Yao, L. Chen et al., Vacancy-induced ferromagnetism of MoS2 Nanosheets. J. Am. Chem. Soc. 137(7), 2622–2627 (2015). https://doi.org/10.1021/ja5120908
  125. C. Zhao, T. Norden, P.Y. Zhang, P.Q. Zhao, Y.C. Cheng et al., Enhanced valley splitting in monolayer WSe2 due to magnetic exchange field. Nat. Nanotechnol. 12(8), 757–762 (2017). https://doi.org/10.1038/Nnano.2017.68
  126. Y.K. Luo, J.S. Xu, T.C. Zhu, G.Z. Wu, E.J. McCormick et al., Opto-valleytronic spin injection in monolayer MoS2/few-layer graphene hybrid spin valves. Nano Lett. 17(6), 3877–3883 (2017). https://doi.org/10.1021/acs.nanolett.7b01393
  127. Y.P. Liu, H. Idzuchi, Y. Fukuma, O. Rousseau, Y. Otani, W.S. Lew, Spin injection properties in trilayer graphene lateral spin valves. Appl. Phys. Lett. 102(3), 033105 (2013). https://doi.org/10.1063/1.4776699
  128. M.V. Kamalakar, C. Groenveld, A. Dankert, S.P. Dash, Long distance spin communication in chemical vapour deposited graphene. Nat. Commun. 6, 6766 (2015). https://doi.org/10.1038/ncomms7766
  129. F.G. Yan, Z.M. Wei, X. Wei, Q.S. Lv, W.K. Zhu, K.Y. Wang, Toward high-performance photodetectors based on 2D materials: strategy on methods. Small Methods 2(5), 1700394 (2018). https://doi.org/10.1002/smtd.201700349
Read More
Author biographies are not available.
Download this PDF file
PDF
Statistic
Read Counter : 5289 Download : 4009

Most read articles by the same author(s)