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Vol. 5 No. 3 (2013)

A Cu/ZnO Nanowire/Cu Resistive Switching Device

https://doi.org/10.1007/BF03353745
Lijie Li
Multidisciplinary Nanotechnology Centre, College of Engineering, Swansea University, UK
Yan Zhang
Institute of Theoretical Physics, Lanzhou University, Lanzhou 730000, China
Zhengjun Chew
Multidisciplinary Nanotechnology Centre, College of Engineering, Swansea University, UK

Corresponding Author: Lijie Li

L.Li@swansea.ac.uk

Nano-Micro Letters, Vol. 5 No. 3 (2013), Article Number: 159-162

Abstract

A new device has been realized using flip-chip joining two printed circuit boards (PCBs) on which zinc oxide (ZnO) nanowires were synthesized. Energy dispersive X-ray measurement has been conducted for the ZnO nanowires, confirming that Cu elements have been diffused into the nanowires during the chemical growth process. From I–V measurements, this Cu/ZnO nanowire/Cu structure exhibits a resistive tuning behaviour, which varies greatly with the frequency of the applied sinusoidal source.

Keywords

Cu/ZnO Nanowires Flip-chip Resistive switching Device
Li, Lijie, Yan Zhang, and Zhengjun Chew. 2013. “A Cu/ZnO Nanowire/Cu Resistive Switching Device”. Nano-Micro Letters 5 (3):159-62. https://doi.org/10.1007/BF03353745.
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